IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1789
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Table of contents| 2008
- 1793
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Tutor at Your Web-StepJindal, R. P. et al. | 2008
- 1793
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EDITORIALS - Tutor at Your Web-StepJindal, R.P. et al. | 2008
- 1794
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EditorialVerret, Doug et al. | 2008
- 1795
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Special Issue on Silicon Carbide Devices and TechnologyZhao, Jian H. / Pensl, Gerhard / Kimoto, Tsunenobu et al. | 2008
- 1795
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FOREWORD - Special Issue on Silicon Carbide Devices and TechnologyZhao, J.H. et al. | 2008
- 1798
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Characterization, Modeling, and Application of 10-kV SiC MOSFETJun Wang, / Tiefu Zhao, / Jun Li, et al. | 2008
- 1798
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SPECIAL ISSUE PAPERS - Characterization, Modeling, and Application of 10-kV SiC MOSFETWang, J. et al. | 2008
- 1807
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A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of TemperatureHowell, R.S. / Buchoff, S. / Van Campen, S. et al. | 2008
- 1816
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Comparisons of Design and Yield for Large-Area 10-kV 4H-SiC DMOSFETsHowell, R.S. / Buchoff, S. / Van Campen, S. et al. | 2008
- 1824
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DC and Transient Performance of 4H-SiC Double-Implant MOSFETsLosee, P.A. / Matocha, K. / Arthur, S.D. et al. | 2008
- 1830
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Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETsMatocha, K. / Dunne, G. / Soloviev, S. et al. | 2008
- 1835
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Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability MeasurementsLelis, A.J. / Habersat, D. / Green, R. et al. | 2008
- 1841
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Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN DiodesHiyoshi, T. / Hori, T. / Suda, J. et al. | 2008
- 1847
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Bipolar Conduction Impact on Electrical Characteristics and Reliability of 1.2- and 3.5-kV 4H-SiC JBS DiodesBrosselard, Pierre / Camara, Nicolas / Banu, Viorel et al. | 2008
- 1857
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Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) RectifiersLin Zhu, / Chow, T.P. et al. | 2008
- 1864
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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky RectifiersHull, B.A. / Sumakeris, J.J. / O'Loughlin, M.J. et al. | 2008
- 1871
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Advanced High-Voltage 4H-SiC Schottky RectifiersLin Zhu, / Chow, T.P. et al. | 2008
- 1875
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Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETsNilsson, P.-A. / Allerstam, F. / Sudow, M. et al. | 2008
- 1880
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1.88-mO . cm2 1650-V Normally on 4H-SiC TI-VJFETLi, Y. et al. | 2008
- 1880
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1.88-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFETYuzhu Li, / Alexandrov, P. / Zhao, J.H. et al. | 2008
- 1880
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1.88- Formula Not Shown 1650-V Normally on 4H-SiC TI-VJFETLi, Y. / Alexandrov, P. / Zhao, J.H. et al. | 2008
- 1887
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Theoretical and Experimental Analyses of Safe Operating Area (SOA) of 1200-V 4H-SiC BJTYan Gao, / Huang, A.Q. / Agarwal, A.K. et al. | 2008
- 1894
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High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTEHyung-Seok Lee, / Domeij, M. / Ghandi, R. et al. | 2008
- 1899
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Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction TransistorsJianhui Zhang, / Xueqing Li, / Alexandrov, P. et al. | 2008
- 1907
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Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact ImplantationHyung-Seok Lee, / Domeij, M. / Zetterling, C.-M. et al. | 2008
- 1912
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Design and Characterization of High-Voltage 4H-SiC p-IGBTsQingchun Zhang, / Jun Wang, / Jonas, C. et al. | 2008
- 1920
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Optimization of on-State and Switching Performances for 15–20-kV 4H-SiC IGBTsTamaki, T. / Walden, G.G. / Yang Sui, et al. | 2008
- 1928
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Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTsTamaki, T. / Walden, G.G. / Yang Sui, et al. | 2008
- 1934
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Development of 4H-SiC LJFET-Based Power ICYongxi Zhang, / Kuang Sheng, / Ming Su, et al. | 2008
- 1946
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Demonstration and Characterization of Bipolar Monolithic Integrated Circuits in 4H-SiCJeong-Youb Lee, / Singh, S. / Cooper, J.A. et al. | 2008
- 1954
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Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)Nishio, J. / Ota, C. / Hatakeyama, T. et al. | 2008
- 1961
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Modeling and Optimal Device Design for 4H-SiC Super-Junction DevicesLiangchun Yu, / Kuang Sheng, et al. | 2008
- 1970
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3C-Silicon Carbide Nanowire FET: An Experimental and Theoretical ApproachRogdakis, K. / Seoung-Yong Lee, / Bescond, M. et al. | 2008
- 1977
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4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nmJun Hu, / Xiaobin Xin, / Xueqing Li, et al. | 2008
- 1984
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Impact Ionization Coefficients in 4H-SiCLoh, W.S. / Ng, B.K. / Ng, J.S. et al. | 2008
- 1991
