IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 3115
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Changes to the Editorial BoardVerret, Doug et al. | 2007
- 3116
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Kudos to Our ReviewersVerret, Douglas et al. | 2007
- 3117
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2007 Golden List of Reviewers| 2007
- 3137
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Confidentiality of the Review ProcessJindal, R. P. et al. | 2007
- 3138
-
Design and Fabrication of 4H-SiC RF MOSFETsGudjonsson, G.I. / Allerstam, F. / Sveinbjornsson, E.O. et al. | 2007
- 3138
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Compound Semiconductor Devices - Design and Fabrication of 4H-SiC RF MOSFETsGudjónsson, G.I. et al. | 2007
- 3146
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Compound Semiconductor Devices - Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped SrZrO3 Thin FilmsLin, C.-C. et al. | 2007
- 3146
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Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped SrZrO~3 Thin FilmsLin, C.-C. / Lin, C.-Y. / Lin, M.-H. et al. | 2007
- 3146
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Voltage-Polarity-Independent and High-Speed Resistive Switching Properties of V-Doped $\hbox{SrZrO}_{3}$ Thin FilmsChun-Chieh Lin, / Chih-Yang Lin, / Meng-Han Lin, et al. | 2007
- 3152
-
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic DevicesSarua, A. / Hangfeng Ji, / Hilton, K.P. et al. | 2007
- 3152
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Compound Semiconductor Devices - Thermal Boundary Resistance Between GaN and Substrate in AlGaN-GaN Electronic DevicesSarua, A. et al. | 2007
- 3159
-
Nanoelectronics - Atomistic Modeling of Gate-All-Around Si-Nanowire Field-Effect TransistorsPecchia, A. et al. | 2007
- 3159
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Atomistic Modeling of Gate-All-Around Si-Nanowire Field-Effect TransistorsPecchia, A. / Salamandra, L. / Latessa, L. et al. | 2007
- 3168
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Nanoelectronics - Full-Band Tunneling in High-k Oxide MOS StructuresSacconi, F. et al. | 2007
- 3168
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Full-Band Tunneling in High-$\kappa$ Oxide MOS StructuresSacconi, F. / Jancu, J.M. / Povolotskyi, M. et al. | 2007
- 3177
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Partial Crystallization of $\hbox{HfO}_{2}$ for Two-Bit/Four-Level SONOS-Type Flash MemoryGang Zhang, / Samanta, S.K. / Singh, P.K. et al. | 2007
- 3177
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Partial Crystallization of HfO~2 for Two-Bit/Four-Level SONOS-Type Flash MemoryZhang, G. / Samanta, S.K. / Singh, P.K. et al. | 2007
- 3177
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Nanoelectronics - Partial Crystallization of HfO2 for Two-Bit-Four-Level SONOS-Type Flash MemoryZhang, G. et al. | 2007
- 3186
-
A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel RegionJie Deng, / Wong, H.-S.P. et al. | 2007
- 3186
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Nanoelectronics - A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application -- Part I: Model of the Intrinsic Channel RegionDeng, J. et al. | 2007
- 3195
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Nanoelectronics - A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application -- Part II: Full Device Model and Circuit Performance BenchmarkingDeng, J. et al. | 2007
- 3195
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A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part II: Full Device Model and Circuit Performance BenchmarkingJie Deng, / Wong, H.-S.P. et al. | 2007
- 3206
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Performance Comparisons Between Carbon Nanotubes, Optical, and Cu for Future High-Performance On-Chip Interconnect ApplicationsKyung-Hoae Koo, / Hoyeol Cho, / Kapur, P. et al. | 2007
- 3206
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Nanoelectronics - Performance Comparisons Between Carbon Nanotubes, Optical, and Cu for Future High-Performance On-Chip Interconnect ApplicationsKoo, K.-H. et al. | 2007
