IEEE Transactions on Nuclear Science
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
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2002 IEEE Nuclear Science Symposium (NSS) and Symposium on Nuclear Power Systems| 2003
- 1
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Conference author index| 2003
- 1762
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2003 nuclear and space radiation effects conference comments by the general chairmanJohnston, A.H. et al. | 2003
- 1764
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2003 special nsrec issue of the IEEE transactions on nuclear science comments by the guest editorKinnison, J.D. et al. | 2003
- 1765
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2003 special NSREC issue of the IEEE transactions on nuclear science list of reviewers| 2003
- 1767
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2003 IEEE nuclear and space radiation effects conference awards chairman's commentsHopkinson, G.R. et al. | 2003
- 1769
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2003 IEEE nuclear and space radiation effects conference outstanding conference paper awardMcMorrow, D. / Lotshaw, W.T. / Melinger, J.S. et al. | 2003
- 1772
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In Memoriam George J. BruckerStassinopoulos, E.G. et al. | 2003
- 1772
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OBITUARIES - In Memoriam George J. BruckerStassinopoulos, E.G. et al. | 2003
- 1773
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In Memoriam James R. Coss| 2003
- 1773
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OBITUARIES - In Memoriam James R. Coss| 2003
- 1774
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OBITUARIES - In Memoriam Douglas G. MillwardJohnston, A.H. et al. | 2003
- 1774
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In Memoriam Douglas George MillwardJohnston, A. et al. | 2003
- 1775
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OBITUARIES - In Memoriam Charles T. Self| 2003
- 1775
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In Memoriam Charles T. Ty Self| 2003
- 1776
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Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFETGouker, P. / Burns, J. / Wyatt, P. et al. | 2003
- 1776
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DEVICES AND INTEGRATED CIRCUITS - Substrate Removal and BOX Thinning Effects on Total Dose Response of FDSOI NMOSFETGouker, P. et al. | 2003
- 1784
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DEVICES AND INTEGRATED CIRCUITS - Passivation Layers for Reduced Total Dose Effects and ELDRS in Linear Bipolar DevicesShaneyfelt, M.R. et al. | 2003
- 1784
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Passivation layers for reduced total dose effects and ELDRS in linear bipolar devicesShaneyfelt, M.R. / Pease, R.L. / Maher, M.C. et al. | 2003
- 1791
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Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistorsXinwen Hu, / Karmarkar, A.P. / Bongim Jun, et al. | 2003
- 1791
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DEVICES AND INTEGRATED CIRCUITS - Proton-Irradiation Effects on AlGaN-AlN-GaN High Electron Mobility TransistorsHu, X. et al. | 2003
- 1797
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DEVICES AND INTEGRATED CIRCUITS - Super-Radiation Hard Particle Tracking at the CERN SLHCRahman, M. et al. | 2003
- 1797
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Super-radiation hard particle tracking at the CERN SLHCRahman, M. / Bates, R. / Blue, A. et al. | 2003
- 1805
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The impact of gamma irradiation on SiGe HBTs operating at cryogenic temperaturesCressler, J.D. / Krithivasan, R. / Sutton, A.K. et al. | 2003
- 1805
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DEVICES AND INTEGRATED CIRCUITS - The Impact of Gamma Irradiation on SiGe HBTs Operating at Cryogenic TemperaturesCressler, J.D. et al. | 2003
- 1811
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DEVICES AND INTEGRATED CIRCUITS - Proton Tolerance of Third-Generation, 0.12 mm 185 GHz SiGe HBTsLu, Y. et al. | 2003
- 1811
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Proton tolerance of third-generation, 0.12 /spl mu/m 185 GHz SiGe HBTsYuan Lu, / Cressler, J.D. / Krithivasan, R. et al. | 2003
- 1816
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Using proton irradiation to probe the origins of low-frequency noise variations in SiGe HBTsZhenrong Jin, / Johansen, J.A. / Cressler, J.D. et al. | 2003
- 1816
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DEVICES AND INTEGRATED CIRCUITS - Using Proton Irradiation to Probe the Origins of Low-Frequency Noise Variations in SiGe HBTsJin, Z. et al. | 2003
- 1821
