Rapid access to an updated biological macromolecule crystallization database through artificial intelligence (English)
- New search for: Roussel, A.
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- New search for: Fontecilla-Camps, J.C.
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In:
Journal of Crystal Growth
;
106
, 2-3
;
405-409
;
1990
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ISSN:
- Article (Journal) / Print
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Title:Rapid access to an updated biological macromolecule crystallization database through artificial intelligence
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Additional title:Schneller Zugriff auf eine aktualisierte biologische Makromolekülkristallisation-Datenbank durch künstliche Intelligenz
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Contributors:Roussel, A. ( author ) / Serre, L. ( author ) / Frey, M. ( author ) / Fontecilla-Camps, J.C. ( author )
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Published in:Journal of Crystal Growth ; 106, 2-3 ; 405-409
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Publisher:
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Publication date:1990
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Size:5 Seiten, 12 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:NATUERLICHE SPRACHE , BENUTZEROBERFLAECHE , BIOPHYSIK , ZUGRIFF , ZUGRIFFSZEIT , DATENBANK , RECHNERPROGRAMM , KRISTALLISATION , PUBLIKATION , DIALOGBETRIEB , MOLEKULARPHYSIK , MOLEKULARSTRUKTUR , ANWENDER , SCHNITTSTELLE , KUENSTLICHE INTELLIGENZ , DATENBANKVERWALTUNGSSYSTEM , MAKROMOLEKUEL , ABFRAGESPRACHE , PASCAL (PROGRAMMIERSPRACHE) , INFORMATIONSWIEDERGEWINNUNG , RECHNERUNTERSTUETZTE PHYSIK , MOLECULAR BIOPHYSICS
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Source:
Table of contents – Volume 106, Issue 2-3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 149
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Elastic constant matrix required for thermal stress analysis of bulk single crystals during Czochralski growthMiyazaki, N. / Hagihara, S. / Munakata, T. et al. | 1990
- 157
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Misfit dislocations in GaAs heteroepitaxy on (001) SiGerthsen, D. / Biegelsen, D.K. / Ponce, F.A. / Tramontana, J.C. et al. | 1990
- 166
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Growth of CdS/ZnS superlattices at low temperature by atomic layer epitaxyOhta, Shin-ichi / Kobayashi, Satoshi / Kaneko, Futao / Kashiro, Ko-ichi et al. | 1990
- 175
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Study of decoration microdefects in lec-grown Si-doped GaAs crystals by selective photoetching and laser scattering tomographyWeyher, J.L. / Gall, P. / Frigerio, G. / Zanotti, L. et al. | 1990
- 181
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Kink densities along a crystal surface step at low temperatures and under nonequilibrium conditionsZhang, Jingwu / Nancollas, G.H. et al. | 1990
- 191
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Undercooling of acoustically levitated molten dropsOhsaka, K. / Trinh, E.H. / Glicksman, M.E. et al. | 1990
- 197
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Epitaxial growth of GaInP on (111)A and (111)B surfaces by metalorganic chemical vapor depositionMorita, Etsuo / Ikeda, Masao / Inoue, Makoto / Kaneko, Kunio et al. | 1990
- 208
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Organometallic vapor phase epitaxial growth of a new quarternary semiconductor alloy Ga1−xInxP1−ySbyJou, M.J. / Jaw, D.H. / Fang, Z.M. / Stringfellow, G.B. et al. | 1990
- 208
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Organometallic vapor phase epitaxial growth of a new quaternary semiconductor alloy Ga1-xInxP1-ySbyJou, M.J. / Jaw, D.H. / Fang, Z.M. / Stringfellow, G.B. et al. | 1990
- 217
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Measurements of concentration profile by diffraction techniquesBedarida, F. / Piano, E. / Pontiggia, C. et al. | 1990
- 221
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Measurements of optical properties of some molten oxidesNason, D.O. / Yen, C.T. / Tiller, W.A. et al. | 1990
- 227
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Calculation of unimolecular rate constants for common metalorganic vapor phase epitaxy precursors via RRKM theoryBuchan, N.I. / Jasinski, J.M. et al. | 1990
- 239
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Infrared studies of exchange and pyrolysis reactions in mixtures of trimethylamine alane and trimethylgalliumGrady, A.S. / Markwell, R.D. / Russell, D.K. / Jones, A.C. et al. | 1990
- 246
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Growth of Al x Ga 1−x As by reduced pressure MOVPE using trimethylamine alaneJones, A.C. / Rushworth, S.A. / Bohling, D.A. / Muhr, G.T. et al. | 1990
- 253
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Growth of low carbon content Al x Ga 1−x As by reduced pressure MOVPE using trimethylamine alaneJones, A.C. / Rushworth, S.A. et al. | 1990
- 258
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GaAs homogeneity region and point defect concentration calculation in ternary systems Ga-As-electrically active impurityMorozov, A.N. et al. | 1990
