IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
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T-ED Retiring EditorsCressler, John D. et al. | 2013
- 4
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EDITORIAL - T-ED Retiring EditorsCressler, J D et al. | 2013
- 5
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Welcome to a New T-ED EditorCressler, John D. et al. | 2013
- 6
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Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETsKuo-Hsing Kao, / Verhulst, A. S. / Vandenberghe, W. G. et al. | 2013
- 6
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Silicon and Column IV Semiconductor Devices - Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETsKao, K-H et al. | 2013
- 13
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Revisited RF Compact Model of Gate Resistance Suitable for High- Formula Not Shown /Metal Gate TechnologyDormieu, B. / Scheer, P. / Charbuillet, C. et al. | 2013
- 13
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Revisited RF Compact Model of Gate Resistance Suitable for High- $K$/Metal Gate TechnologyDormieu, B. / Scheer, P. / Charbuillet, C. et al. | 2013
- 20
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Coupling Mechanisms and Effects Between On-Chip Antenna and Inductor or Coplanar WaveguideTianwei Deng, / Zhiming Chen, / Zhang, Y. P. et al. | 2013
- 28
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Design Optimization of Multigate Bulk MOSFETsHo, Byron / Xin Sun, / Changhwan Shin, et al. | 2013
- 34
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An Investigation on the Optimization and Scaling of Complementary SiGe HBTsChakraborty, P. S. / Moen, K. A. / Cressler, J. D. et al. | 2013
- 42
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Control of Resistance by Oxide on the Surface of Cu Interconnects With CuSiN and Ti-based Barrier MetalHayashi, Y. / Matsunaga, N. / Wada, M. et al. | 2013
- 49
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Comparison of SRAM Cells for 10-nm SOI FinFETs Under Process and Environmental VariationsJaksic, Z. / Canal, R. et al. | 2013
- 56
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Formula Not Shown Interface Engineering of Germanium Epitaxial Layer Grown Directly on SiliconTan, Y. H. / Yew, K. S. / Lee, K. H. et al. | 2013
- 56
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$\hbox{Al}_{2}\hbox{O}_{3}$ Interface Engineering of Germanium Epitaxial Layer Grown Directly on SiliconYew Heng Tan, / Kwang Sing Yew, / Kwang Hong Lee, et al. | 2013
- 56
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AI2O3 Interface Engineering of Germanium Epitaxial Layer Grown Directly on SiliconTan, Y H et al. | 2013
- 63
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Subthreshold Analog/RF Performance Enhancement of Underlap DG FETs With High- $k$ Spacer for Low Power ApplicationsKoley, K. / Dutta, A. / Syamal, B. et al. | 2013
- 63
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Subthreshold Analog/RF Performance Enhancement of Underlap DG FETs With High- Formula Not Shown Spacer for Low Power ApplicationsKoley, K. / Dutta, A. / Syamal, B. et al. | 2013
- 70
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Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random MemoryNardi, F. / Balatti, S. / Larentis, S. et al. | 2013
- 78
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Fabrication and Electrical Characterization of Fully CMOS-Compatible Si Single-Electron DevicesKoppinen, P. J. / Stewart, M. D. / Zimmerman, N. M. et al. | 2013
- 84
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Stochastic Variability in Silicon Double-Gate Lateral Tunnel Field-Effect TransistorsLeung, G. / Chi On Chui, et al. | 2013
- 92
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Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser AnnealingHsu-Yu Chang, / Adams, B. / Po-Yen Chien, et al. | 2013
- 97
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FEM Model of Wraparound CNTFET With Multi-CNT and Its Capacitance ModelingAkanda, M. R. K. / Khosru, Q. D. M. et al. | 2013
- 103
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Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as DielectricsKayoung Lee, / Fallahazad, B. / Hongki Min, et al. | 2013
- 109
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Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETsKuo-Liang Yeh, / Jyh-Chyurn Guo, et al. | 2013
- 117
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Orientational Dependence in Device Performances of InAs and Si Nanowire MOSFETs Under Ballistic TransportShimoida, K. / Yamada, Y. / Tsuchiya, H. et al. | 2013
- 123
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Physical Modeling of the Capacitance and Capacitive Coupling Noise of Through-Oxide Vias in FDSOI-Based Ultra-High Density 3-D ICsChuan Xu, / Banerjee, K. et al. | 2013
- 132
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Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode CoresArora, R. / Cressler, J. D. et al. | 2013
- 140
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Contact-Induced Negative Differential Resistance in Short-Channel Graphene FETsGrassi, R. / Low, T. / Gnudi, A. et al. | 2013
- 147
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Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM CellsHu, Vita Pi-Ho / Ming-Long Fan, / Pin Su, et al. | 2013
- 153
