IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1628
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Drain-Engineered TFET With Fully Suppressed Ambipolarity for High-Frequency ApplicationUddin Shaikh, Mohd Rizwan / Loan, Sajad A et al. | 2019
- 1635
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Impact of Punch-through Stop Implants on Channel Doping and Junction Leakage for Ge ${p}$ -FinFET ApplicationsBiswas, Jayeeta / Pradhan, Nilay / Biswas, Dipankar et al. | 2019
- 1642
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Gate-Lifted nMOS ESD Protection Device Triggered by a p-n-p in Series With a DiodeLai, Da-Wei / Sque, Stephen / Peters, Wim et al. | 2019
- 1648
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Optimization Design on Active Guard Ring to Improve Latch-Up Immunity of CMOS Integrated CircuitsChen, Chun-Cheng / Ker, Ming-Dou et al. | 2019
- 1656
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Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped SiKim, Jang Hyun / Kim, Sangwan / Park, Byung-Gook et al. | 2019
- 1662
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NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level ModelingGiering, K.-U. / Puschkarsky, K. / Reisinger, H. et al. | 2019
- 1669
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Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA AmbiencesZhou, Lixing / Wang, Xiaolei / Han, Kai et al. | 2019
- 1675
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The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky DiodesNicholls, Jordan R. / Dimitrijev, Sima / Tanner, Philip et al. | 2019
- 1681
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Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF TechnologyChandrasekar, Hareesh / Uren, Michael J. / Casbon, Michael A. et al. | 2019
- 1688
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Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect TransistorsJiang, Sheng / Lee, Kean Boon / Zaidi, Zaffar H. et al. | 2019
- 1694
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Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate StructureShrestha, Niraj Man / Li, Yiming / Suemitsu, Tetsuya et al. | 2019
- 1699
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Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall ChannelDai, Quan / Son, Dong-Hyeok / Yoon, Young-Jun et al. | 2019
- 1704
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Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-SiC MOS CapacitorsPande, Peyush / Dimitrijev, Sima / Haasmann, Daniel et al. | 2019
- 1710
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Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-StackUrresti, J. / Arith, F. / Olsen, S. et al. | 2019
- 1717
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Enhanced Reconfigurable Physical Unclonable Function Based on Stochastic Nature of Multilevel Cell RRAMLee, Gyo Sub / Kim, Gun-Hwan / Kwak, Kisung et al. | 2019
- 1722
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Adaptive Quantization as a Device-Algorithm Co-Design Approach to Improve the Performance of In-Memory Unsupervised Learning With SNNsShi, Yuhan / Huang, Zhisheng / Oh, Sangheon et al. | 2019
- 1729
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Antifuse OTP Cell in a Cross-Point Array by Advanced CMOS FinFET ProcessKuo, Ren-Jay / Chang, Fu-Cheng / King, Ya-Chin et al. | 2019
- 1734
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Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell StringLin, Wei-Liang / Tsai, Wen-Jer / Cheng, C. C. et al. | 2019
- 1741
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Investigation of the Impact of External Stress on Memory Characteristics by Modifying the Backside of SubstrateOh, Young-Taek / Sim, Jae-Min / Toan, Nguyen Van et al. | 2019
- 1747
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Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel ComputingZhu, Guodong / Chen, Wenchao / Wang, Dawei et al. | 2019
- 1754
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Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET TechnologyWu, Yi-Ting / Ding, Fei / Connelly, Daniel et al. | 2019
- 1760
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Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer DepositionYang, Jun / Zhang, Yongpeng / Qin, Cunping et al. | 2019
- 1766
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Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering MethodWu, Ming-Hung / Lin, Horng-Chih / Li, Pei-Wen et al. | 2019
- 1772
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Effects of Ultraviolet Light on the Dual-Sweep $I$ – $V$ Curve of a-InGaZnO4 Thin-Film TransistorTsao, Yu-Ching / Chang, Ting-Chang / Huang, Shin-Ping et al. | 2019
- 1778
