Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 259
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Regular Articles - Formation and shape of InAs nanoparticles on GaAs surfacesBottomley, D.J. et al. | 1999
- 265
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Regular Articles - Application of scanning tunneling microscopy to aluminum nanocluster deposition on siliconHu, Xiaoming et al. | 1999
- 269
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Regular Articles - Electrochemical microprocess by scanning ion-conductance microscopyZhang, Haijun et al. | 1999
- 273
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Regular Articles - Quantifying surface topography and scanning probe image reconstructionKitching, S. et al. | 1999
- 280
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Regular Articles - Analysis of a micromachine based vacuum pump on a chip actuated by the thermal transpiration effectYoung, Robert M. et al. | 1999
- 288
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Regular Articles - Atomic force microscope observation of plasmid deoxyribose nucleic acid with restriction enzymeNakamura, T. et al. | 1999
- 294
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Regular Articles - Scanning tunneling microscopy tip shape imaging by "shadowing": Monitoring of in situ tip preparationVoigtländer, Bert et al. | 1999
- 297
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Regular Articles - Field emission microscopy study of cesium adsorbed on ZrB2 and TiB2Hansen, Marie et al. | 1999
- 303
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Regular Articles - Interaction of H2O with active Spindt-type molybdenum field emitter arraysChalamala, Babu R. et al. | 1999
- 306
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Regular Articles - Electron field emission from a silicon subsurface based on a generalized Airy function approachKhairurrijal et al. | 1999
- 311
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Regular Articles - Electron field emission from a patterned diamondlike carbon flat cathodeMao, D.S. et al. | 1999
- 315
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Regular Articles - Single-mask silicon microtriodeGarner, David M. et al. | 1999
- 320
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Regular Articles - Novel fabrication technique for 0.1 mm T-shaped gate with i-line negative resist and poly(methylmethacrylate)Anda, Yoshiharu et al. | 1999
- 323
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Regular Articles - Enhanced pattern area density proximity effect correctionEa, C.S. et al. | 1999
- 334
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Regular Articles - Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithographyReynolds, Geoffrey W. et al. | 1999
- 345
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Regular Articles - Sub-100 nm KrF lithography for complementary metal -- Oxide -- Semiconductor circuitsFritze, M. et al. | 1999
- 350
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Regular Articles - Effect of Coulomb interaction and pKa on acid diffusion in chemically amplified resistsShi, Xuelong et al. | 1999
- 355
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Regular Articles - Study on characterizing fluorocarbon polymer films deposited on an inner surface during high-aspect-ratio contact hole etching using secondary ion mass spectroscopyLiu, Guo Lin et al. | 1999
- 362
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Regular Articles - Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si)Steckl, A.J. et al. | 1999
- 366
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Regular Articles - Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2-Ar mixtureHahn, Y.B. et al. | 1999
- 372
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Regular Articles - Effects of oxygen and fluorine on the dry etch characteristics of organic low-k dielectricsBaklanov, M.R. et al. | 1999
- 380
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Regular Articles - Diffusion of copper into polyimide deposited by ionized cluster beamKim, N.Y. et al. | 1999
- 385
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Regular Articles - Properties and thermal stability of chemically vapor deposited W-rich WSix thin filmsWang, M.T. et al. | 1999
- 392
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Regular Articles - Formation of silicided shallow p+ n junctions by BF+-2 implantation into thin amorphous-Si or Ni-amorphous-Si films on Si substrates and subsequent Ni silicidationJuang, M.H. et al. | 1999
- 397
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Regular Articles - High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealingSanz-Maudes, J. et al. | 1999
- 405
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Regular Articles - Ionized titanium deposition into high aspect ratio vias and trenchesZhong, G. et al. | 1999
- 410
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Regular Articles - Investigating the process latitude of a low temperature metalorganic chemical vapor deposition TiNitride processBulger, J.M. et al. | 1999
- 416
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Regular Articles - Properties of titanium nitride film deposited by ionized metal plasma sourceTanaka, Yoichiro et al. | 1999
- 423
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Regular Articles - Effect of in situ plasma oxidation of TiN diffusion barrier for AlSiCu-TiN-Ti metallization structure of integrated circuitsFortin, V. et al. | 1999
- 432
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Regular Articles - Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1-x as a metallizationChen, C.-P. et al. | 1999
