Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
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Review Article - Low-dimensional oxide nanostructures on metals: Hybrid systems with novel propertiesMairiaux, E et al. | 2010
- 1
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Low-dimensional oxide nanostructures on metals: Hybrid systems with novel propertiesNetzer, Falko P. / Allegretti, Francesco / Surnev, Svetlozar et al. | 2010
- 17
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Improvement of Ohmic contacts to using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistorsMairiaux, E. / Desplanque, L. / Wallart, X. et al. | 2010
- 21
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Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etchingKallesøe, Christian / Mølhave, Kristian / Larsen, Kasper F. et al. | 2010
- 27
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Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodesKim, Hong-Yeol / Kim, Jihyun / Ren, F. et al. | 2010
- 30
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Step-width adjustment in fabrication of staircase structuresGlinsner, T et al. | 2010
- 30
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Step-width adjustment in fabrication of staircase structuresa)Li, P. / Lee, S.-Y. / Jeon, S. C. et al. | 2010
- 36
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Fully automated hot embossing processes utilizing high resolution working stampsIlievski, F et al. | 2010
- 36
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Fully automated hot embossing processes utilizing high resolution working stampsa)Glinsner, T. / Veres, T. / Kreindl, G. et al. | 2010
- 42
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Graphoepitaxy of block copolymers using selectively removable templatesIlievski, F. / Ross, C. A. et al. | 2010
- 45
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Effect of process related and haze defects on immersion lithographyTay, C. J. / Quan, C. / Ling, M. L. et al. | 2010
- 52
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Passivation of high electron mobility transistor using ozone treatmentLo, C. F. / Chang, C. Y. / Pearton, S. J. et al. | 2010
- 56
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Advanced in situ pre-Ni silicide (Siconi) cleaning at to resolve defects in modulesYang, Ruipeng / Su, Na / Bonfanti, Paolo et al. | 2010
- 62
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Metastable structure and magnetism of Cr-doped AlN in AlN/TiN multilayersZeng, F. / Fan, B. / Yang, Y. C. et al. | 2010
- 66
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Optimization of layer structure supporting long range surface plasmons for surface plasmon-enhanced fluorescence spectroscopy biosensorsHuang, Chun Jen / Dostalek, Jakub / Knoll, Wolfgang et al. | 2010
- 73
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Analysis and metrology with a focused helium ion beamHan, Huilan et al. | 2010
- 73
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Analysis and metrology with a focused helium ion beama)Sijbrandij, Sybren / Notte, John / Scipioni, Larry et al. | 2010
- 78
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Direct thermal-UV nanoimprint of an iron-containing organometallic hybrid filmHan, Huilan / Bhushan, Abhinav / Yaghmaie, Frank et al. | 2010
- 82
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Sub- gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressureHamouda, F. / Barbillon, G. / Gaucher, F. et al. | 2010
- 86
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Making high-fidelity imprint template by resist patterns over a flexible conductive polymer substrateYe, Xiangdong / Ding, Yucheng / Duan, Yugang et al. | 2010
- 90
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Spin-coatable resist for optical and electron beam lithographiesSaifullah, M. S. M. / Khan, M. Z. R. / Hasko, David G. et al. | 2010
- 96
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active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor targetNanba, M. / Takiguchi, Y. / Honda, Y. et al. | 2010
- 104
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Roller-reversal imprint process for preparation of large-area microstructuresLiu, Hongzhong / Jiang, Weitao / Ding, Yucheng et al. | 2010
- 110
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Microstructures and magnetic properties of amorphous films deposited by facing target magnetron-sputtering system with divergent magnetic fieldKim, Taewan / Lee, Hyun-Yong / Lee, Kyungil et al. | 2010
- 116
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Improvement in bias stability of amorphous- thin film transistors with passivation layersLim, Wantae / Douglas, E. A. / Norton, D. P. et al. | 2010
- 120
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Infinite etch selectivity and line edge roughness variation during etching of silicon oxynitride with an extreme ultraviolet resist pattern in dual-frequency capacitively coupled plasmasKwon, B. S. / Kim, J. S. / Lee, N.-E. et al. | 2010
- 128
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Four beams surface plasmon interference nanoscale lithography for patterning of two-dimensional periodic featuresSreekanth, K. V. / Murukeshan, V. M. et al. | 2010
- 131
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Ultrahigh selective etching of films over films for silicon nitride gate spacer etchingLee, Sunghoon / Oh, Jinho / Lee, Kyumin et al. | 2010
- 138
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Room-temperature capillary-imprint lithography for making micro-/nanostructures in large areasYe, Xiangdong / Ding, Yucheng / Duan, Yugang et al. | 2010
- 143
