Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 523
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Electrical conductivity of high aspect ratio trenches in chemical-vapor deposition W technologyIvanov, Ivan P. et al. | 2006
- 534
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Formation of body-centered-cubic tantalum via sputtering on low-k dielectrics at low temperaturesSenkevich, Jay J. et al. | 2006
- 539
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Nanofabrication module integrated with optical alignerStuart, Colin et al. | 2006
- 543
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Hot-wire chemical-vapor-deposited nanometer range a-SiC: H diffusion barrier films for ultralarge-scale-integrated applicationSingh, S.K. et al. | 2006
- 547
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Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2+ secondary-ion-mass spectrometryChanbasha, A.R. et al. | 2006
- 554
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High-resolution three-dimensional reconstruction: A combined scanning electron microscope and focused ion-beam approachBansal, R.K. et al. | 2006
- 562
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Microelectronically fabricated LiCoO2-SiO2-polycrystalline-silicon power cells planarized by chemical mechanical polishingAriel, Nava et al. | 2006
- 570
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Impact of supercritical CO2 drying on roughness of hydrogen slisesquioxane e-beam resistKüpper, Daniel et al. | 2006
- 575
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ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GeN and AlGaN-GaN transistorsDora, Yuvaraj et al. | 2006
- 582
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Pattern formation by erosion sputtering on GaSb: Transition from dot to ripple formation and influence of impuritiesAlimers, T. et al. | 2006
- 587
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Real-time reflectometry-controlled focused-electron-beam-induced deposition of transparent materialsPerentes, A. et al. | 2006
- 592
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Self-organized Cu nanowires on glass and Si substrates from sputter etching Cu-substrate interfacesStepanova, M. et al. | 2006
- 599
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Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etchLiang, Eih-Zhe et al. | 2006
- 604
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Three primary color luminescence from natively and thermally oxidized nanocrystalline siliconSato, Keisuke et al. | 2006
- 608
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Dopant diffusion modeling for heteroepitaxial SiGe-Si devicesChakravarthi, S. et al. | 2006
- 613
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Mechanism of solid-liquid-solid on the silicon oxide nanowire growthWang, Chih-Yuan et al. | 2006
- 618
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Statistical variation analysis of sub-5-nm-sized electron-beam-induced depositsDorp, W.F.van et al. | 2006
- 623
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Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 mm AlGaInAs-AlGaInAs strain-compensated multiple-quantum-well laser diodesLei, Po-Hsun et al. | 2006
- 629
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Modeling of field-assisted emission from the image states of a glass substrateMayer, A. et al. | 2006
- 634
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Explicit expression on specifications of mask mean to target and mask uniformityLee, Sung-Woo et al. | 2006
- 639
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Effects of a nanocomposite carbon buffer layer on the field emission properties of multiwall carbon nanotubes and nanofibers grown by hot filament chemical vapor depositionUppireddi, Kishore et al. | 2006
- 643
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Role of neutral molecule chemistry in electron cyclotron resonance microwave plasmas capable of diamond depositionBlumenthal, R. et al. | 2006
- 651
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Low temperature, ion-enhanced, implanted photoresist removalKawaguchi, Mark N. et al. | 2006
- 657
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Surface characterization of ion-enhanced implanted photoresist removalKawaguchi, Mark N. et al. | 2006
- 664
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Fabrication of sub-transistor via holes for small and efficient power amplifiers using highly selective GaAs-InGaP wet etchingUchiyama, Hiroyuki et al. | 2006
- 669
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Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivationCheng, Shiou-Ying et al. | 2006
- 675
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Surface roughness of Ti:LiNbO3 etched by Ar-C3F8 plasma and annealing effectYang, W.-S. et al. | 2006
- 678
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Electron beam induced deposition of pure, nanoscale GeKetharanathan, Sutharsan et al. | 2006
- 682
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Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO2-Si substrates by dc sputtering techniqueCuong, Nguyen Duy et al. | 2006
- 686
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Nondestructive metrology for nanoimprint processesDeng, Xuegong et al. | 2006
- 690
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Simulation of vertical and lateral ZnO light-emitting diodesJang, Soohwan et al. | 2006
- 695
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Growth of gallium nitride nanorods by metalorganic molecular beam epitaxyKuo, Shou-Yi et al. | 2006
- 700
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First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impuritiesAhn, Chihak et al. | 2006
- 705
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Process integration and development of inverted photonic crystal arraysTinker, M. et al. | 2006
- 710
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Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectricsGottlob, Heinrich D.B. et al. | 2006
- 715
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Raman study of multiwalled carbon nanotubes functionalized with oxygen groupsMurphy, H. et al. | 2006
- 721
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Characterization of silver-saturated Ge-Te chalcogenide thin films for nonvolatile random access memoryKim, Cheol-Jung et al. | 2006