- 443
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Regular Articles - Particulate contamination in tungsten low pressure chemical vapor deposition: An experimental studyMacGibbon, B.S. et al. | 1999
- 448
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Regular Articles - Designing test interconnect structures for micro-scale stress measurement: An analytical guidanceShen, Y.-L. et al. | 1999
- 455
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Regular Articles - Room-temperature radio frequency sputtered Ta2O5: A new etch mask for bulk silicon dissolved processesChu, A.K. et al. | 1999
- 460
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Regular Articles - Properties of gate quality silicon dioxide films deposited on Si-Ge using remote plasma-enhanced chemical vapor deposition with no preoxidationSharma, R. et al. | 1999
- 465
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Regular Articles - Metal -- Ge-Si heterostructures for near-infrared light detectionColace, L. et al. | 1999
- 468
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Regular Articles - Micro-Raman study of free-standing porous silicon samplesTrusso, Sebastiano et al. | 1999
- 474
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Regular Articles - Reflection high-energy electron diffraction oscillations on rotating substratesBraun, W. et al. | 1999
- 477
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Regular Articles - Remote microwave plasma source for cleaning chemical vapor deposition chambers: Technology for reducing global warming gas emissionsRaoux, S. et al. | 1999
- 486
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Brief Reports and Comments - Emission stability of a diamond-like carbon coated metal-tip field emitter arrayJung, Jae Hoon et al. | 1999
- 489
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Brief Reports and Comments - Performance of electrophoretic deposited low voltage phosphors for full color field emission display devicesJin, Y.W. et al. | 1999
- 494
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Brief Reports and Comments - Controlled conjugation of nanoparticles with single stranded DNAMaeda, Y. et al. | 1999
- 497
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Rapid Communications - Effect of surface treatment by (NH4)2Sx solution on the reduction of ohmic contact resistivity of p-type GaNKim, Jong Kyu et al. | 1999
- 500
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Shop Notes - Simple lithographic technique for chip repairing using a light microscopeCarelli, P. et al. | 1999
- 505
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Papers from the 11th International Vacuum Microelectronics - Conference Preface| 1999
- 506
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Transfer-matrix quantum-mechanical theory of electronic field emission from nanotipsMayer, A. et al. | 1999
- 515
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Semianalytical model of electron source potential barriersJensen, K.L. et al. | 1999
- 520
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Transport phenomena related to electron field emission from semiconductors through thick oxide layersFilip, V. et al. | 1999
- 526
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Field emission: New theory for the derivation of emission area from a Fowler -- Nordheim plotForbes, Richard G. et al. | 1999
- 534
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Use of a spreadsheet for Fowler -- Nordheim equation calculationsForbes, Richard G. et al. | 1999
- 542
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Modeling of field emission microtriodes with Si semiconductor emittersNicolaescu, Dan et al. | 1999
- 547
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Investigation of the formation mechanism of Spindt-type cathode by simulation and experimentsLee, Hangwoo et al. | 1999
- 552
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Simulation of room temperature thermionic emission from AlxGa1-xN negative electron affinity cathodesHatfield, C.W. et al. | 1999
- 557
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Modeling of the electron field emission process in polycrystalline diamond and diamond-like carbon thin filmsSilva, S.R.P. et al. | 1999
- 562
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Papers from the 11th International Vacuum Microelectronics - Field Emission Theory and Device Simulation - Theoretical study of thermal instability of Mo tips with and without diamond coatingsYu, Z.X. et al. | 1999
- 567
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Novel field emitter array technology for subhalf-micron diameter gatesYoshiki, M. et al. | 1999
- 570
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Fabrication and characteristics of an emitter-sharpened double-gate racetrack-shaped field emitter structureWang, Baoping et al. | 1999
- 575
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - High emission current double-gated field emitter arraysHosono, Akihiko et al. | 1999
- 580
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Nonlithographic technique for the production of large area high density gridded field emission sourcesHolland, E.R. et al. | 1999
- 583
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Fabrication of gated nanosize Si-tip arrays for high perveance electron beam applicationsChoi, S.S. et al. | 1999
- 588
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Low-voltage operation from the tower structure metal -- Oxide -- Semiconductor field-effect transistor Si field emitterKoga, Keisuke et al. | 1999
- 592
