IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 892
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High-Performance Nitride Vertical Light-Emitting Diodes Based on Cu Electroplating Technical RouteWang, Liancheng / Guo, Enqing / Liu, Zhiqiang et al. | 2016
- 903
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Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETsChen, Chun-Yu / Lin, Jyi-Tsong / Chiang, Meng-Hsueh et al. | 2016
- 910
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Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier InjectionPark, Jun-Young / Moon, Dong-Il / Seol, Myeong-Lok et al. | 2016
- 916
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Optimum pMOS-to-nMOS Width Ratio for Efficient Subthreshold CMOS CircuitsNabavi, Morteza / Ramezankhani, Farhad / Shams, Maitham et al. | 2016
- 925
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Modeling of Distributed Effects in Modern MOS Transistors for Millimeter Wave ApplicationsYavand Hasani, Javad et al. | 2016
- 933
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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate TransistorsElmessary, Muhammad A. / Nagy, Daniel / Aldegunde, Manuel et al. | 2016
- 940
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Quasi-Static Terminal-Charge Model for Symmetric Double-Gate Ferroelectric FETsReddy, Mulaka Haranadha / Jandhyala, Srivatsava et al. | 2016
- 946
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A Modeling Framework for NBTI Degradation Under Dynamic Voltage and Frequency ScalingParihar, Narendra / Goel, Nilesh / Chaudhary, Ankush et al. | 2016
- 954
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Surface Passivation in Empirical Tight BindingHe, Yu / Tan, Yaohua / Jiang, Zhengping et al. | 2016
- 959
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Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETsLin, Xinnan / Zhang, Baili / Xiao, Ying et al. | 2016
- 966
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2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETsGoel, Ekta / Kumar, Sanjay / Singh, Kunal et al. | 2016
- 974
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Performance and Device Design Based on Geometry and Process Considerations for 14/16-nm Strained FinFETsMd Rezali, Fazliyatul Azwa / Othman, Nurul Aida Farhana / Mazhar, Maisarah et al. | 2016
- 982
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Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n DiodesNavarro, Carlos / Bawedin, Maryline / Andrieu, Francois et al. | 2016
- 990
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Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic ModelBhardwaj, Shubhendu / Nahar, Niru K. / Rajan, Siddharth et al. | 2016
- 997
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Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon SubstrateHu, Jie / Stoffels, Steve / Lenci, Silvia et al. | 2016
- 1005
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Temperature-Dependent DC and Small-Signal Analysis of AlGaAs/InGaAs pHEMT for High-Frequency ApplicationsAbdul Alim, Mohammad / Rezazadeh, Ali A. et al. | 2016
- 1013
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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTsAminbeidokhti, Amirhossein / Dimitrijev, Sima / Kumar Hanumanthappa, Anil et al. | 2016
- 1020
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InGaAs Quantum-Well MOSFET Arrays for Nanometer-Scale Ohmic Contact CharacterizationLin, J. / Antoniadis, D. A. / del Alamo, J. A. et al. | 2016
- 1027
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Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain StructureGoh, Kian-Hui / Yadav, Sachin / Low, Kain Lu et al. | 2016
- 1034
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Asymmetric Underlapped Sub-10-nm n-FinFETs for High-Speed and Low-Leakage 6T SRAMsAkkala, Arun Goud / Venkatesan, Rangharajan / Raghunathan, Anand et al. | 2016
- 1041
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Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel OperationKwon, Dae Woong / Kim, Wandong / Kim, Do-Bin et al. | 2016
- 1047
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Z-Interference and Z-Disturbance in Vertical Gate-Type 3-D NANDYeh, Teng-Hao Elton / Chen, Wei-Chen / Hsu, Tzu-Hsuan Bruce et al. | 2016
- 1054
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Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy BarrierSong, Ji Hun / Oh, Nuri / Anh, Byung Du et al. | 2016
- 1059
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An Explicit Physics-Based $I$ – $V$ Model for Surrounding-Gate Polysilicon TransistorsYu, Fei / Deng, Wanling / Huang, Junkai et al. | 2016
- 1066
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Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg ReflectorsKim, Eungtaek / Jang, Woo Jae / Kim, Woohyun et al. | 2016
- 1072
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Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering TechniqueXu, Xin / Zhang, Letao / Shao, Yang et al. | 2016
- 1078
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Stable and High-Performance Indium Oxide Thin-Film Transistor by Ga DopingKim, Youn Goo / Kim, Taehun / Avis, Christophe et al. | 2016
- 1085
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Fabrication of High-Performance Bridged-Grain Polycrystalline Silicon TFTs by Laser Interference LithographyDeng, Sunbin / Chen, Rongsheng / Zhou, Wei et al. | 2016