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DEVICES AND INTEGRATED CIRCUITS - Impact of Proton Irradiation on the Static and Dynamic Characteristics of High-Voltage 4H-SiC JBS Switching DiodesLuo, Z. et al. | 2003
- 1821
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Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodesZhiyun Luo, / Tianbing Chen, / Cressler, J.D. et al. | 2003
- 1827
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Comparison of ionizing radiation effects in 0.18 and 0.25 /spl mu/m CMOS technologies for analog applicationsManghisoni, M. / Ratti, L. / Re, V. et al. | 2003
- 1827
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DEVICES AND INTEGRATED CIRCUITS - Comparison of Ionizing Radiation Effects in 0.18 and 0.25 mm CMOS Technologies for Analog ApplicationsManghisoni, M. et al. | 2003
- 1834
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DEVICES AND INTEGRATED CIRCUITS - Proton Tolerance of Multiple-Threshold Voltage and Multiple-Breakdown Voltage CMOS Device Design Points in a 0.18 mm System-on-a-Chip CMOS TechnologyLi, K. et al. | 2003
- 1834
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Proton tolerance of multiple-threshold voltage and multiple-breakdown voltage CMOS device design points in a 0.18 /spl mu/m system-on-a-chip CMOS technologyYing Li, / Cressler, J.D. / Yuan Lu, et al. | 2003
- 1839
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DEVICES AND INTEGRATED CIRCUITS - Bulk Damage Caused by Single Protons in SDRAMsShindou, H. et al. | 2003
- 1839
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Bulk damage caused by single protons in SDRAMsShindou, H. / Kuboyama, S. / Ikeda, N. et al. | 2003
- 1846
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DEVICES AND INTEGRATED CIRCUITS - Neutron, Proton, and Electron Irradiation Effects in InGaP-GaAs Single Heterojunction Bipolar TransistorsVuppala, S. et al. | 2003
- 1846
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Neutron, proton, and electron irradiation effects in InGaP/GaAs single heterojunction bipolar transistorsVuppala, S. / Li, C. / Zwicknagl, P. et al. | 2003
- 1852
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DEVICES AND INTEGRATED CIRCUITS - Response of Piezoresistive MEMS Accelerometers and Pressure Transducers to High Gamma DoseHolbert, K.E. et al. | 2003
- 1852
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Response of piezoresistive MEMS accelerometers and pressure transducers to high gamma doseHolbert, K.E. / Nessel, J.A. / McCready, S.S. et al. | 2003
- 1860
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DEVICES AND INTEGRATED CIRCUITS - Total Dose Degradation of MEMS Optical MirrorsMiyahira, T.F. et al. | 2003
- 1860
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Total dose degradation of MEMS optical mirrorsMiyahira, T.F. / Becker, H.N. / McClure, S.S. et al. | 2003
- 1867
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DEVICES AND INTEGRATED CIRCUITS - Total-Dose and Single-Event Effects in DC-DC Converter Control CircuitryAdell, P.C. et al. | 2003
- 1867
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Total-dose and single-event effects in DC/DC converter control circuitryAdell, P.C. / Schrimpf, R.D. / Holman, W.T. et al. | 2003
- 1873
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DEVICES AND INTEGRATED CIRCUITS - SPICE Modeling of Neutron Displacement Damage and Annealing Effects in Bipolar Junction TransistorsDeng, Y. et al. | 2003
- 1873
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SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistorsYanqing Deng, / Fjeldly, T.A. / Ytterdal, T. et al. | 2003
- 1878
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Chalcogenide memory arrays: characterization and radiation effectsMaimon, J.D. / Hunt, K.K. / Burcin, L. et al. | 2003
- 1878
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DEVICES AND INTEGRATED CIRCUITS - Chalcogenide Memory Arrays: Characterization and Radiation EffectsMaimon, J.D. et al. | 2003
- 1885
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BASIC MECHANISMS - Probing Proton Damage in SOI CMOS Technology by Using Lateral Bipolar ActionLi, Y. et al. | 2003
- 1885
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Probing proton damage in SOI CMOS technology by using lateral bipolar actionYing Li, / Guofu Niu, / Cressler, J.D. et al. | 2003
- 1891
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BASIC MECHANISMS - Charge Separation Techniques for Irradiated Pseudo-MOS SOI TransistorsJun, B. et al. | 2003
- 1891
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Charge separation techniques for irradiated pseudo-MOS SOI transistorsJun, B. / Fleetwood, D.M. / Schrimpf, R.D. et al. | 2003
- 1896
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Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devicesRashkeev, S.N. / Fleetwood, D.M. / Schrimpf, R.D. et al. | 2003
- 1896
