Microelectronic engineering : an international journal of semiconductor manufacturing technology
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1519
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PrefaceRobertson, John / Hall, Steve et al. | 2009
- 1520
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Roadmap for 22nm and beyond (Invited Paper)Iwai, H. et al. | 2009
- 1520
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Roadmap for 22 nm and beyondIwai, H. et al. | 2009
- 1529
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Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)Caymax, Matty / Brammertz, Guy / Delabie, Annelies et al. | 2009
- 1536
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Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)McIntyre, Paul C. / Oshima, Yasuhiro / Kim, Eunji et al. | 2009
- 1540
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Challenges of integration of high-k dielectric with III-V materials (Invited Paper)Tsai, W. / Goel, N. / Koveshnikov, S. et al. | 2009
- 1540
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Challenges of integration of high-κ dielectric with III–V materials (Invited Paper)Tsai, W. / Goel, N. / Koveshnikov, S. et al. | 2009
- 1544
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Surface passivation and implications on high mobility channel performance (Invited Paper)Hinkle, C.L. / Milojevic, M. / Vogel, E.M. et al. | 2009
- 1550
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Band offsets at interfaces of (100)InxGa1−xAs (0x0.53) with Al2O3 and HfO2Afanas’ev, V.V. / Stesmans, A. / Brammertz, G. et al. | 2009
- 1550
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Band offsets at interfaces of (100)InxGa1-xAs (0 less-than, equal or similar x less-than, equal or similar 0.53) with Al2O3 and HfO2Afanasev, V.V. / Stesmans, A. / Brammertz, G. et al. | 2009
- 1554
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Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulatorLin, Han-Chung / Wang, Wei-E. / Brammertz, Guy et al. | 2009
- 1558
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Interface states model for III–V oxide interfacesRobertson, J. et al. | 2009
- 1561
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Deposition of HfO2 on InAs by atomic-layer depositionWheeler, D. / Wernersson, L.-E. / Fröberg, L. et al. | 2009
- 1564
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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETsAyubi-Moak, J. / Benbakhti, B. / Kalna, K. et al. | 2009
- 1568
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A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devicesLongo, P. / Paterson, G.W. / Holland, M.C. et al. | 2009
- 1571
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Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)Toriumi, Akira / Tabata, Toshiyuki / Hyun Lee, Choong et al. | 2009
- 1577
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Germanium surface and interfaces (Invited Paper)Dimoulas, A. / Tsipas, P. et al. | 2009
- 1577
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Germanium surface and interfacesDimoulas, A. / Tsipas, P. et al. | 2009
- 1582
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Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETsKaczer, B. / Franco, J. / Mitard, J. et al. | 2009
- 1585
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Improved GeOI substrates for pMOSFET off-state leakage controlRomanjek, K. / Augendre, E. / Van Den Daele, W. et al. | 2009
- 1589
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Atomistic model structure of the Ge(100)–GeO2 interfaceBroqvist, Peter / Binder, Jan Felix / Pasquarello, Alfredo et al. | 2009
- 1592
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Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOSMerckling, C. / Penaud, J. / Kohen, D. et al. | 2009
- 1596
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A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectricLi, C.X. / Wang, C.D. / Leung, C.H. et al. | 2009
- 1599
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Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinningLi, X.V. / Husain, M.K. / Kiziroglou, M. et al. | 2009
- 1603
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Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)Frank, Martin M. / Kim, SangBum / Brown, Stephen L. et al. | 2009
- 1603
-
Scaling the MOSFET gate dielectric: from high-k to higher-k?Frank, M.M. / Kim, SangBum / Brown, S.L. et al. | 2009
- 1609
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Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)Garros, X. / Casse, M. / Reimbold, G. et al. | 2009
- 1615
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Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)Schroeder, T. / Giussani, A. / Muessig, H.-J. et al. | 2009
- 1621
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Paramagnetic Ge dangling bond type defects at (100)Si1−xGex/SiO2 interfaces (Invited Paper)Stesmans, A. / Somers, P. / Afanas’ev, V.V. et al. | 2009
- 1621
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Paramagnetic Ge dangling bond type defects at (100)Si1-xGex/SiO2 interfacesStesmans, A. / Somers, P. / Afanasev, V.V. et al. | 2009
- 1626
