IEEE Transactions on Nuclear Science
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Inhaltsverzeichnis
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Selected papers from the 1996 IEEE Nuclear and Space Radiation Effects Conference (NSREC 1996)| 1996
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Conference Summary| 1996
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1996 Conference Committee| 1996
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Session Chairpersons| 1996
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Steering Group| 1996
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Guest Editor’s CommentsCampbell, Art et al. | 1996
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Reviewers for this Issue| 1996
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Outstanding Conference Paper Award| 1996
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Meritorious Papers| 1996
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Nominated Papers| 1996
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Data Workshop Awards| 1996
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Awards Committee Members| 1996
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Awards Chairman's Comments| 1996
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In Memoriam| 1996
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Radiation Effects at Low Electric Fields in Thermal, SIMOX and Bipolar-Base OxidesFleetwood, D.M. et al. | 1996
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Radiation-Induced Interface Traps in Hardened MOS Transistors: An Improved Charge-Pumping StudyAutran, J.L. et al. | 1996
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The Determination of Si-SiO2 Interface Trap Density in Irradiated Four-Terminal VDMOSFETs Using Charge PumpingWitczak, S.C. et al. | 1996
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The Effect of Deposition Conditions on the Radiation Tolerance of BPSG FilmsFuller, R. et al. | 1996
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Modeling the Field and Thermal Dependence of Radiation-Induced Charge Annealing in MOS DevicesEmelianov, V.V. et al. | 1996
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Proposed Two-Level Acceptor-Donor (AD) Center and the Nature of Switching Traps in Irradiated MOS StructuresPershenkov, V.S. et al. | 1996
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A New Model for Generation-Recombination in Silicon Depletion Regions after Neutron IrradiationWatts, S.J. et al. | 1996
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Time Resolved Annealing Studies of Single Neutron Irradiated Avalanche PhotodiodesDai, M. et al. | 1996
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Nuclear Radiation Displacement Damage Prediction in Gallium Arsenide through Low Temperature Photoluminescence MeasurementsKhanna, S.M. et al. | 1996
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Breakdown Properties of Irradiated MOS CapacitorsPaccagnella, A. et al. | 1996
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A Proposed Model for Positive Charge in SiO2 Thin Films: Over-Coordinated Oxygen CentersWarren, W.L. et al. | 1996
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Electron Trapping in Buried Oxides During Irradiation at 40 and 300 KStahlbush, R.E. et al. | 1996
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Electron Spin Resonance Characterization of Trapping Centers in Unibond(R) Buried OxidesConley Jr, J.F. et al. | 1996
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Dependence of Radiation Induced Buried Oxide Charge on Silicon-on-Insulator Fabrication TechnologyLawrence, R.K. et al. | 1996
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Total Dose Hardening of SIMOX Buried Oxides for Fully Depleted Devices in Rad-Tolerant ApplicationsBrady, F.T. et al. | 1996
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Two-Dimensional Simulation of Total Dose Effects on NMOSFET with Lateral Parasitic TransistorBrisset, C. et al. | 1996
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CMOS-SOS RAM Transient Radiation Upset and "Inversion" Effect InvestigationNikiforov, A.Y. et al. | 1996
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Effects of Material and-or Structure on Shielding of Electronic DevicesMangeret, R. et al. | 1996
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A Dose Rate Independent pMOS Dosimeter for Space ApplicationsSchwank, J.R. et al. | 1996
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Stacked p-FET Dosimeter for the STRV-2 MWIR DetectorBuehler, M. et al. | 1996
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High Purity Silicon as a Basic Material for Manufacturing of Radiation Detectors and Integral Neutron Radiation DosimetersKhivrich, V.I. et al. | 1996
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Simultaneous Macro and Micro Dosimetry with MOSFETsRosenfeld, A.B. et al. | 1996
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Measurement of Fluence and Flux of Proton Beams Using Differentially Filtered Diamond Detectors and Radiachromic FilmJudy, D.C. et al. | 1996
