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Mid-infrared Semiconductor Optoelectronics [2006]
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Interface Lasers with Asymmetric Band Offset Confinement
- 7
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IV–VI Semiconductors for Mid-infrared Optoelectronic Devices
- 3
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Theory of Mid-wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies
- 93
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Band Structure and High-pressure Measurements
- 131
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III-Sb-based Type-I QW Diode Lasers
- 159
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VCSELs Emitting in the 2–3 µm Wavelength Range
- 189
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Antimonide Type-II “W” Lasers
- 265
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Mid-infrared Vertical Cavity Surface Emitting Lasers based on the Lead Salt Compounds
- 303
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Optically Pumped MIR Lasers
- 323
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Mid-infrared Quantum Cascade Lasers
- 359
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Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys
- 395
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LED-Photodiode Opto-pairs
- 429
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QWIP Detectors for the MWIR
- 453
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Negative Luminescence
- 487
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Mid-infrared Quantum Dot Photodetectors
- 515
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Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors
- 547
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High-speed Avalanche Photodiodes for the 2–5 µm Spectral Range
- 595
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Infrared Methods for Gas Detection
- 615
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Mid-infrared Biomedical Applications
- 635
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Development of Infrared Countermeasure Technology and Systems
- 673
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Survey of Thermophotovoltaic (TPV) Devices