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Year of publication
Type of media
Source
Subject
Type of material
Language
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Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures
Online Contents | 2008| -
Deep level centers in InGaN-GaN heterostructure grown on sapphire and free-standing GaN
Online Contents | 2007| -
The influence of V defects on luminescence properties of AlInGaN quaternary alloys
Online Contents | 2005| -
Invariance of the aperiodic property for polynomials with perturbed coefficients
Tema Archive | 1990|