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Simulation of Spacecraft Secondary Particle Emissions & Their Energy Deposition in CCD X-Ray DetectorsDyer, C.S. et al. | 1996
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PRISM -- A Tool for Modelling Proton Energy Deposition in Semi-Conductor MaterialsOldfield, M.K. et al. | 1996
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Space Applications of the MITS Electron-Photon Monte Carlo Transport Code SystemKensek, R.P. et al. | 1996
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A Comprehensive Comparison of CEPXS-ONELD Calculations of Dose Enhancement with the Co-60 Data Set of Wall and BurkeGarth, J.C. et al. | 1996
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Single Event Upset at Ground LevelNormand, E. et al. | 1996
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Measurements of the Radiation Environment from CREDO-II on STRV & APEXDyer, C.S. et al. | 1996
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Single Event Upsets Caused by Solar Energetic Heavy IonsTylka, A.J. et al. | 1996
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Ground Verification of In-Orbit Anomalies in the Double Probe Electric Field Experiment on FrejaJohlander, B. et al. | 1996
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New Techniques for Predicting Solar Proton Fluences for Radiation Effects ApplicationsXapsos, M.A. et al. | 1996
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Method for Estimating Spontaneous Pulse Rate for Insulators Inside SpacecraftFrederickson, A.R. et al. | 1996
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Probability Factors Governing ESD Effects in Geosynchronous OrbitWrenn, G.L. et al. | 1996
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Shielding Considerations for Satellite MicroelectronicsFan, W.C. et al. | 1996
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Impact of Technology Trends on SEU in CMOS SRAMsDodd, P.E. et al. | 1996
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Cross Section Measurements and Upset Rate CalculationsPetersen, E. et al. | 1996
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Modeling the Heavy Ion Cross-Section for Single Event Upset with Track Structure Effects: The HIC-UP-TS ModelConnell, L.W. et al. | 1996
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Direct Processes in the Energy Deposition of Protons in SiliconBarak, J. et al. | 1996
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An Empirical Model for Predicting Proton Induced UpsetCalvel, P. et al. | 1996
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Non-Destructive Measurement for CMOS Devices Using Charge-Collection TechniquesEdmonds, L. et al. | 1996
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SEU-Hardened Storage Cell Validation Using a Pulsed LaserVelazco, R. et al. | 1996
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Evaluation of Soft-Error Hardness of DRAMs under Quasi-Heavy Ion Irradiation Using He Single Ion Microprobe TechniqueMatsukawa, T. et al. | 1996
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Comparison of Beam Blanking SEM and Heavy Ion SEU Tests on NASDA's 64KBit SRAMsPesce, A. et al. | 1996
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Single Event Upset Cross Sections at Various Data RatesReed, R.A. et al. | 1996
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A Systems-Oriented Single Event Effects Test Approach for High Speed Digital Phase-Locked LoopsJobe, K. et al. | 1996
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Upset Hardened Memory Design for Submicron CMOS TechnologyCalin, T. et al. | 1996
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Analysis of Multiple Bit Upsets (MBU) in a CMOS SRAMMusseau, O. et al. | 1996
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S.E.U. Experiments on an Artificial Neural Network Implemented by Means of Digital ProcessorsVelazco, R. et al. | 1996
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Charge Collection in GaAs MESFET Circuits Using a High Energy MicrobeamBuchner, S. et al. | 1996
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Charge-Collection Characteristics of GaAs MESFETs Fabricated with a Low-Temperature Grown GaAs Buffer Layer: Computer SimulationMcMorrow, D. et al. | 1996
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First Observations of Power MOSFET Burnout with High Energy NeutronsOberg, D.L. et al. | 1996
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First Observation of Proton Induced Power MOSFET Burnout in Space: The CRUX Experiment on APEXAdolphsen, J.W. et al. | 1996
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SEGR and SEB in N-Channel Power MOSFETsAllenspach, M. et al. | 1996
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A Physical Interpretation for the Single-Event-Gate-Rupture Cross-Section of N-Channel Power MOSFETsJohnson, G.H. et al. | 1996
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Influence of Ion Beam Energy on SEGR Failure Thresholds of Vertical Power MOSFETsTitus, J.L. et al. | 1996
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SEGR Response of a Radiation-Hardened Power MOSFET TechnologyWheatley, C.F. et al. | 1996