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BASIC MECHANISMS - Statistical Modeling of Radiation-Induced Proton Transport in Silicon: Deactivation of Dopant Acceptors in Bipolar DevicesRashkeev, S.N. et al. | 2003
- 1901
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BASIC MECHANISMS - Mechanisms for Radiation Dose-Rate Sensitivity of Bipolar TransistorsHjalmarson, H.P. et al. | 2003
- 1901
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Mechanisms for radiation dose-rate sensitivity of bipolar transistorsHjalmarson, H.P. / Pease, R.L. / Witczak, S.C. et al. | 2003
- 1910
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Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacksFelix, J.A. / Shaneyfelt, M.R. / Fleetwood, D.M. et al. | 2003
- 1910
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BASIC MECHANISMS - Radiation-Induced Charge Trapping in Thin Al2O3-SiOxNy-Si(100) Gate Dielectric StacksFelix, J.A. et al. | 2003
- 1919
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BASIC MECHANISMS - NIEL for Heavy Ions: An Analytical ApproachMessenger, S.R. et al. | 2003
- 1919
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NIEL for heavy ions: an analytical approachMessenger, S.R. / Burke, E.A. / Xapsos, M.A. et al. | 2003
- 1924
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BASIC MECHANISMS - Proton Nonionizing Energy Loss (NIEL) for Device ApplicationsJun, I. et al. | 2003
- 1924
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Proton nonionizing energy loss (NIEL) for device applicationsInsoo Jun, / Xapsos, M.A. / Messenger, S.R. et al. | 2003
- 1929
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BASIC MECHANISMS - Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin OxidesPasternak, R. et al. | 2003
- 1929
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Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxidesPasternak, R. / Chatterjee, A. / Shirokaya, Y.V. et al. | 2003
- 1934
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BASIC MECHANISMS - Electrical, Spectral, and Chemical Properties of 1.8 MeV Proton Irradiated AlGaN-GaN HEMT Structures as a Function of Proton FluenceWhite, B.D. et al. | 2003
- 1934
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Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluenceWhite, B.D. / Bataiev, M. / Goss, S.H. et al. | 2003
- 1942
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BASIC MECHANISMS - Radiation Hardness of Czochralski Silicon Studied by 10-MeV and 20-MeV ProtonsTuominen, E. et al. | 2003
- 1942
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Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protonsTuominen, E. / Harkonen, J. / Tuovinen, E. et al. | 2003
- 1947
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BASIC MECHANISMS - The Role of Nanoclusters in Reducing Hole Trapping in Ion Implanted OxidesMrstik, B.J. et al. | 2003
- 1947
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The role of nanoclusters in reducing hole trapping in ion implanted oxidesMrstik, B.J. / Hughes, H.L. / Gouker, P. et al. | 2003
- 1954
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Proton-induced secondary particle environment for infrared sensor applicationsPickel, J.C. / Reed, R.A. / Marshall, P.W. et al. | 2003
- 1954
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Proton-Induced Secondary Particle Environment for Infrared Sensor ApplicationsPickel, J.C. et al. | 2003
- 1960
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Comparison of CCD damage due to 10- and 60-MeV protonsHopkinson, G.R. / Mohammadzadeh, A. et al. | 2003
- 1960
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Comparison of CCD Damage Due to 10- and 60-MeV ProtonsHopkinson, G.R. et al. | 2003
- 1968
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Proton-induced transients and charge collection measurements in a LWIR HgCdTe focal plane arrayMarshall, P.W. / Hubbs, J.E. / Arrington, D.C. et al. | 2003
- 1968
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Proton-Induced Transients and Charge Collection Measurements in a LWIR HgCdTe Focal Plane ArrayMarshall, P.W. et al. | 2003
- 1974
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - The Influence of Structural Characteristics on the Response of Silicon Avalanche Photodiodes to Proton IrradiationBecker, H.N. et al. | 2003
- 1974
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The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiationBecker, H.N. / Miyahira, T.F. / Johnston, A.H. et al. | 2003
- 1982
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Effects of 2 MeV proton irradiation on operating wavelength and leakage current of vertical cavity surface emitting lasersKalavagunta, A. / Bo Choi, / Neifeld, M.A. et al. | 2003
- 1982
