Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1849
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Real-time material quality prediction, fault detection, and contamination control in AlGaN-GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensingCho, Soon et al. | 2005
- 1856
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Protein binding on thermally grown silicon dioxideLee, Stephen C. et al. | 2005
- 1866
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Silicon carbide based dielectric composites in bilayer sidewall barrier for Cu-porous ultralow-k interconnectsChen, Zhe et al. | 2005
- 1873
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Formation of vertical ridge structure in 660 nm laser diodes for high power single mode operationCho, Soohaeng et al. | 2005
- 1877
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As-doped polysilicon emitters with interfacial oxides and correlation to bipolar device characteristicsTilke, A.T. et al. | 2005
- 1883
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Thermal conductivity of B-C-N and BN nanotubesChang, C.W. et al. | 2005
- 1887
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Fabrication of identical sub-100 nm closely spaced parallel lines using electron beam lithographyChen, Ke et al. | 2005
- 1891
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Pt-coated InN nanorods for selective detection of hydrogen at room temperatureKryliouk, O. et al. | 2005
- 1895
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Electron beam lithography with negative Calixarene resists on dense materials: Taking advantage of proximity effects to increase pattern densityBühlmann, S. et al. | 2005
- 1901
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Effect of film thickness on the ferroelectric properties of Pb(Zr0.2Ti0.8)O3 thin films for nano-data storage applicationsLee, Woo-Sung et al. | 2005
- 1905
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Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si3N4 layerChen, S.Y. et al. | 2005
- 1909
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Temperature dependence of carrier dynamics for InAs-GaAs quantum dot infrared photodetectorsHuang, Chun-Yuan et al. | 2005
- 1913
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Towards a controlled patterning of 10 nm silicon gates in high density plasmasPargon, E. et al. | 2005
- 1924
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Silver coplanar waveguides as the passive components of choice for microwave integrated circuitsLevenets, Vladislav V. et al. | 2005
- 1929
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Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAsZimmerman, Jeramy D. et al. | 2005
- 1936
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Investigations on the mechanism of silicon etching with chlorine-trifluorideHöchst, Arnim et al. | 2005
- 1943
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Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistorCheng, Chin-Chuan et al. | 2005
- 1948
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Field-emission characteristics of boron-carbon-nitride nanofilmKimura, Chiharu et al. | 2005
- 1952
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Study of diffusion and quality control for CoSi2 formation by oxide-mediated cobalt silicidation with Ti cappingChang, Juin-Jie et al. | 2005
- 1956
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Influence of the growth temperature on the atomic distribution of TEOS deposited SiO2 filmsVamvakas, Vassilis Em et al. | 2005
- 1964
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Spindt tip composed of carbon nanotubesMoon, Jong Hyun et al. | 2005
- 1970
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Electrical and optical characteristics of hydrogen-plasma treated ZnO nanoneedlesYoo, Jinkyoung et al. | 2005
- 1975
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Density of electron-beam-induced amorphous carbon depositsNishio, Mitsumasa et al. | 2005
- 1980
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Surface-enhanced Raman spectroscopy of nanodiamond particles on silverPerevedentseva, E. et al. | 2005
- 1984
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Chemically assisted ion beam etching of GaAs by argon and chlorine gases: Experimental and simulation investigationsRhallabi, A. et al. | 2005
- 1992
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Microelectromechanical device for lateral force calibration in the atomic force microscope: Lateral electrical nanobalanceCumpson, Peter J. et al. | 2005
- 1998
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Synthesis, characterization, and investigation of a conformationally immobile calix(6)arene as a negative electron beam resistMonreal, Gabriel H. et al. | 2005
- 2003
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Lithographic characterization of the field dependent astigmatism and alignment stability of a 0.3 numerical aperture extreme ultraviolet microfield opticNaulleau, Patrick P. et al. | 2005
- 2007
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In situ chemical sensing in AlGaN-GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process controlCho, Soon et al. | 2005
- 2014
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Shutter transients during solid-source epitaxyHeyn, Ch et al. | 2005
- 2021
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Impurity redistribution due to recrystallization of preamorphized siliconDuffy, R. et al. | 2005
- 2030
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Determination of Mg composition in MgxZn1-xO alloy: Validity of Vegard's lawAshrafi, A.B.M.Almamun et al. | 2005
- 2034
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Thermal stability of trimethylsilylated mesoporous silica thin films as the ultralow-k dielectric for copper interconnectsChen, J.Y. et al. | 2005
- 2041
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Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP-InGaAsP high mesa waveguidesZhao, W. et al. | 2005
- 2046
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Reactive ion etching of a 20 nanometers tungsten gate using a SF6-N2 chemistry and hydrogen silsesquioxane hard mask resistLarrieu, Guilhem et al. | 2005
- 2051
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Nanopatterning of polyfluorene derivative using electron-beam lithographyDoi, Yusuke et al. | 2005
- 2056
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5OX50 mm pixel magnetic focus field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor targetEgami, N. et al. | 2005
- 2063