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Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint LithographyRam, Mamidala Saketh / De Kort, Laura / De Riet, Joris et al. | 2019
- 1783
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Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel LayerCho, Min Hoe / Seol, Hyunju / Song, Aeran et al. | 2019
- 1789
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Highly Reliable a-Si:H TFT Gate Driver With Precharging Structure for In-Cell Touch AMLCD ApplicationsLin, Chih-Lung / Lai, Po-Cheng / Lee, Po-Ting et al. | 2019
- 1797
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Small-Signal Compact Circuit Modeling of Group IV Material-Based Heterojunction Phototransistors for Optoelectronic ReceiversKumar, Harshvardhan / Basu, Rikmantra / Gupta, Jyoti et al. | 2019
- 1804
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Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si HeterojunctionMd Foisal, Abu Riduan / Dinh, Toan / Nguyen, Viet Thanh et al. | 2019
- 1810
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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication RegionsPilotto, A. / Palestri, P. / Selmi, L. et al. | 2019
- 1815
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High-Performance Organic Phototransistors With Vertical Structure DesignZhang, Guocheng / Zhong, Jianfeng / Chen, Qizhen et al. | 2019
- 1819
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Computational Modeling of Polycrystalline Silicon on Oxide Passivating Contact for Silicon Solar CellsYounas, Rehan / Imran, Hassan / Shah, Syed Ijlal Hassan et al. | 2019
- 1827
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Temperature Dependence of the Turn-On Delay Time of High-Power Lasers–ThyristorsSoboleva, O. S. / Podoskin, A. A. / Golovin, V. S. et al. | 2019
- 1831
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An Ultralow Turn-Off Loss SOI-LIGBT With a High-Voltage p-i-n Diode Integrated on Field OxideWu, Jiayu / Kong, Moufu / Yi, Bo et al. | 2019
- 1837
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The Test of a High-Power, Semi-Insulating, Linear-Mode, Vertical 6H-SiC PCSSWu, Qilin / Xun, Tao / Zhao, Yuxin et al. | 2019
- 1843
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Selective Electroless Copper Deposition by Using Photolithographic Polymer/Ag NanocompositeRyspayeva, Assel / Jones, Thomas D. A. / Esfahani, Mohammadreza Nekouie et al. | 2019
- 1849
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Analysis of Leakage Mechanisms in AlN Nucleation Layers on p-Si and p-SOI SubstratesZhang, Weihang / Simoen, Eddy / Zhao, Ming et al. | 2019
- 1856
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InAs FinFETs Performance Enhancement by Superacid Surface TreatmentZeng, Yuping / Khandelwal, Sourabh / Shariar, Kazy F. et al. | 2019
- 1862
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Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFETAhn, Dae-Hwan / Yoon, Sang-Hee / Kato, Kimihiko et al. | 2019
- 1868
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Metal Source-/Drain-Induced Performance Boosting of Sub-7-nm Node Nanosheet FETsYoon, Jun-Sik / Jeong, Jinsu / Lee, Seunghwan et al. | 2019
- 1874
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Carrier Lifetime Measurement in Ultrathin FD-SOI Using Virtual DiodesLee, Kyung Hwa / Park, Hyung-Jin / Bawedin, Maryline et al. | 2019
- 1881
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Electrical Switching and Optical Bandgap Studies on Quaternary Ag-Doped Ge–Te–In Thin FilmsRoy, Diptoshi / Varma, G. Sreevidya / Asokan, S. et al. | 2019
- 1887
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Caution: Abnormal Variability Due to Terrestrial Cosmic Rays in Scaled-Down FinFETsKim, Jungsik / Lee, Jeong-Soo / Han, Jin-Woo et al. | 2019
- 1892
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A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ MeasurementsPadovani, Andrea / Kaczer, Ben / Pesic, Milan et al. | 2019
- 1899
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High-Temperature Impact-Ionization Model for 4H-SiCNida, Selamnesh / Grossner, Ulrike et al. | 2019
- 1905
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Dielectrically Modulated Source-Engineered Charge-Plasma-Based Schottky-FET as a Label-Free BiosensorHafiz, Syed Adeebul / Iltesha / Ehteshamuddin, M. et al. | 2019
- 1911
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Flexible Wearable Humidity Sensor Based on Nanodiamond With Fast ResponseYu, Xinglin / Chen, Xiangdong / Yu, Xiang et al. | 2019
- 1917
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A High-Performance Tunable LED-Compatible Current Regulator Using an Integrated Voltage NanosensorWang, Zeheng / Wang, Shengji / Zhang, Zhenwei et al. | 2019
- 1924
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Improving the Properties of L-Ascorbic Acid Biosensor Based on GO/IGZO/Al Using Magnetic BeadsChou, Jung-Chuan / Wu, You-Xiang / Kuo, Po-Yu et al. | 2019