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Monte Carlo Simulation of Ion Implantation in Crystalline SiC With Arbitrary PolytypesShiyang Tian, et al. | 2008
- 1997
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Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through SiO2 Layers Into 4H-SiCMochizuki, K. et al. | 2008
- 1997
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Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through Formula Not Shown Layers Into 4H-SiCMochizuki, K. / Someya, T. / Takahama, T. et al. | 2008
- 1997
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Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through $\hbox{SiO}_{2}$ Layers Into 4H-SiCMochizuki, K. / Someya, T. / Takahama, T. et al. | 2008
- 2004
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Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast Formula Not Shown - Formula Not Shown TechniquesGurfinkel, M. / Xiong, H.D. / Cheung, K.P. et al. | 2008
- 2004
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Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ TechniquesGurfinkel, M. / Xiong, H.D. / Cheung, K.P. et al. | 2008
- 2013
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Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETsOkamoto, D. / Yano, H. / Hatayama, T. et al. | 2008
- 2021
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Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETsPoggi, A. / Moscatelli, F. / Solmi, S. et al. | 2008
- 2029
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A Physical Model of High Temperature 4H-SiC MOSFETsPotbhare, S. / Goldsman, N. / Lelis, A. et al. | 2008
- 2041
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Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiCHatayama, T. / Hino, S. / Miura, N. et al. | 2008
- 2041
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Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial SiO2 Layer Between Al2O3 and SiCHatayama, T. et al. | 2008
- 2041
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Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial Formula Not Shown Layer Between Formula Not Shown and SiCHatayama, T. / Hino, S. / Miura, N. et al. | 2008
- 2046
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The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled DiodesWang, Y. / Tang, K. / Khan, T. et al. | 2008
- 2054
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4H-SiC MIS Capacitors and MISFETs With Deposited $\hbox{SiN}_{x}/ \hbox{SiO}_{2}$ Stack-Gate StructuresNoborio, M. / Suda, J. / Kimoto, T. et al. | 2008
- 2054
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4H-SiC MIS Capacitors and MTSFETs With Deposited SiNx-SiO2 Stack-Gate StructuresNoborio, M. et al. | 2008
- 2054
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4H-SiC MIS Capacitors and MISFETs With Deposited Formula Not Shown Stack-Gate StructuresNoborio, M. / Suda, J. / Kimoto, T. et al. | 2008
- 2061
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Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETsPotbhare, S. / Goldsman, N. / Akturk, A. et al. | 2008
- 2071
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REGULAR ISSUE PAPERS - Compound Semiconductor Devices - Program-Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile MemoryYin, H. et al. | 2008
- 2071
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Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile MemoryHuaxiang Yin, / Sunil Kim, / Hyuck Lim, et al. | 2008
- 2078
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Epitaxial Graphene Transistors on SiC SubstratesKedzierski, J. / Pei-Lan Hsu, / Healey, P. et al. | 2008
- 2086
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Nanoelectronics - Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport EquationLenzi, M. et al. | 2008
- 2086
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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport EquationLenzi, M. / Palestri, P. / Gnani, E. et al. | 2008
- 2097
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Expression of Concern: On the Optimal Design, Performance, and Reliability of Future Carbon Nanotube-Based Interconnect SolutionsNieuwoudt, Arthur / Massoud, Yehia et al. | 2008
- 2097
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On the Optimal Design, Performance, and Reliability of Future Carbon Nanotube-Based Interconnect SolutionsNieuwoudt, A. et al. | 2008
- 2111
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Optoelectronics, Displays, and Imaging - CCD Charge Injection Structure at Very Small Signal LevelsPrigozhin, G. et al. | 2008
- 2111
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CCD Charge Injection Structure at Very Small Signal LevelsPrigozhin, G. / Burke, B. / Bautz, M. et al. | 2008
- 2121
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Two-Transistor Active Pixel Sensor Readout Circuits in Amorphous Silicon Technology for High-Resolution Digital Imaging ApplicationsTaghibakhsh, F. / Karim, K.S. et al. | 2008
- 2129
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Silicon Devices - Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain SizeYang, P.-C. et al. | 2008
- 2129
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Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain SizePo-Chuan Yang, / Ping-Sheng Kuo, / Si-Chen Lee, et al. | 2008
- 2134
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Simulation of the Impact of Process Variation on the Optimized 10-nm FinFETKhan, H.R. / Mamaluy, D. / Vasileska, D. et al. | 2008
- 2142
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Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF ApplicationsJing Zhuge, / Runsheng Wang, / Ru Huang, et al. | 2008
- 2148
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A Quasi Two-Dimensional Conduction Model for Polycrystalline Silicon Thin-Film Transistor Based on Discrete GrainsMan Wong, / Chow, T. / Chun Cheong Wong, et al. | 2008
- 2157
