IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 2296
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Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETsOlsen, S.H. / Escobedo-Cousin, E. / Varzgar, J.B. et al. | 2006
- 1953
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Table of contents| 2006
- 1957
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Special Issue on Advanced Compact Models and 45-nm Modeling Challenges| 2006
- 1957
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FOREWORD - Special Issue on Advanced Compact Models and 45-nm Modeling ChallengesSaha, S.K. et al. | 2006
- 1961
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Characteristics and Modeling of Sub-10-nm Planar Bulk CMOS Devices Fabricated by Lateral Source/Drain Junction ControlWakabayashi, H. / Ezaki, T. / Sakamoto, T. et al. | 2006
- 1961
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SPECIAL ISSUE PAPERS - Characteristics and Modeling of Sub-10-nm Planar Bulk CMOS Devices Fabricated by Lateral Source-Drain Junction Control (Invited Paper)Wakabayashi, H. et al. | 2006
- 1971
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SPECIAL ISSUE PAPERS - Modeling Advanced FET Technology in a Compact Model (Invited Paper)Dunga, M.V. et al. | 2006
- 1971
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Modeling Advanced FET Technology in a Compact ModelDunga, M.V. / Chung-Hsun Lin, / Xuemei Xi, et al. | 2006
- 1979
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PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit SimulationGildenblat, G. / Xin Li, / Wu, W. et al. | 2006
- 1979
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SPECIAL ISSUE PAPERS - PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation (Invited Paper)Gildenblat, G. et al. | 2006
- 1994
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SPECIAL ISSUE PAPERS - HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation (Invited Paper)Miura-Mattausch, M. et al. | 2006
- 1994
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HiSIM2: Advanced MOSFET Model Valid for RF Circuit SimulationMiura-Mattausch, M. / Sadachika, N. / Navarro, D. et al. | 2006
- 2008
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A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion RegionJin He, / Chan, M. / Xing Zhang, et al. | 2006
- 2008
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SPECIAL ISSUE PAPERS - A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion RegionHe, J. et al. | 2006
- 2017
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Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel EffectsSadachika, N. / Kitamaru, D. / Uetsuji, Y. et al. | 2006
- 2017
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SPECIAL ISSUE PAPERS - Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel EffectsSadachika, N. et al. | 2006
- 2025
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A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion AnalysisNavarro, D. / Takeda, Y. / Miyake, M. et al. | 2006
- 2025
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SPECIAL ISSUE PAPERS - A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion AnalysisNavarro, D. et al. | 2006
- 2035
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A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal SimulationsHailing Wang, / Xin Li, / Wu, W. et al. | 2006
- 2035
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SPECIAL ISSUE PAPERS - A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal SimulationsWang, H. et al. | 2006
- 2044
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SPECIAL ISSUE PAPERS - Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity SaturationRoy, A.S. et al. | 2006
- 2044
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Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity SaturationRoy, A.S. / Enz, C.C. / Sallese, J.-M. et al. | 2006
- 2051
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Compact Noise Models for MOSFETsJindal, R.P. et al. | 2006
- 2051
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SPECIAL ISSUE PAPERS - Compact Noise Models for MOSFETs (Invited Paper)Jindal, R.P. et al. | 2006
- 2062
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High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement IssuesDeen, M.J. / Chih-Hung Chen, / Asgaran, S. et al. | 2006
- 2062
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SPECIAL ISSUE PAPERS - High-Frequency Noise of Modern MOSFETS: Compact Modeling and Measurement Issues (Invited Paper)Deen, M.J. et al. | 2006
- 2082
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An Analytic Model to Account for Quantum–Mechanical Effects of MOSFETs Using a Parabolic Potential Well ApproximationJin He, / Chan, M. / Xing Zhang, et al. | 2006
- 2082
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SPECIAL ISSUE PAPERS - An Analytic Model to Account for Quantum-Mechanical Effects of MOSFETs Using a Parabolic Potential Well ApproximationHe, J. et al. | 2006
- 2082