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Fabrication of Formula Not Shown pMOSFETs Using Corrugated Substrates for Improved Formula Not Shown and Reduced Layout-Width DependenceHo, B. / Xu, N. / Wood, B. et al. | 2013
- 153
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Fabrication of Si1-xGex/Si pMOSFETs Using Corrugated Substrates for Improved /ON and Reduced Layout-Width DependenceHo, B et al. | 2013
- 153
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Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width DependenceHo, B. / Nuo Xu, / Wood, B. et al. | 2013
- 159
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The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTsSukwon Choi, / Heller, E. R. / Dorsey, D. et al. | 2013
- 159
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Compound Semiconductor Devices - The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTsChoi, S et al. | 2013
- 163
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InP DHBTs Having Lateral and Sidewall Collector Schottky ContactsCohen-Elias, D. / Gavrilov, A. / Cohen, S. et al. | 2013
- 171
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A Parametric Study of InGaN/GaN Nanorod Core-Shell LEDsAuf der Maur, Matthias / Sacconi, F. / Di Carlo, A. et al. | 2013
- 178
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Position-Dependent Bulk Traps and Carrier Compensation in 4H-SiC Bipolar Junction TransistorsUsman, M. / Nawaz, M. / Hallen, A. et al. | 2013
- 186
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Analysis of Contributing Factors for Determining the Reliability Characteristics of GaN-Based White Light-Emitting Diodes With Dual Degradation KineticsEunjin Jung, / Min Soo Kim, / Hyunsoo Kim, et al. | 2013
- 192
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Impact of Buffer Layer on Atomic Layer Deposited TiAlO Alloy Dielectric Quality for Epitaxial-GaAs/Ge Device ApplicationDalapati, G. K. / Chia, C. K. / Mahata, C. et al. | 2013
- 200
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Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar TransistorsMarks, Z. D. / Haygood, I. W. / Van Zeghbroeck, B. et al. | 2013
- 206
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Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTsSchleeh, J. / Rodilla, H. / Wadefalk, N. et al. | 2013
- 213
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Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation TechniqueHan-Yin Liu, / Bo-Yi Chou, / Wei-Chou Hsu, et al. | 2013
- 221
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Micromachined Passive Bandpass Filters Based on GaAs Monolithic-Microwave-Integrated-Circuit TechnologyZhiqiang Zhang, / Xiaoping Liao, et al. | 2013
- 229
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Photoelectrical and Low-Frequency Noise Characteristics of ZnO Nanorod Photodetectors Prepared on Flexible SubstrateChen, T. P. / Young, S. J. / Chang, S. J. et al. | 2013
- 235
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Formula Not Shown -Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H. Q. / Trinh, H. D. / Chang, E. Y. et al. | 2013
- 235
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In0.5Ga0.5As-Based Metal-Oxide-Semiconductor Capacitor on GaAs Substrate Using Metal-Organic Chemical Vapor DepositionNguyen, H Q et al. | 2013
- 235
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$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$ -Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor DepositionNguyen, H. Q. / Trinh, H. D. / Chang, E. Y. et al. | 2013
- 241
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Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current MethodBiqing Wu, / Siqi Lin, / Tien-Mo Shih, et al. | 2013
- 246
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Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational SystemsRajendran, B. / Yong Liu, / Jae-sun Seo, et al. | 2013
- 246
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Memory Devices and Technology - Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational SystemsRajendran, B et al. | 2013
- 254
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Impact of Moisture From Passivation on Endurance and Retention of NAND Flash MemoryZih-Song Wang, / Te-Yuan Yin, / Tzung-Hua Ying, et al. | 2013
- 260
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Thin Film Transistors - Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip ApplicationsYamada, T et al. | 2013
- 260
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Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip ApplicationsYamada, T. / Nakajima, Y. / Hanajiri, T. et al. | 2013
- 268
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Very Large Current Modulation in Vertical Heterostructure Graphene/hBN TransistorsFiori, G. / Bruzzone, S. / Iannaccone, G. et al. | 2013
- 274
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Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n JunctionsGhosh, R K et al. | 2013
- 274
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Direct Band-to-Band Tunneling in Reverse Biased $ \hbox{MoS}_{2}$ Nanoribbon p-n JunctionsGhosh, R. K. / Mahapatra, S. et al. | 2013
- 274
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Direct Band-to-Band Tunneling in Reverse Biased Formula Not Shown Nanoribbon p-n JunctionsGhosh, R. K. / Mahapatra, S. et al. | 2013
- 280
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Charge Distribution and Contact Resistance Model for Coplanar Organic Field-Effect TransistorsChang Hyun Kim, / Bonnassieux, Y. / Horowitz, G. et al. | 2013