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A Unified Analytic Drain–Current Model for Multiple-Gate MOSFETsBo Yu, / Jooyoung Song, / Yu Yuan, et al. | 2008
- 2164
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Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in p+-n--n+ DiodesBaburske, R. et al. | 2008
- 2164
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Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in $\hbox{p}^{+}$-$\hbox{n}^{-}$ - $\hbox{n}^{+}$ DiodesBaburske, R. / Heinze, B. / Lutz, J. et al. | 2008
- 2164
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Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in Formula Not Shown - Formula Not Shown - Formula Not Shown DiodesBaburske, R. / Heinze, B. / Lutz, J. et al. | 2008
- 2173
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Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETsHariharan, V. / Vasi, J. / Rao, V.R. et al. | 2008
- 2181
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A Polycrystalline Silicon Thin-Film Transistor With Self-Aligned Metal Electrodes Formed Using Aluminum-Induced CrystallizationDongli Zhang, / Chow, T. / Man Wong, et al. | 2008
- 2187
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A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped BodyFeng Liu, / Jin He, / Lining Zhang, et al. | 2008
- 2195
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Uncertainty Analysis of Two-Step and Three-Step Methods for Deembedding On-Wafer RF Transistor MeasurementsJunyoung Cha, / Jiyong Cha, / Seonghearn Lee, et al. | 2008
- 2202
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A Novel Trapping-Nitride-Storage Non-Volatile Memory Cell Using a Gated-Diode Structure With an Ultra-Thin Dielectric Dopant Diffusion BarrierWen-Jer Tsai, / Tien-Fan Ou, / Hsuan-Ling Kao, et al. | 2008
- 2212
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Uniform Square Polycrystalline Silicon Fabricated by Employing Periodic Metallic Pads and SiON Absorption Layer for Thin Film TransistorsPo-Chuan Yang, / Chun-Yuan Hsueh, / Chieh-Hung Yang, et al. | 2008
- 2218
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A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method—Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type DevicesHang-Ting Lue, / Pei-Ying Du, / Szu-Yu Wang, et al. | 2008
- 2218
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Solid-State Device Phenomena - A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method -- Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type DevicesLue, H.-T. et al. | 2008
- 2229
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A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type DevicesPei-Ying Du, / Hang-Ting Lue, / Szu-Yu Wang, et al. | 2008
- 2238
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Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based DielectricsJian-Jun Yang, / Xin-Peng Wang, / Chun-Xiang Zhu, et al. | 2008
- 2246
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Solid-State Power and High Voltage - Optimization of the Porous-Silicon-Based Superjunction Power MOSFETYe, H. et al. | 2008
- 2246
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Optimization of the Porous-Silicon-Based Superjunction Power MOSFETHua Ye, / Haldar, P. et al. | 2008
- 2252
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An Analytical Model to Evaluate the Radiated Power Spectrum of a Multipactor Discharge in a Parallel-Plate RegionSorolla, E. / Anza, S. / Gimeno, B. et al. | 2008
- 2252
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Vacuum Electron Devices - An Analytical Model to Evaluate the Radiated Power Spectrum of a Multipactor Discharge in a Parallel-Plate RegionSorolla, E. et al. | 2008
- 2259
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BRIEFS - Mechanism and Improvement of On-Resistance Degradation Induced by Avalanche Breakdown in Lateral DMOS TransistorsChen, J.F. et al. | 2008
- 2259
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Mechanism and Improvement of On-Resistance Degradation Induced by Avalanche Breakdown in Lateral DMOS TransistorsChen, J.F. / Lee, J.R. / Kuo-Ming Wu, et al. | 2008
- 2263
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Efficient Calculation Algorithm for One-Dimensional Ion Implantation Profiles With High Tilt AnglesSuzuki, K. / Kojima, S. et al. | 2008
- 2268
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Impact of Lateral Asymmetry of MOSFETs on the Gate–Drain Noise CorrelationRoy, A.S. / Enz, C.C. / Tao Chuan Lim, et al. | 2008
- 2273
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Atomic Vapor Deposition of Strontium Tantalate Films for MIM ApplicationsLukosius, M. / Wenger, C. / Pasko, S. et al. | 2008
- 2278
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Effect of Thermal Strain in Helical Slow-Wave Circuit on TWT Cold-Test CharacteristicsShengmei Yan, / Lieming Yao, / Zhonghai Yang, et al. | 2008
- 2282
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ANNOUNCEMENTS - Call for Papers -- Special Issue on Solid-State Image Sensors| 2008
- 2282
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Special issue of IEEE Transactions on Electron Devices on solid-state image sensors| 2008
- 2283
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Special issue on IEEE Transactions on Electron Devices on vacuum electronic devices| 2008
- 2283
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Call for Papers -- Special Issue on Vacuum Electronic Devices| 2008
- 2284
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Electron Devices Society Administrative Committee| 2008
- 2284
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Call for Nominations -- EDS Administrative Committee| 2008
- C1
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[Front cover]| 2008
- C2
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IEEE Transactions on Electron Devices publication information| 2008
- C3
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IEEE Transactions on Electron Devices information for authors| 2008