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Highly anisotropic gate electrode patterning in neutral beam etching using F2 gas chemistryNoda, Shuichi et al. | 2005
- 2069
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Effects of ambient gases on the direct growth of SiC nanowires by a simple heating methodRyu, Yonghwan et al. | 2005
- 2073
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Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25 nm silicon nanoimprint templatesOlynick, Deirdre L. et al. | 2005
- 2078
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Effect of film thickness and annealing temperature on the carbon induced interfacial charge of tetraethoxyorthosilicate based oxide films on p-type Si(100)Torres, Victor M. et al. | 2005
- 2084
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Prevention of Cu degradation using in situ N2 plasma treatment in a dual-damascene processTomohisa, Shingo et al. | 2005
- 2089
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Effect of Li0.5La0.5TiO3 solid electrolyte films on electrochemical properties of LiCoO2 thin film cathodes with different rapid-thermal annealing conditionsAhn, Jun-Ku et al. | 2005
- 2095
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Conformability and optical reflectance of Ti-Au film sputtered on the Si vertical sidewallsJo, Kyoung-Woo et al. | 2005
- 2102
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Simultaneous elastic and electromechanical imaging by scanning probe microscopy: Theory and applications to ferroelectric and biological materialsShin, J. et al. | 2005
- 2109
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Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above themChoy, Henry K.H. et al. | 2005
- 2114
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Physical properties of nanostructures grown by oblique angle depositionSingh, J.P. et al. | 2005
- 2122
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Growth of TiO2 nanorods by two-step thermal evaporationWu, Jyh-Ming et al. | 2005
- 2127
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Presence of nanosize Au dots on the formation of ohmic contact for the Ni-Au base film to p-GANYang, Jiin-Long et al. | 2005
- 2132
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Cap layer induced stress in InAs-(Al)GaAs quantum dotsChen, Shen-De et al. | 2005
- 2137
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Time dependence of wet oxidized AlGaAs-GaAs distributed Bragg reflectorsLi, R.Y. et al. | 2005
- 2141
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Synthesis and characterization of one-dimensional WO2 nanorodsMa, Yuan-Ron et al. | 2005
- 2146
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Influence of thermal budget on phosphosilicate glass prepared by high-density plasma chemical-vapor depositionHsiao, Wen-Chu et al. | 2005
- 2151
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Influence of process variables on electron beam chemical vapor deposition of platinumBeaulieu, D. et al. | 2005
- 2160
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Fundamental study of the removal mechanisms of nano-sized particles using brush scrubber cleaningXu, K. et al. | 2005
- 2176
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Errata - Erratum: "Effect of imprinting pressure on residual layer thickness in UV nano-imprint lithography" (J. Vac. Sci. Technol. B 23, 1102 (2005))Lee, Heon et al. | 2005
- 2179
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Preface| 2005
- 2180
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Fabrication and characterization of InGaAlP-InGaP semiconductor circular ring lasersShih, M.C. et al. | 2005
- 2184
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Three-dimensional thin-film-transistor silicon-oxide-nitride-oxide-silicon memory cell formed on large grain sized polysilicon films using nuclei induced solid phase crystallizationGu, S. et al. | 2005
- 2189
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Modified three terminal charge pumping technique applied to vertical transistor structuresPassmore, L.J. et al. | 2005
- 2194
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gatesShamiryan, Denis et al. | 2005
- 2198
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Minimizing plasma damage and in situ sealing of ultralow-k dielectric films by using oxygen free fluorocarbon plasmasMannaert, G. et al. | 2005
- 2203
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Effect of high-frequency variation on the etch characteristics of ArF photoresist and silicon nitride layers in dual frequency superimposed capacitively coupled plasmaKim, D.H. et al. | 2005
- 2212
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Modeling of radial uniformity at a wafer interface in a 2f-CCP for SiO2 etchingYagisawa, T. et al. | 2005
- 2218
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Modeling of the influence of dielectric target on interface sheath characteristics in a radio-frequency magnetron sputteringKuroiwa, Shunji et al. | 2005
- 2222
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Reduction of the initial defect density and improvement of the reliability of Cu-low-k structures by a methylating treatmentBorthakur, Swarnal et al. | 2005
- 2226
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Control of sidewall slope in silicon vias using SF6-O2 plasma etching in a conventional reactive ion etching toolFigueroa, R.F. et al. | 2005
- 2232
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Pressure dependent Parylene-N pore sealant penetration in porous low-k dielectricsJuneja, Jasbir S. et al. | 2005
- 2236
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Removal of chemical-mechanical polishing-induced damage layer in single crystal La3Ga5SiO14 by inductively coupled plasma etchingCho, Hyun et al. | 2005
- 2240
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Silicon interface trap characterization with elastic metal gate metrologyKraus, Philip A. et al. | 2005
- 2244
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectricsHung, P.Y. et al. | 2005
- 2249
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Papers from the 6th AVS International Conference on Microelectronics and Interfaces - Simultaneous optical measurement of Ge content and carbon doping in strained epitaxial SiGe filmsMorris, S. et al. | 2005
- 2254
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CUMULATIVE AUTHOR INDEX| 2005
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Letters - 120-nm-T-shaped-Mo-Pt-Au-gate AlGaN-GaN high electron mobility transistorsYamashita, Yoshimi et al. | 2005