IEEE Transactions on Nuclear Science
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 0_1
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Announcement| 1992
- 0_1
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Conference Author Index| 1992
- 0_1
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Welcome to the new Proceedings| 1992
- 0_1
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Changing of the Guard| 1992
- 0_1
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1992 Index| 1992
- 0_1
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Ask IEEE| 1992
- 0_1
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The new Proceedings of the IEEE ... the Journal with vision.| 1992
- 1564
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Summary of the 1992 IEEE International Nuclear and Space Radiation Effects Conference| 1992
- 1566
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1992 Conference Committee| 1992
- 1568
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Editor's commentsvan Vonno, Nick W. et al. | 1992
- 1569
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List of Reviewers| 1992
- 1571
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Outstanding Conference Paper Award| 1992
- 1573
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Nominees for 1992 Outstanding Conference Paper Award| 1992
- 1574
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In Memoriam| 1992
- 1577
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Rate prediction for single event effects-A critiquePetersen, E. L. / Pickel, J. C. / Adams, J. H. et al. | 1992
- 1600
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The relationship of proton and heavy ion upset thresholdsPetersen, E. L. et al. | 1992
- 1605
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Temperature dependence of single-event burnout in n-channel power MOSFETsJohnson, G. H. / Schrimpf, R. D. / Galloway, K. F. et al. | 1992
- 1613
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Applicability of LET to single events in microelectronic structuresXapsos, M. A. et al. | 1992
- 1622
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Charge collection at large angles of incidenceMcNulty, P. J. / Beauvais, W. J. / Reed, R. A. et al. | 1992
- 1630
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Spatial and temporal dependence SEU in a 64K SRAMBuchner, S. / Kang, K. / Stapor, W. J. et al. | 1992
- 1636
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Solutions to heavy ion induced avalanche burnout in power devicesWrobel, T. F. / Beutler, D. E. et al. | 1992
- 1642
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A comparison of charge collection effects between GaAs MESFETs and III-V HFETSHughlock, B. / Williams, T. / Harrang, J. et al. | 1992
- 1647
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Laser simulation of single-particle effectsGossett, C. / Hughlock, B. W. / Johnston, A. H. et al. | 1992
- 1654
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An observation of proton-induced latchupNichols, D. K. / Coss, J. R. / Watson, R. K. et al. | 1992
- 1657
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Picosecond charge-collection dynamics in GaAs MESFETsMcMorrow, D. / Melinger, J. S. / Knudson, A. R. et al. | 1992
- 1665
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Laser confirmation of SEU experiments in GaAs MESFET combinational logicScheiderwind, R. / Krening, D. / Buchner, S. et al. | 1992
- 1671
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Circuit reliability of memory cells with SEU protectionVinson, J. E. et al. | 1992
- 1679
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Low power SEU immune CMOS memory circuitsLiu, M. N. / Whitaker, S. et al. | 1992
- 1685
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The impact of ASIC devices on the SEU vulnerability of space-borne computersKoga, R. / Crain, W. R. / Crawford, K. B. et al. | 1992
- 1693
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Heavy ion induced single hard errors on submicronic memoriesDufour, C. / Garnier, P. / Carriere, T. et al. | 1992
- 1698
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Mechanism for single-event burnout of power MOSFETs and its characterization techniqueKuboyama, S. / Matsuda, S. / Kanno, T. et al. | 1992
- 1704
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Charge generation by heavy ions in power MOSFETs, burnout space predictions, and dynamic SEB sensitivityStassinopoulos, E. G. / Brucker, G. J. / Calvel, P. et al. | 1992
- 1712
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The radiation field in and around Hadron collider detectorsStevenson, G. R. / Fasso, A. / Ferrari, A. et al. | 1992
- 1720
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Fast neutron-induced changes in net impurity concentration of high-resistivity siliconTsevybak, I. / Bugg, B. / Walter, J. et al. | 1992
- 1730