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An Analytic Model to Account for Quantum-Mechanical Effects of MOSFETs Using a Parabolic Potential Well ApproximationHe, J. / Chan, M. / Zhang, X. et al. | 2006
- 2091
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SPECIAL ISSUE PAPERS - Analytical Modeling of Output Conductance in Long-Channel Halo-Doped MOSFETsMudanai, S. et al. | 2006
- 2091
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Analytical Modeling of Output Conductance in Long-Channel Halo-Doped MOSFETsMudanai, S. / Wei-Kai Shih, / Rios, R. et al. | 2006
- 2098
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The Physical Background of JUNCAP2Scholten, A.J. / Smit, G.D.J. / Durand, M. et al. | 2006
- 2098
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SPECIAL ISSUE PAPERS - The Physical Background of JUNCAP2 (Invited Paper)Scholten, A.J. et al. | 2006
- 2108
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SPECIAL ISSUE PAPERS - MOSFET ESD Breakdown Modeling and Parameter Extraction in Advanced CMOS TechnologiesVassilev, V. et al. | 2006
- 2108
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MOSFET ESD Breakdown Modeling and Parameter Extraction in Advanced CMOS TechnologiesVassilev, V. / Lorenzini, M. / Groeseneken, G. et al. | 2006
- 2118
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A Program for Device Model Parameter Extraction from Gate Capacitance and Current of Ultrathin$hboxSiO_2$and High-$kappa$Gate StacksFei Li, / Register, L.F. / Hasan, M.M. et al. | 2006
- 2118
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A Program for Device Model Parameter Extraction from Gate Capacitance and Current of Ultrathin SiO_and High-Gate StacksLi, F. / Register, L. F. / Hasan, M. M. et al. | 2006
- 2118
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SPECIAL ISSUE PAPERS - A Program for Device Model Parameter Extraction from Gate Capacitance and Current of Ultrathin SiO2 and High-k Gate Stacks (Invited Paper)Li, F. et al. | 2006
- 2128
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SPECIAL ISSUE PAPERS - Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs (Invited Paper)In@7iguez, B. et al. | 2006
- 2128
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Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETsIniguez, B. / Fjeldly, T.A. / Lazaro, A. et al. | 2006
- 2143
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Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate-Source/Drain UnderlapKim, S.-H. / Fossum, J. G. / Yang, J.-W. et al. | 2006
- 2143
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Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate–Source/Drain UnderlapSeung-Hwan Kim, / Fossum, J.G. / Ji-Woon Yang, et al. | 2006
- 2143
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SPECIAL ISSUE PAPERS - Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate-Source-Drain Underlap (Invited Paper)Kim, S.-H. et al. | 2006
- 2151
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A Compact Physical Model for Yield Under Gate Length and Body Thickness Variations in Nanoscale Double-Gate CMOSAnanthan, H. / Roy, K. et al. | 2006
- 2151
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SPECIAL ISSUE PAPERS - A Compact Physical Model for Yield Under Gate Length and Body Thickness Variations in Nanoscale Double-Gate CMOSAnanthan, H. et al. | 2006
- 2160
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Impact of Scaling on Analog Performance and Associated Modeling NeedsMurmann, B. / Nikaeen, P. / Connelly, D.J. et al. | 2006
- 2160
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SPECIAL ISSUE PAPERS - Impact of Scaling on Analog Performance and Associated Modeling Needs (Invited Paper)Murmann, B. et al. | 2006
- 2168
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SPECIAL ISSUE PAPERS - Modeling of Variation in Submicrometer CMOS ULSI TechnologiesSpringer, S.K. et al. | 2006
- 2168
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Modeling of Variation in Submicrometer CMOS ULSI TechnologiesSpringer, S.K. / Sungjae Lee, / Ning Lu, et al. | 2006
- 2179
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SPECIAL ISSUE PAPERS - Netlisting and Modeling Well-Proximity EffectsWatts, J. et al. | 2006
- 2179
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Netlisting and Modeling Well-Proximity EffectsWatts, J. / Ke-Wei Su, / Basel, M. et al. | 2006
- 2187
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Scalable Compact Circuit Model for Differential Spiral Transformers in CMOS RFICsWei Gao, / Chao Jiao, / Tao Liu, et al. | 2006
- 2187
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SPECIAL ISSUE PAPERS - Scalable Compact Circuit Model for Differential Spiral Transformers in CMOS RFICsGao, W. et al. | 2006
- 2195
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SPECIAL ISSUE PAPERS - Physics-Based Analysis and Simulation of Phase Noise in OscillatorsHong, S.-M. et al. | 2006
- 2195
