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Determination of critical layer thicknesses in IV‐IV‐alloy systems using reflection high energy electron diffraction intensity oscillations: Ge(100)/GexSn1−x
National licenceAmerican Institute of Physics | 1990| -
Diffusion of dopants in B- and Sb-delta-doped Si films grown by solid-phase epitaxy
Online Contents | 1993| -
Doping of Si thin films by low‐temperature molecular beam epitaxy
National licenceAmerican Institute of Physics | 1993| -
Evolution of terrace size distributions during thin‐film growth by step‐mediated epitaxy
National licenceAmerican Institute of Physics | 1990| -
Effect of hydrogen termination and electron irradiation on the sticking probability of Sb on Si(100) surfaces exposed to Sb4
National licenceAmerican Institute of Physics | 1995| -
Germanium partitioning in silicon during rapid solidification
National licenceAmerican Institute of Physics | 1995| -
Carbon in silicon: Modeling of diffusion and clustering mechanisms
National licenceAmerican Institute of Physics | 2002| -
Extrinsic dislocation loop behavior in silicon with a thermally grown silicon nitride film
National licenceAmerican Institute of Physics | 1997| -
Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides
National licenceAmerican Institute of Physics | 2004| -
Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film
National licenceAmerican Institute of Physics | 1997| -
Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the “+1” model
National licenceAmerican Institute of Physics | 1998| -
Determination of Si self‐interstitial diffusivities from the oxidation‐enhanced diffusion in B doping‐superlattices: The influence of the marker layers
National licenceAmerican Institute of Physics | 1995| -
Diffusion of dopants in B‐ and Sb‐delta‐doped Si films grown by solid‐phase epitaxy
National licenceAmerican Institute of Physics | 1993| -
Urban Climate and City Planning - Some Examples in Freiburg i. Brsg.
British Library Conference Proceedings | 1995| -
Effect of hydrogen termination and electron irradiation on the sticking probability of Sb on Si(100) surfaces exposed to Sb4
Online Contents | 1995|Contributors: Gossmann, H.-J. -
Critical layer thickness and strain relaxation measurements in GaSb(001)/AlSb structures
National licenceAmerican Institute of Physics | 1989| -
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
National licenceAmerican Institute of Physics | 1997|
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