IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 2823
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EDITORIAL - Changes in the Editorial BoardVerret, D et al. | 2011
- 2823
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Changes in the Editorial BoardVerret, Doug et al. | 2011
- 2824
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Silicon and Column IV Semiconductor Devices - Atomistic Investigation of Low-Field Mobility in Graphene NanoribbonsBetti, A et al. | 2011
- 2824
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Atomistic Investigation of Low-Field Mobility in Graphene NanoribbonsBetti, A. / Fiori, G. / Iannaccone, G. et al. | 2011
- 2831
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Interconnect Network Analysis of Many-Core ChipsBalakrishnan, A. / Naeemi, A. et al. | 2011
- 2838
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A New Method for Layout-Dependent Parasitic Capacitance Analysis and Effective Mobility Extraction in Nanoscale Multifinger MOSFETsKuo-Liang Yeh, / Jyh-Chyurn Guo, et al. | 2011
- 2847
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Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport EffectsNayfeh, O. M. et al. | 2011
- 2854
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An Inversion-Charge Analytical Model for Square Gate-All-Around MOSFETsMoreno Perez, Enrique / Roldan Aranda, Juan Bautista / Garcia Ruiz, Francisco J. et al. | 2011
- 2862
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A Circuit Simulation Method Based on Physical Approach for the Analysis of Mot_bal99lt1 p-i-n Diode CircuitsXing Chen, / Jun-quan Chen, / Huang, Kama et al. | 2011
- 2862
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A Circuit Simulation Method Based on Physical Approach for the Analysis of Mot_bal991t1 p-i-n Diode CircuitsChen, Xing / Chen, Jun-quan / Kama, Huang et al. | 2011
- 2862
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A Circuit Simulation Method Based on Physical Approach for the Analysis of Mot-ba1991tl p-i-n Diode CircuitsChen, X et al. | 2011
- 2871
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Analytical Correction for Effective Mobility Measurements in MOSFETsMorgensen, M. P. / Lunardi, L. M. et al. | 2011
- 2874
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Comprehensive Microscopic Analysis of Laser-Induced High Doping Regions in SiliconGundel, P. / Suwito, D. / Jager, U. et al. | 2011
- 2878
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A Physical Model of the Temperature Dependence of the Current Through SiO2/HfO2 StacksVandelli, L et al. | 2011
- 2878
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A Physical Model of the Temperature Dependence of the Current Through Formula Not Shown StacksVandelli, L. / Padovani, A. / Larcher, L. et al. | 2011
- 2878
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A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ StacksVandelli, L. / Padovani, A. / Larcher, L. et al. | 2011
- 2888
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Fourier Transform Infrared Spectroscopy of Moisturized Low- $\kappa$ Dielectric MaterialsKubasch, C. / Schumacher, H. / Ruelke, H. et al. | 2011
- 2888
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Fourier Transform Infrared Spectroscopy of Moisturized Low- Formula Not Shown Dielectric MaterialsKubasch, C. / Schumacher, H. / Ruelke, H. et al. | 2011
- 2888
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Fourier Transform Infrared Spectroscopy of Moisturized Low-k Dielectric MaterialsKubasch, C et al. | 2011
- 2895
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Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain TunnelingHo, Byron / Nuo Xu, / Tsu-Jae King Liu, et al. | 2011
- 2903
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Theory of the Junctionless Nanowire FETGnani, E. / Gnudi, A. / Reggiani, S. et al. | 2011
- 2911
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Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- Formula Not Shown Gate DielectricMoselund, K. E. / Bjork, M. T. / Schmid, H. et al. | 2011
- 2911
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Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate DielectricMoselund, K. E. / Bjork, M. T. / Schmid, H. et al. | 2011
- 2917
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Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-$k$/Metal GateSe-Hoon Lee, / Majhi, P. / Ferrer, D. A. et al. | 2011
- 2917
