Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
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Effect of BCl3 in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applicationsEkinci, Huseyin / Kuryatkov, Vladimir V. / Mauch, Daniel L. et al. | 2014
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Optical system for a multiple-beam scanning electron microscopeEnyama, Momoyo / Sakakibara, Makoto / Tanimoto, Sayaka et al. | 2014
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Feature scale modeling of pulsed plasma-enhanced chemical vapor depositionKelkar, Sanket S. / Wolden, Colin A. et al. | 2014
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Doped semiconductors with band-edge plasma frequenciesLaw, Stephanie / Liu, Runyu / Wasserman, Daniel et al. | 2014
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Tunable electrical properties of TaNx thin films grown by ionized physical vapor depositionChoi, Miri / Dubourdieu, Catherine / Kellock, Andrew J. et al. | 2014
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Atomic layer deposited passivation layers for superlattice photodetectorsSalihoglu, Omer et al. | 2014
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Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectorsGhadi, Hemant / Agarwal, Akshay / Adhikary, Sourav et al. | 2014
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Dynamic control of local field emission current from carbon nanowallsWang, Ying / Yang, Yumeng / Wu, Yihong et al. | 2014
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Field enhancement for fiber emitters in linear and rectangular arraysTang, Wilkin / Shiffler, Don / Golby, Ken et al. | 2014
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Erratum: “Semipolar () GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]Sawicka, Marta / Muziol, Grzegorz / Turski, Henryk et al. | 2014
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Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical propertiesMadisetti, Shailesh / Tokranov, Vadim / Greene, Andrew et al. | 2014
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High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistorsHwang, Ya-Hsi / Ahn, Shihyun / Dong, Chen et al. | 2014
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Structural defects responsible for excessive leakage current in Schottky diodes prepared on undoped n-GaN films grown by hydride vapor phase epitaxyPolyakov, Alexander Y. / Yakimov, Eugene B. / Smirnov, Nikolai B. et al. | 2014
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Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumpsWang, Yujin / Zhu, Chuanrui / Shen, Yan et al. | 2014
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Influence of oxygen precursors and annealing on Fe3O4 films grown on GaN templates by metal organic chemical vapor depositionHuang, Shimin / Gu, Shulin / Tang, Kun et al. | 2014
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Optical conductivity of Ni1−xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometryAbdallah, Lina S. / Zollner, Stefan / Lavoie, Christian et al. | 2014
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Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistorsMemišević, Elvedin / Lind, Erik / Wernersson, Lars-Erik et al. | 2014
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Development of gasbag-assisted ultraviolet-based imprinting process for replication of microstructures onto cylindrical surfaceLin, Cheng-Hui / Hong, Rong-Hong / Li, Tsui-Hua et al. | 2014
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Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealingLiu, Lu / Xi, Yuyin / Ahn, Shihyun et al. | 2014
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Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor depositionYu, Hung-Wei / Wang, Tsun-Ming / Nguyen, Hong-Quan et al. | 2014
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Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctionsLee, In-Hwan / Polyakov, Alexander Y. / Smirnov, Nikolai B. et al. | 2014
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Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomographyLiu, Fang / Huang, Li / Davis, Robert F. et al. | 2014
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Simple colloidal lithography method to fabricate large-area moth-eye antireflective structures on Si, Ge, and GaAs for IR applicationsLora Gonzalez, Federico / Chan, Lesley / Berry, Alex et al. | 2014
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Density-tunable non–close-packed monolayer of silica nanospheres prepared by single-step freeze-dryingFeng, Cong / Choi, Hoi Wai et al. | 2014
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Large area infrared frequency selective surface with dimensions reproducible by optical lithographyD' Archangel, Jeffrey A. / Shelton, David J. / Hudgins, Robert et al. | 2014
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Fabrication and characterization of aluminum-molybdenum nanocomposite membranesvan den Hurk, Remko / Nelson-Fitzpatrick, Nathan / Evoy, Stephane et al. | 2014
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Errata: “Role of molybdenum oxide for organic electronics: Surface analytical studies” [J. Vac. Sci. Technol., B 32, 040801 (2014)]Wang, Chenggong / Irfan, Irfan / Liu, Xiaoliang et al. | 2014
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Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistorsAnderson, Travis / Koehler, Andrew / Hwang, Ya-Hsi et al. | 2014
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Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor depositionHe, Xiaoguang / Zhao, Degang / Jiang, Desheng et al. | 2014
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Tunable daughter molds from a single Si master grating moldKundu, Shreya / Lim, Su Hui / Ganesan, Ramakrishnan et al. | 2014
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Characterization of Ni thin films following thermal oxidation in airDe Los Santos Valladares, Luis / Ionescu, Adrian / Holmes, Stuart et al. | 2014
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Development of plasma etching processes to pattern sub-15 nm features with PS-b-PMMA block copolymer masks: Application to advanced CMOS technologyDelalande, Michaël / Cunge, Gilles / Chevolleau, Thierry et al. | 2014
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Temperature gradient approach to grow large, preferentially oriented 6,13-bis(triisopropylsilylethynyl) pentacene crystals for organic thin film transistorsAsare-Yeboah, Kyeiwaa / Frazier, Rachel M. / Szulczewski, Greg et al. | 2014