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Mid-infrared Semiconductor Optoelectronics [2006]

6
Interface Lasers with Asymmetric Band Offset Confinement
7
IV–VI Semiconductors for Mid-infrared Optoelectronic Devices
3
Theory of Mid-wavelength Infrared Laser Active Regions: Intrinsic Properties and Design Strategies
93
Band Structure and High-pressure Measurements
131
III-Sb-based Type-I QW Diode Lasers
159
VCSELs Emitting in the 2–3 µm Wavelength Range
189
Antimonide Type-II “W” Lasers
265
Mid-infrared Vertical Cavity Surface Emitting Lasers based on the Lead Salt Compounds
303
Optically Pumped MIR Lasers
323
Mid-infrared Quantum Cascade Lasers
359
Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys
395
LED-Photodiode Opto-pairs
429
QWIP Detectors for the MWIR
453
Negative Luminescence
487
Mid-infrared Quantum Dot Photodetectors
515
Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors
547
High-speed Avalanche Photodiodes for the 2–5 µm Spectral Range
595
Infrared Methods for Gas Detection
615
Mid-infrared Biomedical Applications
635
Development of Infrared Countermeasure Technology and Systems
673
Survey of Thermophotovoltaic (TPV) Devices
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