- 3216
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Optoelectronics, Displays, and Imaging - Design and Fabrication of Monolithic Distributed Traveling-Wave Photodetectors Integrated With Polymer Optical WaveguidesKim, J. et al. | 2007
- 3216
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Design and Fabrication of Monolithic Distributed Traveling-Wave Photodetectors Integrated With Polymer Optical WaveguidesJunghwan Kim, / Johnson, W.B. / Kanakaraju, S. et al. | 2007
- 3223
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Optoelectronics, Displays, and Imaging - Capacitance-Voltage and Current-Voltage Measurements of Nitride Light-Emitting DiodesChen, N.C. et al. | 2007
- 3223
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Capacitance–Voltage and Current–Voltage Measurements of Nitride Light-Emitting DiodesChen, N.C. / Lien, W.C. / Wang, Y.S. et al. | 2007
- 3229
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Optoelectronics, Displays, and Imaging - CMOS-Based Active Pixel for Low-Light-Level Detection: Analysis and MeasurementsFaramarzpour, N. et al. | 2007
- 3229
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CMOS-Based Active Pixel for Low-Light-Level Detection: Analysis and MeasurementsFaramarzpour, N. / Deen, M.J. / Shirani, S. et al. | 2007
- 3238
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A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT DevicesJyi-Tsong Lin, / Yi-Chuen Eng, et al. | 2007
- 3238
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Optoelectronics, Displays, and Imaging - A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT DevicesLin, J.-T. et al. | 2007
- 3245
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Reversible Degradation of Ohmic Contacts on p-GaN for Application in High-Brightness LEDsMeneghini, M. / Trevisanello, L.-R. / Zehnder, U. et al. | 2007
- 3245
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Optoelectronics, Displays, and Imaging - Reversible Degradation of Ohmic Contacts on p-GaN for Application in High-Brightness LEDsMeneghini, M. et al. | 2007
- 3252
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Optoelectronics, Displays, and Imaging - Silicon Germanium CMOS Optoelectronic Switching Device: Bringing Light to LatchOkyay, A.K. et al. | 2007
- 3252
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Silicon Germanium CMOS Optoelectronic Switching Device: Bringing Light to LatchOkyay, A.K. / Kuzum, D. / Latif, S. et al. | 2007
- 3260
-
Influence of Terrestrial Cosmic Rays on the Reliability of CCD Image Sensors—Part 1: Experiments at Room TemperatureTheuwissen, A.J.P. et al. | 2007
- 3260
-
Optoelectronics, Displays, and Imaging - Influence of Terrestrial Cosmic Rays on the Reliability of CCD Image Sensors -- Part 1: Experiments at Room TemperatureTheuwissen, A.J.P. et al. | 2007
- 3267
-
Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- $k$/Metal Gate Stack Device Reliability and Performance EnhancementTseng Hsing-Huang, / Tobin, P.J. / Kalpat, S. et al. | 2007
- 3267
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Reliability - Defect Passivation With Fluorine and Interface Engineering for Hf-Based High-k-Metal Gate Stack Device Reliability and Performance EnhancementTseng, H.-H. et al. | 2007
- 3276
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Reliability - Stress-Power-Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film TransistorsWang, H. et al. | 2007
- 3276
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Stress Power Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film TransistorsWang, Huaisheng / Wang, Mingxiang / Yang, Zhenyu et al. | 2007
- 3285
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Silicon Devices - A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon FusesDoorn, T.S. et al. | 2007
- 3285
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A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon FusesDoorn, T.S. et al. | 2007
- 3292