- 288
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A Self-Consistent Electrothermal Model for Analyzing NBTI Effect in p-Type Poly-Si Thin-Film TransistorsChih-Hsiang Ho, / Panagopoulos, G. / Roy, K. et al. | 2013
- 295
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Degradation of Polycrystalline Silicon TFT CMOS Inverters under AC OperationWei Chen, / Mingxiang Wang, / Yan Zhou, et al. | 2013
- 301
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Application of MgCaO Cathode Layer to Plasma Display Panel for High Luminous EfficacyTae-Ho Lee, / Hee-Woon Cheong, / Ohyung Kwon, et al. | 2013
- 301
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Optoelectronics, Displays, Imaging - Application of MgCaO Cathode Layer to Plasma Display Panel for High Luminous EfficacyLee, T-H et al. | 2013
- 305
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Analysis of Gated CMOS Image Sensor for Spatial FilteringSpivak, A. / Belenky, A. / Fish, A. et al. | 2013
- 314
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Fixed-Pattern-Noise Correction for an Integrating Wide-Dynamic-Range CMOS Image SensorDas, D. / Collins, S. et al. | 2013
- 320
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High-Performance Solution-Processed ZrInZnO Thin-Film TransistorsPhan Trong Tue, / Miyasako, T. / Jinwang Li, et al. | 2013
- 320
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High-Performance Solution-Processed ZrlnZnO Thin-Film TransistorsTue, P T et al. | 2013
- 327
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Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film TransistorsMejia, I. / Salas-Villasenor, A. L. / Dongkyu Cha, et al. | 2013
- 333
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Color-Tunable and Phosphor-Free White-Light Multilayered Light-Emitting DiodesCheung, Y. F. / Choi, H. W. et al. | 2013
- 339
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High- Formula Not Shown Backside Silicon-Embedded Inductor for Power Applications in Formula Not Shown and MHz RangeWu, R. / Sin, J. K. / Yue, C. P. et al. | 2013
- 339
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Solid-State Power and High Voltage Devices - High-Q Backside Silicon-Embedded Inductor for Power Applications in μH and MHz RangeWu, R et al. | 2013
- 339
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High-$Q$ Backside Silicon-Embedded Inductor for Power Applications in $\mu\hbox{H}$ and MHz RangeRongxiang Wu, / Sin, J. K. O. / Yue, C. P. et al. | 2013
- 346
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A Novel Compact High-Voltage LDMOS Transistor Model for Circuit SimulationLongxing Shi, / Kan Jia, / Weifeng Sun, et al. | 2013
- 354
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Design of Novel 300-V Field-MOS FETs With Low on-Resistance for Analog Switch CircuitsMiyoshi, T. / Tominari, T. / Hayashi, Y. et al. | 2013
- 360
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High-Performance p-Channel LDMOS Transistors and Wide-Range Voltage Platform Technology Using Novel p-Channel StructureShimamoto, S. / Yanagida, Y. / Shirakawa, S. et al. | 2013
- 366
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Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiCMenon, K. G. / Narayanan, E. M. S. et al. | 2013
- 374
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Materials, Processing, and Packaging - Cu Interconnect Limitations and Opportunities for SWNT Interconnects at the End of the RoadmapCeyhan, A et al. | 2013
- 374
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Cu Interconnect Limitations and Opportunities for SWNT Interconnects at the End of the RoadmapCeyhan, A. / Naeemi, A. et al. | 2013
- 383
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Demonstration of a Subthreshold FPGA Using Monolithically Integrated Graphene InterconnectsKyeong-Jae Lee, / Hyesung Park, / Jing Kong, et al. | 2013
- 391
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Self-Selection Unipolar Formula Not Shown -Based RRAMTran, X. A. / Zhu, W. / Liu, W. J. et al. | 2013
- 391
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Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAMTran, X. A. / Zhu, W. / Liu, W. J. et al. | 2013
- 391
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Solid-State Device Phenomena - Self-Selection Unipolar HfOx-Based RRAMTran, X A et al. | 2013
- 396
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SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTIFranco, J. / Kaczer, B. / Roussel, P. J. et al. | 2013
- 405
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SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices—Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability IssuesFranco, J. / Kaczer, B. / Toledano-Luque, M. et al. | 2013
- 413
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New Insights Into Defect Loss, Slowdown, and Device Lifetime EnhancementMeng Duan, / Jian Fu Zhang, / Zhigang Ji, et al. | 2013
- 420
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Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar ArrayChun-Li Lo, / Tuo-Hung Hou, / Mei-Chin Chen, et al. | 2013
- 427
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Comparison of Interfacial and Bulk Ionic Motion in Analog MemristorsGreenlee, J. D. / Calley, W. L. / Moseley, M. W. et al. | 2013
- 433
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Electrical Resistivity of Liquid Formula Not Shown Based on Thin-Film and Nanoscale Device MeasurementsCil, K. / Dirisaglik, F. / Adnane, L. et al. | 2013