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Effects of 2 MeV Proton Irradiation on Operating Wavelength and Leakage Current of Vertical Cavity Surface Emitting LasersKalavagunta, A. et al. | 2003
- 1991
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In-flight annealing of displacement damage in GaAs LEDs: a Galileo storySwift, G.M. / Levanas, G.C. / Ratliff, J.M. et al. | 2003
- 1991
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - In-Flight Annealing of Displacement Damage in GaAs LEDs: A Galileo StorySwift, G.M. et al. | 2003
- 1998
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Neutron irradiation effects in GaN-based blue LEDsLi, C. / Subramanian, S. et al. | 2003
- 1998
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Neutron Irradiation Effects in GaN-Based Blue LEDsLi, C. et al. | 2003
- 2003
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Irradiation induced degradation of high-speed response of Si p/sup +/-i-n/sup +/ photodiodes studied by pulsed laser measurementsLaird, J.S. / Hirao, T. / Onoda, S. et al. | 2003
- 2003
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Irradiation Induced Degradation of High-Speed Response of Si p+-i-n+ Photodiodes Studied by Pulsed Laser MeasurementsLaird, J.S. et al. | 2003
- 2011
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Single Particle Dark Current Spikes Induced in CCDs by High Energy NeutronsChugg, A.M. et al. | 2003
- 2011
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Single particle dark current spikes induced in CCDs by high energy neutronsChugg, A.M. / Jones, R. / Moutrie, M.J. et al. | 2003
- 2018
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Modeling of Proton-Induced CCD Degradation in the Chandra X-Ray ObservatoryLo, D.H. et al. | 2003
- 2018
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Modeling of proton-induced CCD degradation in the Chandra X-ray ObservatoryLo, D.H. / Srour, J.R. et al. | 2003
- 2024
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Dependence of the POR and NBOHC defects as function of the dose in hydrogen-treated and untreated KU1 glass fibersBrichard, B. / Fernandez, A.F. / Ooms, H. et al. | 2003
- 2024
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - Dependence of the POR and NBOHC Defects as Function of the Dose in Hydrogen-Treated and Untreated KU1 Glass FibersBrichard, B. et al. | 2003
- 2030
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PHOTONIC DEVICES AND INTEGRATED CIRCUITS - 14-MeV Neutron and Co60 Gamma Testing of a Power MOSFET OptocouplerMcMarr, P.J. et al. | 2003
- 2030
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14-MeV neutron and Co/sup 60/ gamma testing of a power MOSFET optocouplerMcMarr, P.J. / Nelson, M.E. / Hughes, H. et al. | 2003
- 2038
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ATMOSPHERIC AND TERRESTRIAL RADIATION EFFETCS - Solar Particle Enhancements of Single-Event Effect Rates at Aircraft AltitudesDyer, C.S. et al. | 2003
- 2038
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Solar particle enhancements of single-event effect rates at aircraft altitudesDyer, C.S. / Lei, F. / Clucas, S.N. et al. | 2003
- 2046
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ATMOSPHERIC AND TERRESTRIAL RADIATION EFFETCS - Comparisons of Soft Error Rate for SRAMs in Commercial SOI and Bulk Below the 130-nm Technology NodeRoche, P. et al. | 2003
- 2046
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Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology nodeRoche, P. / Gasiot, G. / Forbes, K. et al. | 2003
- 2055
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Contribution of SiO2 in neutron-induced SEU in SRAMsWrobel, F. / Palau, J.M. / Calvet, M.C. et al. | 2003
- 2055
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ATMOSPHERIC AND TERRESTRIAL RADIATION EFFETCS - Contribution Of SiO2 in Neutron-Induced SEU in SRAMsWrobel, F. et al. | 2003
- 2055
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Contribution of SiO/sub 2/ in neutron-induced SEU in SRAMsWrobel, F. / Palau, J.-M. / Calvet, M.-C. et al. | 2003
- 2060
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Terrestrial thermal neutronsDirk, J.D. / Nelson, M.E. / Ziegler, J.F. et al. | 2003
- 2060
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ATMOSPHERIC AND TERRESTRIAL RADIATION EFFETCS - Terrestrial Thermal NeutronsDirk, L.T.J.D. et al. | 2003
- 2065
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ATMOSPHERIC AND TERRESTRIAL RADIATION EFFETCS - Soft Error Rate Increase for New Generations of SRAMsGranlund, T. et al. | 2003
- 2065
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Soft error rate increase for new generations of SRAMsGranlund, T. / Granbom, B. / Olsson, N. et al. | 2003
- 2069
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Modeling Single-Event Effects in a Complex Digital DeviceClark, K.A. et al. | 2003
- 2069
