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  1. 1.24(micro)m InGaAs-GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

    Kaiander, I.N. | Online Contents | 2004

  2. Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths

    Kaiander, I.N. | Online Contents | 2004

  3. Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths

    Kaiander, I.N. / Hopfer, F. / Kettler, T. et al. | Elsevier | 2004

  4. Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths

    Kaiander, I.N. / Hopfer, F. / Kettler, T. et al. | Tema Archive | 2004

  5. Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors

    Maximov, M.V. / Ramushina, E.M. / Skopina, V.I. et al. | Tema Archive | 2002

  6. Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers

    Ouyang, D. / Ledentsov, N.N. / Bognar, S. et al. | Tema Archive | 2004

  7. Lithographic tuning of photonic-crystal unit-cell resonators with InGaAs/GaAs quantum dots emitting at 1.2 mu m

    Choi, Y.S. / Kim, S.K. / Kim, S.H. et al. | Tema Archive | 2005

  8. Colliding-pulse modelocked quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IET Digital Library Archive | 2005

  9. Colliding-pulse modelocked quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IET | 2005

  10. 20 GHz colliding pulse mode-locking of InGaAs quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Zhao, X. et al. | IEEE | 2005

  11. Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

    Maximov, M.V. / Asryan, L.V. / Shernyakov, Y.M. et al. | Tema Archive | 2001

  12. Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

    Maximov, M.V. / Asryan, L.V. / Shernyakov, Yu.M. et al. | IEEE | 2001

  13. Unique properties of quantum dot lasers

    Ledentsov, N.N. / Kovsh, A.R. / Ouyang, D. et al. | IEEE | 2003

  14. 10 GHz hybrid modelocking of monolithic InGaAs quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Tan, K.T. et al. | IET | 2003

  15. 10 GHz hybrid modelocking of monolithic InGaAs quantum dot lasers

    Thompson, M.G. / Marinelli, C. / Tan, K.T. et al. | IET Digital Library Archive | 2003

  16. Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at approximately 1.3 mu m

    Maximov, M.V. / Tsatsulnikov, A.F. / Volovik, B.V. et al. | Tema Archive | 2000

  17. Single transverse mode operation of long wavelength (~1.3 µm) InAs GaAs quantum dot laser

    Maximov, M.V. / Shernyakov, Yu.M. / Kaiander, I.N. et al. | IET | 1999

  18. Single transverse mode operation of long wavelength (~1.3 µm) InAs GaAs quantum dot laser

    Maximov, M.V. / Shernyakov, Yu.M. / Kaiander, I.N. et al. | IET Digital Library Archive | 1999

  19. Investigation of high repetition rate mode-locked quantum dot lasers

    Tan, K.T. / Thompson, M.G. / Marinelli, C. et al. | IEEE | 2003

  20. LETTER TO THE EDITOR: Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers

    Ouyang, D. | Online Contents | 2004
    Contributors: Kaiander, I.N.
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