Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 757
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Theory of nanotip formationBilbro, Griff L. et al. | 2002
- 762
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Three-dimensional site control of self-organized InAs quantum dots by in situ scanning tunneling probe-assisted nanolithography and molecular beam epitaxyKohmoto, S. et al. | 2002
- 766
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Morphological evolution and surface and interface structure of aluminum on polyimideLin, Xue-Feng et al. | 2002
- 776
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Effect of polishing pretreatment on the fabrication of ordered nanopore arrays on aluminum foils by anodizationWu, M.T. et al. | 2002
- 783
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Scanning capacitance microscopy measurements using diamond-coated probesYabuhara, Hidehiko et al. | 2002
- 787
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Field electron emission device using silicon nanoprotrusionsSawada, Kazuaki et al. | 2002
- 791
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Importance of fluorine surface diffusion for plasma etching of siliconVerdonck, P. et al. | 2002
- 797
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Advanced transfer system for spin coating film transfer and hot-pressing in planarization technologySato, Norio et al. | 2002
- 802
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Carbon nanotube films grown by laser-assisted chemical vapor depositionRohmund, F. et al. | 2002
- 812
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Quantum transport through one-dimensional aluminum wiresBatra, Inder P. et al. | 2002
- 818
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Spatially selective single-grain silicon films Induced by hydrogen plasma seedingBo, Xiang-Zheng et al. | 2002
- 822
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Atomic force microscopy using single-wall C nanotube probesSnow, E.S. et al. | 2002
- 828
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Characterization of methyl-doped silicon oxide film deposited using FlowfIIITM chemical vapor deposition technologyLu, Hongqiang et al. | 2002
- 834
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Comparative study on alloy cluster formation in Co-Al and Co-Pt systemsKonno, Toyohiko J. et al. | 2002
- 843
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Selective etching of AVAIN structures for metallization of surface acoustic wave devicesEngelmark, F. et al. | 2002
- 849
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Electron-beam double resist process to enhance bright field pattern resolutionChan, Victor W.C. et al. | 2002
- 855
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Simulation and dielectric characterization of reactive dc magnetron cosputtered (Ta2O5)1-x(TiO2)x thin filmsWestlinder, J. et al. | 2002
- 862
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Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurementsLegrand, B. et al. | 2002
- 871
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Thin-film resistor fabrication for InP technology applicationsKopf, R.F. et al. | 2002
- 876
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Protection of In0.25Ga0.75As-GaAs structures during lateral oxidation using an amorphous InGaP layerPickrell, G.W. et al. | 2002
- 880
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Thermal stability of SiO2-CoSi2-polysilicon multilayer structures improved by cavity formationAlberti, A. et al. | 2002
- 885
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Inverse electronic scattering from shifted projections within the Fresnel-Kirchhoff formalismMayer, A. et al. | 2002
- 891
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Development of a data-driven dynamic model for a plasma etching reactorZhang, Haiyang et al. | 2002
- 902
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Deep etch of GaP using high-density plasma for light-emitting diode applicationsWuu, D.S. et al. | 2002
- 909
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Highly cross-linked polycilane as antireflective coating for deep ultraviolet lithography to improve durability during SiO2 etchingSato, Yasuhiko et al. | 2002
- 914
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Ion-graphy implanter with stencil maskNishihashi, T. et al. | 2002
- 918
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Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 mm complementary metal-oxide-semiconductor fabricationKim, Sam-Dong et al. | 2002
- 924
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Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresistHoule, F.A. et al. | 2002
- 932
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Fabrication of micrometer and nanometer scale structures in silica sol-gel films using electron beam writing methodsVisovsky, Nick J. et al. | 2002
- 936
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Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride filmsYamada-Takamura, Y. et al. | 2002
- 940
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Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion abilityLin, Kun-Cheng et al. | 2002
- 946
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Molecular dynamics simulation of sputter trench-filling morphology in damascene processJu, Shin-Pon et al. | 2002
- 956