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Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectorsLi, Z. / Kraner, H. W. / Verbitskaya, E. et al. | 1992
- 1739
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Study of device parameters for analog IC design in a 1.2 m CMOS-SOI technology after 10 MradFaccio, F. / Heijne, E. H. M. / Jarron, P. et al. | 1992
- 1747
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Study of electrically active lattice defects in Cf-252 and proton irradiated silicon diodesTrauwaert, M.-A. / Van Hellemont, J. / Simoen, E. et al. | 1992
- 1754
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Spacecraft problems in association with episodes of intense solar activity and related terrestrial phenomena during March 1991Shea, M. S. / Smart, D. F. / Allen, J. H. et al. | 1992
- 1761
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Identification of an unexpected space radiation hazardBlake, J. B. / Gussenhoven, M. S. / Mullen, E. G. et al. | 1992
- 1765
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The effect of the March 1991 storm on accumulated dose for selected satellite orbits: CRRES dose modelsGussenhoven, M. S. / Mullen, E. G. / Sperry, M. et al. | 1992
- 1773
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Characteristics of spontaneous electrical discharging of various insulators in space radiationsFrederickson, A. R. / Mullen, E. G. / Holeman, E. G. et al. | 1992
- 1785
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The effects of 1 kW class arcjet thruster plumes on spacecraft charging and spacecraft thermal control materialsBogorad, A. / Lichtin, D. A. / Bowman, C. et al. | 1992
- 1790
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The effects of conducting breaks on electrostatic discharges (ESDs) on optical solar reflector (OSR) panelsBogorad, A. / Bowman, C. / Seehra, S. et al. | 1992
- 1797
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Quasi-static model of outer zone electronsBrautigam, D. H. / Gussenhoven, M. S. / Mullen, E. G. et al. | 1992
- 1804
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A verified proton induced latch-up in spaceAdams, L. / Daly, E. J. / Harboe-Sorensen, R. et al. | 1992
- 1809
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Radiation environment measurements on shutlle missions using the CREAM experimentDyer, C. S. / Sims, A. J. / Truscott, P. R. et al. | 1992
- 1817
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Observations of single-event upsets in non-hardened high-density SRAMS in sun-synchronous orbitUnderwood, C. I. / Ward, J. W. / Dyer, C. S. et al. | 1992
- 1829
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Single event upset rates in spaceCampbell, A. / Ray, K. / CDonald, P. et al. | 1992
- 1836
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Comparison of SEU rate prediction techniquesPetersen, E. L. / Adams, J. H. et al. | 1992
- 1840
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CRRES microelectronic tests chip orbital data IISoli, G. A. / Blaes, B. R. / Buehler, M. G. et al. | 1992
- 1846
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CRRES dosimetry results and comparisons using the space radiation dosimeter and P-channel MOS dosimetersRay, K. P. / Mullen, E. G. / Stapor, W. J. et al. | 1992
- 1851
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A comparison between ^6^0Co ground tests and CRRES space flight dataRay, K. P. / Mullen, E. G. / Bradley, T. E. et al. | 1992
- 1859
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Double upsets from glancing collisions: A simple model verified with flight dataSmith, E. C. / Shoga, M. et al. | 1992
- 1865
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Survivability of high T~c microwave devices in space radiation environmentsJackson, E. M. / Weaver, B. D. / Maisch, W. G. et al. | 1992
- 1869
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Qualifying commercial ICs for space total-dose environmentsSexton, F. W. / Fleetwood, D. M. / Aldridge, C. C. et al. | 1992
- 1876
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Low dose rate space estimates for integrated circuits using real time measurements and linear system theoryStapor, W. J. / Meyers, J. P. / Kinnison, J. D. et al. | 1992
- 1883
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Qualification of a new facility for neutron hardness assurance testing of electronicsSheehan, P. S. / Saxey, B. L. et al. | 1992
- 1892
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Electronic component preview of low dose rate behaviorDavid, J. P. / Barillot, C. et al. | 1992
- 1899
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Dose-rate-independent total dose failure in 54F10 bipolar logic circuitsJenkins, W. C. et al. | 1992
- 1903
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Long-term annealing of a radiation-hardened 1.0 micron bulk CMOS processRudeck, P. J. et al. | 1992
- 1912