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Physics-Based Analysis and Simulation of Phase Noise in OscillatorsSung-Min Hong, / Chan Hyeong Park, / Hong Shick Min, et al. | 2006
- 2202
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Validation of MOSFET model Source-Drain SymmetryMcandrew, C. C. et al. | 2006
- 2202
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SPECIAL ISSUE PAPERS - Validation of MOSFET Model Source-Drain SymmetryMcAndrew, C.C. et al. | 2006
- 2202
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Validation of MOSFET model Source–Drain SymmetryMcAndrew, C.C. et al. | 2006
- 2207
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Compound Semiconductor Devices - Control of Threshold Voltage of AlGaN-GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement ModeCai, Y. et al. | 2006
- 2207
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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement ModeYong Cai, / Yugang Zhou, / Lau, K.M. et al. | 2006
- 2216
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$I$–$V$Characterization of Tunnel Diodes and Multijunction Solar CellsGuter, W. / Bett, A.W. et al. | 2006
- 2216
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Compound Semiconductor Devices - I-V Characterization of Tunnel Diodes and Multijunction Solar CellsGuter, W. et al. | 2006
- 2216
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No Title AvailableGuter, W. / Bett, A. W. et al. | 2006
- 2223
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Compound Semiconductor Devices - Monolithically Integrated Enhancement-Depletion-Mode AlGaN-GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma TreatmentCai, Y. et al. | 2006
- 2223
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Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using$hboxCF_4$Plasma TreatmentYong Cai, / Zhiqun Cheng, / Tang, W.C.W. et al. | 2006
- 2223
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Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using Plasma TreatmentCai, Y. / Cheng, Z. / Tang, W. C. W. et al. | 2006
- 2231
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Correcting the Output Conductance for Self-Heating in InAlAs/InGaAs HBTsWeib, O. / Baureis, P. / Kellmann, N. et al. | 2006
- 2231
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Compound Semiconductor Devices - Correcting the Output Conductance for Self-Heating in InAlAs-InGaAs HBTsWeiss, O. et al. | 2006
- 2237
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Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal ModelingBenbakhti, B. / Rousseau, M. / Soltani, A. et al. | 2006
- 2237
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Compound Semiconductor Devices - Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport-Thermal ModelingBenbakhti, B. et al. | 2006
- 2237
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Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport-Thermal ModelingBenbakhti, B. / Rousseau, M. / Soltani, A. et al. | 2006
- 2243
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The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM CircuitsNiu Jin, / Sung-Yong Chung, / Ronghua Yu, et al. | 2006
- 2243
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Nanoelectronics - The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM CircuitsJin, N. et al. | 2006
- 2250
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Optoelectronics, Displays, and Imaging - Full-Color OLEDs Integrated by Dry Dye PrintingLong, K. et al. | 2006
- 2250
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Full-Color OLEDs Integrated by Dry Dye PrintingLong, K. / Pschenitzka, F. / Lu, M.-H. et al. | 2006
- 2259
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Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication LayerXiangyi Guo, / Beck, A.L. / Zhihong Huang, et al. | 2006
- 2259
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Optoelectronics, Displays, and Imaging - Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication LayerGuo, X. et al. | 2006
- 2266
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Optoelectronics, Displays, and Imaging - Study of Laser-Debonded GaN LEDsChan, C.-P. et al. | 2006
- 2266
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Study of Laser-Debonded GaN LEDsChung-Pui Chan, / Jie Gao, / Tai-Man Yue, et al. | 2006
- 2273
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Reliability - Current Degradation of a-Si:H-SiN TFTs at Room Temperature and Low VoltagesMerticaru, A.R. et al. | 2006
- 2273
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Current Degradation of a-Si:H/SiN TFTs at Room Temperature and Low VoltagesMerticaru, A.R. / Mouthaan, A.J. / Kuper, F.G. et al. | 2006
- 2280
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A New Study on the Degradation Mechanism in Low-Temperature p-Channel Polycrystalline Silicon TFTs Under Dynamic StressToyota, Y. / Matsumura, M. / Hatano, M. et al. | 2006
- 2280
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Reliability - A New Study on the Degradation Mechanism in Low-Temperature p-Channel Polycrystalline Silicon TFTs Under Dynamic StressToyota, Y. et al. | 2006
