Nuclear instruments & methods in physics research : a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics - Section B , Beam interactions with materials and atoms
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
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Stopping power determinations by the transmission techniqueRäisänen, J. et al. | 1996
- 7
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Stopping-powers and straggling of 15N ions for nuclear reaction analysis at 6.385 MeVGoppelt-Langer, P. et al. | 1996
- 11
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Stopping power measurements of 1H, 4He and 14N in Si in the energy range of 0.02-1 MeV-amuNiemann, D. et al. | 1996
- 19
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Measured stopping cross sections for hydrogen in a-Si x)C1 - x: H ternary compounds near their maximum valuesLeblanc, L. et al. | 1996
- 24
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Stopping cross sections of C, Al, and Si for 7Li ionsLiu, J. et al. | 1996
- 29
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Study of implantation damage ranges in metals at temperatures ranging from 5 to 300 KFriedland, E. et al. | 1996
- 34
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Rutherford backscattering and channeling study of Au trapped at cavities in siliconWong-Leung, J. et al. | 1996
- 39
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Stopping cross section of protons and deuterons in lithiumniobate near the stopping power maximumPaulini, I. et al. | 1996
- 43
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Measurement of the stopping powers for channeled ions in ion implanted single crystalsKotai, E. et al. | 1996
- 47
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Non-Liouvillean achromatic beam guidance systemsWollnik, H. et al. | 1996
- 52
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CUTBA (Cleaning Up the Tower of Babel of Acronyms) in IBAAmsel, G. et al. | 1996
- 57
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Application of NRA-channeling to study He+ implanted waveguidesWilliams, E.K. et al. | 1996
- 62
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Backscattering spectroscopy developments for the University of Oxford Scanning External Proton Milliprobe (SEPM)Jarjis, R.A. et al. | 1996
- 72
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Emission channeling study of annealing of radiation damage in heavy-ion implanted diamondQuintel, H. et al. | 1996
- 76
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Alpha-emission channeling investigations of the lattice location of Li in GeWahl, U. et al. | 1996
- 82
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In situ observation by RBS of oxygen gettering during Cs sputtering of Si-based materialsCoster, W.De et al. | 1996
- 88
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Characterization of carbon in heteroepitaxial Si1 - x - y)GexCy thin films via combined ion channeling and nuclear resonance analysisHearne, S. et al. | 1996
- 97
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Strained-layer analysis with high-energy ion channelingDijk, P.W.L.van et al. | 1996
- 103
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Measurements of ranges and variances of 1-20 keV N and O ions implanted in Be and C0.83H0.17 by means of RBS with a 4He beam at 350 keVPageau, J.F. et al. | 1996
- 108
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Characterization of BiSrCaCuO thin films by the complementary use of IBA and AES analytical techniquesCliment-Font, A. et al. | 1996
- 113
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Investigation of weakly damaged <110>, <111> and <100> silicon by means of temperature dependent dechanneling measurementsWeber, B. et al. | 1996
- 119
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Diffusing species and growth interfaces during cobalt disilicide formationComrie, C.M. et al. | 1996
- 123
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Ion beam channeling study of cobalt implanted sapphireJároli, E. et al. | 1996
- 128
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Different methods for the determination of damage profiles in Si from RBS-channeling spectra: A comparisonAlbertazzi, E. et al. | 1996
- 133
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SIMS, RBS, and ion channelling studies of 2H+ or 18O+ irradiated LaAlO3 (100) single crystalLi, Y. et al. | 1996
- 139
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Composition analysis of NdxFeyB thin films by RBS and heavy ion ERDAGrötzschel, R. et al. | 1996
- 144
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Hydrogen passivation of Si(100) wafers as templates for low temperature (T < 600C) epitaxyAtluri, V. / Herbots, N. / Dagel, D. et al. | 1996
- 144
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Hydrogen passivation of Si(100) wafers as templates for low temperature (T < 600(degree)C) epitaxyAtluri, V. et al. | 1996
- 151
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Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ionsPetravic, M. et al. | 1996
- 156
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Surface analysis of carbon based plasma facing material using MeV region ion beamAmemiya, S. et al. | 1996
- 162