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Parameter study for silicon grass formation in Bosch processJung, KyuBong / Song, WooJin / Lim, Hyun Woo et al. | 2010
- 149
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Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategyDarnon, M. / Chevolleau, T. / David, T. et al. | 2010
- 157
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micropillar fabrication for small mode volume photon sourcesChoi, John M. / Silverman, Kevin L. / Stevens, Martin J. et al. | 2010
- 163
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Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transferWei, Xing / Wu, Aimin / Wang, Xiang et al. | 2010
- 169
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Stenciled conducting bismuth nanowiresVanstreels, Kris et al. | 2010
- 169
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Stenciled conducting bismuth nanowiresa)Savu, Veronica / Neuser, Sam / Villanueva, Guillermo et al. | 2010
- 173
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Nanoindentation study of thin plasma enhanced chemical vapor deposition SiCOH low- films modified in downstream plasmaVanstreels, Kris / Urbanowicz, Adam M. et al. | 2010
- 180
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Surface topography and physicochemistry of silver containing titanium nitride nanocomposite coatingsWhitehead, Kathryn / Kelly, Peter / Li, Heqing et al. | 2010
- 188
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Effects of silver deposition on 405 nm light-driven zinc oxide photocatalystConstancias, C et al. | 2010
- 188
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Effects of silver deposition on light-driven zinc oxide photocatalysta)Seki, Shigeyuki / Sekizawa, Takumi / Haga, Koichi et al. | 2010
- 194
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Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratingsMesler, Brooke L et al. | 2010
- 194
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Fabrication of large area ultrathin silicon membrane: Application for high efficiency extreme ultraviolet diffraction gratingsa)Constancias, C. / Dalzotto, B. / Michallon, P. et al. | 2010
- 198
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Magnetic soft x-ray imaging of vortex core dynamicsTseng, Ampere A et al. | 2010
- 198
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Magnetic soft x-ray imaging of vortex core dynamicsa)Mesler, Brooke L. / Buchanan, Kristen / Im, Mi-Young et al. | 2010
- 202
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Scratch properties of nickel thin films using atomic force microscopyTseng, Ampere A. / Shirakashi, Jun-ichi / Jou, Shyankay et al. | 2010
- 211
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Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperatureChu, A. K. / Hong, T. I. / Tien, W. C. et al. | 2010
- 216
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Erratum: “Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules” [J. Vac. Sci. Technol. B 27, 2209 (2009)]O'Donnell, Sarah E. / Reinke, Petra et al. | 2010
- 219
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CUMULATIVE AUTHOR INDEX| 2010
- C1A1
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Simulation of junctions: Present and future challenges for technologies beyond 32 nmPelaz, Lourdes / Marqués, Luis A. / Aboy, María et al. | 2010
- C1a1
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PrefaceHunter, Jerry / Gribelyuk, Michael et al. | 2010
- C1B1
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Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentGiubertoni, Damiano / Pepponi, Giancarlo / Sahiner, Mehmet Alper et al. | 2010
- C1C1
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Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curvesBogdanowicz, Janusz / Dortu, Fabian / Clarysse, Trudo et al. | 2010
- C1C8
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Photovoltage versus microprobe sheet resistance measurements on ultrashallow structuresClarysse, Trudo / Moussa, Alain / Parmentier, Brigitte et al. | 2010
- C1C15
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Photoreflectance characterization of ultrashallow junction activation in millisecond annealingChism, Will / Current, Michael / Vartanian, Victor et al. | 2010
- C1C21
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Study of submelt laser induced junction nonuniformities using Therma-ProbeRosseel, Erik / Bogdanowicz, Janusz / Clarysse, Trudo et al. | 2010
- C1C27
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Review of electrical characterization of ultra-shallow junctions with micro four-point probesPetersen, Dirch H. / Hansen, Ole / Hansen, Torben M. et al. | 2010
- C1C34
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Sensitivity study of micro four-point probe measurements on small samplesWang, Fei / Petersen, Dirch H. / Hansen, Torben M. et al. | 2010
- C1C41
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Electrical characterization of InGaAs ultra-shallow junctionsPetersen, Dirch H. / Hansen, Ole / Bøggild, Peter et al. | 2010
- C1C48
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Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implantsMerkulov, A. / Peres, P. / Choi, S. et al. | 2010
- C1C54
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Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopyEhrke, H.-U. / Loibl, N. / Moret, M. P. et al. | 2010
- C1C59
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Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in siliconPepponi, G. / Giubertoni, D. / Bersani, M. et al. | 2010
- C1C65
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High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- layersReading, M. A. / van den Berg, J. A. / Zalm, P. C. et al. | 2010
- C1C71