- 1930
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Fine-Tuning Intermolecular and Intramolecular Interactions to Build the Films of Tris(Phthalocyaninato) Rare Earth Complexes and Their Comparative Performances in Ambipolar Gas SensingZhao, Shuai / Kong, Xia / Wang, Xiangyang et al. | 2019
- 1937
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Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated TemperaturesThomas, B. R. / Faramehr, S. / Moody, D. C. et al. | 2019
- 1942
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Platinum Nanoparticles Decorated Graphene Oxide Based Resistive Device for Enhanced Formaldehyde Sensing: First-Principle Study and its Experimental CorrelationManna, Bibhas / Chakrabarti, Indrajit / Guha, Prasanta Kumar et al. | 2019
- 1950
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Investigation of a Low-Impedance Reltron as a Gigawatt HPM SourceMahto, Manpuran / Jain, Pradip Kumar et al. | 2019
- 1954
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Development and Experimental Verification of an XY-Table for the Optimization of the Alignment of High-Power GyrotronsIoannidis, Zisis C. / Avramidis, Konstantinos A. / Gantenbein, Gerd et al. | 2019
- 1960
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A Compact Relativistic Magnetron With Lower Output ModeQin, Fen / Xu, Sha / Lei, Lu-Rong et al. | 2019
- 1965
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A Multiobjective Optimization Design Tool for Traveling-Wave Tubes’ Electron Optics SystemHuang, Tao / Cao, Qiu-Feng / Liu, Jia et al. | 2019
- 1971
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Electrostatic Doping-Based All GNR Tunnel FET: An Energy-Efficient Design for Power ElectronicsZhang, Weixiang / Ragab, Tarek / Basaran, Cemal et al. | 2019
- 1979
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Analysis of Negative-Capacitance Germanium FinFET With the Presence of Fixed Trap ChargesBansal, Monika / Kaur, Harsupreet et al. | 2019
- 1985
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Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling JunctionWang, Hongjuan / Han, Genquan / Jiang, Xiangwei et al. | 2019
- 1990
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SkyLogic—A Proposal for a Skyrmion-Based Logic DeviceMankalale, Meghna G. / Zhao, Zhengyang / Wang, Jian-Ping et al. | 2019
- 1997
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An MoS2-Based Piezoelectric FET: A Computational Study of Material Properties and Device DesignAlidoosty-Shahraki, Moslem / Pourfath, Mahdi / Esseni, David et al. | 2019
- 2004
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Evaluation of NC-FinFET Based Subsystem-Level Logic CircuitsYou, Wei-Xiang / Su, Pin / Hu, Chenming et al. | 2019
- 2010
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Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect TransistorNajam, Faraz / Yu, Yun Seop et al. | 2019
- 2017
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Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access MemoryZhang, He / Kang, Wang / Cao, Kaihua et al. | 2019
- 2023
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Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETsLin, Yen-Kai / Agarwal, Harshit / Kushwaha, Pragya et al. | 2019
- 2028
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Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETsYuan, Zhi Cheng / Gudem, Prasad S. / Wong, Michael et al. | 2019
- 2036
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Enhanced Performance of MSM UV Photodetectors by Molecular Modification of Gallium Nitride Using Porphyrin Organic MoleculesGarg, Manjari / Tak, Bhera Ram / Ramgopal Rao, V. et al. | 2019
- 2040
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Slingshot Pull-In Operation for Low-Voltage Nanoelectromechanical Memory SwitchesChoi, Woo Young / Kwon, Hyug Su et al. | 2019
- 2044
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New Diode-Triggered Silicon-Controlled Rectifier for Robust Electrostatic Discharge Protection at High TemperaturesHou, Fei / Liu, Jizhi / Liu, Zhiwei et al. | 2019
- 2049
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Call for Papers - T-ED special issue on Memory Devices and Technologies for the Next Decade| 2019
- 2051
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Call for papers for a special issue of IEEE Transactions on Electron Devices on "ultra wide band gap semiconductors for power control and conversion"| 2019
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Table of contents| 2019
- C2
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IEEE Transactions on Electron Devices publication information| 2019
- C3
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IEEE Transactions on Electron Devices information for authors| 2019