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Rutherford backscattering spectrometry for the analysis of atmospheric aerosolsKovác, P. et al. | 1996
- 167
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Application of 14N(3He, 4He)13N nuclear reaction to nitrogen depth profiling in metalsWielunski, L.S. et al. | 1996
- 172
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Prompt charged particle activation analysis for light elements determinationGiorginis, G. et al. | 1996
- 176
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Use of large Ge detectors in place of BGO detectors for hydrogen profiling or other particle-gamma NRALanford, W.A. et al. | 1996
- 180
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Nuclear reaction analysis of hydrogen in Li-containing materialDersch, O. et al. | 1996
- 186
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Efficient g-ray detection in ion beam analysisPiel, N. et al. | 1996
- 186
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Efficient gamma-ray detection in ion beam analysisPiel, N. / Schulte, W. H. / Berheide, M. et al. | 1996
- 190
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Use of the 7.6 MeV ^1^6O(,) resonance in studying the anomalous channeling behaviour of YBa~2Cu~3O~7-~x near T~cAndersen, J. U. / Ball, G. C. / Davies, J. A. et al. | 1996
- 190
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Use of the 7.6 MeV 16O(a, a) resonance in studying the anomalous channeling behaviour of YBa2Cu3O 7 - x) near TcAndersen, J.U. et al. | 1996
- 196
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An electrostatic filter for high resolution nuclear reaction analysisHealy, M. et al. | 1996
- 201
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Guidelines to the application of nuclear resonance to quantitative thin film analysisRussell, S.W. et al. | 1996
- 206
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Optimized system for hydrogen detectionZimmerman, R.L. et al. | 1996
- 209
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Conventional depth profiling using narrow nuclear resonancesMiyagawa, Y. et al. | 1996
- 214
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Cross sections for light element analysis by non-Rutherford scatteringZheng, Z.S. et al. | 1996
- 219
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Cross section measurements for the (3He, p) nuclear reaction on B and N between 2 and 4 MeVMcIntyre Jr, L.C. et al. | 1996
- 224
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Cross section of the B(a,p)C nuclear reaction for analytical applicationsGiorginis, G. et al. | 1996
- 224
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Cross section of the B(,p)C nuclear reaction for analytical applicationsGiorginis, G. / Misaelides, P. / Crametz, A. et al. | 1996
- 228
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Backscattering analysis of thin SiO~2 films on Si using ^1^6O(,)^1^6O 3.045 MeV resonanceWatamori, M. / Oura, K. / Hirao, T. et al. | 1996
- 228
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Backscattering analysis of thin SiO2 films on Si using 16O(a, a)16O 3.045 MeV resonanceWatamori, M. et al. | 1996
- 233
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Channeling analysis of oxygen in oxide materials using 16O(a, a)16O resonant backscatteringWatamori, M. et al. | 1996
- 233
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Channeling analysis of oxygen in oxide materials using ^1^6O(, )^1^6O resonant backscatteringWatamori, M. / Oura, K. / Hirao, T. et al. | 1996
- 238
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Deuterium radial redistribution in Zr-liner cladding tubesTakagi, I. et al. | 1996
- 242
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ERDA with very heavy ion beamsAssmann, W. et al. | 1996
- 251
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Light and heavy element profiling using heavy ion beamsGoppelt-Langer, P. et al. | 1996
- 256
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Multiple and double scattering contributions to depth resolution and low energy background in hydrogen elastic recoil detectionWielunski, L.S. et al. | 1996
- 262
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Hydrogen desorption induced by heavy-ions during surface layer analysis with ERDABehrisch, R. et al. | 1996
- 268
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Recoil selection by pulse shape discrimination in elastic recoil detection analysis with a-particles (a-ERDA)Maas, A.J.H. et al. | 1996
- 268
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Recoil selection by pulse shape discrimination in elastic recoil detection analysis with -particles (-ERDA)Maas, A. J. H. / Klein, S. S. / Simons, D. P. L. et al. | 1996
- 274
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Comparison of elastic resonance and elastic recoil detection in the quantification of carbon in SiGeCBair, A.E. et al. | 1996
- 278
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Heavy ion time-of-flight ERDA of high dose metal implanted germaniumDytlewski, N. et al. | 1996
- 283
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Simultaneous multielement ERDA using a simple detector system and extremely heavy ion beamsSiegele, R. et al. | 1996
- 291
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Limits in elastic recoil detection analysis with heavy ionsDollinger, G. et al. | 1996
