Microelectronic engineering : an international journal of semiconductor manufacturing technology
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 3
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Progress in EB-cell projection lithographySaitou, N. / Moriyama, S. / Okazaki, S. et al. | 1992
- 7
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EL-3+ electron beam direct write systemPfeiffer, H.C. / Butsch, R. / Groves, T.R. et al. | 1992
- 11
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Electron beam maskmaking using photoresistsWeidner, A. / Hahmann, P. et al. | 1992
- 17
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The resolution of electron beam lithographyLutwyche, M.I. et al. | 1992
- 21
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High voltage electron beam lithography of the resolution limits of SAL 601 negative resistClaβen, A. / Kuhn, S. / Straka, J. et al. | 1992
- 25
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Telecentric beam positioning for advanced e-beam lithographyStickel, W. / Langner, G.O. / Petric, P.F. et al. | 1992
- 29
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Proximity effect in high voltage electron beam lithography on Ti/Pt/Au metallizationWebster, M.N. / Verbruggen, A.H. / Romijn, J. et al. | 1992
- 33
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The experimental study of the main technical parameters influencing the possible resolution of electron beam lithographyBönisch, J. / Kudryashov, V. / Burge, R.E. et al. | 1992
- 37
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High contrast marks for e-beam direct write made by reactive ion etchingWebster, M.N. / Verbruggen, A.H. / Jos, H.F.F. et al. | 1992
- 41
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Direct measurement of thermoeffect influence on resist sensitivity in EBLBabin, S.V. / Kostitsh, I. / Svintsov, A.A. et al. | 1992
- 47
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Deep UV lithography for 64 megabit DRAM applicationsTipton, M.C. / Hanratty, M.A. et al. | 1992
- 59
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Registration accuracy in submicron devicesPotenza, Giorgio et al. | 1992
- 69
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Sub-quarter micron phase shifting lithography using the desire process at 248 nm (deep UV)Ronse, K. / Jonckheere, R. / Goethals, A.M. et al. | 1992
- 75
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Phase-shifting mask and top imaging resist for sub-half micron deep-UV lithographyJoubert, O. / Dal'zotto, B. / Picard, B. et al. | 1992
- 79
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The optimum numerical aperture for attenuated phase-shifting masksLin, B.J. et al. | 1992
- 87
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A new chromeless phase mask for the photolithographyBauch, L. / Bauer, J. / Dreger, H. et al. | 1992
- 93
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Increasing resolution and depth of focus in optical microlithography through spatial filtering techniquesHenke, W. / Glaubitz, U. et al. | 1992
- 99
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A DUV focus/exposure latitude study based on various partial coherences with different types of processesHan, Woo-Sung / Goethals, A.M. / Baik, K.H. et al. | 1992
- 105
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Understanding high numerical aperture optical lithographyFlagello, D.G. / Rosenbluth, A.E. / Progler, C. et al. | 1992
- 109
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Improved resolution using the ring-shaped sourcesAsai, S. / Hanyu, I. / Hikosaka, K. et al. | 1992
- 113
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Measurement of optimum focus shift due to heating in high numerical aperture g-line lensesMartin, B. et al. | 1992
- 117
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Microlithography on complex-shaped surfaceGeondzhian, Yu.G. / Korol, V.Yu. / Kuznecov, V.Ya. et al. | 1992
- 123
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Current status and problems of SR lithographyYoshihara, Hideo et al. | 1992
- 131
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A way to 0.1 micron by 1:1 SR lithographyMochiji, K. / Ogawa, T. / Oizumil, H. et al. | 1992
- 135
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Image formation in x-ray lithography: Process optimizationCerrina, F. / Guo, J.Z.Y. / Turner, S. et al. | 1992
- 141
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An advanced x-ray stepper for -μm SR lithographyIshihara, S. / Suzuki, M. / Kanai, M. et al. | 1992
- 145
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Design of an extended image field soft-x-ray projection systemVoorma, H.-J. / Bijkerk, F. et al. | 1992
- 149
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Diffraction in proximity x-ray lithography: Comparing theory and experiment for gratings, lines, and spacesEarly, K. / Schattenburg, M.L. / Olster, D.B. et al. | 1992
- 153
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Complete x-ray lithography processing of an 8-level 0.4 micron CMOS test deviceStaudt-Fischbach, P. / Windbracke, W. / Bernt, H. et al. | 1992
- 157
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Fabrication of sub-100nm linewidth x-ray masks and replication using synchrotron radiation at super-ACORousseaux, F. / Haghiri-Gosnet, A.M. / Kebabi, B. et al. | 1992