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Silicon Devices - Strained Si-SiGe Channel With Buried Si0.99C0.01 for Improved Drivability, Gate Stack Integrity and Noise PerformanceLoh, W.-Y. et al. | 2007
- 3292
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Strained Si/SiGe Channel With Buried Si~0~.~9~9C~0~.~0~1 for Improved Drivability, Gate Stack Integrity and Noise PerformanceLoh, W.-Y. / Zang, H. / Oh, H.-J. et al. | 2007
- 3292
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Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise PerformanceWei-Yip Loh, / Hui Zang, / Hoon-Jung Oh, et al. | 2007
- 3299
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Performance Improvement and Scalability of Nonoverlapped Implantation nMOSFETs With Charge-Trapping Spacers as Nonvolatile MemoriesJeng, E.S. / Chiu Chia-Sung, / Hon Chih-Hsueh, et al. | 2007
- 3299
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Silicon Devices - Performance Improvement and Scalability of Nonoverlapped Implantation nMOSFETs With Charge-Trapping Spacers as Nonvolatile MemoriesJeng, E.S. et al. | 2007
- 3308
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Design and Optimization of FinFETs for Ultra-Low-Voltage Analog ApplicationsKranti, A. / Armstrong, G.A. et al. | 2007
- 3308
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Silicon Devices - Design and Optimization of FinFETs for Ultra-Low-Voltage Analog ApplicationsKranti, A. et al. | 2007
- 3317
-
Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- $k$ Trapping LayerGang Zhang, / Xin-Peng Wang, / Won Jong Yoo, et al. | 2007
- 3317
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Silicon Devices - Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High-k Trapping LayerZhang, G. et al. | 2007
- 3325
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Silicon Devices - A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell TransistorLee, M.J. et al. | 2007
- 3325
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A Proposal on an Optimized Device Structure With Experimental Studies on Recent Devices for the DRAM Cell TransistorMyoung Jin Lee, / Seonghoon Jin, / Chang-Ki Baek, et al. | 2007
- 3336
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Silicon Devices - Quantitative Analysis of 2-D Electrostatic Potential Distributions in 90-nm Si pMOSFETs Using Off-Axis Electron HolographyHan, M.-G. et al. | 2007
- 3336
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Quantitative Analysis of 2-D Electrostatic Potential Distributions in 90-nm Si pMOSFETs Using Off-Axis Electron HolographyMyung-Geun Han, / Fejes, P. / Qianghua Xie, et al. | 2007
- 3342
-
Silicon Devices - A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs -- Part I: Electrothermal Couplings and Full-Chip Package Thermal ModelLin, S.-C. et al. | 2007
- 3342
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A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part I: Electrothermal Couplings and Full-Chip Package Thermal ModelSheng-Chih Lin, / Chrysler, G. / Mahajan, R. et al. | 2007
- 3351
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A Self-Consistent Substrate Thermal Profile Estimation Technique for Nanoscale ICs—Part II: Implementation and Implications for Power Estimation and Thermal ManagementSheng-Chih Lin, / Chrysler, G. / Mahajan, R. et al. | 2007
- 3351
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Silicon Devices - A Self-Consistent Substrate Thermal-Profile-Estimation Technique for Nanoscale ICs -- Part II: Implementation and Implications for Power Estimation and Thermal ManagementLin, S.-C. et al. | 2007
- 3361
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Analysis of Options in Double-Gate MOS Technology: A Circuit PerspectiveCakici, R.T. / Roy, K. et al. | 2007
- 3361
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Silicon Devices - Analysis of Options in Double-Gate MOS Technology: A Circuit PerspectiveCakici, R.T. et al. | 2007
- 3369
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Silicon Devices - A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum EffectsRuiz, F.J.G. et al. | 2007
- 3369