- 301
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Ion beam analysis of electropolymerized porphyrin layersMarée, C.H.M. et al. | 1996
- 307
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Quantitative depth profiling of light elements by means of the ERD E X B techniqueSchiettekatte, F. et al. | 1996
- 312
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Measurement of hydrogen content in diamond like carbon thin films by ERDAKonishi, Y. et al. | 1996
- 318
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Hydrogen and deuterium profile in homoepitaxially grown CVD diamonds by ERDA methodYagi, H. et al. | 1996
- 322
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Empirical modeling of ion beam-induced hydrogen depletionTurgeon, S. et al. | 1996
- 327
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Evaluation of spectra of energetic ions not fully stopped in DE-Erest telescopesProzesky, V.M. et al. | 1996
- 327
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Evaluation of spectra of energetic ions not fully stopped in cap delta E-E~r~e~s~t telescopesProzesky, V. M. / Huber, H. / Assmann, W. et al. | 1996
- 332
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3D-microERDA microscopy of implanted H-distributions in diamondConnell, S.H. et al. | 1996
- 338
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Depth resolved ion beam analysis of objects of artNeelmeijer, C. et al. | 1996
- 346
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Low energy PIXE: Advantages, drawbacks, and applicationsMiranda, J. et al. | 1996
- 352
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Differential PIXE analysis of Mesoamerican jewelry itemsDemortier, G. et al. | 1996
- 359
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Lead levels in Mexican human teeth from different historical periods using PIXESolis, C. et al. | 1996
- 363
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Analysis of radiation-induced segregation in type 304 stainless steel by PIXE and RBS channelingKawatsura, K. et al. | 1996
- 367
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Determination of lattice displacements in 2 MeV Se+ implanted GaAs by RBS and PIXE channeling experimentsWendler, E. et al. | 1996
- 372
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A compact wavelength-dispersive X-ray spectrometer for particle-induced X-ray emission analysisFurukawa, Y. et al. | 1996
- 377
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PIXE analysis of ancient Chinese Qing dynasty porcelainHuansheng, Cheng et al. | 1996
- 382
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Channeling studies of YBaCuO thin films with combined RBS and PIXEEcker, K.H. et al. | 1996
- 388
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PIXE study of atmospheric aerosols in mountain region of PolandJagielski, J. et al. | 1996
- 392
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The analysis of trace elements in human teeth collected from the Oxfordshire area in the UKLane, D.W. et al. | 1996
- 396
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PIXE studies on artifacts from Saugus Iron WorksNarayan, C. et al. | 1996
- 400
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Soluble and insoluble components of air pollutants scavenged by rain waterKasahara, M. et al. | 1996
- 403
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Mapping of aerosols' elemental distribution in two zones in Romania by PIXE analysisAmemiya, S. et al. | 1996
- 408
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Backscattering studies of 7Li, 12C and 16O ions at energies 3-15 MeVCheng, H.S. et al. | 1996
- 414
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Chemical diagenesis in fossil shells from Baja California, México studied using PIXE and mass spectrometryOliver, A. et al. | 1996
- 414
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Chemical diagenesis in fossil shells from Baja California, Mexico studied using PIXE and mass spectrometryOliver, A. / Solis, C. / Rodriguez-Fernandez, L. et al. | 1996
- 418
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Application of medium energy nuclear microprobe to semiconductor process stepsTakai, M. et al. | 1996
- 423
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High energy single ion hit system combined with heavy ion microbeam apparatusKamiya, T. et al. | 1996
- 426
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Defect imaging and channeling studies using channeling scanning transmission ion microscopyKing, P.J.C. et al. | 1996
- 431
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Laterally resolved crystalline damage in single-point-diamond-turned siliconJeynes, C. et al. | 1996
- 437
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The Debrecen scanning proton microprobe facility and its applications to geological samplesRajta, I. et al. | 1996
- 442
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Design of a new high voltage generator for ion beam analysisIshibashi, K. et al. | 1996
- 447
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Sub-micron microbeam apparatus for high resolution materials analysesKamiya, T. et al. | 1996
- 451
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Off-axis STIM nuclear microprobe analysisSjöland, K.A. et al. | 1996
