Microelectronic engineering
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 201
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PrefaceGessner, Thomas / Schulz, Stefan E. / Körner, Heinrich et al. | 2005
- 204
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Conference organizationGessner, T. et al. | 2005
- 206
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Sponsors| 2005
- 207
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Molecular structures on crystalline metallic surfaces – From STM images to molecular electronicsHietschold, M. / Lackinger, M. / Griessl, S. et al. | 2005
- 215
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High quality strained Si/SiGe substrates for CMOS and optical devicesWeber, J. / Nebrich, L. / Bensch, F. et al. | 2005
- 221
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Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatmentWen, Hua-Chiang / Yang, Koho / Ou, Keng-Liang et al. | 2005
- 228
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Deposition of silver, indium, and magnesium onto organic semiconductor layers: Reactivity, indiffusion and metal morphologySalvan, Georgeta / Paez, Beynor A. / Silaghi, Simona et al. | 2005
- 236
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Deposition temperature determination of HDPCVD silicon dioxide filmsGulleri, G. / Carpanese, C. / Cascarano, C. et al. | 2005
- 242
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Atomic vapor deposition of Ru and RuO2 thin film layers for electrode applicationsManke, C. / Miedl, S. / Boissiere, O. et al. | 2005
- 248
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Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3Fillot, F. / Morel, T. / Minoret, S. et al. | 2005
- 254
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Copper alloy seed integration for reliability improvementBesling, Wim F.A. / Federspiel, X. / Vanypre, T. et al. | 2005
- 261
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Low resistivity tungsten for contact metallizationSmith, Steven / Aouadi, Khaled / Collins, Josh et al. | 2005
- 266
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Tungsten interconnects in the nano-scale regimeSteinhögl, W. / Steinlesberger, G. / Perrin, M. et al. | 2005
- 273
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Deposition and CMP of sub 100nm silver damascene linesEmling, R. / Schindler, G. / Steinlesberger, G. et al. | 2005
- 277
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Electrical and morphological change of Ag–Ni films by annealing in vacuumKawamura, M. / Yamaguchi, M. / Abe, Y. et al. | 2005
- 283
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Manufacturing of Pt-electrode by wet etchingZaborowski, M. / Grabiec, P. / Barcz, A. et al. | 2005
- 289
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Self-annealing and aging effect characterization on copper seed thin filmsBrunoldi, G. / Guerrieri, S. / Alberici, S.G. et al. | 2005
- 296
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Silver metal organic chemical vapor deposition for advanced silver metallizationGao, L. / Härter, P. / Linsmeier, Ch. et al. | 2005
- 301
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Investigation of a Ta–Si–O/Ta–Si–N bilayer system for embedded SAW finger structuresReitz, D. / Heuer, H. / Baunack, S. et al. | 2005
- 307
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Role of local microchemistry and surface structure in electrical resistivity of 50nm electroless films Ag–W–oxygenGlickman, E. / Inberg, A. / Bogush, V. et al. | 2005
- 314
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Structural and surface properties of NiCr thin films prepared by DC magnetron sputtering under variation of annealing conditionsKwon, Yong / Kim, Nam-Hoon / Choi, Gwang-Pyo et al. | 2005
- 321
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Advanced Cu interconnects using air gapsGosset, L.G. / Farcy, A. / de Pontcharra, J. et al. | 2005
- 333
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Precursor chemistry for ULK CVDRouessac, V. / Favennec, L. / Rémiat, B. et al. | 2005
- 341
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Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low-k dielectric materialAimadeddine, M. / Arnal, V. / Farcy, A. et al. | 2005
- 348
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Dual damascene ash development for a VFTL of target k=2.0 integrationWhite, Brian / Knorr, Andreas / Engbrecht, Ward et al. | 2005
- 356
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Novel low-k polycyanurates for integrated circuit (IC) metallizationSchulze, K. / Schuldt, U. / Kahle, O. et al. | 2005
- 362
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Potential of air gap technology by selective ozone/TEOS deposition: Effects of air gap geometry on the dielectric constantStich, A. / Gabric, Z. / Pamler, W. et al. | 2005
- 368
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Mechanical characterization of low-k and barrier dielectric thin filmsChérault, N. / Carlotti, G. / Casanova, N. et al. | 2005