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Patterning pentacene organic thin film transistorsKymissis, Ioannis et al. | 2002
- 960
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Controlled tuning of periodic morphologies on vicinal Si(111) surfacesSzkutnik, Pierre-David et al. | 2002
- 964
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Photoluminescence characteristics of GainNAs quantum wells annealed at high temperatureNg, T.K. et al. | 2002
- 969
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Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxyOverberg, M.E. et al. | 2002
- 974
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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperaturesBerg, J.A.Van den et al. | 2002
- 984
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Specular ion current measurements as a quantitative, real-time probe of GaAs(001) epitaxial growthRuthe, K.C. et al. | 2002
- 992
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Cluster-ion implantation: An approach to fabricate ultrashallow junctions in siliconLu, Xinming et al. | 2002
- 995
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Nanophase films deposited from a high-rate, nanoparticle beamUrban III, F.K. et al. | 2002
- 1000
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Effects of the polymer residues on via contact resistance after reactive ion etchingKo, Hyoung-Soo et al. | 2002
- 1008
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Freestanding microheaters in Si with high aspect ratio microstructuresTian, W.-C. et al. | 2002
- 1013
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1.3 mm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP-InP-InGaP active regionLei, Po-Hsun et al. | 2002
- 1019
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Etching method for fabricating ultracompact three-dimensional monolithic microwave integrated circuitsSugitani, Suehiro et al. | 2002
- 1026
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Charging-damage-free and precise dielectric etching in pulsed C2F4-CF3I plasmaOhtake, H. et al. | 2002
- 1031
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Modeling and simulation of atomic layer deposition at the feature scaleGobbert, Matthias K. et al. | 2002
- 1044
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Low-energy electron point source microscope as a tool for transport measurements of free-standing nanometer-scale objects: Application to carbon nanotubesDorozhkin, P. et al. | 2002
- 1048
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Reduced pressure chemical vapor deposition of Si1-x-yGexCy-Si and n Si1-yCy-Si heterostructuresLoup, V. et al. | 2002
- 1055
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Etching of polysilicon in inductively coupled Cl2 and HBr discharges. I. Experimental characterization of polysilicon profilesMahorowala, Arpan P. et al. | 2002
- 1064
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Etching of polysilicon in inductively coupled Cl2 and Hbr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kineticsMahorowala, Arpan P. et al. | 2002
- 1077
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Etching of polysilicon in inductively coupled Cl2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenchingMahorowala, Arpan P. et al. | 2002
- 1084
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Etching of polysilicon in inductively coupled Cl2 and HBr discharges. IV. Calculation of feature charging in profile evolutionMahorowala, Arpan P. et al. | 2002
- 1096
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Study of InGaP-GaAs-InGaAs high-barrier gate and heterostructure-channel field-effect transistorsYu, Kuo-Hui et al. | 2002
- 1102
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Growth and evolution of ZnCdSe quantum dotsShan, C.X. et al. | 2002
- 1107
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Selective wet etching of AlGaAs in HF-CrO3 Solutions: Application to vertical taper structures in integrated optoelectronic devicesHuang, Hui et al. | 2002
- 1111
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Effects of the underlayer substrates on copper chemical vapor depositionLin, Cheng-Li et al. | 2002
- 1118
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Sub-50 nm nanopatterning of metallic layers by green pulsed laser combined with atomic force microscopyHuang, S.M. et al. | 2002
- 1126
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Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applicationsJohnson, R.S. et al. | 2002
- 1132
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Brief Reports and Comments - Feasibility of thin film microfabricated hydrogen ion sourcesReuss, Robert H. et al. | 2002
- 1135
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Brief Reports and Comments - Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 KBanerjee, Souri et al. | 2002
- 1139
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Rapid Communications - Investigation of polymethylmethacrylate resist residues using photoelectron microscopyMaximov, I. et al. | 2002
- 1143
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Rapid Communications - Ultrathin nitrided-nanolaminate (Al2O3-ZrO2-Al2O3) for metal-oxide-semiconductor gate dielectric applicationsJeon, Sanghun et al. | 2002
- 1153
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Preface| 2002
- 1154
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Optical characterization of strained InGaAsN-GaAs multiple quantum wellsHéroux, J.B. et al. | 2002