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Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High- Formula Not Shown /Metal GateLee, S. H. / Majhi, P. / Ferrer, D. A. et al. | 2011
- 2924
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Nonvolatile Amorphous-Silicon Thin-Film-Transistor Memory Structure for Drain-Voltage Independent Saturation CurrentYifei Huang, / Wagner, S. / Sturm, J. C. et al. | 2011
- 2928
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Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS ApplicationBongmook Lee, / Lichtenwalner, Daniel J. / Novak, Steven R. et al. | 2011
- 2928
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Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High- Formula Not Shown PMOS ApplicationLee, B. / Lichtenwalner, D. J. / Novak, S. R. et al. | 2011
- 2936
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TCAD Assessment of Device Design Technologies for Enhanced Performance of Nanoscale DG MOSFETSharma, R. K. / Gupta, M. / Gupta, R. S. et al. | 2011
- 2944
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Improving Safe Operating Area of nLDMOS Array With Embedded Silicon Controlled Rectifier for ESD Protection in a 24-V BCD ProcessWen-Yi Chen, / Ming-Dou Ker, et al. | 2011
- 2952
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Characterization of the Variable Retention Time in Dynamic Random Access MemoryHeesang Kim, / Byoungchan Oh, / Younghwan Son, et al. | 2011
- 2959
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Asymmetric Independent-Gate MOSFET SRAM for High StabilityMingu Kang, / Park, H. K. / Wang, J. et al. | 2011
- 2966
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3-D Vertical FG nand Flash Memory With a Novel Electrical S/D Technique Using the Extended Sidewall Control GateMoon-Sik Seo, / Sung-Kye Park, / Endoh, Tetsuo et al. | 2011
- 2974
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Development of a New pHEMT-Based Electrostatic Discharge Protection StructureQiang Cui, / Chia-Shih Cheng, / Liou, Juin J. et al. | 2011
- 2974
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Compound Semiconductor Devices - Development of a New pHEMT-Based Electrostatic Discharge Protection StructureCui, Q et al. | 2011
- 2981
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Investigations of Novel $\Gamma$-Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure TechniquesChing-Sung Lee, / Bo-Yi Chou, / Sheng-Han Yang, et al. | 2011
- 2981
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Investigations of Novel Formula Not Shown -Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure TechniquesLee, C. S. / Chou, B. Y. / Yang, S. H. et al. | 2011
- 2981
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Investigations of Novel Γ-Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure TechniquesLee, C-S et al. | 2011
- 2990
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InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate OxidesZhao, H. / Chen, Y. / Wang, Y. et al. | 2011
- 2996
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Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical MethodMeneghini, M. / Ronchi, N. / Stocco, A. et al. | 2011
- 3004
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Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT ModelsJohansen, T. K. / Krozer, V. / Nodjiadjim, V. et al. | 2011
- 3012
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A Depletion-Mode In–Ga–Zn–O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level ShifterBinn Kim, / Seung Chan Choi, / Jeong-Soo Lee, et al. | 2011
- 3012
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Thin Film Devices - A Depletion-Mode In-Ga-Zn-O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level ShifterKim, B et al. | 2011
- 3018
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Extraction of Trap Densities in ZnO Thin-Film Transistors and Dependence on Oxygen Partial Pressure During Sputtering of ZnO FilmsKimura, M. / Furuta, M. / Kamada, Y. et al. | 2011
- 3025
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Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors—Part II: Contact Resistance in Short Channel DevicesTorricelli, F. / Smits, E. C. P. / Meijboom, J. R. et al. | 2011
- 3034
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Two-Stage Degradation of p-Channel Poly-Si Thin-Film Transistors Under Dynamic Negative Bias Temperature StressJie Zhou, / Mingxiang Wang, / Man Wong, et al. | 2011
- 3042
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Performance Limits of Monolayer Transition Metal Dichalcogenide TransistorsLeitao Liu, / Kumar, S. B. / Yijian Ouyang, et al. | 2011