- 161
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E-beam written optically transparent x-ray masks: Four levels for an industrial VLSI chip with megabit design rulesEhrlich, Ch. / Breithaupt, B. / Demmeler, R. et al. | 1992
- 167
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Basic study of optical pattern placement accuracy measurement technique in x-ray mask for synchrotron radiation lithographySugihara, T. / Arakawa, T. / Okada, K. et al. | 1992
- 171
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CD control of sub-200 nm x-ray masks using an e-beam writerDi Fabrizio, E. / Luciani, L. / Baciocchi, M. et al. | 1992
- 175
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Diamond membranes for x-ray masksLöchel, B. / Schliwinski, H.-J. / Huber, H.-L. et al. | 1992
- 181
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Evaluation of mechanical distortion of SiC x-ray mask substrateYamaguchi, Yoh-ichi / Syoki, Tsutomu / Sugawara, Minoru et al. | 1992
- 185
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Study of radiation stability in SiN x-ray mask membranes for synchrotron radiation lithographyArakawa, T. / Sugihara, T. / Okada, K. et al. | 1992
- 189
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Annealing behavior of gold absorber in x-ray masksAcosta, R.E. / Johnson, W.A. / Berry, B.S. et al. | 1992
- 193
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In situ temperature and distribution measurements of x-rayTrube, J. / Bernt, H. / Engler, K. et al. | 1992
- 199
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Elastic deformation of x-ray lithography masks during anodic bondingChen, A.C. / Maldonado, J.R. et al. | 1992
- 203
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Overlay performance of an advanced x-ray stepper (XRS 200)Gabeli, F. / Kucinski, A. / Simon, K. et al. | 1992
- 209
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Analysis and optimization of x-ray masks using finite element methodsLaird, D.L. / Lenius, P.E. / Engelstad, R.L. et al. | 1992
- 215
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Structural properties of amorphous SiC films and x-ray membranes by EXAFSHaghiri-Gosnet, A.M. / Rousseaux, F. / Gat, E. et al. | 1992
- 219
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High repetition rate KrF laser plasma x-ray source for microlithographyBijkerk, F. / Louis, E. / Turcu, E.C.I. et al. | 1992
- 223
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Low-stress gold electroplating for x-ray masksChu, W. / Schattenburg, M.L. / Smith, Henry I. et al. | 1992
- 229
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Progress in ion projection lithographyChalupka, A. / Fegerl, J. / Fischer, R. et al. | 1992
- 241
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Sub-0.25-μm ion projection lithography (IPL) in PMMA- and novolak-based resist materials (RAY-PF, RAY-PN, SAL-603)Cekan, E. / Fallmann, W. / Friza, W. et al. | 1992
- 245
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Fabrication of 3.5 GHz surface acoustic wave filters by ion projection lithographyBrünger, W.H. / Buchmann, L.-M. / Kreutzer, M. et al. | 1992
- 249
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FIB repair of clear and opaque defects in x-ray masksPrewett, P.D. / Gentili, M. / Maggiora, R. et al. | 1992
- 257
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Lithographic properties of chemically amplified resists based on copolymers of 4-tert-butoxycarbonyloxystyrene (TBS) and sulfur dioxide (SO2)Novembre, A.E. / Hanson, J.E. / Kometani, J.M. et al. | 1992
- 261
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Chemically amplified negative resist system using acid-catalyzed etherification of carbinolUchino, S. / Katoh, M. / Sakamizu, T. et al. | 1992
- 265
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Positive mode silylation process characterizationLa Tulipe, D.C. / Pomerene, A.T.S. / Simons, J.P. et al. | 1992
- 269
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Surface imaging and dry development for e-beam lithographyBaik, Ki-Ho / Jonckheere, R. / Seabra, A. et al. | 1992
- 275
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Diffusion phenomenon and loss of adhesion in chemically amplified negative resistsAmblard, Gilles / Inard, Alain / Weill, André et al. | 1992
- 279
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Acidity of lithographic materials: Characterization by colorimetric titrationPaniez, P.J. / Demattei, D.C. / Abadie, M.J.M. et al. | 1992
- 283
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Sub-0.5 micron lithography with i-line acid-hardened negative resistsAllen, M.T. / Calabrese, G.S. / Fedynyshyn, T.H. et al. | 1992
- 287
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Homogeneous lithium fluoride films as a high resolution electron beam resistLangheinrich, W. / Vescan, A. / Spangenberg, B. et al. | 1992
- 291
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Partially coherent imaging of alignment marks in photolithographyHild, R. / Nitzsche, G. et al. | 1992
- 295
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Bi-layer resist process for sub-micron optical lithography using silicon containing resistMartin, B. et al. | 1992
