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  1. Moderne japanische Literatur in deutscher Ubersetzung: Eine Bibliographie der Jahre 1868-2008. Edited by Jurgen Stalph, Christoph Petermann, and Matthias Wittig.; Japanische Literatur im Spiegel deutscher Rezensionen. Edited by Junko Ando, Irmela Hijiya-Kirschnereit, and Matthias Hoop

    Gossmann, H. | British Library Online Contents | 2009

  2. Von Mitleid und Empathie

    Goßmann, H. H. | Thieme Verlag | 2012

  3. Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing

    Gossmann, H.-J.L. | British Library Online Contents | 2008

  4. Ion implantation in advanced planar and vertical devices

    Gossmann, H. J. | British Library Online Contents | 2005

  5. Ion implantation in advanced planar and vertical devices

    Gossmann, H. J. | British Library Conference Proceedings | 2005

  6. SEMICONDUCTOR TECHNOLOGY - Device characteristics of Si PMOSFETs with decaborane (B10-H14) or elemental B extension implants

    Gossmann, H.-J.L. | Online Contents | 2004

  7. Determination of critical layer thicknesses in IV‐IV‐alloy systems using reflection high energy electron diffraction intensity oscillations: Ge(100)/GexSn1−x

    National licence
    Gossmann, H.‐J. | American Institute of Physics | 1990

  8. Initial stages of interface formation in group IV-IV systems: Sn ON Ge(100) and Ge(111)

    National licence
    Gossmann, H.-J. | Elsevier | 1986

  9. The influence of topographic structures on night-time surface temperatures: Evaluation of a satellite thermal image of the upper Rhine plain and the surrounding highlands

    Gossmann, H. | NTRS | 1980

  10. Centralized mortar plant at Leipzig, East Germany

    Gossmann, H. | Engineering Index Backfile | 1967

  11. Das geheime Zusammenspiel zwischen Arzt und Patient im Spiegel der Balint-Gruppe

    Goßmann, H. H. | Thieme Verlag | 2001

  12. Ultra-shallow junctions for novel device architectures beyond the 65 nm node

    Agarwal, A. / Gossmann, H. | IEEE | 2004

  13. Planung und Einrichtung von Produktionsstätten im Bauwesen : mit 104 Tabellen und 1 Anlage

    Goßmann, H. | TIBKAT | 1974

  14. Ultra-shallow junctions for novel device architectures beyond 65 nm node

    Agarwal, A. / Gossmann, H. | IEEE | 2004

  15. GR-Workshop Online-Lernmodule zur Physischen Geographie Das Projekt WEBGEO

    Gossmann, H. / Fuest, R. | British Library Online Contents | 2003

  16. Invited: Dopants and Intrinsic Point-Defects During Si Device Processing

    Gossmann, H.-J. | British Library Conference Proceedings | 1998

  17. Elektrokardiographie vom Blickpunkt der Allgemeinpraxis und Klinik1

    Goßmann, H. H. | Thieme Verlag | 1964

  18. The interstitial fraction of diffusivity of common dopants in Si

    Gossmann, H.-J. | Online Contents | 1997

  19. Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)

    National licence
    Gossmann, H.-J. / Gibson, W.M. | Elsevier | 1983

  20. Behavior of intrinsic Si point defects during annealing in vacuum

    Gossmann, H.-J. | Online Contents | 1995

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