- 3048
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Amorphous Si Rear Schottky Junction Solar Cell With a LiF/Al Back ElectrodeLiang Fang, / Seung Jae Baik, / Sooyeon Lim, et al. | 2011
- 3053
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Optoelectronics, Displays, and Imaging - Analysis of Current Components and Estimation of Internal Quantum Efficiency in Light-Emitting DiodesLee, J-M et al. | 2011
- 3053
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Analysis of Current Components and Estimation of Internal Quantum Efficiency in Light-Emitting DiodesJae-Man Lee, / Sang-Bae Kim, et al. | 2011
- 3058
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High-Power InGaN-Based LED With Tunneling-Junction-Induced Two-Dimensional Electron Gas at AlGaN/GaN HeterostructureJae-Hoon Lee, / Jung-Hee Lee, et al. | 2011
- 3065
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Solid-State Power and High Voltage Devices - Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power ApplicationsRodríguez, A et al. | 2011
- 3065
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Novel Electronic Devices in Macroporous Silicon: Design of FET Transistors for Power ApplicationsRodriguez, A. / Vega, D. / Najar, R. et al. | 2011
- 3072
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Physics-Based Analytical Model for HCS Degradation in STI-LDMOS TransistorsReggiani, S. / Poli, S. / Denison, M. et al. | 2011
- 3081
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A Quasi-Two-Dimensional Model for High-Power RF LDMOS TransistorsEverett, J. P. / Kearney, M. J. / Rueda, H. et al. | 2011
- 3089
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Materials, Processing, and Packaging - Extreme-Value Statistics and Poisson Area Scaling With a Fatal-Area Ratio for Low-k: Dielectric TDDB ModelingChen, F et al. | 2011
- 3089
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Extreme-Value Statistics and Poisson Area Scaling With a Fatal-Area Ratio for Low- $k$ Dielectric TDDB ModelingFen Chen, / Shinosky, M. A. / Aitken, J. M. et al. | 2011
- 3089
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Extreme-Value Statistics and Poisson Area Scaling With a Fatal-Area Ratio for Low- Formula Not Shown Dielectric TDDB ModelingChen, F. / Shinosky, M. A. / Aitken, J. M. et al. | 2011
- 3099
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Solid-State Device Phenomena - A Versatile Memristor Model With Nonlinear Dopant KineticsProdromakis, T et al. | 2011
- 3099
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A Versatile Memristor Model With Nonlinear Dopant KineticsProdromakis, Themistoklis / Boon Pin Peh, / Papavassiliou, Christos et al. | 2011
- 3106
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Investigation of the Origin of VT/VFB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface PropertiesLee, Bongmook / Novak, S.R. / Lichtenwalner, D.J. et al. | 2011
- 3106
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Investigation of the Origin of Formula Not Shown Modulation by Formula Not Shown Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- Formula Not Shown Layer, and Interface PropertiesLee, B. / Novak, S. R. / Lichtenwalner, D. J. et al. | 2011
- 3106
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Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface PropertiesBongmook Lee, / Novak, S. R. / Lichtenwalner, D. J. et al. | 2011
- 3106
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Investigation of the Origin of VY/VFB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface PropertiesLee, B et al. | 2011
- 3116
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Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap MemoriesAmoroso, S. M. / Monzio Compagnoni, Christian / Mauri, A. et al. | 2011
- 3124
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Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM DevicesWalczyk, C et al. | 2011
- 3124
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Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM DevicesWalczyk, C. / Walczyk, D. / Schroeder, T. et al. | 2011
- 3124
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Impact of Temperature on the Resistive Switching Behavior of Embedded Formula Not Shown -Based RRAM DevicesWalczyk, C. / Walczyk, D. / Schroeder, T. et al. | 2011
- 3132
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Low-Frequency Noise Characterization of Strained Germanium pMOSFETsSimoen, E. / Mitard, J. / De Jaeger, B. et al. | 2011
