IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 4776
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Kudos to Our ReviewersGhione, Giovanni et al. | 2017
- 4777
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Golden List of Reviewers for 2017| 2017
- 4812
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Approaching the Quantum Limit of Photodetection in Solid-State PhotodetectorsHall, David / Liu, Yu-Hsin / Yan, Lujiang et al. | 2017
- 4823
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A Compact Quasi-Static Terminal Charge and Drain Current Model for Double-Gate Junctionless Transistors and Its Circuit ValidationJiang, Chunsheng / Liang, Renrong / Xu, Jun et al. | 2017
- 4831
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Electrical Properties of Ge pMOSFETs With Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/DrainZhang, Rui / Li, Junkang / Yu, Xiao et al. | 2017
- 4838
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Comparative Study of Negative Capacitance Ge pFETs With HfZrOx Partially and Fully Covering Gate RegionZhou, Jiuren / Han, Genquan / Li, Jing et al. | 2017
- 4844
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A Pragmatic Approach to Modeling Self-Heating Effects in SiGe HBTsYadav, Shon / Chakravorty, Anjan et al. | 2017
- 4850
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Orientation Engineering for Improved Performance of a Ge-Si Heterojunction Nanowire TFETAlam, Khairul et al. | 2017
- 4856
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Effect of Source–Drain Doping on Subthreshold Characteristics of Short-Channel DG MOSFETsLin, Huang-Hsuan / Taur, Yuan et al. | 2017
- 4861
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Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact ModelMukherjee, Chhandak / Jacquet, Thomas / Fischer, Gerhard G. et al. | 2017
- 4868
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Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped BufferKumar, Sandeep / Gupta, Priti / Guiney, Ivor et al. | 2017
- 4875
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Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access RegionMi, Minhan / Ma, Xiao-Hua / Yang, Ling et al. | 2017
- 4882
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TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic CorrectionsCarapezzi, Stefania / Caruso, Enrico / Gnudi, Antonio et al. | 2017
- 4889
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Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D TransistorsGaneriwala, Mohit D. / Yadav, Chandan / Ruiz, Francisco G. et al. | 2017
- 4897
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Finite-Element Modeling of Retention in Nanocrystal Flash Memories With High- $k$ Interpoly Dielectric StackSolanki, Ravi / Mahajan, Ashutosh / Patrikar, Rajendra et al. | 2017
- 4904
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${Z}^{\textsf {2}}$ -FET as Capacitor-Less eDRAM Cell For High-Density IntegrationNavarro, Carlos / Duan, Meng / Parihar, Mukta Singh et al. | 2017
- 4910
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A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak PathHsieh, E. Ray / Kuo, Yen Chen / Cheng, Chih-Hung et al. | 2017
- 4919
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Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy EffectZeng, Lang / Gao, Tianqi / Zhang, Deming et al. | 2017
- 4928
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Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM ArraysLi, Haitong / Huang, Peng / Gao, Bin et al. | 2017
- 4937
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Vertical Transistor With n-Bridge and Body on Gate for Low-Power 1T-DRAM ApplicationLin, Jyi-Tsong / Lin, Hung-Hsiu / Chen, Yi-Jie et al. | 2017
- 4946
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A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal–Oxide TFTsWu, Jian-Dong / Zhan, Fan / Zhou, Lei et al. | 2017
- 4952
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3-D Dual-Gate Photosensitive Thin-Film Transistor Architectures Based on Amorphous SiliconWang, Kai / Ou, Hai / Chen, Jun et al. | 2017
- 4959
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Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFTLi, Jun / Huang, Chuan-Xin / Zhao, Cheng-Yu et al. | 2017
- 4965
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Origin of Electrical Instabilities in Self-Aligned Amorphous In–Ga–Zn–O Thin-Film TransistorsOn, Nuri / Kang, Youngho / Song, Aeran et al. | 2017
- 4974
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Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film TransistorJo, Jaesung / Kim, Min Gee / Lee, Hyunjae et al. | 2017
- 4980
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Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes With Composition-Graded ConfigurationChang, Jih-Yuan / Chang, Hui-Tzu / Shih, Ya-Hsuan et al. | 2017
- 4985