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Modeling single-event effects in a complex digital deviceClark, K.A. / Ross, A.A. / Loomis, H.H. et al. | 2003
- 2081
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Investigation of single-event transients in voltage-controlled oscillatorsWenjian Chen, / Pouget, V. / Barnaby, H.J. et al. | 2003
- 2081
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Investigation of Single-Event Transients in Voltage-Controlled OscillatorsChen, W. et al. | 2003
- 2088
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Identification and Classification of Single-Event Upsets in the Configuration Memory of SRAM-Based FPGAsCeschia, M. et al. | 2003
- 2088
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Identification and classification of single-event upsets in the configuration memory of SRAM-based FPGAsCeschia, M. / Violante, M. / Reorda, M.S. et al. | 2003
- 2095
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Single event effects in PDSOI 4 M SRAM fabricated in UNIBONDLiu, S.T. / Heikkila, W.W. / Golke, K.W. et al. | 2003
- 2095
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Single Event Effects in PDSOI 4 M SRAM Fabricated in UNIBONDLiu, S.T. et al. | 2003
- 2101
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Impact of data cache memory on the single event upset-induced error rate of microprocessorsFaure, F. / Velazco, R. / Violante, M. et al. | 2003
- 2101
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Impact of Data Cache Memory on the Single Event Upset-Induced Error Rate of MicroprocessorsFaure, F. et al. | 2003
- 2107
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Single-event upset in evolving commercial silicon-on-insulator microprocessor technologiesIrom, F. / Farmanesh, F.H. / Swift, G.M. et al. | 2003
- 2107
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Single-Event Upset in Evolving Commercial Silicon-on-Insulator Microprocessor TechnologiesIrom, F. et al. | 2003
- 2113
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Accurate single-event-transient analysis via zero-delay logic simulationViolante, M. et al. | 2003
- 2113
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Accurate Single-Event-Transient Analysis via Zero-Delay Logic SimulationViolante, M. et al. | 2003
- 2119
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Applicability of circuit macromodeling to analog single-event transient analysisBoulghassoul, Y. / Rowe, J.D. / Massengill, L.W. et al. | 2003
- 2119
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Applicability of Circuit Macromodeling to Analog Single-Event Transient AnalysisBoulghassoul, Y. et al. | 2003
- 2126
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - An SEU Hardening Approach for High-Speed SiGe HBT Digital LogicKrithivasan, R. et al. | 2003
- 2126
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An SEU hardening approach for high-speed SiGe HBT digital logicKrithivasan, R. / Niu, G. / Cressler, J.D. et al. | 2003
- 2135
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Single-event effects in 0.18 /spl mu/m CMOS commercial processesMakihara, A. / Sakaide, Y. / Tsuchiya, Y. et al. | 2003
- 2135
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Single-Event Effects in 0.18 mm CMOS Commercial ProcessesMakihara, A. et al. | 2003
- 2139
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SEU mitigation for half-latches in Xilinx Virtex FPGAsGraham, P. / Caffrey, M. / Johnson, D.E. et al. | 2003
- 2139
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - SEU Mitigation for Half-Latches in Xilinx Virtex FPGAsGraham, P. et al. | 2003
- 2147
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Accelerator Validation of an FPGA SEU SimulatorJohnson, E. et al. | 2003
- 2147
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Accelerator validation of an FPGA SEU simulatorJohnson, E. / Caffrey, M. / Graham, P. et al. | 2003
- 2158
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SINGLE-EVENT EFFECTS. DEVICES AND INTEGRATED CIRCUITS - Single Event Upset and Hardening in 0.15 mm Antifuse-Based Field Programmable Gate ArrayWang, J.J. et al. | 2003
- 2158
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Single event upset and hardening in 0.15 /spl mu/m antifuse-based field programmable gate arrayWang, J.J. / Wong, W. / Wolday, S. et al. | 2003
- 2167
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Statistical model for radiation-induced wear-out of ultra-thin gate oxides after exposure to heavy ion irradiationCester, A. / Cimino, S. / Miranda, E. et al. | 2003
- 2167
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Statistical Model for Radiation-Induced Wear-Out of Ultra-Thin Gate Oxides After Exposure to Heavy Ion IrradiationCester, A. et al. | 2003
- 2176
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Data Retention After Heavy Ion Exposure of Floating Gate Memories: Analysis and SimulationLarcher, L. et al. | 2003