- 2287
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Silicon Devices - Small-Signal Modeling of SiGe HBTs Using Direct Parameter-Extraction MethodChen, H.-Y. et al. | 2006
- 2287
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Small-Signal Modeling of SiGe HBTs Using Direct Parameter-Extraction MethodHan-Yu Chen, / Kun-Ming Chen, / Guo-Wei Huang, et al. | 2006
- 2296
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Silicon Devices - Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETsOlsen, S.H. et al. | 2006
- 2306
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Equivalent Circuit Description of Threshold Voltage Shift in a-Si:H TFTs From a Probabilistic Analysis of Carrier Population DynamicsSambandan, S. / Nathan, A. et al. | 2006
- 2306
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Silicon Devices - Equivalent Circuit Description of Threshold Voltage Shift in a-Si:H TFTs From a Probabilistic Analysis of Carrier Population DynamicsSambandan, S. et al. | 2006
- 2312
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High-Performance$hboxSrTiO_3$MIM Capacitors for Analog ApplicationsChiang, K.C. / Ching-Chien Huang, / Chen, G.L. et al. | 2006
- 2312
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Silicon Devices - High-Performance SrTiO3 MIM Capacitors for Analog ApplicationsChiang, K.C. et al. | 2006
- 2312
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High-Performance SrTiO_3MIM Capacitors for Analog ApplicationsChiang, K. C. / Huang, C.-C. / Chen, G. L. et al. | 2006
- 2320
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Polysilicon Memory Switching: Electrothermal-Induced OrderHerner, S.B. / Bandyopadhyay, A. / Jahn, C. et al. | 2006
- 2320
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Silicon Devices - Polysilicon Memory Switching: Electrothermal-Induced OrderHerner, S.B. et al. | 2006
- 2328
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Silicon Devices - Temperature Dependence of Impact Ionization in Submicrometer Silicon DevicesMassey, D.J. et al. | 2006
- 2328
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Temperature Dependence of Impact Ionization in Submicrometer Silicon DevicesMassey, D.J. / David, J.P.R. / Rees, G.J. et al. | 2006
- 2335
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The ITFET: A Novel FinFET-Based Hybrid DeviceWeimin Zhang, / Fossum, J.G. / Mathew, L. et al. | 2006
- 2335
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Silicon Devices - The ITFET: A Novel FinFET-Based Hybrid DeviceZhang, W. et al. | 2006
- 2344
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Silicon Devices - A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAMJin, S. et al. | 2006
- 2344
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A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAMSeonghoon Jin, / Myoung Jin Lee, / Jeong-Hyong Yi, et al. | 2006
- 2351
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Silicon Devices - Reliability Comparison of Triple-Gate Versus Planar SOI FETsCrupi, F. et al. | 2006
- 2351
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Reliability Comparison of Triple-Gate Versus Planar SOI FETsCrupi, F. / Kaczer, B. / Degraeve, R. et al. | 2006
- 2358
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Silicon Devices - Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction DepthsKurniawan, O. et al. | 2006
- 2358
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Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction DepthsKurniawan, O. / Ong, V.K.S. et al. | 2006
- 2364
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Silicon Devices - New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional SimulationKumar, M.J. et al. | 2006
- 2364
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New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional SimulationKumar, M.J. / Bahl, H. et al. | 2006
- 2370
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High-Density Reduced-Stack Logic Circuit Techniques Using Independent-Gate Controlled Double-Gate DevicesMeng-Hsueh Chiang, / Keunwoo Kim, / Ching-Te Chuang, et al. | 2006
- 2370
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Solid-State Device Phenomena - High-Density Reduced-Stack Logic Circuit Techniques Using Independent-Gate Controlled Double-Gate DevicesChiang, M.-H. et al. | 2006
- 2378
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A Comparison of MISiC Schottky-Diode Hydrogen Sensors Made by NO,$hboxN_2hboxO$, or$hboxNH_3$NitridationsTang, W.M. / Lai, P.T. / Leung, C.H. et al. | 2006
- 2378
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Solid-State Sensors and Actuators - A Comparison of MISiC Schottky-Diode Hydrogen Sensors Made by NO, N2O, or NH3 NitridationsTang, W.M. et al. | 2006
- 2378
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A Comparison of MISiC Schottky-Diode Hydrogen Sensors Made by NO,N_2 O, or NH_3NitridationsTang, W. M. / Lai, P. T. / Leung, C. H. et al. | 2006