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A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum EffectsGarcia Ruiz, F.J. / Godoy, A. / Gamiz, F. et al. | 2007
- 3378
-
Low-Frequency-Noise Spectroscopy of SIMOX and Bonded SOI WafersKushner, V.A. / Park, K. / Schroder, D.K. et al. | 2007
- 3378
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Solid-State Device Phenomena - Low-Frequency-Noise Spectroscopy of SIMOX and Bonded SOI WafersKushner, V.A. et al. | 2007
- 3383
-
Impact of STI Effect on Flicker Noise in 0.13-μm RF nMOSFETsChan, C.-Y. / Lin, Y.-S. / Huang, Y.-C. et al. | 2007
- 3383
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Impact of STI Effect on Flicker Noise in 0.13-$\mu \hbox{m}$ RF nMOSFETsChih-Yuan Chan, / Yu-Syuan Lin, / Yen-Chun Huang, et al. | 2007
- 3383
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Solid-State Device Phenomena - Impact of STI Effect on Flicker Noise in 0.13-mm RF nMOSFETsChan, C.-Y. et al. | 2007
- 3393
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Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity ModulationUemoto, Y. / Hikita, M. / Ueno, H. et al. | 2007
- 3393
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Solid-State Power and High Voltage - Gate Injection Transistor (GIT) -- A Normally-Off AlGaN-GaN Power Transistor Using Conductivity ModulationUemoto, Y. et al. | 2007
- 3400
-
Design Considerations of Silicon Nanowire BiosensorsNair, P.R. / Alam, M.A. et al. | 2007
- 3400
-
Solid-State Sensors and Actuators - Design Considerations of Silicon Nanowire BiosensorsNair, P.R. et al. | 2007
- 3409
-
BRIEFS - Improved Electronic Performance of HfO2-SiO2 Stacking Gate Dielectric on 4H SiCCheong, K.Y. et al. | 2007
- 3409
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Improved Electronic Performance of HfO~2/SiO~2 Stacking Gate Dielectric on 4H SiCCheong, K.Y. / Moon, J.H. / Park, T.J. et al. | 2007
- 3409
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Improved Electronic Performance of $\hbox{HfO}_{2}/ \hbox{SiO}_{2}$ Stacking Gate Dielectric on 4H SiCKuan Yew Cheong, / Jeong Hyun Moon, / Tae Joo Park, et al. | 2007
- 3414
-
BRIEFS - Current and Temperature Dependent Characteristics of Deep-Ultraviolet Light-Emitting DiodesCao, X.-A. et al. | 2007
- 3414
-
Current and Temperature Dependent Characteristics of Deep-Ultraviolet Light-Emitting DiodesCao, X.A. / LeBoeuf, S.F. et al. | 2007
- 3418
-
Efficiency of Spin-Wave Bus for Information TransmissionKhitun, A. / Nikonov, D.E. / Bao Mingqiang, et al. | 2007
- 3418
-
BRIEFS - Efficiency of Spin-Wave Bus for Information TransmissionKhitun, A. et al. | 2007
- 3422
-
Foveated Dynamic Range of the Pyramidal CMOS Image SensorsSaffih, F. / Hornsey, R.I. et al. | 2007
- 3422
-
BRIEFS - Foveated Dynamic Range of the Pyramidal CMOS Image SensorsSaffih, F. et al. | 2007
- 3426
-
Effect of Fin Angle on Electrical Characteristics of Nanoscale Round-Top-Gate Bulk FinFETsYiming Li, / Chih-Hong Hwang, et al. | 2007
- 3426
-
BRIEFS - Effect of Fin Angle on Electrical Characteristics of Nanoscale Round-Top-Gate Bulk FinFETsLi, Y. et al. | 2007
- 3430
-
BRIEFS - Experimental Observation of Frequency Locking and Noise Reduction in a Self-Injection-Locked MagnetronChoi, J.J. et al. | 2007
- 3430
-
Experimental Observation of Frequency Locking and Noise Reduction in a Self-Injection-Locked MagnetronJin Joo Choi, / Gil Wong Choi, et al. | 2007
- 3433
-
ANNOUNCEMENTS - Call for Papers -- 2008 INEC| 2007
- 3433
-
Special issue on Nanowire Electronics| 2007
- 3435
-
33rd IEEE Photovoltaic Specialists Conference| 2007
- 3436
-
23rd IEEE NVSMW / 3rd ICMTD| 2007
- 3437
-
2007 INDEX| 2007
- 3437
-
2007 Index IEEE Transactions on Electron Devices Vol. 54| 2007
- 3504
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Euroem 2008| 2007
- C1
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Table of contents| 2007
- C2
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IEEE Transactions on Electron Devices publication information| 2007
- C3
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IEEE Transactions on Electron Devices information for authors| 2007