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Dispositivo láser semiconductor con puntos cuánticos para emisión en el cercano infrarrojo
British Library Online Contents | 2019| -
Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs
British Library Online Contents | 2008| -
Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs (001)
British Library Online Contents | 2008| -
Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition
Free accessAmerican Institute of Physics | 2018| -
A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring
PaperIOP Institute of Physics | 2015| -
Giant reflectance anisotropy of polar cubic semiconductors in the far infrared
British Library Conference Proceedings | 2003| -
On the origin of reflectance-anisotropy oscillations during GaAs (001) homoepitaxy
British Library Online Contents | 2018| -
On the origin of reflectance-anisotropy oscillations during GaAs (001) homoepitaxy
British Library Online Contents | 2018| -
Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV (5 pages)
British Library Online Contents | 2012| -
Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs
British Library Online Contents | 2008| -
Reflectance-difference spectroscopy as a probe for semiconductor epitaxial growth monitoring
British Library Online Contents | 2015|
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