- 299
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I-line photoresist evaluation for A 0.5 micron technologyFischer, Thomas / Moritz, Holger et al. | 1992
- 303
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High depth to width aspect ratios in thick positive photoresist layers using near UV lithographyEngelmann, G. / Reichl, H. et al. | 1992
- 307
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Heating effects on self-development properties of nitrocelluloseYasuoka, Y. / Kaneko, H. / Gamo, K. et al. | 1992
- 311
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Ultra-high-resolution negative e-beam resist: AlF3Borsje, H.R. / Jaeger, H.M. / Radelaar, S. et al. | 1992
- 315
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Enhanced photoresist focus latitude through the use of statistical design experimentation in photoresist formulation optimizationBell, K. / Acuna, N. / Dixit, S. et al. | 1992
- 321
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Contrast enhancement of the resist latent image using exposure induced absorption amplification - fundamentals, modelling, and applicabilityPforr, R. / Seltmann, R. / Kunze, D. et al. | 1992
- 327
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In situ measurement for resist thickness control and development endpoint detectionTemmel, G. / Roeder, G. / Ryssel, H. et al. | 1992
- 331
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Passivation effects in novolak based resists during O2-RIEJagdhold, U. / Pelka, J. et al. | 1992
- 337
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Dry etching utilizing showered electron beam assisted etchingMatsui, S. / Watanabe, H. et al. | 1992
- 341
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High rate single substrate polymer etching for multi- chip-modules (MCM) and off-chip-interconnect applicationsBeynen, E. / Roggen, J. / Vanhoof, R. et al. | 1992
- 345
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III–V compound semiconductor reactive ion etching in chlorine and methane containing mixturesDulkin, A.E. / Moshkalyov, S.A. / Pyataev, V.Z. et al. | 1992
- 349
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Nano-resolution tri-level process by downstream- microwave rf-biased etchingRangelow, I.W. et al. | 1992
- 353
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Plasma treated spin-on-glass for submicron tri-level lithographyBorkowicz, Z. / Rangelow, I.W. / Kassing, R. et al. | 1992
- 357
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Lift off for GaAs fet circuit technology using image reversal resistClei, A. / Biblemont, S. / Weygandt, A. et al. | 1992
- 361
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Improvement of resist mask plasma etching durability by plasma chemical polymerizationLimanova, V.F. / Askerov, D.B. / Kovalchuk, A.V. et al. | 1992
- 367
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A numerical approach to the solution of the Boltzmann transport equation for the analysis of hot-electron effects in semiconductorsGnudi, Antonio / Ventura, Davide / Baccarani, Giorgio et al. | 1992
- 377
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Simulation of optical lithography and inspectionNeureuther, Andrew R. et al. | 1992
- 385
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The generalized backscattering coefficient: A novel parameter in electron scattering processesMessina, G. / Paoletti, A. / Santangelo, S. et al. | 1992
- 389
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Curve fitting to Monte Carlo data for the determination of proximity effect correction parametersFretwell, T.A. / Gurung, R. / Jones, P.L. et al. | 1992
- 395
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Computer simulation of resist heating in electron-beam lithographyCui, Z. / Cleaver, J.R.A. / Ahmed, H. et al. | 1992
- 399
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Conceptual models for understanding and minimizing Coulomb interactionsBrodie, A.D. / Meisburger, W.D. et al. | 1992
- 405
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Three dimensional modelling of the e-beam double exposure processLalanne, F. / Amblard, G. / Balladore, J.L. et al. | 1992
- 409
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Simulation of resist development on wafer topography in x-ray lithographyWeiβ, M. / Oertel, H.K. / Krauser, J. et al. | 1992
- 413
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Proxy — A new approach for proximity correction in electron beam lithographyAristov, V.V. / Erko, A.I. / Gaifullin, B.N. et al. | 1992
- 417
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Effect of resist development process on the determination of proximity function in electron lithographyBabin, S.V. / Svintsov, A.A. et al. | 1992
- 423
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FIB repair of integrated circuitsPrewett, P.D. / McGeary, M.L. / Watson, J.G. et al. | 1992
- 427
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Repair of open stencil masks for ion projection lithography by e-beam induced metal depositionKohlmann, K.T. / Buchmann, L.-M. / Brünger, W.H. et al. | 1992
- 431
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Masked ion beam damage isolation for microstructure delineationHornsey, R.I. / Nakazato, K. / Cleaver, J.R.A. et al. | 1992