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Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD SimulationsMarcelot, Olivier / Goiffon, Vincent / Rizzolo, Serena et al. | 2017
- 4992
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A 1.1- $\mu \text{m}$ 33-Mpixel 240-fps 3-D-Stacked CMOS Image Sensor With Three-Stage Cyclic-Cyclic-SAR Analog-to-Digital ConvertersArai, Toshiki / Yasue, Toshio / Kitamura, Kazuya et al. | 2017
- 5001
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Thermal Analysis of a Multichip Light-Emitting Diode Device With Different Chip ArraysChen, Huanting / Chen, Fuchang / Lin, Shuo et al. | 2017
- 5006
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Improved Light Extraction Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Self-Assembled MgO Nanorod ArraysLiu, Han-Yin / Yang, Yun-Chung / Liu, Guan-Jyun et al. | 2017
- 5012
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Doping Optimization in Zn-Diffused GaSb Thermophotovoltaic Cells to Increase the Quantum Efficiency in the Long Wave RangeTang, Liangliang / Fraas, Lewis M. / Liu, Zhuming et al. | 2017
- 5019
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A 0.5erms− Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion GainGe, Xiaoliang / Theuwissen, Albert J. P. et al. | 2017
- 5027
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The ${JV}$ -Characteristic of Intermediate Band Solar Cells With Overlapping Absorption CoefficientsStrandberg, Rune et al. | 2017
- 5034
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Transfer Matrix Formalism-Based Analytical Modeling and Performance Evaluation of Perovskite Solar CellsWahid, Sumaiya / Islam, Mahnaz / Rahman, Md. Sadman Sakib et al. | 2017
- 5042
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A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose WindowDeng, Xiaochuan / Li, Lijun / Wu, Jia et al. | 2017
- 5048
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Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power DevicesYang, Shu / Zhou, Chunhua / Han, Shaowen et al. | 2017
- 5057
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A Physical-Model-Based Metal Charging Design Rule Methodology for Integrated CircuitsLin, Wallace et al. | 2017
- 5065
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Self-Assembly and Electrostatic Carrier Technology for Via-Last TSV Formation Using Transfer Stacking-Based Chip-to-Wafer 3-D IntegrationHashiguchi, Hideto / Fukushima, Takafumi / Hashimoto, Hiroyuki et al. | 2017
- 5073
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Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect MigrationLazarevic, Florian / Leitsmann, Roman / Drescher, Maximilian et al. | 2017
- 5081
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LF Noise Analysis for Trap Recovery in Gate Oxides Using Built-In Joule HeaterJeon, Chang-Hoon / Kim, Choong-Ki / Park, Jun-Young et al. | 2017
- 5087
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Fabrication of Magnetically Tunable Schottky Diode Using Bismuth Ferrite Thin Film on GoldMishra, Ayushi / Sharma, Vinay / Kuanr, Bijoy K. et al. | 2017
- 5093
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Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETsMarquez, Carlos / Rodriguez, Noel / Gamiz, Francisco et al. | 2017
- 5099
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Local Field Effect on Charge-Capture/Emission DynamicsCheung, Kin P. / Veksler, Dmitry / Campbell, Jason P. et al. | 2017
- 5107
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Channel Material Dependence of Wave Function Deformation Scattering in Ultrascaled FinFETsWong, Michael / Holland, Kyle D. / Wang, Ji Kai et al. | 2017
- 5114
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2-D Drift-Diffusion Simulation of Organic Electrochemical TransistorsSzymanski, Marek Zdzislaw / Tu, Deyu / Forchheimer, Robert et al. | 2017
- 5121
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Comparison of Graphene and Zinc Dopant Materials for Organic Polymer Interfacial Layer Between Metal Semiconductor StructureTan, Serhat Orkun et al. | 2017
- 5128
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Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker CathodesPrommesberger, Christian / Bachmann, Michael / Dusberg, Felix et al. | 2017
- 5134
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Electron Gun and Output Coupling System for a 220-/251.5-GHz, 2-MW Triangular Corrugated Coaxial Cavity GyrotronYuvaraj, S. / Illy, Stefan / Kartikeyan, M. V. et al. | 2017
- 5141
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Electromagnetic Modeling of a Complex-Cavity Resonator for the 0.4-THz Second-Harmonic Frequency-Tunable GyrotronMelnikova, Maria M. / Rozhnev, Andrey G. / Ryskin, Nikita M. et al. | 2017
- 5147
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Smooth Wideband Frequency Tuning in Low-Voltage Gyrotron With Cathode-End Power OutputBratman, V. L. / Fedotov, A. E. / Kalynov, Yu. K. et al. | 2017