- 2176
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Data retention after heavy ion exposure of floating gate memories: analysis and simulationLarcher, L. / Cellere, G. / Paccagnella, A. et al. | 2003
- 2184
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Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuitsReed, R.A. / Marshall, P.W. / Pickel, J.C. et al. | 2003
- 2184
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-mm SiGe Heterojunction Bipolar Transistors and CircuitsReed, R.A. et al. | 2003
- 2191
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3-D simulation of heavy-ion induced charge collection in SiGe HBTsVaradharajaperumal, M. / Niu, G. / Krithivasan, R. et al. | 2003
- 2191
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - 3-D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTsVaradharajaperumal, M. et al. | 2003
- 2199
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Three-Dimensional Mapping of Single-Event Effects Using Two Photon AbsorptionMcMorrow, D. et al. | 2003
- 2199
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Three-dimensional mapping of single-event effects using two photon absorptionMcMorrow, D. / Lotshaw, W.T. / Melinger, J.S. et al. | 2003
- 2208
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Charge Collection by Capacitive Influence Through Isolation OxidesFerlet-Cavrois, V. et al. | 2003
- 2208
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Charge collection by capacitive influence through isolation oxidesFerlet-Cavrois, V. / Paillet, P. / Schwank, J.R. et al. | 2003
- 2219
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - A Single Event Latchup Suppression Technique for COTS CMOS ICsSpratt, J.P. et al. | 2003
- 2219
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A single event latchup suppression technique for COTS CMOS ICsSpratt, J.P. / Pickel, J.C. / Leadon, R.E. et al. | 2003
- 2225
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Heavy-Ion Induced Single-Event Transients in High-Speed InP-InGaAs Avalanche PhotodiodesLaird, J.S. et al. | 2003
- 2225
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Heavy-ion induced single-event transients in high-speed InP-InGaAs avalanche photodiodesLaird, J.S. / Hirao, T. / Onoda, S. et al. | 2003
- 2233
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Enhanced Avalanche Multiplication Factor and Single-Event BurnoutKuboyama, S. et al. | 2003
- 2233
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Enhanced avalanche multiplication factor and single-event burnoutKuboyama, S. / Ikeda, N. / Hirao, T. et al. | 2003
- 2239
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Comparison of NMOS and PMOS Transistor Sensitivity to SEU in SRAMs by Device SimulationCastellani-Coulié, K. et al. | 2003
- 2239
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Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulationCastellani-Coulie, K. / Sagnes, B. / Saigne, F. et al. | 2003
- 2245
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LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronicsHiemstra, D.M. / Blackmore, E.W. et al. | 2003
- 2245
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SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - LET Spectra of Proton Energy Levels From 50 to 500MeV and Their Effectiveness for Single Event Effects Characterization of MicroelectronicsHiemstra, D.M. et al. | 2003
- 2251
-
SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Neutron-Induced Pion Production in Silicon-Based CircuitsKinnison, J.D. et al. | 2003
- 2251
-
Neutron-induced pion production in silicon-based circuitsKinnison, J.D. / Maurer, R. / Roth, D.R. et al. | 2003
- 2256
-
SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Simulation Study of Single-Event Gate Rupture Using Radiation-Hardened Stripe Cell Power MOSFET StructuresTitus, J.L. et al. | 2003
- 2256
-
Simulation study of single-event gate rupture using radiation-hardened stripe cell power MOSFET structuresTitus, J.L. / Yen-Sheng Su, / Savage, M.W. et al. | 2003
- 2265
-
SINGLE-EVENT EFFECTS, MECHANISMS, AND MODELING - Evaluating Average and Atypical Response in Radiation Effects SimulationsWeller, R.A. et al. | 2003
- 2265
-
Evaluating average and atypical response in radiation effects simulationsWeller, R.A. / Sternberg, A.L. / Massengill, L.W. et al. | 2003
- 2272
-
SPACECRAFT ENVIRONMENTS AND EFFECTS - The ESA Standard Radiation Environment Monitor Program First Results From PROBA-I and INTEGRALMohammadzadeh, A. et al. | 2003
- 2272
-
The ESA Standard Radiation Environment Monitor program first results from PROBA-I and INTEGRALMohammadzadeh, A. / Evans, H. / Nieminen, P. et al. | 2003
- 2278
-
Model for the geostationary electron environment: POLEBoscher, D.M. / Bourdarie, S.A. / Friedel, R.H.W. et al. | 2003
- 2278