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Comparative study of electron emission characteristics of silicon tip arrays with and without amorphous diamond coatingShe, J.C. et al. | 1999
- 596
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Electron field emission from amorphous siliconSilva, S.R.P. et al. | 1999
- 601
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Emission stability of anodized silicon field emitter arraysKim, Hong-Ryong et al. | 1999
- 604
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Emission characteristics of Spindt-type field emitter arrays in oxygen ambientGotoh, Y. et al. | 1999
- 608
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Atom-by-atom analysis of microtip emitter surfaces by the scanning atom probeNishikawa, O. et al. | 1999
- 613
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Transition metal carbide field emitters for field-emitter array devices and high current applicationsMackie, W.A. et al. | 1999
- 620
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - On the atomic arrangement on the ZrO-W(100) cathode surface: Models for low-energy electron diffractionNakane, Hideaki et al. | 1999
- 623
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Influence of the composition of a NbNx thin-film field-emitter array on emission characteristicsNagao, M. et al. | 1999
- 627
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Effects of phase and thickness of cobalt silicide on field emission properties of silicon emittersYoon, Young Joon et al. | 1999
- 632
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Investigation of thickness effects on AIN coated metal tips by in situ I -- V measurementKang, D.H. et al. | 1999
- 635
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Investigation of field emission characteristics for Si-base materials: Titanium silicide, poly-Si, and single crystal SiLim, Moo-Sup et al. | 1999
- 638
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Fabrication of tungsten-coated silicon-based gated emittersChen, L. et al. | 1999
- 642
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Planar field emitters fabricated by sulfur-doped boron nitrideYokota, Yuuko et al. | 1999
- 647
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Novel nanoscale field emission structures: Fabrication technology, experimental, and calculated characteristicsTatarenko, N.I. et al. | 1999
- 655
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Papers from the 11th International Vacuum Microelectronics - Field Emitter Fabrication and Characterization - Observation of the resonance tunneling in field emission structuresLitovchenko, V.G. et al. | 1999
- 659
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Mechanisms of electron field emission from diamond, diamond-like carbon, and nanostructured carbonRobertson, J. et al. | 1999
- 666
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Characterization of field emission cathodes with different forms of diamond coatingsZhirnov, V.V. et al. | 1999
- 670
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Integral and local field emission analyses of nanodiamond coatings for power applicationsGöhl, A. et al. | 1999
- 674
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Low-voltage electron emission from chemical vapor deposition graphite filmsObraztsov, A.N. et al. | 1999
- 679
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Properties of plasma enhanced chemical vapor deposition diamond-like carbon films as field electron emitters prepared in different regimesEvtukh, A.A. et al. | 1999
- 684
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Field emission characteristics of diamond films with different surface morphologiesJi, H. et al. | 1999
- 688
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Study of field emission of acid treated diamond filmsYuan, G. et al. | 1999
- 690
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Study on improved electron emission characteristics of micropatterned diamond-like carbon filmsShin, I.H. et al. | 1999
- 696
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Local field emission features of thick diamond films on various silicon substratesGöhl, A. et al. | 1999
- 700
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Raman analysis and field emission study of ion beam etched diamond filmsPark, M. et al. | 1999
- 705
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Studies of field emission from bias-grown diamond thin filmsDing, M.Q. et al. | 1999
- 710
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Study of instability in the field electron emission from amorphous diamond filmsChen, J. et al. | 1999
- 715
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Electrophoresis of nanodiamond powder for cold cathode fabricationAlimova, A.N. et al. | 1999
- 719
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Field emission from thin film diamond grown using a magnetically enhanced radio frequency plasma sourceProffitt, Simon S. et al. | 1999
- 723
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Elucidation of field emission characteristics of phosphorous-doped diamond filmsKuriyama, Kenji et al. | 1999
- 728
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Effects of nitrogen addition on the structure and field emission properties of amorphous carbonChi, Eung Joon et al. | 1999
- 731
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coatingChi, Eung Joon et al. | 1999
- 734
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamondPark, M. et al. | 1999
- 740
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Papers from the 11th International Vacuum Microelectronics - Carbon and Diamond-Based Emitters - Subvolt turn-on voltage self-align gate diamond emitter fabricated by self-align-gate-sharpened molding techniqueKang, W.P. et al. | 1999