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Quantitative Estimation of Generation Rates of Si-SiO2 Interface Defects by MeV He Single Ion IrradiationKoh, M. et al. | 1996
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Heavy Ion and Proton Induced Single Event Transients in ComparatorsNichols, D.K. et al. | 1996
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Single Event Effects in Pulse Width Modulation ControllersPenzin, S.H. et al. | 1996
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Radiation Effect Characterization and Test Methods of Single-Chip and Multi-Chip Stacked 16Mbit DRAMsLaBel, K.A. et al. | 1996
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The Risk of Utilizing SEE Sensitive COTS Digital Signal Processor (DSP) Devices in SpaceKoga, R. et al. | 1996
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Mechanism of Anomalous Degradation of Silicon Solar Cells Subjected to High-Fluence IrradiationOhshima, T. et al. | 1996
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The Impact of Space Protons on X-Ray Sensing with Charge Coupled Devices (CCDs)Holmes-Siedle, A. et al. | 1996
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Comparison of Laser Diode Response to Pulsed Electrical and Radiative ExcitationsBaggio, J. et al. | 1996
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High Energy Proton and Alpha Radiation Effects on GaAs-AlGaAs Quantum Well Infrared PhotodetectorsKhanna, S.M. et al. | 1996
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Degradation and Recovery of In0.53Ga0.47As Photodiodes by 1-MeV Fast NeutronsOhyama, H. et al. | 1996
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Gamma Radiation Tests of Potential Optical Fiber Candidates for FibroscopyDeparis, O. et al. | 1996
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Modeling Ionizing Radiation Induced Gain Degradation of the Lateral PNP Bipolar Junction TransistorSchmidt, D.M. et al. | 1996
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Analysis of Bipolar Linear Circuit Response Mechanisms for High and Low Dose Rate Total Dose IrradiationsBarnaby, H. et al. | 1996
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Enhanced Damage in Bipolar Devices at Low Dose Rates: Effects at Very Low Dose RatesJohnston, A.H. et al. | 1996
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Enhanced Total Dose Damage in Junction Field Effect Transistors and Related Linear Integrated CircuitsFlament, O. et al. | 1996
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Performance of Commercial Analog Multiplexers for Spaceborne ApplicationsLum, G.K. et al. | 1996
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Dose Rate and Total Dose 1-f Noise Performance of GaAs Heterojunction Bipolar TransistorsHiemstra, D.M. et al. | 1996
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Radiation Response of P-I-P Diodes on Diamond Substrates of Various Types: Electrical Properties of Semiconductor-Insulator HomojunctionsDenisenko, A. et al. | 1996
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Degradation and Recovery of Proton Irradiated Si1+xGeMx Epitaxial DevicesOhyama, H. et al. | 1996
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CMOS Inverter Design-Hardened to the Total Dose EffectRoche, F.M. et al. | 1996
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Radiation Response of Advanced Commercial SRAMsLelis, A.J. et al. | 1996
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Radiation and Postirradiation Functional Upsets in a CMOS SRAMChumakov, A.I. et al. | 1996
- 3115
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Dose Rate Laser Simulation Tests Adequacy: Shadowing and High Intensity Effects AnalysisNikiforov, A.Y. et al. | 1996
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The Effects of Radiation on MEMS AccelerometersKnudson, A.R. et al. | 1996
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Total Dose Effects on Microelectromechanical Systems (MEMS): AccelerometersLee, C.I. et al. | 1996
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Life-Cycle Cost Trade Studies for Hardness AssuranceMillward, D.G. et al. | 1996
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Hard Error Dose Distributions of Gate Oxide Arrays in the Laboratory and Space EnvironmentsXapsos, M.A. et al. | 1996
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Total Dose Hardness Assurance Techniques for New Generation COTS DevicesLee, C.I. et al. | 1996
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Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction TransistorsWitczak, S.C. et al. | 1996
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Elevated Temperature Irradiation of Bipolar Linear MicrocircuitsPease, R.L. et al. | 1996
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Total Dose and Proton Damage in OptocouplersRax, B.G. et al. | 1996
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Low Dose Rate Proton Irradiation of Quartz Crystal ResonatorsKoga, R. et al. | 1996