-
SPACECRAFT ENVIRONMENTS AND EFFECTS - Model for the Geostationary Electron Environment: POLEBoscher, D.M. et al. | 2003
- 2284
-
SPACECRAFT ENVIRONMENTS AND EFFECTS - Measurement of Conductivity and Charge Storage in Insulators Related to Spacecraft ChargingFrederickson, A.R. et al. | 2003
- 2284
-
Measurement of conductivity and charge storage in insulators related to spacecraft chargingFrederickson, A.R. / Dennison, J.R. et al. | 2003
- 2292
-
SPACECRAFT ENVIRONMENTS AND EFFECTS - Grazing Angle Proton Scattering: Effects on Chandra and XMM-Newton X-Ray TelescopesDichter, B.K. et al. | 2003
- 2292
-
Grazing angle proton scattering: effects on Chandra and XMM-Newton X-ray telescopesDichter, B.K. / Woolf, S. et al. | 2003
- 2296
-
Prediction of energetic solar particle event dose-time profiles using artificial neural networksHoff, J.L. / Townsend, L.W. / Hines, J.W. et al. | 2003
- 2296
-
SPACECRAFT ENVIRONMENTS AND EFFECTS - Prediction of Energetic Solar Particle Event Dose-Time Profiles Using Artificial Neural NetworksHoff, J.L. et al. | 2003
- 2301
-
SPACECRAFT ENVIRONMENTS AND EFFECTS - Total Dose Orbital Data by Dosimeter Onboard Tsubasa (MDS-1) SatelliteKimoto, Y. et al. | 2003
- 2301
-
Total dose orbital data by dosimeter onboard Tsubasa (MDS-1) satelliteKimoto, Y. / Koshiishi, H. / Matsumoto, H. et al. | 2003
- 2307
-
SPACECRAFT ENVIRONMENTS AND EFFECTS - Carrington Flare of 1859 as a Prototypical Worst-Case Solar Energetic Particle EventTownsend, L.W. et al. | 2003
- 2307
-
Carrington flare of 1859 as a prototypical worst-case solar energetic particle eventTownsend, L.W. / Zapp, E.N. / Stephens, D.L. et al. | 2003
- 2310
-
Total dose hardness assurance testing using laboratory radiation sourcesPaillet, P. / Schwank, J.R. / Shaneyfelt, M.R. et al. | 2003
- 2310
-
HARDNESS ASSURANCE - Total Dose Hardness Assurance Testing Using Laboratory Radiation SourcesPaillet, P. et al. | 2003
- 2316
-
HARDNESS ASSURANCE - Bias Dependence of FD Transistor Response to Total Dose IrradiationFlament, O. et al. | 2003
- 2316
-
Bias dependence of FD transistor response to total dose irradiationFlament, O. / Torres, A. / Ferlet-Cavrois, V. et al. | 2003
- 2322
-
HARDNESS ASSURANCE - Heavy-Ion Single-Event Effects Testing of Lead-On-Chip Assembled High-Density MemoriesHarboe-Sørensen, R. et al. | 2003
- 2322
-
Heavy-ion single-event effects testing of lead-on-chip assembled high-density memoriesHarboe-Sorensen, R. / Guerre, F.-X. / Loquet, J.-G. et al. | 2003
- 2328
-
HARDNESS ASSURANCE - ELDRS in Space: An Updated and Expanded Analysis of the Bipolar ELDRS Experiment on MPTBTurflinger, T.L. et al. | 2003
- 2328
-
ELDRS in space: an updated and expanded analysis of the bipolar ELDRS experiment on MPTBTurflinger, T.L. / Campbell, A.B. / Schmeichel, W.M. et al. | 2003
- 2335
-
Impact of mechanical stress on total-dose effects in bipolar ICsBoch, J. / Fleetwood, D.M. / Schrimpf, R.D. et al. | 2003
- 2335
-
HARDNESS ASSURANCE - Impact of Mechanical Stress on Total-Dose Effects in Bipolar ICsBoch, J. et al. | 2003
- 2341
-
HARDNESS ASSURANCE - SEE Characterization of Vertical DMOSFETs: An Updated Test ProtocolTitus, J.L. et al. | 2003
- 2341
-
SEE characterization of vertical DMOSFETs: an updated test protocolTitus, J.L. / Wheatley, C.F. et al. | 2003
- 2352
-
Using a system-level bit-error-rate model to predict on-orbit performanceCosgrove, M.A. et al. | 2003
- 2352
-
HARDNESS ASSURANCE - Using a System-Level Bit-Error-Rate Model to Predict On-Orbit PerformanceCosgrove, M.A. et al. | 2003
- 2358
-
Hardening of a radiation sensor based on optically stimulated luminescenceVaille, J.-R. / Ducret, S. / Idri, K. et al. | 2003
- 2358
-
DOSIMETRY AND FACILITIES - Hardening of a Radiation Sensor Based on Optically Stimulated LuminescenceVaillé, J.-R. et al. | 2003
- 2363
-
Correlation of neutron dosimetry using a silicon equivalent proportional counter microdosimeter and SRAM SEU cross sections for eight neutron energy spectraGersey, B. / Wilkins, R. / Huff, H. et al. | 2003
- 2363
-
DOSIMETRY AND FACILITIES - Correlation of Neutron Dosimetry Using a Silicon Equivalent Proportional Counter Microdosimeter and SRAM SEU Cross Sections for Eight Neutron Energy SpectraGersey, B. et al. | 2003
- 2367
-
Neutron dosimetry with planar silicon p-i-n diodesRosenfeld, A.B. / Yudelev, M. / Lerch, M.L.F. et al. | 2003
- 2367
-
DOSIMETRY AND FACILITIES - Neutron Dosimetry With Planar Silicon p-i-n DiodesRosenfeld, A.B. et al. | 2003
- 2373
-
LET dependence of the charge collection efficiency of silicon microdosimetersCornelius, I.M. / Rosenfeld, A.B. / Siegele, R. et al. | 2003
- 2373
-
DOSIMETRY AND FACILITIES - LET Dependence of the Charge Collection Efficiency of Silicon MicrodosimetersCornelius, I.M. et al. | 2003
- 2380
-
A compact portable setup for in situ solar cells degradationFilevich, A. / Bruno, C.J. / Vazquez, J.F. et al. | 2003