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Application of the Storing Matter technique to the analysis of semiconductor materialsMansilla, C. / Wirtz, T. et al. | 2010
- C1C77
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Comparative study of native oxide impacts on low energy doping processesQin, Shu / McTeer, Allen / Zhuang, Kent et al. | 2010
- C1C84
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Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniquesGiubertoni, Damiano / Iacob, Erica / Hoenicke, P. et al. | 2010
- C1D1
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Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniquesQin, Shu / Morinville, Wendy / Zhuang, Kent et al. | 2010
- C1D5
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Electron holography for analysis of deep submicron devices: Present status and challengesIkarashi, Nobuyuki / Toda, Akio / Uejima, Kazuya et al. | 2010
- C1D11
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Quantitative dopant profiling of junction in light-emitting diode using off-axis electron holographyChung, Suk / Johnson, Shane R. / Ding, Ding et al. | 2010
- C1E1
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Dopant measurements in semiconductors with atom probe tomographyRonsheim, P. A. / Hatzistergos, M. / Jin, S. et al. | 2010
- C1F1
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Effect of - and -type dopants on patterned amorphous regrowthMorarka, S. / Rudawski, N. G. / Law, M. E. et al. | 2010
- C1G1
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Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo modelVollenweider, Kilian / Sahli, Beat / Zographos, Nikolas et al. | 2010
- C1G7
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Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologiesHerrmann, Tom / Flachowsky, Stefan / Illgen, Ralf et al. | 2010
- C1G12
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Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistorsFlachowsky, Stefan / Illgen, Ralf / Herrmann, Tom et al. | 2010
- C1G18
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Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloysChen, Renyu / Dunham, Scott T. et al. | 2010
- C1H1
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Exploring doping options and variability of trigate transistors using atomistic process and device simulationsMartin-Bragado, Ignacio / Moroz, Victor / Choi, Munkang et al. | 2010
- C1H5
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Experimental studies of dose retention and activation in fin field-effect-transistor-based structuresMody, Jay / Duffy, Ray / Eyben, Pierre et al. | 2010
- C1I1
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Interaction of NiSi with dopants for metallic source/drain applicationsLuo, Jun / Qiu, Zhi-Jun / Zhang, Zhen et al. | 2010
- C1I12
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Effect of source/drain-extension dopant species on device performance of embedded SiGe strained -metal oxide semiconductor field effect transistors using millisecond annealingIllgen, Ralf / Flachowsky, Stefan / Herrmann, Tom et al. | 2010
- L1
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Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylateMohammad, M. A. / Fito, T. / Chen, J. et al. | 2010
- L5
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Chloride ion detection by InN gated high electron mobility transistorsChu, Byung-Hwan / Lin, Hon-Way / Gwo, Shangjr et al. | 2010
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Advanced Anneals and Implant Technology - Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentBogdanowicz, Janusz et al. | 2010
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International Workshop on Insight in Semiconductor Device Fabrication, Metrology, and Modeling (INSIGHT 2009) - PrefacePelaz, Lourdes et al. | 2010
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Defects, Dopant Diffusion and Deactivation - Effect of n- and p-type dopants on patterned amorphous regrowthVollenweider, Kilian et al. | 2010
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1-D Metrology - Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curvesChism, Will et al. | 2010
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Silicides and Source/Drain Engineering - Interaction of NiSi with dopants for metallic source/drain applicationsIllgen, Ralf et al. | 2010
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Modeling and Simulation - Fluorine clustering and diffusion in silicon: Ab initio calculations and kinetic Monte Carlo modelFlachowsky, Stefan et al. | 2010
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Information for Contributors| 2010
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3D Metrology with Atom Probe - Dopant measurements in semiconductors with atom probe tomographyMorarka, S et al. | 2010
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2D Metrology - Plasma doping two-dimensional characterization using low energy x-ray emission spectroscopy and full wafer secondary ion mass spectrometry/angle-resolved x-ray electron spectroscopy techniquesChung, Suk et al. | 2010
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Letters - Interdependence of optimum exposure dose regimes and the kinetics of resist dissolution for electron beam nanolithography of polymethylmethacrylateChu, Byung-Hwan et al. | 2010
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Plenary Session - Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nmGiubertoni, Damiano et al. | 2010
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Metrology Simulation and Integration of Non-Planar Devices - Exploring doping options and variability of trigate transistors using atomistic process and device simulationsMody, Jay et al. | 2010