Microelectronic engineering
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 3
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An efficient DC-gain matched balanced truncation realization for VLSI interconnect circuit order reductionZeng, X. / Zhou, D. / Cai, W. et al. | 2002
- 17
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Stresses in thin films and interconnect linesGudmundson, P. / Wikstrom, A. et al. | 2002
- 31
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Highly accurate closed form approximation for frequency-dependent line impedance of a lossy silicon substrate IC interconnectYmeri, H. / Nauwelaers, B. / Maex, K. et al. | 2002
- 39
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Application of combined thermal and electrical simulation for optimization of deep submicron interconnection systemsStreiter, R. / Wolf, H. / Zhu, Z. et al. | 2002
- 51
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Electromigration resistance of sputtered silver lines using different patterning techniquesHauder, M. / Hansch, W. / Gstottner, J. et al. | 2002
- 59
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Enhancement of ALCVD TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatmentsSatta, A. / Baklanov, M. / Richard, O. et al. | 2002
- 71
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Tantalum carbide and nitride diffusion barriers for Cu metallisationLaurila, T. / Zeng, K. / Kivilahti, J. K. et al. | 2002
- 81
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Correlation between microstructure control, density and diffusion barrier properties of TiN(O) filmsAlberti, A. / Molinaro, S. / La Via, F. et al. | 2002
- 89
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Copper alloy formation and film properties after annealing of Al/Cu stacks in different ambientsChen, Z. / Richter, K. / Riedel, S. et al. | 2002
- 97
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Stress control of sputter-deposited Mo-N films for micromechanical applicationsKattelus, H. / Koskenala, J. / Nurmela, A. et al. | 2002
- 107
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Electronic transport in Ru-Si-O and Ir-Si-O amorphous thin filmsGottlieb, U. / Laborde, O. / Giauque, P. H. et al. | 2002
- 113
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Integration of fluorine-doped silicon oxide in copper pilot line for 0.12-mm technologyReynard, J. P. / Verove, C. / Sabouret, E. et al. | 2002
- 119
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Integration of copper with an organic low-k dielectric in 0.12-mm node interconnectFayolle, M. / Passemard, G. / Assous, M. et al. | 2002
- 125
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Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materialsLanckmans, F. / Maex, K. et al. | 2002
- 133
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Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel filmsMurray, C. / Flannery, C. / Streiter, I. et al. | 2002
- 143
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Optimization of CVD dielectric process to achieve reliable ultra low-k air gapsArnal, V. / Torres, J. / Reynard, J. P. et al. | 2002
- 149
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Effect of dopants on chemical mechanical polishing of siliconForsberg, M. / Keskitalo, N. / Olsson, J. et al. | 2002
- 157
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NiSi salicide technology for scaled CMOSIwai, H. / Ohguro, T. / Ohmi, S. i. et al. | 2002
- 171
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Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P. S. / Mangelinck, D. / Pey, K. L. et al. | 2002
- 183
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Nanometer patterning of epitaxial CoSi2 on silicon-on-insulator substratesZhao, Q. T. / Kluth, P. / Winnerl, S. et al. | 2002
- 191
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MBE-growth of a Ge-CoSi2-Si heterostructure for vertical metal-semiconductor-metal photodetectorsWinnerl, S. / Kappius, L. / Buca, D. et al. | 2002
- 197
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Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi2 processLa Via, F. / Privitera, S. / Mammoliti, F. et al. | 2002
- 205
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Luminescence lifetime of the 1.5-mm emission of b-FeSi2 precipitate layers in siliconSchuller, B. / Carius, R. / Lenk, S. et al. | 2002
- 211
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Effects of substrate bias and temperature during titanium sputter-deposition on the phase formation in TiSi2Lundqvist, N. / Aberg, J. / Nygren, S. et al. | 2002
- 221
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Study of CoSi2 formation from a Co-Ni alloyChamirian, O. / Steegen, A. / Bender, H. et al. | 2002
- 231
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Initial reactions in Ti-Si(Mo) bilayersCocchi, R. / Ottaviani, G. / Marangon, T. et al. | 2002
- 239
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Self-assembly patterning of epitaxial CoSi2 wiresKluth, P. / Zhao, Q. T. / Winnerl, S. et al. | 2002
- 247
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Electron microscopic investigation of MnSi1.7 layers on Si(001)Mogilatenko, A. / Falke, M. / Teichert, S. et al. | 2002
- 255
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Surfactant mediated growth of silicidesTeichert, S. / Hortenbach, H. / Beddies, G. et al. | 2002
- 261
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Low resistivity ohmic contacts on 4H-silicon carbide for high power and high temperature device applicationsLee, S. K. / Zetterling, C. M. / Ostling, M. et al. | 2002
- 269
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Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbideLa Via, F. / Roccaforte, F. / Makhtari, A. et al. | 2002
- 283
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Diffusion and electrical activity of copper in Si1-x-yGexCy alloysHattab, A. / Aboelfotoh, M. O. / Tremblay, G. et al. | 2002