- 435
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Lithography process control system (perfect)Morisaki, K. / Kawamura, E. et al. | 1992
- 439
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Overlay measurement using the low voltage scanning electron microscopeRosenfield, M.G. / Starikov, A. et al. | 1992
- 445
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Qualification of tools for overlay measurement on processed wafersCanestrari, P. / Carrera, S. / Lietti, C. et al. | 1992
- 451
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Experimental results from a time-of-flight spectrometer for electron beam testingKhursheed, A. / Dinnis, A.R. et al. | 1992
- 455
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Environmental SEM and conventional SEM imaging of electron-sensitive resist: Contrast quality and metrological applicationsPeters, K.-R. / Firstein, L.A. / Noz, A. et al. | 1992
- 459
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Some experiences and results gained on our EBT systemKovác, M. / Bukovinská, S. et al. | 1992
- 463
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Improved minority carrier lifetime performance in silicon for advanced applicationsFalster, R.J. et al. | 1992
- 469
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Laser processing of integrated optical componentsScarmozzino, R. / Osgood, R.M. Jr. / Ruberto, M.N. et al. | 1992
- 473
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Liquid film enhanced laser cleaningZapka, W. / Tam, A.C. / Ayers, G. et al. | 1992
- 479
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YBCO Josephson junctions fabricated by laser ablationNozue, T. / Yasuoka, Y. / Chen, J. et al. | 1992
- 483
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The laser-plotter: A versatile lithographic tool for integrated optics and microelectronicsArnone, C. et al. | 1992
- 489
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Microsystems: Current status and coming opportunitiesObermeier, E. et al. | 1992
- 497
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Open and buried quantum wires: Fabrication and comparison of side wall influencesMenschig, A. / Kübler, P.A. / Rudeloff, R. et al. | 1992
- 501
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Optical analysis of wet chemically etched InGaAs/InP wiresJacobs, B. / Emmerling, M. / Forchel, A. et al. | 1992
- 505
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Lateral thermal stability modulation for the definition of InGaAs/InP quantum wiresOshinowo, J. / Forchel, A. / Dreybrodt, J. et al. | 1992
- 509
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Fabrication and transport properties of anti-dot triangle latticesTakahara, J. / Takagaki, Y. / Gamo, K. et al. | 1992
- 513
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Single electron effect transistor: Fabrication and observationJin, Y. / Etienne, B. / Glattli, C. et al. | 1992
- 517
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Resonant tunnelling in 0-D and 1-D double barrier systemsFaini, G. / Ramdane, A. / Mailly, D. et al. | 1992
- 521
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Requirements for depth of focus determination and control in advanced lithographyDegiorgis, G. / Daraktchiev, I. / Goossens, D. et al. | 1992
- 527
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E-beam process control for the fabrication of T-shaped gates for GaAs MESFETs with dimensions down to 80 nmLuciani, L. / Gentili, M. / Di Fabrizio, E. et al. | 1992
- 531
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Fabrication of sub-20 nm structures in silicon nitride using CHF3/O2 rieWong, T.K.S. / Ingram, S.G. / Moore, D.E. et al. | 1992
- 535
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Lithography for patterning trench contactsGutmann, A. / Czech, G. / Stelz, F.X. et al. | 1992
- 541
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The application of ohmic contacts to nanometric structuresHerbert, P.A.F. / Floyd, L.P. / Braddell, J.I. et al. | 1992
- 547
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Preparation of submicron (NbV)N superconducting thin film strip particle detectorsLuzzi, G. / Nigro, A. / Vaglio, R. et al. | 1992
- 551
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Fabrication of DFB laser gratings using synchrotron radiation proximity lithographyGentili, M. / Grella, L. / Baciocchi, M. et al. | 1992
- 555
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Ar-IBE processing in AlGaInP/GaInPHommel, J. / Moser, M. / Geiger, M. et al. | 1992
- 559
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InGaAs/GaAs nanostructures by implantation induced disorderingPrins, F.E. / Lehr, G. / Fröhlich, E.M. et al. | 1992
- 563
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T-gate and airbridge fabrication for MMICs by combining multi-voltage electron-beam lithography and ion-beam lithographyWoodham, R.G. / Jones, R.M. / Hasko, D.G. et al. | 1992
- 567
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Author index| 1992
- ix
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PrefaceTucciarone, A. / Paoletti, A. / Paroli, P. et al. | 1992
- viii
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Editorial Board| 1992