- 374
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Influence of the sidewall diffusion barrier on the transport properties of advanced Cu/low-k interconnectsGuedj, Cyril / Guillaumond, Jean-Frédéric / Arnaud, Lucile et al. | 2005
- 380
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High manufacturability Cu multilevel interconnects featuring hybrid-NCS structureSugiura, I. / Misawa, N. / Otsuka, S. et al. | 2005
- 387
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Computer simulation of fullerene-based ultra-low k dielectricsHermann, H. / Zagorodniy, K. / Touzik, A. et al. | 2005
- 393
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The current limits of the laser-acoustic test method to characterize low-k filmsSchneider, D. / Frühauf, S. / Schulz, S.E. et al. | 2005
- 399
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Effect of plasma treatments on ultra low-k material propertiesHumbert, A. / Mage, L. / Goldberg, C. et al. | 2005
- 405
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Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performanceFrühauf, S. / Himcinschi, C. / Rennau, M. et al. | 2005
- 411
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Lateral solvent diffusion characterization of low k dielectric plasma damage and ALD barrier film closureAbell, Thomas / Schuhmacher, Jorg / Tokei, Zsolt et al. | 2005
- 416
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Study of plasma mechanisms of hybrid a-SiOC:H low-k film deposition from decamethylcyclopentasiloxane and cyclohexene oxideCastex, A. / Favennec, L. / Jousseaume, V. et al. | 2005
- 422
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Impact of dielectric stack and interface adhesion on mechanical properties of porous ultra low-kVitiello, Julien / Fuchsmann, Arno / Chapelon, Laurent-Luc et al. | 2005
- 427
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Impact of reducing resist stripping processes at elevated temperature on ULK and HM materialsBlaschta, F. / Schulz, S.E. / Gessner, T. et al. | 2005
- 434
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The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxideXie, Bo / Muscat, Anthony J. et al. | 2005
- 441
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Ni fully silicided gates for 45nm CMOS applicationsKittl, Jorge A. / Lauwers, Anne / Pawlak, Malgorzata A. et al. | 2005
- 449
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Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technologyJung, Eun Ji / Jung, Sug-Woo / Kim, Hyun-Su et al. | 2005
- 454
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Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applicationsZimmermann, S. / Zhao, Q.T. / Trui, B. et al. | 2005
- 460
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Silicides as contact material for DRAM applicationsFitz, C. / Goldbach, M. / Dupont, A. et al. | 2005
- 467
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Ge effects on silicidationBesser, Paul R. / King, Paul / Paton, Eric et al. | 2005
- 474
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Influence of Al on the growth of NiSi2 on Si(001)Allenstein, F. / Budzinski, L. / Hirsch, D. et al. | 2005
- 479
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Improvement in NiSi/Si contact properties with C-implantationNakatsuka, Osamu / Okubo, Kazuya / Sakai, Akira et al. | 2005
- 485
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Thermal stability of Ni(Pt) silicide films formed on poly-SiDoi, I. / Teixeira, R.C. / Santos, R.E. et al. | 2005
- 492
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Study of thermal stability of nickel silicide by X-ray reflectivityVan Hove, M. / Travaly, Y. / Sajavaara, T. et al. | 2005
- 497
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Nickel-silicide process for ultra-thin-body SOI-MOSFETsSchmidt, M. / Mollenhauer, T. / Gottlob, H.D.B. et al. | 2005
- 503
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Passive on-chip components: Trends and challenges for RF applicationsDecoutere, S. / Carchon, G. / Dehan, M. et al. | 2005
- 514
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Integration of metal insulator metal capacitors (MIM-Caps) with low defectivity into a copper metallizationSchrenk, Michael / Koller, Klaus / Allers, Karl-Heinz et al. | 2005
- 521
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Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitorsThomas, M. / Piquet, J. / Farcy, A. et al. | 2005
- 529
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3D Integration of CMOS transistors with ICV-SLID technologyWieland, Robert / Bonfert, Detlef / Klumpp, Armin et al. | 2005
- 534
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Thermal stresses in 3D IC inter-wafer interconnectsZhang, Jing / Bloomfield, Max O. / Lu, Jian-Qiang et al. | 2005
- 548