- 1158
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiencyKovsh, A.R. et al. | 2002
- 1163
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Growth of GaInNAs quaternaries using a digital alloy techniqueHong, Y.G. et al. | 2002
- 1167
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Growth and characterization of Ga0.8In0.2(N)As quantum wells with GaNxAs1-x(x<=0.05) barriers by plasma-assisted molecular beam epitaxyGovindaraju, Sridhar et al. | 2002
- 1170
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Substrate preparation and low-temperature boron doped silicon growth on wafer-scale charge-coupled devices by molecular beam epitaxyCalawa, S.D. et al. | 2002
- 1174
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Antimonides - Structural and transport characterization of AlSb-InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptionsSigmund, J. et al. | 2002
- 1178
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Antimonides - Atomistics of III-V semiconductor surfaces: Role of group V pressureGrosse, Frank et al. | 2002
- 1182
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Antimonides - Electrical spin injection into In0.4Ga0.6As-GaAs quantum dots using (Ga,Mn)AsGhosh, S. et al. | 2002
- 1185
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Nanostructures - Low-bias, high-temperature performance of a normal-incidence InAs-GaAs vertical quantum-dot infrared photodetector with a current-blocking barrierStiff-Roberts, A.D. et al. | 2002
- 1188
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Nanostructures - Tailoring mid-and long-wavelength dual response of InAs quantum-dot infrared photodetectors using InxGa1-xAs capping layersKim, Eui-Tae et al. | 2002
- 1192
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Nanostructures - Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxySugaya, Takeyoshi et al. | 2002
- 1196
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Metamorphic and Compliant Growth - High quality GaAs grown on Si-on-insulator compliant substratesPei, C.W. et al. | 2002
- 1200
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Metamorphic and Compliant Growth - Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafersBaklenov, O. et al. | 2002
- 1205
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Metamorphic and Compliant Growth - Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As-In0.75Ga0.25As-InP structuresNaidenkova, M. et al. | 2002
- 1209
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Devices - High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communicationsHoke, W.E. et al. | 2002
- 1213
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Devices - InAs-based bipolar transistors grown by molecular beam epitaxyAverett, K.L. et al. | 2002
- 1217
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Widegap Nitrides - Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxyNg, H.M. et al. | 2002
- 1221
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Widegap Nitrides - Role of low-temperature (200 (degree)C) nitridation in the growth of GaN by plasma-assisted molecular-beam epitaxyNamkoong, Gon et al. | 2002
- 1229
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - High reflectivity and crack-free AlGaN-AIN ultraviolet distributed Bragg reflectorsBhattacharyya, A. et al. | 2002
- 1234
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - Surface and interface characterization of GaN-AlGaN high electron mobility transistor structures by x-ray and atomic force microscopyTorabi, A. et al. | 2002
- 1238
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - Photoreflectance spectroscopy of AlGaAs-GaAs heterostructures with a two-dimensional electron gas systemMéndez-Garcia, V.H. et al. | 2002
- 1243
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - Intraband and interband photocurrent spectroscopy and induced dipole moments of InAs-GaAs(001) quantum dots in n-i-n photodetector structuresChen, Zhonghui et al. | 2002
- 1247
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - Dislocation structure and relaxation kinetics in InGaAs-GaAs heteroepitaxyLynch, C. et al. | 2002
- 1251
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - Kinetics of the heteroepitaxial growth of Ge on Si(001)Yam, V. et al. | 2002
- 1259
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - Vertical ordering in multilayers of self-assembled Ge-Si(001) quantum dotsThanh, Vinh Le et al. | 2002
- 1266
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - Growth and characterization of ferromagnetic Ga1-xMnxAs epilayers on (001) ZnSeChun, S.H. et al. | 2002
- 1270
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Growth and Characterization - High characteristic temperature (T0=243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxyOhno, Yasuhide et al. | 2002
- 1274
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Novel Materials- II-VI - Single-crystal GaN-Gd2O3-GaN heterostructureHong, M. et al. | 2002
- 1278
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Papers from the 20th North American Conference on Molecular Beam Epitaxy - Novel Materials- II-VI - Molecular-beam epitaxy growth and properties of BexZn1-xTe alloys for optoelectronic devicesMaksimov, O. et al. | 2002
- 1282
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AUTHOR INDEX| 2002
- 1283
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CUMULATIVE AUTHOR INDEX| 2002