- 2384
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An Approach to Improve the Signal-to-Noise Ratio of Active Pixel Sensor for Low-Light-Level ApplicationsFaramarzpour, N. / Deen, M.J. / Shirani, S. et al. | 2006
- 2384
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Solid-State Sensors and Actuators - An Approach to Improve the Signal-to-Noise Ratio of Active Pixel Sensor for Low-Light-Level ApplicationsFaramarzpour, N. et al. | 2006
- 2392
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A Highly Sensitive Bolometer Structure With an Electrostatic-Actuated Signal BridgeTae-Sik Kim, / Hee Chul Lee, et al. | 2006
- 2392
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Solid-State Sensors and Actuators - A Highly Sensitive Bolometer Structure With an Electrostatic-Actuated Signal BridgeKim, T.-S. et al. | 2006
- 2401
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On-Chip High-$Q$Variable Inductor Using Wafer-Level Chip-Scale Package TechnologyOkada, K. / Sugawara, H. / Ito, H. et al. | 2006
- 2401
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Solid-State Sensors and Actuators - On-Chip High-Q Variable Inductor Using Wafer-Level Chip-Scale Package TechnologyOkada, K. et al. | 2006
- 2407
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REGULAR ISSUE BRIEFS - SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting fmaxRieh, J.-S. et al. | 2006
- 2407
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SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting$f_max = hbox310 hboxGHz$and$hboxBV_rm CEO = hbox2 hboxV$Jae-Sung Rieh, / Khater, M. / Freeman, G. et al. | 2006
- 2407
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SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting f_max = 310 GHz and BV_rm CEO = 2 VRieh, J.-S. / Khater, M. / Freeman, G. et al. | 2006
- 2410
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REGULAR ISSUE BRIEFS - Effects of Kr, N2, and Ar on Address Discharge Time Lag in AC Plasma-Display Panel With High Xenon ContentChoi, K.C. et al. | 2006
- 2410
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Effects of Kr,$hboxN_2$, and Ar on Address Discharge Time Lag in AC Plasma-Display Panel With High Xenon ContentKyung Cheol Choi, / Sang Ho Kim, / Bhum Jae Shin, et al. | 2006
- 2410
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Effects of Kr, N_2, and Ar on Address Discharge Time Lag in AC Plasma-Display Panel With High Xenon ContentChoi, K. C. / Kim, S. H. / Shin, B. J. et al. | 2006
- 2413
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REGULAR ISSUE BRIEFS - Comparison of the DC and Microwave Performance of AlGaN-GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer LayersDesmaris, V. et al. | 2006
- 2413
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Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer LayersDesmaris, V. / Rudzinski, M. / Rorsman, N. et al. | 2006
- 2418
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REGULAR ISSUE BRIEFS - Engineered Barriers With Hafnium Oxide for Nonvolatile ApplicationIrrera, F. et al. | 2006
- 2418
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Engineered Barriers With Hafnium Oxide for Nonvolatile ApplicationIrrera, F. et al. | 2006
- 2423
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COMMENTS AND CORRECTIONS - Corrections to "On the Modeling and Design of Schottky Field-Effect Transistors" and "Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier LoweringVega, R.A. et al. | 2006
- 2423
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Corrections to 'On the Modeling and Design of Schottky Field-Effect Transistors' and 'Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier Lowering'Vega, R. A. et al. | 2006
- 2423
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Corrections to “On the Modeling and Design of Schottky Field-Effect Transistors” and “Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier Lowering”Vega, R.A. et al. | 2006
- 2424
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Spintronics| 2006
- 2424
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Special issue on spintronics| 2006
- 2426
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Special issue on simulation and modeling of nanoelectronics devices| 2006
- 2426
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ANNOUNCEMENTS - Call for Papers -- Special Issue of the IEEE TRANSACTIONS ON ELECTRON DEVICES on Simulation and Modeling of Nanoelectronics Devices| 2006
- 2428
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22nd IEEE Non-Volatile Semiconductor Memory Workshop 2007| 2006
- 2428
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ANNOUNCEMENTS - Call for Papers -- IEEE 2007 NVSMW| 2006
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[Front cover]| 2006
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IEEE Transactions on Electron Devices publication information| 2006
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IEEE Transactions on Electron Devices information for authors| 2006