- 1091
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A Simulation Study of Carrier Transport Affected by Local Defects in Amorphous InGaZnO Thin-Film TransistorsHsu, Chih-Chieh / Chen, Yu-Ting et al. | 2016
- 1099
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Design Impact on Charge Transfer Inefficiency of Surface CCD on CMOS Devices: TCAD and Characterization StudyMarcelot, Olivier / Molina, Romain / Bouhier, Matthieu et al. | 2016
- 1105
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Digital Silicon Photomultipliers With OR/XOR Pulse Combining TechniquesGnecchi, Salvatore / Dutton, Neale A. W. / Parmesan, Luca et al. | 2016
- 1111
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Performance of NUV-HD Silicon Photomultiplier TechnologyPiemonte, Claudio / Acerbi, Fabio / Ferri, Alessandro et al. | 2016
- 1117
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Effect of Reassembled Remote Phosphor Geometry on the Luminous Efficiency and Spectra of White Light-Emitting Diodes With Excellent Color Rendering PropertyYing, Shang-Ping / Chien, Huan-Yu et al. | 2016
- 1122
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GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon RecyclingChen, Fu-Bang / Sheu, Jinn-Kong / Yen, Wei-Yu et al. | 2016
- 1128
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3-D Microlens Phosphor With Curvatures Manufactured by Imprinting for Chip-on-Board Light-Emitting DiodesXiao, Hua / Shih, Tien-Mo / Guo, Zi-Quan et al. | 2016
- 1134
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A 0.5 V, 14.28-kframes/s, 96.7-dB Smart Image Sensor With Array-Level Image Signal Processing for IoT ApplicationsYin, Chin / Chiu, Chin-Fong / Hsieh, Chih-Cheng et al. | 2016
- 1141
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Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1–xN-Based UV Light-Emitting DiodesShih, Ya-Hsuan / Chang, Jih-Yuan / Sheu, Jinn-Kong et al. | 2016
- 1148
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The Design of Two-Step-Down Aging Test for LED Lamps Under Temperature StressHao, Jian / Sun, Qiang / Xu, Zhijun et al. | 2016
- 1154
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Low Reverse Recovery Charge 30 V Power MOSFET With Double Epi Structure for DC–DC ConvertersHirao, Takashi / Hashimoto, Takayuki et al. | 2016
- 1161
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Further Study of the U-Shaped Channel SOI-LIGBT With Enhanced Current Density for High-Voltage Monolithic ICsZhu, Jing / Zhang, Long / Sun, Weifeng et al. | 2016
- 1168
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Wideband Modeling and Characterization of Differential Through-Silicon Vias for 3-D ICsZhao, Wen-Sheng / Zheng, Jie / Liang, Feng et al. | 2016
- 1176
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Analysis of Signal Propagation Through TSVs Within Distilled Water for Liquid-Cooled MicrosystemsOh, Hanju / May, Gary S. / Bakir, Muhannad S. et al. | 2016
- 1182
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An Analytical Capacitance Model for Through-Silicon Vias in Floating Silicon SubstrateWeerasekera, Roshan / Katti, Guruprasad / Dutta, Rahul et al. | 2016
- 1189
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Thermal Transport in Single-Layer MoS2 and Black Phosphorus TransistorsLiu, Leitao / Guo, Jing et al. | 2016
- 1195
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A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions—Part I: Large-Signal SensitivityDonati Guerrieri, Simona / Bonani, Fabrizio / Bertazzi, Francesco et al. | 2016
- 1202
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A Unified Approach to the Sensitivity and Variability Physics-Based Modeling of Semiconductor Devices Operated in Dynamic Conditions. Part II—Small-Signal and Conversion Matrix SensitivityDonati Guerrieri, Simona / Bonani, Fabrizio / Bertazzi, Francesco et al. | 2016
- 1209
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETsSeoane, Natalia / Indalecio, Guillermo / Aldegunde, Manuel et al. | 2016
- 1217
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Numerical Simulation of Temperature–Voltage Relation in Electrical Contacts and Correction of Classical Kohlrausch’s EquationRen, Wanbin / Wei, Jianmin / Meng, Xiangxing et al. | 2016
- 1225
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Full-Chip Power Supply Noise Time-Domain Numerical Modeling and Analysis for Single and Stacked ICsZheng, Li / Zhang, Yang / Bakir, Muhannad S. et al. | 2016
- 1232
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First Principle Analysis of (10-Boranylanthracene-9-yl)borane-Based Molecular Single-Electron Transistor for High-Speed Low-Power ElectronicsSanthiBhushan, Boddepalli / Khan, Mohammad Shahzad / Srivastava, Anurag et al. | 2016
- 1239
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Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film TransistorsGiusi, G. / Giordano, O. / Scandurra, G. et al. | 2016
- 1246
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Evaluation of Aerosol, Superfine Inkjet, and Photolithography Printing Techniques for Metallization of Application Specific Printed Electronic CircuitsMashayekhi, Mohammad / Winchester, Lee / Evans, Louise et al. | 2016
- 1254
