IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1781
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Table of contents| 2009
- 1784
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Special Issue on Compact Interconnect Models for Gigascale IntegrationSAHA, SAMAR / DEEN, JAMAL / MASUDA, HIROO et al. | 2009
- 1784
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GUEST EDITORIAL - Special Issue on Compact Interconnect Models for Gigascale IntegrationSaha, S.K. et al. | 2009
- 1787
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Compact Performance Models and Comparisons for Gigascale On-Chip Global Interconnect TechnologiesKyung-Hoae Koo, / Kapur, P. / Saraswat, K.C. et al. | 2009
- 1787
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SPECIAL ISSUE PAPERS - Compact Performance Models and Comparisons for Gigascale On-Chip Global Interconnect Technologies (Invited-Review Paper)Koo, K.-H. et al. | 2009
- 1799
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Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and ProspectsHong Li, / Chuan Xu, / Srivastava, N. et al. | 2009
- 1799
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Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (Invited Paper)Li, H. et al. | 2009
- 1822
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Compact Physics-Based Circuit Models for Graphene Nanoribbon Interconnects (Invited Paper)Naeemi, A. et al. | 2009
- 1822
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Compact Physics-Based Circuit Models for Graphene Nanoribbon InterconnectsNaeemi, A. / Meindl, J.D. et al. | 2009
- 1834
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Inductance in One-Dimensional NanostructuresYamada, T. / Madriz, F.R. / Yang, C.Y. et al. | 2009
- 1834
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Inductance in One-Dimensional Nanostructures (Invited Paper)Yamada, T. et al. | 2009
- 1840
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Interconnect Modeling: A Physical Design PerspectiveKurokawa, A. / Sato, T. / Kanamoto, T. et al. | 2009
- 1840
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Interconnect Modeling: A Physical Design Perspective (Invited Paper)Kurokawa, A. et al. | 2009
- 1852
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Performance Modeling of Low-$k$/Cu Interconnects for 32-nm-Node and BeyondTada, M. / Inoue, N. / Hayashi, Y. et al. | 2009
- 1852
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Performance Modeling of Low- Formula Not Shown /Cu Interconnects for 32-nm-Node and BeyondTada, M. / Inoue, N. / Hayashi, Y. et al. | 2009
- 1852
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Performance Modeling of Low-k-Cu Interconnects for 32-nm-Node and Beyond (Invited-Review Paper)Tada, M. et al. | 2009
- 1862
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Field-Based Capacitance Modeling for Sub-65-nm On-Chip InterconnectWei Zhao, / Xia Li, / Sam Gu, et al. | 2009
- 1873
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Closed-Form Expressions of 3-D Via Resistance, Inductance, and CapacitanceSavidis, I. / Friedman, E.G. et al. | 2009
- 1882
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The Impact of On-Chip Interconnections on CMOS RF Integrated CircuitsEl-Desouki, M.M. / Abdelsayed, S.M. / Deen, M.J. et al. | 2009
- 1891
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A Nondestructive Method of Extracting the Width and Thickness of Interconnects for a 40-nm TechnologyMao-Chyuan Tang, / Chin-Chuan Cheng, / Meng-Fan Wang, et al. | 2009
- 1897
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Compound Semiconductor Devices - InP DHBT Process in Transferred-Substrate Technology With ft and fmax Over 400 GHzKraemer, T. et al. | 2009
- 1897
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InP DHBT Process in Transferred-Substrate Technology With Formula Not Shown and Formula Not Shown Over 400 GHzKraemer, T. / Rudolph, M. / Schmueckle, F.J. et al. | 2009
- 1897
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InP DHBT Process in Transferred-Substrate Technology With $f_{t}$ and $f_{\max}$ Over 400 GHzKraemer, T. / Rudolph, M. / Schmueckle, F.J. et al. | 2009
- 1904
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Gate-Recess Technology for InAs/AlSb HEMTsLefebvre, E. / Malmkvist, M. / Borg, M. et al. | 2009
- 1912
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Electrooptical Analysis of Effects Induced by Floating Metallic Interlayers in Organic LEDsMiscioscia, R. / Vacca, P. / Nenna, G. et al. | 2009
- 1912
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Molecular and Organic Devices - Electrooptical Analysis of Effects Induced by Floating Metallic Interlayers in Organic LEDsMiscioscia, R. et al. | 2009
- 1919
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Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron HolographySuk Chung, / Johnson, S.R. / Ding Ding, et al. | 2009
- 1919
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Optoelectronics, Display, and Imaging - Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs-GaAs Light-Emitting Diodes Using Off-Axis Electron HolographyChung, S. et al. | 2009
- 1924