- 725
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Quantitative characterization of the surface morphology using a height difference correlation functionVanormelingen, K. et al. | 2006
- 730
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Study of two-dimensional B doping profile in Si fin field-effect transistor structures by high angle annular dark field in scanning transmission electron microscopy modeGarcia-Gutierrez, D.I. et al. | 2006
- 739
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Nanostructures on oxidized Si surfaces fabricated with the scanning tunneling microscope tip under electron-beam irradiationShkiyaev, Alexander A. et al. | 2006
- 744
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Comparison of electrical and reliability performances of TiB2-, CrB2-, and W2B5-based Ohmic contacts on n-GaNKhanna, Rohit et al. | 2006
- 750
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Gas phase chemomechanical modification of siliconLee, Michael V. et al. | 2006
- 756
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Reactive ion etching induced damage evaluation for optoelectronic device fabricationMorello, G. et al. | 2006
- 762
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High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopyBertness, K.A. et al. | 2006
- 768
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Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposuresAktary, M. et al. | 2006
- 780
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Real-time observation and optimization of tungsten atomic layer deposition process cycleLei, Wei et al. | 2006
- 790
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Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substratesGovorkov, A.V. et al. | 2006
- 795
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Chemical shrinkage material: Nanoscale patterning through interpolymer complexHata, Mitsuhiro et al. | 2006
- 800
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Honeycomb GaN micro-light-emitting diodesChoi, H.W. et al. | 2006
- 803
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Bottom-up fill mechanisms of electroless copper plating with addition of mercapto alkyl carboxylic acidWang, Zenglin et al. | 2006
- 807
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Polymer to polymer to polymer pattern transfer: Multiple molding for 100 nm scale lithographyMele, Elisa et al. | 2006
- 813
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Assembled microelectromechanical system microcolumns for miniature scanning electron microscopiesSaini, R. et al. | 2006
- 818
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Solvent enhanced resist flow for room temperature imprint lithographyChu, Changwoong et al. | 2006
- 823
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Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor depositionMestanza, S.N.M. et al. | 2006
- 828
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Experimental and computational studies of phase shift lithography with binary elastomeric masksMaria, Joana et al. | 2006
- 836
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Accurate focused ion beam sculpting of silicon using a variable pixel dwell time approachAdams, D.P. et al. | 2006
- 845
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Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxyHsiao, C.L. et al. | 2006
- 852
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Brief Reports and Comments - X-ray photoelectron spectroscopy depth profile of chemically modified porous siliconNijdam, A.Jasper et al. | 2006
- 855
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Brief Reports and Comments - Improvement on superhydrophobic behavior of carbon nanofibers via the design of experiment and analysis of varianceLin, Ta-Sen et al. | 2006
- 862
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Preface| 2006
- 863
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Field-enhanced photoemission from metals and coated materialsJensen, Kevin L. et al. | 2006
- 869
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Properties of a field emitter deduced from curvature of its Fowler-Nordheim plotEdgcombe, C.J. et al. | 2006
- 874
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Quantum size dependence of electron distribution on carbon nanotubes and its influence on field emissionFilip, L.D. et al. | 2006
- 881
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Coherent and sequential tunneling mechanisms for field electron emission through layers of wide band gap materialsFilip, V. et al. | 2006
- 887
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Temperature dependence of the work function of the Zr-O-W(100) Schottky electron source in typical operating conditions and its effect on beam brightnessBronsgeest, M.S. et al. | 2006
- 892
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Full scale simulation of a field-emitter arrays based electron source for free-electron lasersDehler, M. et al. | 2006
- 898
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Statistical modeling of field-enhancement-factor distribution of nanostructured carbon filmsPark, Kyung Ho et al. | 2006
- 903
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Simulations of emission characteristics of a multigated single carbon nanotube field emitterHu, Yuan et al. | 2006
- 909
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Theoretical analysis of triple junction field emission for a type of cold cathodeChung, M.S. et al. | 2006
- 913
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Analysis of the energy distribution of field electrons from metals and semiconductorsChung, M.S. et al. | 2006
- 918
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Theory, Modeling and Simulation - Simulation study of junction effect on field emission from one-dimensional nanostructure grown on silicon substrateLan, Yung-Chiang et al. | 2006
- 924
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - High Frequency Applications of Field Emission - Smith-Purcell radiation from ultraviolet to infrared using a Si field emitterNeo, Yoichro et al. | 2006
- 927
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - High Frequency Applications of Field Emission - rf microelectromechanical system device with a lateral field-emission detectorYamashita, Kiyotaka et al. | 2006
- 932
