Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
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Highly thermally stable in situ SiNX passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structureChiu, Hsien-Chin / Chen, Chao-Hung / Yang, Chih-Wei et al. | 2013
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Field emission properties of carbon nanotube emitters dependent on electrode geometrySong, Yenan / Hoon Shin, Dong / Jeon, Seok-Gy et al. | 2013
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Organic–inorganic hybrid gate dielectric for solution-processed ZnO thin film transistorsOh, Ji-Young / Lim, Sang-Chul / Yeon Kim, Joo et al. | 2013
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Low-temperature plasmas in carbon nanostructure synthesisLevchenko, Igor / Keidar, Michael / Xu, Shuyan et al. | 2013
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Determining local residual stresses from high resolution wafer geometry measurementsGong, Jie / Vukkadala, Pradeep / Sinha, Jaydeep K. et al. | 2013
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High current hybrid single walled carbon nanotube/graphene field emittersLeberl, Daniela / Hensel, Bernhard / Kapitza, Heinrich et al. | 2013
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Flexible substrate and release layer for flexible MEMS devicesAhmed, Moinuddin / Butler, Donald P. et al. | 2013
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Low-damage silicon etching using a neutral beamMiwa, Kazuhiro / Nishimori, Yuki / Ueki, Shinji et al. | 2013
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Three-step growth of metamorphic GaAs on Si(001) by low-pressure metal organic chemical vapor depositionWang, Yifan / Wang, Qi / Jia, Zhigang et al. | 2013
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Vacuum frequency mixer with a field emitter arrayGotoh, Yasuhito / Yasutomo, Yoshiki / Tsuji, Hiroshi et al. | 2013
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Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineeringSheng, Josephine J. / Leonhardt, Darin / Han, Sang M. et al. | 2013
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Fabrication of GaN nanodots via GaN thermal decomposition in H2 atmosphereHui, Xiong / Zhang, Jin / Li, Senlin et al. | 2013
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Universal three-dimensional nanofabrication for hard materialsYamazaki, Kenji / Yamaguchi, Hiroshi et al. | 2013
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Smooth MgO films grown on graphite and graphene by pulsed laser depositionStuart, Sean C. / Satchet, Edward / Sandin, Andreas et al. | 2013
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Fabrication of transferrable, fully suspended silicon photonic crystal nanomembranes exhibiting vivid structural color and high-Q guided resonanceLin, Chenxi / Martínez, Luis Javier / Povinelli, Michelle L. et al. | 2013
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Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor depositionPolyakov, Alexander Y. / Smirnov, N. B. / Kozhukhova, E. A. et al. | 2013
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Influence of porosity on dielectric breakdown of ultralow-k dielectricsVanstreels, Kris / Ciofi, Ivan / Barbarin, Yohan et al. | 2013
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Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmasBlanc, Romuald / Leverd, François / David, Thibaut et al. | 2013
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Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structureYan, Xin / Zhang, Xia / Li, Junshuai et al. | 2013
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Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistorsPark, Sungho / Park, Sekyoung / Ahn, Seung-Eon et al. | 2013
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Influence of the hydrogen implantation power density on ion cutting of GeRuan, Yujiao / Lin, Wang / Chen, Songyan et al. | 2013
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Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material systemChin, Matthew L. / Periasamy, Prakash / O'Regan, Terrance P. et al. | 2013
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Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN filmsSarney, Wendy L. / Svensson, Stefan P. et al. | 2013
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Stiction-free fabrication of lithographic nanostructures on resist-supported nanomechanical resonatorsDiao, Zhu / Losby, Joseph E. / Burgess, Jacob A. J. et al. | 2013
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Influence of Al/TiN/SiO2 structure on MOS capacitor, Schottky diode, and fin field effect transistors devicesLima, Lucas P. B. / Diniz, José A. / Radtke, Claudio et al. | 2013
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Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistorsKim, Hong-Yeol / Kim, Jihyun / Liu, Lu et al. | 2013
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Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized SiTurcotte-Tremblay, Pierre / Guihard, Matthieu / Gaudet, Simon et al. | 2013
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GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivationHwang, Ya-Hsi / Liu, Lu / Velez, Camilo et al. | 2013
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Erratum: “Resonant coupling for contactless measurement of carrier lifetime” [J. Vac. Sci. Technol. B 31, 04D113 (2013)]Ahrenkiel, Richard K. et al. | 2013
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Thermal pretreatment of sapphire substrates prior to ZnO buffer layer growthHuang, Shimin / Gu, Shulin / Zhu, Shunming et al. | 2013
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Ohmic contacts fabricated on moderately doped p-type GaAs by sputtering deposition and a laser-firing processBoronat, Alfredo / Silvestre, Santiago / Orpella, Albert et al. | 2013