- 433
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Electrical Resistivity of Liquid Ge2Sb2Te5 Based on Thin-Film and Nanoscale Device MeasurementsCU, K et al. | 2013
- 433
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Electrical Resistivity of Liquid $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Based on Thin-Film and Nanoscale Device MeasurementsCil, K. / Dirisaglik, F. / Adnane, L. et al. | 2013
- 438
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Forming Kinetics in Formula Not Shown -Based RRAM CellsLorenzi, P. / Rao, R. / Irrera, F. et al. | 2013
- 438
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Forming Kinetics in $\hbox{HfO}_{2}$ -Based RRAM CellsLorenzi, P. / Rao, R. / Irrera, F. et al. | 2013
- 438
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Forming Kinetics in HfO2-Based RRAM CellsLorenzi, P et al. | 2013
- 444
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On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETsdos Santos, Sara D. / Nicoletti, T. / Martino, J. A. et al. | 2013
- 451
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Performance Comparison of Conventional and Inverted Organic Bulk Heterojunction Solar Cells From Optical and Electrical AspectsDazheng Chen, / Chunfu Zhang, / Zhizhe Wang, et al. | 2013
- 451
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Molecular and Organic Devices - Performance Comparison of Conventional and Inverted Organic Bulk Heterojunction Solar Cells From Optical and Electrical AspectsChen, D et al. | 2013
- 458
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Improved Efficiency of Backward-Wave Oscillator With an Inclined Electron BeamSattorov, M. / Khutoryan, E. / Lukin, K. et al. | 2013
- 458
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Vacuum Electron Devices - Improved Efficiency of Backward-Wave Oscillator With an Inclined Electron BeamSattorov, M et al. | 2013
- 464
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The Design and Fabrication of Carbon-Nanotube-Based Field Emission X-Ray Cathode With Ballast ResistorYonghai Sun, / Jaffray, D. A. / Yeow, J. T. W. et al. | 2013
- 471
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High-Power Millimeter-Wave BWO Driven by Sheet Electron BeamZhanliang Wang, / Yubin Gong, / Yanyu Wei, et al. | 2013
- 478
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Field-Emission Characteristics of Selectively Grown CNTsChung-Nan Tsai, / Kirkici, H. et al. | 2013
- 482
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High-Power Tunable Terahertz Radiation by High-Order Harmonic GenerationHuarong Gong, / Travish, G. / Jin Xu, et al. | 2013
- 487
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Nanodiamond Vacuum Field Emission Integrated Differential AmplifierShao-Hua Hsu, / Weng Poo Kang, / Davidson, J. L. et al. | 2013
- 494
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Enhancing Frequency-Tuning Ability of an Improved Relativistic Backward-Wave OscillatorWei Song, / Xiaowei Zhang, / Changhua Chen, et al. | 2013
- 498
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Bipolar Poisson Solution for Independent Double-Gate MOSFETAbraham, A. / Thakur, P. K. / Mahapatra, S. et al. | 2013
- 498
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BRIEFS - Bipolar Poisson Solution for Independent Double-Gate MOSFETAbraham, A et al. | 2013
- 502
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Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating EffectVerma, R. / Bhattacharya, S. / Mahapatra, S. et al. | 2013
- 506
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High-Power Copper Gratings for a Sheet-Beam Traveling-Wave Amplifier at G-bandJoye, C. D. / Calame, J. P. / Cook, A. M. et al. | 2013
- 510
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Electron Transport in InAsSb-Based nBn Photodetector StructuresUmana-Membreno, G. A. / Klein, B. / Smith, E. P. G. et al. | 2013
- 513
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Characterization of Thermoelectric Properties of Heavily Doped n-Type Polycrystalline Silicon Carbide Thin FilmsMan I Lei, / Mehregany, M. et al. | 2013
- 518
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Errata to Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFETJandhyala, S. / Abraham, A. / Anghel, C. et al. | 2013
- 518
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Errata to “Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET” [Jul 12 1974-1979]Jandhyala, Srivatsava / Abraham, Aby / Anghel, Costin et al. | 2013
- 518
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CORRESPONDENCE - Errata to "Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFET"Jandhyala, S et al. | 2013
- 519
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Special Issue on GaN Electronic Devices| 2013
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Table of contents| 2013
- C2
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IEEE Transactions on Electron Devices publication information| 2013
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IEEE Transactions on Electron Devices information for authors| 2013
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ANNOUNCEMENTS - Call for Papers — Special Issue on GaN Electron Devices| 2013
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Physical Modeling of the Capacitance and Capacitive Coupling Noise of Through-Oxide Vras in FDSOI-Based Ultra-High-Density 3-D ICsXu, C et al. | 2013