- 3140
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Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETsKuo-Liang Yeh, / Jyh-Chyurn Guo, et al. | 2011
- 3147
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A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and SimulationsPadovani, A. / Arreghini, A. / Vandelli, L. et al. | 2011
- 3156
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Improved Modeling of Low-Frequency Noise in MOSFETs—Focus on Surface Roughness Effect and Saturation RegionBoutchacha, T. / Ghibaudo, G. et al. | 2011
- 3162
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Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's TheorySalvatore, G. A. / Lattanzio, L. / Bouvet, D. et al. | 2011
- 3170
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Influence of Metal–Graphene Contact on the Operation and Scalability of Graphene Field-Effect TransistorsPei Zhao, / Qin Zhang, / Jena, Debdeep et al. | 2011
- 3170
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Molecular and Organic Devices - Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect TransistorsZhao, P et al. | 2011
- 3179
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Laser-Sintered Formula Not Shown Films for Dye Solar Cell Fabrication: An Electrical, Morphological, and Electron Lifetime InvestigationMincuzzi, G. / Vesce, L. / Liberatore, M. et al. | 2011
- 3179
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Laser-Sintered TiO2 Films for Dye Solar Cell Fabrication: An Electrical, Morphological, and Electron Lifetime InvestigationMincuzzi, G et al. | 2011
- 3179
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Laser-Sintered $\hbox{TiO}_{2}$ Films for Dye Solar Cell Fabrication: An Electrical, Morphological, and Electron Lifetime InvestigationMincuzzi, G. / Vesce, L. / Liberatore, M. et al. | 2011
- 3189
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Vacuum Electron Devices - A Bipolar Vacuum Microelectronic DeviceStoner, B R et al. | 2011
- 3189
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A Bipolar Vacuum Microelectronic DeviceStoner, B. R. / Piascik, J. R. / Gilchrist, K. H. et al. | 2011
- 3195
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Performance of an Oxide Cathode Prepared From Submicrometer CarbonatesXiaoxia Wang, / Xianheng Liao, / Qinglan Zhao, et al. | 2011
- 3200
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Study of the Influence of Transverse Velocity on the Design of Cold Cathode-Based Electron Guns for Terahertz DevicesUlisse, G. / Brunetti, F. / Di Carlo, A. et al. | 2011
- 3205
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Study of the Multipactor Effect in Bandpass Wedge-Shaped Waveguide FiltersHueso, J. / Raboso, D. / Schmitt, D. et al. | 2011
- 3213
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Modeling Investigation of an Ultrawideband Terahertz Sheet Beam Traveling-Wave Tube Amplifier CircuitYoung-Min Shin, / Baig, A. / Barnett, L. R. et al. | 2011
- 3219
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BRIEFS - On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS TransistorsDe Michielis, M et al. | 2011
- 3219
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On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS TransistorsDe Michielis, M. / Conzatti, F. / Esseni, D. et al. | 2011
- 3224
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Boosting Short-Circuit Current With Rationally Designed Periodic Si Nanopillar Surface Texturing for Solar CellsShe Mein Wong, / Hong Yu Yu, / Yali Li, et al. | 2011
- 3230
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An Analytical Subthreshold Model for Polysilicon Thin-Film Transistors by a Quasi-Two-Dimensional SolutionWei-Jing Wu, / Ruo-He Yao, / Ri-Hui Yao, et al. | 2011
- 3236
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Special issue on materials, processing and reliability of 3D interconnects| 2011
- 3236
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ANNOUNCEMENTS - Call for Papers — Special Issue of IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY on Materials, Processing, and Reliability of 3D Interconnects| 2011
- C1
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Table of contents| 2011
- C2
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IEEE Transactions on Electron Devices publication information| 2011
- C3
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IEEE Transactions on Electron Devices information for authors| 2011