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The electroweak fit of the standard model after the discovery of a new boson at the LHC
Online Contents | 2012| -
Alternating layers of vacancy-type and interstitial-type defects in Ge ion implanted silicon (3 pages)
British Library Online Contents | 2006| -
Trans-R~P Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon
British Library Conference Proceedings | 2010| -
Scanning spreading resistance microscopy of defect engineered low dose SIMOX samples
British Library Conference Proceedings | 2007| -
Rapid thermal annealing of high dose arsenic-implanted silicon
National licenceSpringer Verlag | 1990| -
Evidence for diffusion-limited kinetics of ion-beam-induced epitaxial crystallization in silicon
National licenceAmerican Physical Society | 1995| -
Dose rate dependence of the ion-beam-induced epitaxial crystallization in silicon
National licenceElsevier | 1993| -
Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements
National licenceElsevier | 1991| -
Prevention of impurity gettering in the RP/2 region of ion-implanted silicon by defect engineering
British Library Online Contents | 2002|
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