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Charge Transport in Deep and Shallow States in a High-Mobility Polymer FETKim, Seohee / Ha, Tae-Jun / Sonar, Prashant et al. | 2016
- 1260
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CMOS-SOI-MEMS Thermal Antenna and Sensor for Uncooled THz ImagingSvetlitza, Alexander / Blank, Tanya / Stolyarova, Sara et al. | 2016
- 1266
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Performance Improvement of Pd/ZnO-NR/Si MIS Gas Sensor Device in Capacitive Mode: Correlation With Equivalent-Circuit ElementsDutta, Koushik / Banerjee, Nabaneeta / Mishra, Himakshi et al. | 2016
- 1274
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Preconditioning Procedure for the Better Estimation of the Long-Term Lifetime in Microelectromechanical SwitchesBarbato, Marco / Cester, Andrea / Mulloni, Viviana et al. | 2016
- 1281
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Distributed Parameter Modeling of Cantilevered- d -Mode Piezoelectric Energy HarvestersKashyap, Richik et al. | 2016
- 1281
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Distributed Parameter Modeling of Cantilevered- $d_{33}$ -Mode Piezoelectric Energy HarvestersKashyap, Richik / Lenka, Trupti Ranjan / Baishya, Srimanta et al. | 2016
- 1288
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Frequency Stabilization of a 0.67-THz Gyrotron by Self-Injection LockingMelnikova, Maria M. / Rozhnev, Andrey G. / Ryskin, Nikita M. et al. | 2016
- 1294
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Characteristics Study of $3\pi $ Stopbands of Folded Waveguide Slow-Wave Structures in $V$ -Band Traveling-Wave TubesLiu, Shishuo / Cai, Jun / Feng, Jinjun et al. | 2016
- 1299
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Selectivity Properties of Coaxial Gyrotron Cavities With Mode Converting CorrugationsIoannidis, Zisis C. / Avramidis, Konstantinos A. / Tigelis, Ioannis G. et al. | 2016
- 1307
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Experimental Demonstration of a Tunable Load-Limited Magnetically Insulated Transmission Line OscillatorFan, Yuwei / Wang, Xiaoyu / Li, Guolin et al. | 2016
- 1312
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Thermal Analysis of Sheet Beam Gun for the Sheet Beam Traveling Wave TubeJiang, Wei / Wang, Jianxun / Luo, Yong et al. | 2016
- 1317
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Particle-in-Cell Demonstration of the Effect of Voltage Rise Time on Phase Synchronization in Two Parallel Relativistic Backward-Wave OscillatorsXiao, Renzhen / Wang, Yue / Deng, Yuqun et al. | 2016
- 1322
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Small Signal Treatment of a 94-GHz Helical Waveguide TWTHenke, Heino et al. | 2016
- 1326
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CeB6: Emission Performance and Uniformity Compared With LaB6 for Thermionic RF GunsBakr, Mahmoud / Kawai, Masayuki / Kii, Toshiteru et al. | 2016
- 1333
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Spaced Bitter Solenoid Design for a Continuous Wave 95-GHz GyrotronBauer, Yedidya / Einat, Moshe et al. | 2016
- 1340
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Electron Back Scattering in CNTFETsBejenari, Igor / Claus, Martin et al. | 2016
- 1346
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3-D Percolative Model-Based Multiscale Simulation of Randomly Aligned Networks of Carbon NanotubesColasanti, Simone / Deep Bhatt, Vijay / Abdelhalim, Ahmed et al. | 2016
- 1352
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An Analytical Model to Estimate FinFET’s $V_{T}$ Distribution Due to Fin-Edge RoughnessMittal, S. / Shekhawat, A. S. / Ganguly, U. et al. | 2016
- 1352
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An Analytical Model to Estimate FinFET's V Distribution Due to Fin-Edge RoughnessMittal, S et al. | 2016
- 1359
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Modeling and Evaluation of Topological Insulator/Ferromagnet Heterostructure-Based MemoryReza, Ahmed Kamal / Fong, Xuanyao / Azim, Zubair Al et al. | 2016
- 1368
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Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped ChargesYesayan, Ashkhen / Jazaeri, Farzan / Sallese, Jean-Michel et al. | 2016
- 1375
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Optimization of Design Parameters in Dual- $\kappa $ Spacer-Based Nanoscale Reconfigurable FET for Improved PerformanceBhattacharjee, Abhishek / Dasgupta, Sudeb et al. | 2016
- 1383
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InGaZnO Thin-Film Transistors With Coplanar Control Gates for Single-Device Logic ApplicationsHu, S. G. / Liu, P. / Li, H. K. et al. | 2016
- 1388
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Threshold Logic With Electrostatically Formed NanowiresFriedman, Joseph S. / Godkin, Andrey / Henning, Alex et al. | 2016
- 1392
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Atypical Voltage Transitions in FinFET Multistage Circuits: Origin and SignificancePandey, Archana / Kumar, Harsh / Manhas, S. K. et al. | 2016
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Table of contents| 2016
- C2
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IEEE Transactions on Electron Devices publication information| 2016
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IEEE Transactions on Electron Devices information for authors| 2016
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Blank page| 2016