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Wide band frequency and in situ characterization of high permittivity insulators (high-k) for high-speed integrated passivesLacrevaz, T. / Fléchet, B. / Farcy, A. et al. | 2005
- 554
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Optimization of shear test for flip chip solder bump using 3-dimensional computer simulationKim, Jong-Woong / Jung, Seung-Boo et al. | 2005
- 561
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Interfacial reactions and joint reliability of Sn–9Zn solder on Cu or electrolytic Au/Ni/Cu BGA substrateLee, Chang-Yong / Yoon, Jeong-Won / Kim, Young-Jig et al. | 2005
- 569
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Effect of substrate metallization on mechanical properties of Sn–3.5Ag BGA solder joints with multiple reflowsKoo, Ja-Myeong / Jung, Seung-Boo et al. | 2005
- 575
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Reliability evaluations of flip chip package under thermal shock testKim, Dae-Gon / Kim, Jong-Woong / Jung, Seung-Boo et al. | 2005
- 581
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Evaluation of lead-free SnAg solder ball deposition and reflow processes for flip chip applicationsHelneder, Johann / Hoyler, Charlotte / Schneegans, Manfred et al. | 2005
- 587
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Impact of introducing CuSiN self-aligned barriers in advanced copper interconnectsChhun, S. / Gosset, L.G. / Casanova, N. et al. | 2005
- 594
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A PVD based barrier technology for the 45nm nodeForster, J. / Gopalraja, P. / Gung, T.J. et al. | 2005
- 600
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Model for the barrier diffusion into Cu interconnects at high temperaturesAubel, Oliver / Hasse, Wolfgang / Hommel, Martina et al. | 2005
- 607
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Investigation of high performance Ta–Si–N/Cu/Ta–Si–N metallization system for SAW devicesPekarčı́ková, M. / Menzel, S. / Reitz, D. et al. | 2005
- 613
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TaN/Ta bilayer barrier characteristics and integration for 90 and 65nm nodesJacquemin, J.-P. / Labonne, E. / Yalicheff, C. et al. | 2005
- 618
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Different SiH4 treatments of CVD TiN barrier layersBonitz, J. / Ecke, R. / Schulz, S.E. et al. | 2005
- 623
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The effect of tungsten and boron on the Cu barrier and oxidation properties of thin electroless cobalt–tungsten–boron filmsEinati, Hila / Bogush, Vadim / Sverdlov, Yelena et al. | 2005
- 629
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Microstructure effect on EM-induced copper interconnect degradation: Experiment and simulationZschech, E. / Sukharev, V. et al. | 2005
- 639
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Characterization of atomic layer deposited nanoscale structure on dense dielectric substrates by X-ray reflectivityTravaly, Y. / Schuhmacher, J. / Hoyas, A. Martin et al. | 2005
- 645
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Reliability studies of narrow Cu linesSchindler, Günther / Penka, Sabine / Steinlesberger, Gernot et al. | 2005
- 650
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Electron back scattered diffraction study of acoustomigration damage in Al/Ti metallization for SAW devicesPekarčı́ková, M. / Menzel, S. / Wendrock, H. et al. | 2005
- 655
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Qualitative and quantitative analysis of acoustomigration effects in SAW-devicesKubat, F. / Ruile, W. / Eberl, C. et al. | 2005
- 660
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Correlation of electromigration defects in small damascene Cu interconnects with their microstructureWendrock, Horst / Mirpuri, Kabir / Menzel, Siegfried et al. | 2005
- 665
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Modeling of residual stresses in thin films deposited by electron beam evaporationGuisbiers, G. / Strehle, S. / Wautelet, M. et al. | 2005
- 670
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A numerical method for calculating the dynamic stress in SAW devicesKubat, F. / Ruile, W. / Rösler, U. et al. | 2005
- 675
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Reservoir effect on electromigration mechanisms in dual-damascene Cu interconnect structuresVairagar, A.V. / Mhaisalkar, S.G. / Meyer, M.A. et al. | 2005
- 680
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Effects of conditioning temperature on polishing pad for oxide chemical mechanical polishing processKim, Nam-Hoon / Choi, Gwon-Woo / Park, Jin-Seong et al. | 2005
- 686
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Empirical modeling of oxide CMP at chip scaleWolf, H. / Streiter, R. / Rzehak, R. et al. | 2005
- 695
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Author Index| 2005
- CO2
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IFC: Editorial Board| 2005
- v
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Table of Contents| 2005