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Infrared mapping of transient electromagnetic fields radiated by high power microwave pulsed sourcesNorgard, J. D. / Sega, R. M. / Harrison, M. G. et al. | 1992
- 1921
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Dipole models for the far-field representation of EMP simulators with application to estimates of human RF exposureWilliams, J. W. / Hadlock, D. / Viverito, V. J. et al. | 1992
- 1935
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In situ microwave ionized air chemistry measurementsSmith, R. S. / Bushell, M. / Fleetwood, R. et al. | 1992
- 1943
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Improving the radiation burn-out susceptibility of N-channel power MOSFETsKeshavarz, A. A. / Fischer, T. A. et al. | 1992
- 1947
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A model for radiation induced edge leakage in bulk silicon NMOS transistorsJacunski, M. D. / Peckerar, M. C. et al. | 1992
- 1953
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Latent interface-trap buildup and its implications for hardness assuranceSchwank, J. R. / Fleetwood, D. M. / Shaneyfelt, M. R. et al. | 1992
- 1964
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Ionizing radiation hardening of a CCD technologySimone, A. / Debusschere, I. / Alaerts, A. et al. | 1992
- 1974
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Silicon carbide JFET radiation responseMcGarrity, J. M. / McLean, F. B. / DeLancey, W. M. et al. | 1992
- 1982
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Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data busMarshall, P. W. / Dale, C. J. / Burke, E. A. et al. | 1992
- 1990
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Gate size dependence of the radiation-produced changes in threshold voltage, mobility, and interface state density in bulk CMOSScarpulla, J. / Amram, A. L. / Gin, V. W. et al. | 1992
- 1998
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Ionizing radiation damage near CMOS transistor channel edgesMa, T.-P. / Balasinski, A. et al. | 1992
- 2004
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Ionizing radiation effects on phosphorus implanted N^+ poly gate MOS capacitors with thin gate oxidesKelleher, A. / Heyns, M. / Wulf, F. et al. | 1992
- 2012
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Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regionsAugier, P. / Todsen, J. L. / Zupac, D. et al. | 1992
- 2018
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Cobalt60 and proton radiation effects on large format, 2-D, CCD arrays for an earth imaging applicationHopkinson, G. R. et al. | 1992
- 2026
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Trends in the total-dose response of modern bipolar transistorsNowlin, R. N. / Enlow, E. W. / Schrimpf, R. D. et al. | 1992
- 2036
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Total-dose radiation effects on sol-gel derived PZT thin filmsLee, S. C. / Teowee, G. / Schrimpf, R. D. et al. | 1992
- 2044
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The effect of junction fringing fields on radiation-induced leakage current in oxide isolation structuresPershenkov, V. S. / Chuikin, V. V. et al. | 1992
- 2052
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Fluences and spectra of accelerator generated fast neutronsKegel, G. H. R. / Bertone, P. F. / Case, D. L. et al. | 1992
- 2060
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An intense large-volume uniform source of Bremsstrahlung for pulsed gamma ray simulationSanford, T. W. L. / Mock, R. C. et al. | 1992
- 2070
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Bremsstrahlung risetime shortening by diode geometry reconfigurationBushell, M. / Fleetwood, R. / Judy, D. et al. | 1992
- 2078
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Effect of new cross section evaluations on neutron spectrum determinationGriffin, P. J. / Kelly, J. G. / Luera, T. F. et al. | 1992
- 2086
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Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxidesStahlbush, R. E. / Campisi, G. J. / McKitterick, J. B. et al. | 1992
- 2098
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Total dose hardness of bonded SOI wafersMcKitterick, J. B. / Caviglia, A. / Maszara, W. P. et al. | 1992
- 2103
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Time-dependent radiation-induced charge effects in wafer-bonded SOI buried oxidesBoesch, H. E. / Taylor, T. L. et al. | 1992
- 2114
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Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxidesConley, J. F. / Lenahan, P. M. / Roitman, P. et al. | 1992
- 2121
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An SEU resistant 256K SOI SRAMHite, L. R. / Lu, H. / Houston, T. W. et al. | 1992
- 2126
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Generation lifetime, interface state density, active defect density and oxide resistivity measurements for SOI-MOSFETs and their radiation dependenceKimpton, D. / Kerr, J. et al. | 1992