- 744
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Five inch full color field emission displays with narrow gap studiesKim, J.M. et al. | 1999
- 750
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Engineering phosphors for field emission displaysVecht, Aron et al. | 1999
- 758
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Advances in field emission displays phosphorsHolloway, P.H. et al. | 1999
- 765
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Highly efficient cathodoluminescent phosphors and screens for mid- and high-voltage field emission displaysGoldburt, E.T. et al. | 1999
- 769
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - High field characteristics of thin-film metal electrodesMa, Xianyun et al. | 1999
- 773
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Resistive arc protection for field-emitter-array cold cathodes used in X-band inductive output amplifiersParameswaran, L. et al. | 1999
- 778
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Microwave amplification in structures with field and secondary emissionGaldetskiy, A. et al. | 1999
- 781
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Distributed amplifier based on a field emitter array and a low-loss transmission lineGaldetskiy, A. et al. | 1999
- 784
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - New concept of lateral GaAs field emitter for sensor applicationsArslan, D. et al. | 1999
- 788
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Papers from the 11th International Vacuum Microelectronics - Field Emission Displays and Other Applications - Analysis of a field-emission magnetic sensor with compensated electron-beam deviationMarques, M.I. et al. | 1999
- 798
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Preface| 1999
- 799
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Research and development in plasma-based ion implantation in Europe. I. Apparatus and projectsEnsinger, W. et al. | 1999
- 808
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Plasma-based Ion Implantation Facility and Research at the National Accelerator Centre, FaureProzesky, V.M. et al. | 1999
- 813
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Surface enhancement by shallow carbon implantation for improved adhesion of diamond-like coatingsMalaczynski, Gerard W. et al. | 1999
- 818
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Processing of diamondlike carbon using plasma immersion ion depositionLee, D.H. et al. | 1999
- 822
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Optical properties of diamond-like carbon synthesized by plasma immersion ion processingHe, Xiao-Ming et al. | 1999
- 828
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Investigation of ion implanted electroplated chromium from a trivalent bathHamdi, A.H. et al. | 1999
- 832
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Nitrogen and boron implantation into austenitic stainless steelMändl, S. et al. | 1999
- 836
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Plasma immersion ion implantation for improvement of mechanical properties of AISI M2 steelUglov, V.V. et al. | 1999
- 840
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Titanium nitride prepared by plasma-based titanium-ion implantationYukimura, Ken et al. | 1999
- 845
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Effects of the Ti-Al atomic ratio on the properties of gradient (Ti,Al)N films synthesized by ion beam assisted depositionHe, Xiao-Ming et al. | 1999
- 851
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Process window and mechanism of surface property enhancement of 9Cr18 steel using plasma immersion ion implantationZeng, Z.M. et al. | 1999
- 855
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Nitriding stainless steels at moderate temperature: Time- and depth-resolved characterization of the near surface composition during the nitriding processParascandola, S. et al. | 1999
- 859
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Surface treatment of pure and alloyed aluminum using a new plasma-based ion implanter apparatusPopovici, D. et al. | 1999
- 863
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - High dose rate effects in silicon by plasma source ion implantationChun, M. et al. | 1999
- 867
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Ion implantation by vacuum arc plasmasSchuelke, T. et al. | 1999
- 871
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Pulsed metal ion source by triggerless shunting arc dischargeYukimura, Ken et al. | 1999
- 875
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Simulation of dose uniformity for different pulse durations during inner surface plasma immersion ion implantationLiu, A.G. et al. | 1999
- 879
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - New line of high voltage high current pulse generators for plasma-based ion implantationMaulat, O. et al. | 1999
- 883
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Conformal ion implantation using pulsed plasma sourcesAdler, R.J. et al. | 1999
- 888
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Solid-state modulators for plasma immersion ion implantation applicationsGaudreau, Marcel P.J. et al. | 1999
- 895
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Papers from the Fourth International Plasma-Based Ion Implantation Workshop - Integrated high voltage modulator for plasma immersion ion implantationGünzel, R. et al. | 1999
- 900
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AUTHOR INDEX| 1999
- 901
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CUMULATIVE AUTHOR INDEX| 1999