- 273
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Crystal growth in mirror heaters: Time markers by lamp pulsesDanilewsky, A.N. / Benz, K.W. et al. | 1990
- 279
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Diamond deposition by chemical vapor transport with hydrogen in a closed systemPiekarczyk, W. / Messier, R. / Roy, R. / Engdahl, C. et al. | 1990
- 294
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Influence of convection on rod spacing of eutecticsCaram, R. / Chandrasekhar, S. / Wilcox, W.R. et al. | 1990
- 303
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Numerical simulation of the growth of HgCdTe layers by liquid phase epitaxy from Te-rich solutions: The effect of liquid dimensions and mercury lossSanz-Maudes, J. / Sangrador, J. / Rodriguez, T. / Pernichi, A. / Gonzalez, C. et al. | 1990
- 318
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Subcell-matched epitaxy of normal long chain compounds on polyethyleneOkihara, Takumi / Kawaguchi, Akiyoshi / Ohara, Masayoshi / Katayama, Ken-ichi et al. | 1990
- 349
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Apparent solubilities of two amorphous calcium phosphates and of octacalcium phosphate in the temperature range 30–42°CChristoffersen, M.R. / Christoffersen, J. / Kibalczyc, W. et al. | 1990
- 355
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The effect of magnesium ions on the precipitation of calcium phosphatesKibalczyc, W. / Christoffersen, J. / Christoffersen, M.R. / Zielenkiewicz, A. / Zielenkiewicz, W. et al. | 1990
- 367
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The growth and characterization of GaAs single crystal by a modified horizontal bridgman systemChen, T.P. / Huang, T.S. / Chen, L.J. / Guo, Y.D. et al. | 1990
- 377
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Modeling and optimization of the growth of polycrystalline silicon films by thermal decomposition of silanePeev, G. / Zambov, L. / Yanakiev, Y. et al. | 1990
- 387
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On the origin of banded microstructure in rapidly solidified alloys: The case of Al-10%Mn quasicrystalline systemChattopadhyay, K. / Mukhopadhyay, N.K. et al. | 1990
- 393
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The distribution coefficients of Mg2+ ion between CaCO3 polymorphs and solution and the effects on the formation and transformation of CaCO3 in waterSawada, Kiyoshi / Ogino, Takeshi / Suzuki, Toshio et al. | 1990
- 400
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Growth morphology of titanium nitride whiskersGuo, W. / Ning, X.G. / Zhu, J. / Ye, H.Q. et al. | 1990
- 405
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Rapid access to an updated biological macromolecule crystallization database through artificial intelligenceRoussel, Alain / Serre, Laurence / Frey, Michel / Fontecilla-Camps, Juan-C. et al. | 1990
- 410
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Cellular and dendritic regimes in directional solidification: Microstructural stability diagramBillia, B. / Jamgotchian, H. / Trivedi, R. et al. | 1990
- 421
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Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layersHayafuji, Norio / Miyashita, Motoharu / Kumabe, Hisao / Murotani, Toshio et al. | 1990
- 426
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Vertical gradient freeze growth of ternary GaSb-InSb crystalsGarandet, J.P. / Duffar, T. / Favier, J.J. et al. | 1990
- 437
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On the scaling analysis of the solute boundary layer in idealized growth configurationsGarandet, J.P. / Duffar, T. / Favier, J.J. et al. | 1990
- 445
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Surface tension driven heat, mass, and momentum transport in a two-dimensional float-zoneYoung, G.W. / Chait, A. et al. | 1990
- 467
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High resistivity InP layer grown by low temperature liquid phase epitaxyOhtsuka, K. / Ohishi, T. / Abe, Y. / Sugimoto, H. / Matsui, T. et al. | 1990
- 471
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Morphology of synthetic diamonds grown from Na2CO3 solvent-catalystKanda, Hisao / Akaishi, Minoru / Yamaoka, Shinobu et al. | 1990
- 476
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DSL photoetching and near infrared phase contrast microscopy on grown-in defects in Si doped LEC GaAsWeyher, J.L. / Montgomery, P.C. et al. | 1990
- 481
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Etch pit study of different crystallographic faces of L-arginine phosphate (LAP)Rao, S.M. / Batra, A.K. / Cao, C. / Lal, R.B. et al. | 1990
- 483
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Double crucible method for the growth of large superconducting YBCO single crystalsWang, Yaoshui / Bennema, P. / van der Linden, P. et al. | 1990
- 487
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A new procedure for the isolation of large YBCO superconducting single crystalsWang, Yaoshui / Schreurs, L.W.M. / van der Linden, P. / Li, Yuan / Bennema, P. et al. | 1990
- 490
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7th international conference on vapour growth and epitaxy Nagoya, Japan, 14–17 July 1991| 1990