E-Books durchsuchen

Defects in High-k Gate Dielectric Stacks [2006]

1
PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT
17
EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS
29
TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS
41
ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS
61
INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS
73
CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT
85
CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN HIGH-K GATE DIELECTRICS USING CHARGE PUMPING
97
IMPACT OF HIGH-κ PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS
109
STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-κ GATE DIELECTRICS
123
DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS
135
INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS
147
XPS/LEIS STUDY OF HIGH-K RARE EARTH (LU, YB) OXIDES AND SILICATES ON SI: THE EFFECT OF ANNEALING ON MICROSTRUCTURE EVOLUTION
161
TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS
175
DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES
189
DEFECT-RELATED ISSUES IN HIGH-K DIELECTRICS
203
STUDYING THE EFFECTS OF NITROGEN AND HAFNIUM INCORPORATION INTO THE SIO<Subscript>2</Subscript>/SI(100) INTERFACE WITH REPLICA-EXCHANGE MOLECULAR DYNAMICS AND DENSITYFUNCTIONAL- THEORY CALCULATIONS
215
PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION
227
MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-κ GATE STACKS
237
ELECTRICALLY ACTIVE INTERFACE AND BULK SEMICONDUCTOR DEFECTS IN HIGH-K / GERMANIUM STRUCTURES
249
DEFECT AND COMPOSITION ANALYSIS OF AS-DEPOSITED AND NITRIDED (100)SI / SIO<Subscript>2</Subscript>/ HF<Subscript>1-X</Subscript>SI<Subscript>X</Subscript>O<Subscript>2</Subscript> STACKS BY ELECTRON PARAMAGNETIC RESONANCE AND ION BEAM ANALYSIS
263
DEFECTS AT THE HIGH-κ /SEMICONDUCTOR INTERFACES INVESTIGATED BY SPIN DEPENDENT SPECTROSCOPIES
277
FIXED OXIDE CHARGE IN Ru-BASED CHEMICAL VAPOUR DEPOSITED HIGH-κ GATE STACKS
287
ELECTRICAL DEFECTS IN ATOMIC LAYER DEPOSITED HFO<Subscript>2</Subscript> FILMS ON SILICON: INFLUENCE OF PRECURSOR CHEMISTRIES AND SUBSTRATE TREATMENT
299
THE EFFECTS OF RADIATION AND CHARGE TRAPPING ON THE RELIABILITY OF ALTERNATIVE GATE DIELECTRICS
323
CAN LEIS SPECTRA CONTAIN INFORMATION ON SURFACE ELECTRONIC STRUCTURE OF HIGH-K DIELECTRICS?
331
LOW SUBSTRATE DAMAGE HIGH-K REMOVAL AFTER GATE PATTERNING
339
MONITORING OF FERMI LEVEL VARIATIONS AT METAL/HIGH-K INTERFACES WITH <Emphasis Type="Italic">IN SITU</Emphasis> X-RAY PHOTOELECTRON SPECTROSCOPY
349
STRUCTURE, COMPOSITION AND ORDER AT INTERFACES OF CRYSTALLINE OXIDES AND OTHER HIGH-K MATERIALS ON SILICON
361
INTERFACE FORMATION DURING EPITAXIAL GROWTH OF BINARY METAL OXIDES ON SILICON
373
EFFECT OF CHEMICAL ENVIRONMENT AND STRAIN ON OXYGEN VACANCY FORMATION ENERGIES AT SILICONSILICON OXIDE INTERFACES
385
DIELECTRIC AND INFRARED PROPERTIES OF ULTRATHIN SiO<Subscript>2</Subscript> LAYERS ON Si(100)
397
THE (1 0 0) SURFACE OF SEMICONDUCTOR SILICON (IN PASSIVATION PRACTICAL CONDITIONS): PREPARATION, EVOLUTION,
411
CORRELATION BETWEEN DEFECTS, LEAKAGE CURRENTS AND CONDUCTION MECHANISMS IN THIN HIGH-K DIELECTRIC LAYERS
423
ELECTRONIC STRUCTURE OF ZRO<Subscript>2</Subscript> AND HFO<Subscript>2</Subscript>
435
HIGH-K GATE STACKS ELECTRICAL CHARACTERIZATION AT THE NANOSCALE USING CONDUCTIVE-AFM
447
MAGNETIC DEFECTS IN PRISTINE AND HYDROGENTERMINATED NANODIAMONDS
457
ON THE IMPORTANCE OF ATOMIC PACKING IN DETERMINING DIELECTRIC PERMITTIVITIES
471
INVESTIGATION OF THE ELECTRONIC PROPERTIES OF THIN DIELECTRIC FILMS BY SCANNING PROBE MICROSCOPY
Feedback