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The Use of Conversion Model for CMOS IC Prediction in Space EnvironmentsShvetzov-Shilovsky, I.N. et al. | 1996
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Gate-Level Modeling of Leakage Current Failure Induced by Total Dose for the Generation of Worst-Case Test VectorsAbou-Auf, A.A. et al. | 1996
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Conference Author Index| 1996
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Electron Confinement in Drift Detectors by Means of "Channel-Stop" Implants: Characterization at High Signal ChargesCastoldi, A. et al. | 1996
- 3207
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SEU Cross Sections Derived from a Diffusion AnalysisEdmonds, L.D. et al. | 1996
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Charge-Sensitive Amplifier Front-End with an nJFET and a Forward-Biased Reset DiodeFazzi, A. et al. | 1996
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Identification of Reactor Vessel Failures Using Spatiotemporal Neural NetworksRoh, C.H. et al. | 1996
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Consideration of the Method of Image Diagnosis with Respect to Frontal Lobe AtrophySato, K. et al. | 1996
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A Practical Block Detector for a Depth-Encoding PET CameraRogers, J.G. et al. | 1996
- 3249
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Design and Performance Evaluation of a High-Resolution Small Animal Positron TomographPavlopoulos, S. et al. | 1996
- 3256
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An Energy-Subtraction Compton Scatter Camera Design for In Vivo Medical Imaging of RadiopharmaceuticalsRohe, R.C. et al. | 1996
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First Results from a YAP:Ce Gamma Camera for Small Animal StudiesNotaristefani, F.de et al. | 1996
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Monte Carlo Modeling of Penetration Effect for Iodine-131 Pinhole ImagingWang, H. et al. | 1996
- 3278
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Noise Characterization of Combined Bellini-Type Attenuation Correction and Frequency-Distance Principle Restoration FilteringSoares, E.J. et al. | 1996
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Evaluation of the Effects of Patient Arm Attenuation in SPECT Cardiac Perfusion ImagingLuo, D. et al. | 1996
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An Investigation of Factors Affecting Detector and Geometric Correction in Normalization of 3-D PET DataBailey, D.L. et al. | 1996
- 3308
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Methods for the Correction of Vascular Artifacts in PET O-15 Water Brain-Mapping StudiesChen, K. et al. | 1996
- 3315
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Monte Carlo Modeling of Coherent Scattering: Influence of InterferenceLeliveld, C.J. et al. | 1996
- 3322
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Investigation of Partial Volume Correction Methods for Brain FDG PET StudiesYang, J. et al. | 1996
- 3328
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A Fast Implementation of the Incremental Backprojection Algorithms for Parallel Beam GeometriesChen, C.-M. et al. | 1996
- 3335
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Reducing the Effect of Nonstationary Resolution on Activity Quantitation with the Frequency Distance Relationship in SPECTPretorius, P.H. et al. | 1996
- 3342
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Characterization of Fluor Concentration and Geometry in Organic Scintillators for in Situ Beta ImagingTornai, M.P. et al. | 1996
- 3348
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Measurement of Blood Vessel Characteristics for Disease Detection Based on Cone-Beam CT ImagesKawata, Y. et al. | 1996
- 3355
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A New Axial Smoothing Method Based on Elastic MappingYang, J. et al. | 1996
- 3361
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A Comparison of Hopfield Neural Network and Boltzmann Machine in Segmenting MR Images of the BrainSammouda, R. et al. | 1996
- 3370
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A Comparison of Rotation-Based Methods for Iterative Reconstruction AlgorithmsBella, E.V.R.Di et al. | 1996
- 3377
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Correction to "A Class of Analytical Methods That Compensate to Attenuation and Spatially-Variant Resolution in 2D SPECT"Pan, X. et al. | 1996
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Correction to "A Class of Analytical Methods That Compensate for Attenuation and Spatially-Variant Resolution in 2D SPECT" [Erratum]Xiaochuan Pan, / Metz, C.E. / Chin-Tu Chen, et al. | 1996
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1996 INDEX| 1996
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[Front Cover]| 1996
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IEEE Transactions on Nuclear Science publication information| 1996
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Information for Authors| 1996
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Affiliate plan of the IEEE Nuclear and Plasma Sciences Society| 1996