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardmentYoshida, Tomoya et al. | 2006
- 936
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - HfC field emitter array controlled by built-in poly-Si thin film transistorNagao, M. et al. | 2006
- 940
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Field emission characteristics of CuO nanowires grown on brown-oxide-coated Cu films on Si substrates by conductive heating in airYeon, Soon-Chang et al. | 2006
- 945
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Electrical and emission properties of nanocomposite SiOx(Si) and SiO2(Si) filmsEvtukh, A.A. et al. | 2006
- 950
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Development of microfocused x-ray source by using carbon nanotube field emitterKawakita, Kunihiko et al. | 2006
- 953
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Single-mask multiple lateral nanodiamond field emission devices fabrication techniqueSubramanian, K. et al. | 2006
- 958
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Electron field-emission properties of Ag-SiO2 nanocomposite layersTsang, W.M. et al. | 2006
- 962
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Study of the triode structure in a field emission display elementWei, Lei et al. | 2006
- 967
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Field emission from H- and O-terminated heavily P-doped homoepitaxial diamondYamada, Takatoshi et al. | 2006
- 971
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Electron emission from planar-type cathodes based on nanocrystalline silicon thin filmsShimawaki, Hidetaka et al. | 2006
- 974
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Novel Field Emission Materials and Devices - Nanoseconds field emitted current pulses from ZrC needles and field emitter arraysGanter, R. et al. | 2006
- 979
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Improvement of emission characteristics uniformity of carbon nanotube field emission display by surface treatmentShiroishi, Tetsuya et al. | 2006
- 983
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Quantum effect in the field emission of carbon nanotubesLiang, Shi-Dong et al. | 2006
- 988
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - 1 A-cm2 current density from microgated carbon nanotube field-emitter arrays grown by dc plasma chemical-vapor depositionHsu, David S.Y. et al. | 2006
- 993
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Total energy distribution of field emission electrons from a film of carbon nanopearlsMouton, R. et al. | 2006
- 997
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Vertically aligned carbon nanotube arrays for giant field emission displaysMauger, Matthieu et al. | 2006
- 1004
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Growth characteristics of carbon nanotubes on nanotip-formed substrateSato, Hideki et al. | 2006
- 1008
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Carbon nanostructure field emission devicesWong, Y.M. et al. | 2006
- 1013
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Surface treatment of carbon nanotube cathodes with glass fillers using KrF excimer laser for field-emission displaysHonda, T. et al. | 2006
- 1017
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission from Carbron Nanotubes - Synthesis and emission properties of carbon nanotubes grown by sandwich catalyst stacksChen, Zexiang et al. | 2006
- 1021
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Industrial Applications - Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensingNegishi, Nobuyasu et al. | 2006
- 1026
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Industrial Applications - All-inverter complementary metal oxide semiconductor based dose control circuit for using vertically aligned carbon nanofibers in maskless lithographyIslam, S.K. et al. | 2006
- 1030
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Industrial Applications - Ultracompact electron-beam columnKuo, Huei Pei et al. | 2006
- 1035
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Industrial Applications - Amorphous selenium based photodetector driven by field emission current from N-doped diamond cold cathodeKato, Nanako et al. | 2006
- 1040
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Space Applications - Microchannel plates at high rates: The challenges for future space plasma missionsKataria, D.O. et al. | 2006
- 1045
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Characterization and Analysis - Parameter dispersion characterization for arrays of HfC-coated emitters on poly-Si substrateNicolaescu, D. et al. | 2006
- 1052
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Characterization and Analysis - Study on the field-emission characteristics of a-C : H filmsLu, Zhanling et al. | 2006
- 1056
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Characterization and Analysis - Variability in long-duration operation of silicon tip field emission devicesAplin, K.L. et al. | 2006
- 1061
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Characterization and Analysis - Influence of nanocrystalline structure on work function of tungstenMulyukov, R.R. et al. | 2006
- 1067
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Characterization and Analysis - Improved current densities of carbon nanotube cathodes by pulsed operationLysenkov, D. et al. | 2006
- 1072
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PAPERS FROM THE 18th INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE - Field Emission Characterization and Analysis - Investigation of fabrication uniformity and emission reliability of silicon field emitters for use in spaceWang, L. et al. | 2006
- 1076
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CUMULATIVE AUTHOR INDEX| 2006
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An international journal devoted to Microelectronics and Nanometer Structures - Processing, Measurement, and Phenomena| 2006
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Letters - Mo-Al-Mo-Au Ohmic contact scheme for AlxGa1-xN-GaN high electron mobility transistors annealed at 500 (degree)CBasu, A. et al. | 2006
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Letters - High density plasma chemical vapor deposition gap-fill mechanismsMungekar, Hemant P. et al. | 2006
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Letters - Innovative approach for replicating micropatterns in a conducting polymerLuo, Cheng et al. | 2006