- 456
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Ion scattering and scanning tunneling microscopy studies of stepped Cu surfacesTaglauer, E. et al. | 1996
- 462
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Coaxial impact collision ion scattering spectroscopy studies of Sb adsorption on the two-domain (100) surface of siliconNoakes, T.C.Q. et al. | 1996
- 467
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Order-disorder phase transition of the Cu3Au(100) surface studied by ToF-ion scatteringHoussiau, L. et al. | 1996
- 473
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Energetic ion impacts on quartz surfaces: A study by atomic force microscopyWilson, I.H. et al. | 1996
- 478
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Channeling study of melting and solidification of lead nanocrystals in aluminiumBourdelle, K.K. et al. | 1996
- 483
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Vibrations of surface atoms studied by NRRABerheide, M. et al. | 1996
- 488
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Surface and sub-surface defects on graphite after single ion impact studied with STMBolse, W. et al. | 1996
- 493
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Thickness of the SiO2-Si interface and composition of silicon oxide thin films: Effect of wafer cleaning proceduresStedile, F.C. et al. | 1996
- 499
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Isotopic tracing of Si during thermal growth of Si3N4 ultrathin filmsBaumvol, I.J.R. et al. | 1996
- 505
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Migration of organic residuals in interlayer oxide to SiO2-Si interfaceKodama, N. et al. | 1996
- 509
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Computer studies of the surface mechanism of preferential sputtering of two-component solids. Ion beam analysis of surface composition in low dose regimeSamoilov, V.N. et al. | 1996
- 517
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Ion-beam characterization of alumina-supported silver catalysts used for ethylene epoxidationHoflund, G.B. et al. | 1996
- 522
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Method for determining the composition and orientation of III-V (001) semiconductor surfacesSung, M.M. et al. | 1996
- 530
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The initial stage of Pb thin film growth on Si(111) surface studied by TOF-ICISSTanaka, Y. et al. | 1996
- 533
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Depth profile analysis of strong metal-support interactions on Rh-TiO2 model catalystsLinsmeier, Ch et al. | 1996
- 541
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Stoichiometric changes of Si, CoSi2 and TiSi2 during low energy oxygen bombardment in combination with oxygen bleed-inBrijs, B. et al. | 1996
- 547
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Characterization of the recovery and recrystallization of SrTiO3 surface by ion channelingWang, F. et al. | 1996
- 552
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Surface structure of sulfur-terminated GaAs by medium energy ion scatteringTakai, M. et al. | 1996
- 556
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Analysis of a thin, silicon-oxide, silicon-nitride multilayer target by time-of-flight medium energy backscatteringWeller, R.A. et al. | 1996
- 560
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ERD-TOF characterization of silicon-compound multilayer and graded-index optical coatingsGujrathi, S.C. et al. | 1996
- 566
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A high resolution magnetic spectrograph for ion beam analysisArnoldbik, W.M. et al. | 1996
- 573
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Time-of-flight medium energy ion scattering study of epitaxial Si-Si1 - xGex superlattice structuresMcConville, C.F. et al. | 1996
- 578
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High resolution RBS study of the growth and the crystalline quality of ultrathin YBaCuO filmsHüttner, D. et al. | 1996
- 584
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Separation of scattered ions and neutrals in medium-energy ion scattering spectroscopyKobayashi, T. et al. | 1996
- 588
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Focusing in high-resolution time-of-flight elastic recoil detection analysisMaas, A.J.H. et al. | 1996
- 593
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Compensation for the energy spread of a Van de Graaff accelerator by using two time-of-flight systemsBergsmann, M. et al. | 1996
- 596
-
Ion beam analysis of diamond-like carbon filmsHirvonen, J.-P. et al. | 1996
- 602
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Analysis of stoichiometry of high-Tc superconducting films by RBS and PIXE methodsSandrik, R. et al. | 1996
- 608
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Ion beam analysis of sialon ceramicsVickridge, I.C. et al. | 1996
- 613
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Ion-beam analysis of silicon carbideLeavitt, J.A. et al. | 1996
- 617
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Channeling-like effects due to the macroscopic structure of porous siliconHajnal, Z. et al. | 1996
- 622