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Microcrystalline-Silicon Transistors and CMOS Inverters Fabricated Near the Transition to Amorphous-Growth RegimeKah-Yoong Chan, / Gordijn, A. / Stiebig, H. et al. | 2009
- 1930
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AC Microplasma Device With a Cylindrical Hollow Electrode for Improving Luminous EfficacyJeong Hun Mun, / Seung Hun Kim, / Kyung Cheol Choi, et al. | 2009
- 1935
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CMOS-SOI-MEMS Transistor for Uncooled IR ImagingGitelman, L. / Stolyarova, S. / Bar-Lev, S. et al. | 2009
- 1943
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A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS DielectricsIelmini, D. / Manigrasso, M. / Gattel, F. et al. | 2009
- 1943
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Reliability - A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS DielectricsIelmini, D. et al. | 2009
- 1953
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P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and $\hbox{N}_{2}\hbox{O}$ AnnealingNoborio, M. / Suda, J. / Kimoto, T. et al. | 2009
- 1953
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P-channel MOSFETs on 4H-SiC (0001) and nonbasal faces fabricated by oxide deposition and N2O annealingNoborio, M. / Suda, J. / Kimoto, T. et al. | 2009
- 1953
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Silicon Devices - P-Channel MOSFETs on 4H-SiC (0001) and Nonbasal Faces Fabricated by Oxide Deposition and N2O AnnealingNoborio, M. et al. | 2009
- 1953
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P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and Formula Not Shown AnnealingNoborio, M. / Suda, J. / Kimoto, T. et al. | 2009
- 1959
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On the Scaling of Flash Cell Spacer for Gate Disturb and Charge Retention OptimizationYung-Huei Lee, / McMahon, W. / Lu, Y.-L.R. et al. | 2009
- 1966
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Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Formula Not Shown Split Charge Trapping LayerZhang, G. / Lee, S.-H. / Ra, C.H. et al. | 2009
- 1966
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Second-Bit-Effect-Free Multibit-Cell Flash Memory Using $\hbox{Si}_{3} \hbox{N}_{4}/\hbox{ZrO}_{2}$ Split Charge Trapping LayerGang Zhang, / Seung-Hwan Lee, / Chang Ho Ra, et al. | 2009
- 1966
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Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4-ZrO2 Split Charge Trapping LayerZhang, G. et al. | 2009
- 1974
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Single Fermi Level Thin-Film CMOS on Glass: The Behavior of Enhancement-Mode PMOSFETs From Cutoff Through AccumulationNassar, C.J. / Williams, C.A.K. / Dawson-Elli, D. et al. | 2009
- 1980
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Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM CellsVianello, E. / Driussi, F. / Arreghini, A. et al. | 2009
- 1991
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Layout Dependence Modeling for 45-nm CMOS With Stress-Enhanced TechniqueMorifuji, E. / Aikawa, H. / Yoshimura, H. et al. | 2009
- 1999
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Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETsvan der Steen, J.-L.P.J. / Hueting, R.J.E. / Schmitz, J. et al. | 2009
- 1999
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Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETsvan der Steen, J.-L.P.J. / Hueting, R.J.E. / Schmitz, J. et al. | 2009
- 2008
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Physical Modeling for Programming of TANOS Memories in the Fowler–Nordheim RegimeCompagnoni, C.M. / Mauri, A. / Amoroso, S.M. et al. | 2009
- 2016
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Dopant-Segregated Schottky Source/Drain Double-Gate MOSFET Design in the Direct Source-to-Drain Tunneling RegimeVega, R.A. / Liu, K. / Tsu-Jae King Liu, et al. | 2009
- 2027
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Dual-Gate Characteristics of Amorphous InGaZnO4 Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film TransistorsTakechi, K. et al. | 2009
- 2027
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Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film TransistorsTakechi, K. / Nakata, M. / Azuma, K. et al. | 2009
- 2027
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Dual-Gate Characteristics of Amorphous Formula Not Shown Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film TransistorsTakechi, K. / Nakata, M. / Azuma, K. et al. | 2009
- 2034
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Lateral Trapped-Charge Profiling Based on the Extraction of the Flatband Voltage by Using the Optical Substrate Current in Nitride-Based Charge-Trap Flash MemoriesKang-Seob Roh, / Sungwook Park, / Dae Hwan Kim, et al. | 2009
- 2045
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Reliability Tradeoffs and Scaling Issues of Read Drain Bias in nor Flash MemoryYung-Huei Lee, / McMahon, W. / Lu, Y.-L.R. et al. | 2009
- 2052
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Simulation Study of Coulomb Mobility in Strained SiliconDriussi, F. / Esseni, D. et al. | 2009
- 2060
