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1.9 THz selective injection design quantum cascade laser operating at extreme higher temperature above the kBT line
British Library Conference Proceedings | 2013| -
1.9 THz selective injection design quantum cascade laser operating at extreme higher temperature above the kBT line
British Library Online Contents | 2013| -
2. Low-Dimensional Group-III Nitrides - 2.1 Optical properties of InGaN and AlGaN quantum wells - Comparison of Optical Properties between GaN and InGaN Quantum Wells
Online Contents | 1999|Contributors: Hirayama, H. -
3D Photonic Crystals Fabricated by Micromanipulation Technique
British Library Conference Proceedings | 2002| -
222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
British Library Online Contents | 2009| -
222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template (Invited Paper) [7216-58]
British Library Conference Proceedings | 2009| -
222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
British Library Online Contents | 2010| -
222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers
British Library Online Contents | 2009| -
226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire
British Library Online Contents | 2008| -
227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
British Library Online Contents | 2008| -
230 to 250 nm Intense Emission from AlN/AlGaN Quantum Wells
British Library Online Contents | 2000|
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