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Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germaniumTsoutsou, D. / Apostolopoulos, G. / Galata, S. et al. | 2009
- 1629
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Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFETKawanago, T. / Song, J. / Kakushima, K. et al. | 2009
- 1632
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Interfacial layer optimization of high-k/metal gate stacks for low temperature processingLinder, Barry P. / Narayanan, Vijay / Cartier, Eduard A. et al. | 2009
- 1635
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Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devicesAndersson, C. / Rossel, C. / Sousa, M. et al. | 2009
- 1638
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Post metallization annealing study in La2O3/Ge MOS structureSong, J. / Kakushima, K. / Ahmet, P. et al. | 2009
- 1642
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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectricsGottlob, H.D.B. / Schmidt, M. / Stefani, A. et al. | 2009
- 1646
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Amorphous ternary rare-earth gate oxides for future integration in MOSFETsLopes, J.M.J. / Durğun Özben, E. / Roeckerath, M. et al. | 2009
- 1650
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Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(100)Ohta, Akio / Kanme, Daisuke / Murakami, Hideki et al. | 2009
- 1654
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Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectricsGundogdu, K. / Lucovsky, G. / Chung, K.-B. et al. | 2009
- 1658
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Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozoneLee, B. / Park, T.J. / Hande, A. et al. | 2009
- 1662
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“Higher-κ” dielectrics for advanced silicon microelectronic devices: A combinatorial research studyGreen, M.L. / Schenck, P.K. / Chang, K.-S. et al. | 2009
- 1662
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"Higher-k" dielectrics for advanced silicon microelectronic devices: A combinatorial research studyGreen, M. L. / Schenck, P. K. / Chang, K. S. et al. | 2009
- 1665
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Accurate electron mobility extraction in nMOSFETs by RF split CVHyvert, G. / Calmon, F. / Nguyen, T. et al. | 2009
- 1668
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Oxygen vacancy levels and interfaces of Al2O3Liu, D. / Robertson, J. et al. | 2009
- 1672
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Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3Xiong, Ka / Robertson, John et al. | 2009
- 1676
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Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopyLucovsky, G. / Chung, K.-B. / Kim, J.-W. et al. | 2009
- 1680
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Atomistic origin of high-quality “novel SiON gate dielectrics”Yamaguchi, Keita / Otake, Akira / Kobayashi, Kenji et al. | 2009
- 1683
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Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETsSchmidt, M. / Stefani, A. / Gottlob, H.D.B. et al. | 2009
- 1686
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Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerfacePelloquin, S. / Becerra, L. / Saint-Girons, G. et al. | 2009
- 1689
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Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursorsDueñas, Salvador / Castán, Helena / García, Héctor et al. | 2009
- 1692
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Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applicationsLiu, Chien-Wei / Cheng, Chin-Lung / Chang-Liao, Kuei-Shu et al. | 2009
- 1696
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Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100)Congedo, G. / Spiga, S. / Lamagna, L. et al. | 2009
- 1700
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Growth temperature dependence of epitaxial Gd2O3 films on Si(111)Niu, G. / Vilquin, B. / Baboux, N. et al. | 2009
- 1703
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Experimental evidence of suppression on oxygen vacancy formation in Hf based high-k gate dielectrics with La incorporationLu, C. C. / Chang-Liao, K. S. / Cheng, Y. F. et al. | 2009
- 1703
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Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporationLu, Chun-Chang / Chang-Liao, Kuei-Shu / Cheng, Yu-Fen et al. | 2009
- 1707
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Net negative charge in low-temperature SiO2 gate dielectric layersBoogaard, A. / Kovalgin, A.Y. / Wolters, R.A.M. et al. | 2009
- 1711
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Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfacesCasey, P. / O’Connor, E. / Long, R. et al. | 2009
- 1715
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Degradation dynamics and breakdown of MgO gate oxidesMiranda, E. / O’Connor, E. / Hughes, G. et al. | 2009
- 1718
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Stability and Schottky barrier of silicides: First-principles studyNakayama, T. / Sotome, S. / Shinji, S. et al. | 2009
- 1722
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The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)Tseng, Hsing-Huang / Kirsch, Paul / Park, C.S. et al. | 2009