- 2132
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Field dependent charge trapping effects in SIMOX and buried oxides at very high doseFlament, O. / Herve, D. / Musseau, O. et al. | 1992
- 2139
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Photoconduction measurements of the charge trapping and transport characteristics of bond-and-etch-back buried oxidesPennise, C. A. / Boesch, H. E. et al. | 1992
- 2146
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Observation of radiation induced changes in stress and electrical properties in MOS devicesShaw, D. C. / Lowry, L. / MacWilliams, K. P. et al. | 1992
- 2152
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Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping techniqueChen, W. / Balasinski, A. / Ma, T.-P. et al. | 1992
- 2158
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Modeling the time-dependent transient radiation response of semiconductor junctionsWunsch, T. F. / Axness, C. L. et al. | 1992
- 2170
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Radiation response on Al-H, Alkali-H and other H-related point defects in natural quartz crystalsBahadur, H. et al. | 1992
- 2178
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Effect of radiation-induced interface traps on 1/f noise in MOSFET'sTsai, M.-H. / Ma, T.-P. et al. | 1992
- 2186
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Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO~2 thin films on siliconConley, J. F. / Lenahan, P. M. et al. | 1992
- 2192
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New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysisFleetwood, D. M. / Miller, S. L. / Reber, R. A. et al. | 1992
- 2204
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X-ray lithography effects on MOS oxidesLelis, A. J. / Oldham, T. J. et al. | 1992
- 2211
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Electron spin resonance study of radiation-induced point defects in nitrided and reoxidized nitrided oxidesYount, J. T. / Lenahan, P. M. / Dunn, G. J. et al. | 1992
- 2220
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The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxidesSaks, N. S. / Rendell, R. W. et al. | 1992
- 2230
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Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitorsBhat, N. / Vasi, J. et al. | 1992
- 2236
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Initial hydrogen ion profiles during interface trap formation in MOS devicesBrown, D. B. / Saks, N. S. et al. | 1992
- 2244
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Interface-trap buildup rates in wet and dry oxidesShaneyfelt, M. R. / Schwank, J. R. / Fleetwood, D. M. et al. | 1992
- 2252
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Improvement of radiation hardness due to aging of fluorinated and chlorinated SiO~2/Si MOS capacitorsWang, X.-W. / Wang, Y. / Wang, D. et al. | 1992
- 2257
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Radiation effects in Ga~0~.~4~7In~0~.~5~3As devicesWalters, R. J. / Shaw, G. J. / Summers, G. P. et al. | 1992
- 2265
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Charge transport and trapping in HgCdTe MIS devicesMoriwaki, M. M. / Srour, J. R. / Strong, R. L. et al. | 1992
- 2279
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The Future of Nuclear Power: One PerspectiveMacl, Dick A. et al. | 1992
- 2282
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Measurement of X-ray Spectrum using a Small Size CdTe Multichannel DetectorTsutsui, H. / Ohtsuchi, T. / Ohmori, K. et al. | 1992
- 2286
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LQG/LTR Robust Control of Nuclear Reactors with Improved Temperature PerformanceBen-Abdennour, A. / Edwards, R. M. / Lee, K. Y. et al. | 1992
- 2295
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Spectroscopic Analysis of Proton-Induced Fluorescence From Yttrium and Gadolinium Oxysulfide PhosphorsHollerman, W. A. / Fisher, J. H. / Shelby, G. A. et al. | 1992
- 2298
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Improved Nuclear Reactor Temperature Control Using Diagonal Recurrent Neural NetworksKu, C. C. / Lee, K. Y. / Edwards, R. M. et al. | 1992
- 2309
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Proton-Induced SEU, Dose Effects, and LEO Performance Predictions for R3000 MicroprocessorsShaeffer, D. L. / Kimbrough, J. R. / Wilburn, J. W. et al. | 1992
- 2316
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A Flow-Through Detector for Nano-Curie Activities Encountered in HPLC Analysis of Pet Tracer MetabolitesNickels, R. J. / De Jesus, O. T. / Solin, O. et al. | 1992
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IEEE Transactions on Nuclear Science publication information| 1992
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Information for Authors| 1992
- c4
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Affiliate plan of the IEEE Nuclear and Plasma Sciences Society| 1992