- 5151
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Design and Experimental Study of 250-W ${W}$ -band Pulsed TWT With 8-GHz BandwidthZhang, Xiaoqing / Feng, Jinjun / Cai, Jun et al. | 2017
- 5157
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Freely Deformable Liquid Metal Grids as Stretchable and Transparent ElectrodesMoon, Yu Gyeong / Koo, Jae Bon / Park, Nae-Man et al. | 2017
- 5163
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Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron NitrideEsqueda, Ivan S. / Tian, He / Yan, Xiaodong et al. | 2017
- 5172
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Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based CircuitsAmat, Esteve / Bausells, Joan / Perez-Murano, Francesc et al. | 2017
- 5181
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Nanowire FET With Corner Spacer for High-Performance, Energy-Efficient ApplicationsSachid, Angada B. / Lin, Hsiang-Yun / Hu, Chenming et al. | 2017
- 5188
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The Effects of the Interdot and Lead-Dot Coupling on the Spin and Charge Current Through a Triple-Quantum-Dot RingMolavi, Mohammad / Faizabadi, Edris et al. | 2017
- 5194
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Stable Self-Assembled Atomic-Switch Networks for Neuromorphic ApplicationsBose, Saurabh K. / Mallinson, Joshua B. / Gazoni, Rodrigo M. et al. | 2017
- 5202
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Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small CircuitsDroulers, Gabriel / Ecoffey, Serge / Pioro-Ladriere, Michel et al. | 2017
- 5209
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Robust and Cascadable Nonvolatile Magnetoelectric Majority LogicJaiswal, Akhilesh / Agrawal, Amogh / Roy, Kaushik et al. | 2017
- 5217
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Reconfigurable Electric Double Layer Doping in an MoS2 Nanoribbon TransistorAlessandri, Cristobal / Fathipour, Sara / Li, Huamin et al. | 2017
- 5223
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Schottky Tunneling Effects in a Tunnel FETHur, Jae / Jeong, Woo Jin / Shin, Mincheol et al. | 2017
- 5230
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Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure With Concentric Circular Electrodes Controlled by Designed Substrate BiasYang, Chang-Feng / Hwu, Jenn-Gwo et al. | 2017
- 5236
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Multidimensional Nano Heat Conduction in Cylindrical TransistorsBen Aissa, Mohamed Fadhel / Nasri, Faouzi / Belmabrouk, Hafedh et al. | 2017
- 5242
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Compact Model for Double-Gate Tunnel FETs With Gate–Drain UnderlapXu, Peng / Lou, Haijun / Zhang, Lining et al. | 2017
- 5249
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Surface Trap-Induced Conductivity Type Switching in Semiconductor Nanowires: Analytical and Numerical AnalysesYesayan, Ashkhen / Pregaldiny, Fabien / Petrosyan, Stepan et al. | 2017
- 5256
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Demonstration of a Novel Two Source Region Tunnel FETBagga, Navjeet / Kumar, Anil / Dasgupta, Sudeb et al. | 2017
- 5263
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Metal Grain Granularity Study on a Gate-All-Around Nanowire FETNagy, Daniel / Indalecio, Guillermo / Garcia-Loureiro, Antonio J. et al. | 2017
- 5270
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Adjusting the Operating Voltage of an Nanoelectromechanical Relay Using Negative CapacitanceChoe, Kihun / Shin, Changhwan et al. | 2017
- 5274
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Analytical Modeling of Parasitic Capacitance in Inserted-Oxide FinFETsSingh, Ramendra / Gupta, Anshul / Gupta, Charu et al. | 2017
- 5279
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Free Carrier Mobility Extraction in FETsJazaeri, Farzan / Pezzotta, Alessandro / Enz, Christian et al. | 2017
- 5284
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Investigation of Electrothermal Behaviors of 5-nm Bulk FinFETJeon, Jongwook / Jhon, Hee-Sauk / Kang, Myounggon et al. | 2017
- 5288
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on 2D Materials for Electronic, Optoelectronic and Sensor Devices| 2017
- 5289
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Call for papers for a Special Issue of IEEE Transactions on Electron Devices on Compact Modeling for Circuit Design| 2017
- 5291
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Introducing IEEE Collabratec| 2017
- 5292
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2017 IndexIEEE Transactions on Electron DevicesVol. 64| 2017
- C1
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Table of contents| 2017
- C2
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IEEE Transactions on Electron Devices publication information| 2017
- C3
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IEEE Transactions on Electron Devices information for authors| 2017