- 1728
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Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)Chin, Albert / Chang, M.F. / Lin, S.H. et al. | 2009
- 1728
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Flat band voltage control on low Vt metal-gate/high-k CMOSFETs with small EOT (Invited Paper)Chin, A. / Chang, M. F. / Lin, S. H. et al. | 2009
- 1733
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Theoretical models for work function controlShiraishi, K. et al. | 2009
- 1733
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Theoretical models for work function control (Invited Paper)Shiraishi, Kenji et al. | 2009
- 1737
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Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodesChoi, Changhwan / Ando, Takashi / Cartier, Eduard et al. | 2009
- 1740
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Tuning the dipole at the High-k/SiO2 interface in advanced metal gate stacksCharbonnier, M. / Leroux, C. / Cosnier, V. et al. | 2009
- 1740
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Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacksCharbonnier, M. / Leroux, C. / Cosnier, V. et al. | 2009
- 1743
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Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layersLin, L. / Robertson, J. et al. | 2009
- 1747
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A first-principles study of the structural and electronic properties of III–V/thermal oxide interfacesScarrozza, M. / Pourtois, G. / Houssa, M. et al. | 2009
- 1751
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Electronic properties of defects in polycrystalline dielectric materialsMcKenna, K.P. / Shluger, A.L. et al. | 2009
- 1756
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Point defects in Al2O3 and their impact on gate stacksWeber, J.R. / Janotti, A. / Van de Walle, C.G. et al. | 2009
- 1760
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First principles study of substoichiometric germanium oxidesBinder, Jan Felix / Broqvist, Peter / Pasquarello, Alfredo et al. | 2009
- 1763
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Modeling complexity of a complex gate oxideDemkov, Alexander A. / Sharia, O. / Luo, X. et al. | 2009
- 1767
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Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stackSamanta, Piyas / Cheng, Chin-Lung / Lee, Yao-Jen et al. | 2009
- 1771
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Compositional dependence of work function and Fermi level position of the HfNx/SiO2 systemRothschild, J.A. / Eizenberg, M. et al. | 2009
- 1774
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High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacanciesVallée, C. / Gonon, P. / Jorel, C. et al. | 2009
- 1774
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High kappa for MIM and RRAM applications: impact of the metallic electrode and oxygen vacanciesVallee, C. / Gonon, P. / Jorel, C. et al. | 2009
- 1774
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High k for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacanciesVallee, C. / Gonon, P. / Jorel, C. et al. | 2009
- 1777
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Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPSZenkevich, Andrei / Lebedinskii, Yuri / Matveyev, Yuri et al. | 2009
- 1780
-
Stability of Si impurity in high-κ oxidesUmezawa, Naoto / Shiraishi, Kenji / Chikyow, Toyohiro et al. | 2009
- 1780
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Stability of Si impurity in high-k oxidesUmezawa, N. / Shiraishi, K. / Chikyow, T. et al. | 2009
- 1782
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Lanthanum implantation for threshold voltage control in metal/high-k devicesFet, A. / Häublein, V. / Bauer, A.J. et al. | 2009
- 1786
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Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structureCheng, Weitao / Teramoto, Akinobu / Ohmi, Tadahiro et al. | 2009
- 1789
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High-k dielectrics for future generation memory devices (Invited Paper)Kittl, J.A. / Opsomer, K. / Popovici, M. et al. | 2009
- 1789
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High-k dielectrics for future generation memory devicesKittl, J.A. / Opsomer, K. / Popovici, M. et al. | 2009
- 1796
-
Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)Molas, G. / Bocquet, M. / Vianello, E. et al. | 2009
- 1804
-
Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injectionChang, Man / Kim, Tae-Wook / Lee, Joonmyoung et al. | 2009
- 1807
-
Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memoryGovoreanu, B. / Degraeve, R. / Zahid, M.B. et al. | 2009
- 1812
-
Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory applicationJung, Seungjae / Chang, Man / Kim, Seonghyun et al. | 2009
- 1815
-
Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layersManger, D. / Kaczer, B. / Menou, N. et al. | 2009
- 1818
-
Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 additionMüller, J. / Böscke, T.S. / Schröder, U. et al. | 2009
- 1822
-
Cycling degradation in TANOS stackGhidini, G. / Scozzari, C. / Galbiati, N. et al. | 2009
- 1826
-
Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 filmsWeinreich, W. / Reiche, R. / Lemberger, M. et al. | 2009
- 1830
-
Program efficiency and high temperature retention of SiN/high-K based memoriesVianello, E. / Bocquet, M. / Driussi, F. et al. | 2009
- 1834
-
Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cellsZheng, X.F. / Zhang, W.D. / Govoreanu, B. et al. | 2009
- 1838
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Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applicationsDimitrakis, P. / Mouti, A. / Bonafos, C. et al. | 2009
- 1842
-
Hf- and Zr-based alkaline earth perovskite dielectrics for memory applicationsŁupina, G. / Seifarth, O. / Kozłowski, G. et al. | 2009
- 1845
-
Electrical characterization of metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor capacitors for nonvolatile memory applicationsJuan, Pi-chun / Wang, Chen-Hao et al. | 2009
- 1849
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Theoretical studies on the charge trap mechanism of MONOS type memories – Relationship between atomistic information and program/erase actionsOtake, Akira / Yamaguchi, Keita / Kobayashi, Kenji et al. | 2009
- 1852
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Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantationLiu, Li-Jung / Chang-Liao, Kuei-Shu / Wu, Tai-Yu et al. | 2009
- 1856
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Three-dimensional modeling of the tunneling potential in MOS memories embedded with metal nanoparticlesBeniakar, M. / Kladas, A. / Xanthakis, J.P. et al. | 2009
- 1859
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Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopyBeyer, R. / von Borany, J. / Burghardt, H. et al. | 2009
- 1863
-
A novel SONOS-type flash device with stacked charge trapping layerYe, Zong-Hao / Chang-Liao, Kuei-Shu / Liu, Te-Chiang et al. | 2009
- 1866
-
Electronic structure of memory traps in silicon nitrideGritsenko, V.A. / Nekrashevich, S.S. / Vasilev, V.V. et al. | 2009
- 1870
-
Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)Ielmini, Daniele et al. | 2009
- 1876
-
Understanding negative bias temperature instability in the context of hole trapping (Invited Paper)Grasser, T. / Kaczer, B. / Goes, W. et al. | 2009
- 1876
-
Understanding negative bias temperature instability in the context of hole trappingGrasser, T. / Kaczer, B. / Goes, W. et al. | 2009
- 1883
-
Defects and instabilities in Hf-dielectric/SiON stacks (Invited Paper)Zhang, J.F. et al. | 2009
- 1883
-
Defects and instabilities in Hf-dielectric/SiON stacksZhang, J.F. et al. | 2009
- 1888
-
Recovery study of negative bias temperature instabilityWang, Miaomiao / Zafar, Sufi / Stathis, James H. et al. | 2009
- 1891
-
The evolution of optical and electrical properties of low-k dielectrics under bias stressAtkin, J.M. / Cartier, E. / Shaw, T.M. et al. | 2009
- 1894
-
Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metalsKaczer, B. / Veloso, A. / Aoulaiche, M. et al. | 2009
- 1897
-
Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offsetRochette, F. / Garros, X. / Reimbold, G. et al. | 2009
- 1901
-
Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4Nakasaki, Yasushi / Hirano, Izumi / Kato, Koichi et al. | 2009
- 1905
-
Estimate of dielectric density using spectroscopic ellipsometryDavey, W. / Buiu, O. / Werner, M. et al. | 2009
- 1908
-
Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacksAmat, E. / Rodríguez, R. / Nafría, M. et al. | 2009
- 1911
-
Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscaleYanev, V. / Erlbacher, T. / Rommel, M. et al. | 2009
- 1915
-
Electronic structure of bulk and defect α- and γ-Al2O3Perevalov, T.V. / Shaposhnikov, A.V. / Gritsenko, V.A. et al. | 2009
- 1915
-
Electronic structure of bulk and defect a- and g-Al2O3Perevalov, T. V. / Shaposhnikov, A. V. / Gritsenko, V. A. et al. | 2009
- 1918
-
Wide band (0.05–40GHz) characterization and signal propagation in Cu–porous MSQ interconnectsWong, T.K.S. / Kumar, R. / Rustagi, S.C. et al. | 2009
- 1921
-
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devicesLanza, M. / Porti, M. / Nafria, M. et al. | 2009
- 1925
-
Resistive non-volatile memory devices (Invited Paper)Waser, Rainer et al. | 2009
- 1929
-
Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applicationsYoon, Jaesik / Lee, Joonmyoung / Choi, Hyejung et al. | 2009
- 1933
-
The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applicationsLee, Joonmyoung / Choi, Hyejung / Seong, Dong-jun et al. | 2009
- 1936
-
Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric responseClima, S. / Pourtois, G. / Menou, N. et al. | 2009
- 1939
-
Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)Matsumoto, T. / Asuha / Kim, W.-B. et al. | 2009
- 1942
-
Unified mechanisms for structural relaxation and crystallization in phase-change memory devicesIelmini, D. / Boniardi, M. / Lacaita, A.L. et al. | 2009
- 1946
-
Atomic layer deposition of Ge2Sb2Te5 thin filmsRitala, Mikko / Pore, Viljami / Hatanpää, Timo et al. | 2009
- 1950
-
Phase change and electrical characteristics of Ge–Se–Te alloysLee, Eui-Bok / Ju, Byeong-Kwon / Kim, Yong-Tae et al. | 2009
- 1954
-
Electroluminescence, charge trapping and quenching in Eu implantes SiO2–Si structuresTyagulskiy, S. / Tyagulskyy, I. / Nazarov, A. et al. | 2009
- 1957
-
Silicon nanowire NVM with high-k gate dielectric stackZhu, Xiaoxiao et al. | 2009