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Charging-Induced Changes in Reverse Current-Voltage Characteristics of Al-Al-Rich Al2O3-p-Si DiodesZhu, W. et al. | 2009
- 2060
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Charging-Induced Changes in Reverse Current-Voltage Characteristics of Al/Al-Rich Formula Not Shown DiodesZhu, W. / Chen, T.P. / Liu, Y. et al. | 2009
- 2060
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Charging-Induced Changes in Reverse Current–Voltage Characteristics of Al/Al-Rich $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{p-Si}$ DiodesWei Zhu, / Chen, T.P. / Yang Liu, et al. | 2009
- 2065
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Performance and Reliability of Au and Pt Single-Layer Metal Nanocrystal Flash Memory Under nand (FN/FN) OperationSingh, P.K. / Hofmann, R. / Singh, K.K. et al. | 2009
- 2073
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Analysis of NMOS and PMOS Difference in Formula Not Shown Variation With Large-Scale DMA-TEGTsunomura, T. / Nishida, A. / Hiramoto, T. et al. | 2009
- 2073
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Analysis of NMOS and PMOS Difference in $V_{T}$ Variation With Large-Scale DMA-TEGTsunomura, T. / Nishida, A. / Hiramoto, T. et al. | 2009
- 2081
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Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo ApproachDe Michielis, M. / Esseni, D. / Palestri, P. et al. | 2009
- 2081
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Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo ApproachDe Michielis, M. / Esseni, D. / Palestri, P. et al. | 2009
- 2092
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Effective Capacitance and Drive Current for Tunnel FET (TFET) CV/I EstimationMookerjea, S. / Krishnan, R. / Datta, S. et al. | 2009
- 2099
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Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM ApplicationsYuan-Feng Chen, / Jeng Gong, / Wei-Jen Tung, et al. | 2009
- 2099
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Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM ApplicationsChen, Y.-F. / Gong, J. / Tung, W.-J. et al. | 2009
- 2107
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Solid-State Device Phenomena - Shallow Trench Isolation Edge Effect on Random Telegraph Signal Noise and Implications for Flash MemoryWang, R.-V. et al. | 2009
- 2107
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Shallow Trench Isolation Edge Effect on Random Telegraph Signal Noise and Implications for Flash MemoryRuey-Ven Wang, / Yung-Huei Lee, / Yin-Lung Ryan Lu, et al. | 2009
- 2114
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An Integrated Potentiostat With an Electrochemical Cell Using Thin-Film TransistorsKimura, M. / Fukushima, H. / Sagawa, Y. et al. | 2009
- 2120
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Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's EquationVita Pi-Ho Hu, / Yu-Sheng Wu, / Ming-Long Fan, et al. | 2009
- 2128
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On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency CapacitorsTiggelman, M.P.J. / Reimann, K. / Van Rijs, F. et al. | 2009
- 2128
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On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Freqeuncy CapacitorsTiggelman, M.P.J. / Reimann, K. / Van Rijs, F. et al. | 2009
- 2137
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Shot Noise Suppression in Quasi-One-Dimensional Field-Effect TransistorsBetti, A. / Fiori, G. / Iannaccone, G. et al. | 2009
- 2144
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A New Isolation Technology for Automotive Power-Integrated-Circuit ApplicationsJingmeng Sun, / Jiang, F.X.C. / Lingpeng Guan, et al. | 2009
- 2144
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Solid-State Power and High Voltage - A New Isolation Technology for Automotive Power-Integrated-Circuit ApplicationsSun, J. et al. | 2009
- 2150
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Electron Bunching in Split-Cavity MonotronsBarroso, J.J. et al. | 2009
- 2150
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Vacuum Electron Devices - Electron Bunching in Split-Cavity MonotronsBarroso, J.J. et al. | 2009
- 2155
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Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS InvertersMartin-Martinez, J. / Gerardin, S. / Amat, E. et al. | 2009
- 2155
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BRIEFS - Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS InvertersMartín-Martínez, J. et al. | 2009
- 2160
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Temperature-Dependent Properties of Nearly Ideal ZnO Schottky DiodesAllen, M.W. / Xiaojun Weng, / Redwing, J.M. et al. | 2009
- 2165
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Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film TransistorsTakechi, K. / Nakata, M. / Eguchi, T. et al. | 2009
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[Front cover]| 2009
- C2
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IEEE Transactions on Electron Devices publication information| 2009
- C3
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IEEE Transactions on Electron Devices information for authors| 2009