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Ion beam channeling and hyperfine interaction analysis for the characterization of stoichiometry and anti-site population in LiNbO3Kling, A. et al. | 1996
- 626
-
Rutherford backscattering study of thin oxide layers prepared by reactive magnetron sputteringBarradas, N.P. et al. | 1996
- 630
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Heavy ion RBS characterization of multilayer coatings deposited through the sol-gel techniqueAslanoglou, X. et al. | 1996
- 633
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Microstructure and ion beam characterization of heteroepitaxial Si1 - x - yGexCyJacobsson, H. et al. | 1996
- 640
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Analysis of strain in ultra-thin GaAs-In0.2Ga0.8As-GaAs single quantum well structures by channeling techniqueKozanecki, A. et al. | 1996
- 645
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An attempt to make a buried layer of indium in aluminium by ion implantationKruse, N. et al. | 1996
- 650
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Analysis of coated reflective glasses near the surface using IBA techniquesPineda, J.C. et al. | 1996
- 654
-
Channeling experiments on porous silicon before and after implantationBattistig, G. et al. | 1996
- 659
-
Structural transformations in leached uranium dioxideTuros, A. et al. | 1996
- 663
-
Application of ion-beam-analysis techniques to the study of irradiation damage in zirconium alloysHowe, L.M. et al. | 1996
- 670
-
Evolution of the implanted 18O concentration distribution in a YBa2Cu3O7 - d film during rapid thermal annealingLi, Y. et al. | 1996
- 670
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Evolution of the implanted ^1^8O concentration distribution in a YBa~2Cu~3O~7~-~ film during rapid thermal annealingLi, Y. / Kilner, J. A. / Tate, T. J. et al. | 1996
- 676
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On the complementary use of ion beam techniques in the near surface analysis of implanted alloysWätjen, U. et al. | 1996
- 681
-
Retention of nitrogen atoms implanted into carbonJagielski, J. et al. | 1996
- 684
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Channeling analyses of epitaxially grown YB2C3O 7 - x) thin filmQu, J.Z. et al. | 1996
- 688
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287 trapping of implanted hydrogen in type Ia diamondSmallman, C.G. et al. | 1996
- 693
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Enhanced surface hardness in nitrogen-implanted silicon carbideUslu, C. et al. | 1996
- 698
-
Composition analysis of ECR-grown SiO2 and SiOxFy filmsBurkhart, J.H. et al. | 1996
- 704
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Ion beam mixing in ZnSe-CdZnSe strained layer structuresMorton, R. et al. | 1996
- 709
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Lattice location of erbium atoms implanted into siliconKozanecki, A. et al. | 1996
- 714
-
Depth profiles in SiON and AlON thin films produced by ion implantationJacobs, M. et al. | 1996
- 718
-
Channeled ion assisted epitaxial growth of Ge on thin Si substratesSaitoh, K. et al. | 1996
- 724
-
Molecular dynamics simulation of stable defect formation in Si via Coulomb explosionFedotov, S.A. et al. | 1996
- 728
-
Surface disorder production during plasma immersion implantation and high energy ion implantationEl-Sherbiny, M.A. et al. | 1996
- 733
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Scanning electron beam annealing of sputter-deposited titanium on siliconCervera, M. et al. | 1996
- 739
-
Phosphorus ion implantation in type IIA diamondZhang, Z.H. et al. | 1996
- 743
-
High concentration nitrogen ion doping into GaAs for the fabrication of GaAsNShima, T. et al. | 1996
- 748
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Irradiation effects in -SiC studied via RBS-C, Raman-scattering and surface profilingConrad, J. / Roedle, T. / Weber, T. et al. | 1996
- 748
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Irradiation effects in a-SiC studied via RBS-C, Raman-scattering and surface profilingConrad, J. et al. | 1996
- 753
-
Damage and structural modification of CVD diamond films caused by -particlesMikhailov, S. N. / Weber, J. / Baer, Y. et al. | 1996
- 753
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Damage and structural modification of CVD diamond films caused by a-particlesMikhailov, S.N. et al. | 1996
- 758
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Fast position sensitive detection applied to time-of-flight ion scattering and recoil spectroscopy for realtime monitoring of surface composition and crystallographySchultz, J.A. et al. | 1996
- 766
-
In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiationYu, N. et al. | 1996
- 766
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In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 key ion irradiationYu, N. / Levine, T. E. / Sickafus, K. E. et al. | 1996
- 772
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In situ analysis of thin film deposition process using time of flight (TOF) ion beam analysis methodsIm, J. et al. | 1996
- 782
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In-situ Rutherford backscattering design for early SIMOX-SOI metallic screeningAllen, L.P. et al. | 1996
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Committees and Sponsors| 1996
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Editorial| 1996