- 2380
-
DOSIMETRY AND FACILITIES - A Compact Portable Setup for In Situ Solar Cells DegradationFilevich, A. et al. | 2003
- 2385
-
Criteria for the selection of dosimetry cross sectionsGriffin, P.J. et al. | 2003
- 2385
-
DOSIMETRY AND FACILITIES - Criteria for the Selection of Dosimetry Cross SectionsGriffin, P.J. et al. | 2003
- 2393
-
DOSIMETRY AND FACILITIES - Neutron Contribution to CaF2:Mn Thermoluminescent Dosimeter Response in Mixed (n-g) Field EnvironmentsDePriest, K.R. et al. | 2003
- 2393
-
Neutron contribution to CaF/sub 2/:Mn thermoluminescent dosimeter response in mixed (n//spl gamma/) field environmentsDePriest, K.R. / Griffin, P.J. et al. | 2003
- 2399
-
Microdose analysis of ion strikes on SRAM cellsScheick, L. et al. | 2003
- 2399
-
DOSIMETRY AND FACILITIES - Microdose Analysis of Ion Strikes on SRAM CellsScheick, L. et al. | 2003
- 2410
-
NUCLEAR SCIENCE SYMPOSIUM (NSS) - LaBr3:Ce Scintillators for Gamma-Ray SpectroscopyShah, K.S. et al. | 2003
- 2410
-
LaBr/sub 3/:Ce scintillators for gamma-ray spectroscopyShah, K.S. / Glodo, J. / Klugerman, M. et al. | 2003
- 2414
-
NUCLEAR SCIENCE SYMPOSIUM (NSS) - Development of X-Ray Scanner Using 450-kVp X-RayKwak, S.-W. et al. | 2003
- 2414
-
Development of X-ray scanner using 450-kVp X-raySung-Woo Kwak, / Kwang Hyun Kim, / Insu Kim, et al. | 2003
- 2420
-
NUCLEAR SCIENCE SYMPOSIUM (NSS) - Extensive Performance Studies for the ATLAS BIS-MDT Precision Muon Chambers With Cosmic RaysAlexopoulos, T. et al. | 2003
- 2420
-
Extensive performance studies for the ATLAS BIS-MDT precision muon chambers with cosmic raysAlexopoulos, T. / Avramidou, R. / Bratzler, U. et al. | 2003
- 2426
-
Short-Channel Radiation Effect in 60 MeV Proton Irradiated 0. 13 mm CMOS TransistorsSimoen, E. et al. | 2003
- 2426
-
Short-channel radiation effect in 60 MeV proton irradiated 0.13 /spl mu/m CMOS transistorsSimoen, E. / Mercha, A. / Morata, A. et al. | 2003
- 2433
-
Degradation of instrumentation amplifiers due to the nonionizing energy loss damageFranco, F.J. / Lozano, J. / Santos, J.P. et al. | 2003
- 2441
-
Modular disk recorder for physics experimentsChanglong Jiang, / Cheng Ma, / Xugang Zhang, et al. | 2003
- 2445
-
A new wide-range reactor power-measuring channelKhaleeq, M.T. / Zaka, I. / Qaiser, H. et al. | 2003
- 2452
-
Simultaneous measurements of absolute numbers of electrons and scintillation photons produced by 5.49 MeV alpha particles in rare gasesSaito, K. / Sasaki, S. / Tawara, H. et al. | 2003
- 2460
-
The ALTRO chip: a 16-channel A/D converter and digital processor for gas detectorsBosch, R.E. / de Parga, A.J. / Mota, B. et al. | 2003
- 2470
-
High Throughput High Resolution VortexTM Detector for X-Ray DiffractionIwanczyk, J.S. et al. | 2003
- 2470
-
High throughput high resolution Vortex/spl trade/ detector for X-ray diffractionIwanczyk, J.S. / Patt, B.E. / Barkan, S. et al. | 2003
- 2474
-
Effects of gamma -rays on JFET devices and circuits fabricated in a detector-compatible ProcessBetta, G.F.D. / Manghisoni, M. / Ratti, L. et al. | 2003
- 2474
-
Effects of /spl gamma/-rays on JFET devices and circuits fabricated in a detector-compatible ProcessBetta, G.F.D. / Manghisoni, M. / Ratti, L. et al. | 2003
- 2474
-
Effects of g-Rays on JFET Devices and Circuits Fabricated in a Detector-Compatible ProcessDalla Betta, G.F. et al. | 2003
- 2481
-
Model for the radiation degradation of polycrystalline silicon filmsNakabayashi, M. / Ohyama, H. / Takakura, K. et al. | 2003
- 2486
-
Front-end electronics for the CDF-II time-of-flight systemChen, C. / Jones, M. / Kononenko, W. et al. | 2003
- 2491
-
CORRESPONDENCE - First Results From Cryogenic Avalanche Detectors Based on Gas Electron MultipliersBuzulutskov, A. et al. | 2003
- 2491
-
First results from cryogenic avalanche detectors based on gas electron multipliersBuzulutskov, A. / Bondar, A. / Shekhtman, L. et al. | 2003
- 2494
-
ERRATA - Errata to "Nonionizing Energy Loss (NIEL) for Heavy Ions"Messenger, S.R. et al. | 2003
- 2494
-
Discussion on "A Reduction Technique for Obtaining Simplified Reliability Expression"Messenger, S.R. / Burke, E.A. / Summers, G.P. et al. | 2003
- 2495
-
ERRATA - Errata to "X-Ray Stereotactic Lesion Localization in Conjunction With Dedicated Scintimammography"Moré, M.J. et al. | 2003
- 2495
-
Discussion on "OBDD-Based Sectionalizing Strategies for Parallel Power System Restoration"More, M.J. / Narayanan, D. / Goodale, P.J. et al. | 2003
- 2496
-
2003 INDEX| 2003
- 2496
-
Author Index| 2003
- 2516
-
Subject index| 2003
- c1
-
[Front Cover]| 2003
- c2
-
IEEE Transactions on Nuclear Science publication information| 2003
- c3
-
Information for Authors| 2003
- c4
-
Affiliate plan of the IEEE Nuclear and Plasma Sciences Society| 2003
- i
-
Table of Contents| 2003
-
SELECTED PAPERS FROM THE 2003 IEEE NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE (NSREC '03)| 2003