IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 396
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Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETsJeong, Jinsu / Yoon, Jun-Sik / Lee, Sanguk et al. | 2023
- 402
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Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN BufferWu, Hao / Kang, Xuanwu / Zheng, Yingkui et al. | 2023
- 409
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Bias Dependence of Non-Fourier Heat Spreading in GaN HEMTsShen, Yang / Chen, Xue-Song / Hua, Yu-Chao et al. | 2023
- 418
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Analytical Electro-Thermal Model for Multianode Schottky Diodes With Improved Temperature-Dependent Parameters Extraction MethodTian, Yaoling / He, Yue / Huang, Kun et al. | 2023
- 424
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Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 VWu, Yinhe / Liu, Shuang / Zhang, Jincheng et al. | 2023
- 429
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Simulation of AlGaN/GaN MISFET With 3.6-GW/cm2 High FOM by SIPOS Field Plates Electric Field ModulationDuan, Baoxing / Ma, Junchao / Yang, Luoyun et al. | 2023
- 435
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Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics TransportMiller, Nicholas C. / Grupen, Matt / Islam, Ahmad E. et al. | 2023
- 443
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Radio Frequency Characteristics of InGaAs FE-FETs With Scaled Channel LengthHuang, P. / Chen, M. Y. / Luc, Q. H. et al. | 2023
- 449
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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTsTang, Shun-Wei / Bakeroot, Benoit / Huang, Zhen-Hong et al. | 2023
- 454
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Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and InvestigationMeshram, Ashvinee Deo / Sengupta, Anumita / Bhattacharyya, Tarun K. et al. | 2023
- 461
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A Novel Array Programming Scheme for Large Matrix Processing in Flash-Based Computing-in-Memory (CIM) With Ultrahigh Bit DensityFeng, Yang / Zhang, Dong / Zhao, Guoqing et al. | 2023
- 468
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Multilevel Non-Volatile Memristive Response in e-TextileKhanna, Suraj P. / Singh, Satish / Suman, C. K. et al. | 2023
- 473
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Y2O3-Based Crossbar Array for Analog and Neuromorphic ComputationKumar, Sanjay / Kumbhar, Dhananjay D. / Park, Jun H. et al. | 2023
- 478
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Low-Energy Shared-Current Write Schemes for Voltage-Controlled Spin-Orbit-Torque MemoryLee, Albert / Alam, Irina / Yang, Jiyue et al. | 2023
- 485
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3-D Heterogeneous Integration of RRAM-Based Compute-In-Memory: Impact of Integration Parameters on Inference AccuracyKaul, Ankit / Luo, Yandong / Peng, Xiaochen et al. | 2023
- 493
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Nonideality Suppression and 16-State Multilevel Cell Storage Optimization in Phase Change Memory With Linear-Like CircuitChen, Cheng / Xie, Chenchen / Chen, Houpeng et al. | 2023
- 499
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Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming CapabilityLi, Xueqi / Pan, Liyang / Wang, Junyi et al. | 2023
- 506
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Design of a Compact Spin-Orbit-Torque-Based Ternary Content Addressable MemoryNarla, Siri / Kumar, Piyush / Laguna, Ann Franchesca et al. | 2023
- 514
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Read Disturbances in Cross-Point Phase-Change Memory Arrays—Part I: Physical Modeling With Phase-Change DynamicsKim, Donguk / Jang, Jun Tae / Kim, Changwook et al. | 2023
- 521
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Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External CurrentsKim, Donguk / Jang, Jun Tae / Kim, Changwook et al. | 2023
- 527
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Electrical Reliability of Flexible Low-Temperature Polycrystalline Oxide Thin-Film Transistors Under Mechanical StressHan, Chanhee / Kim, Hyojung / Kim, Dongbhin et al. | 2023
- 532
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Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation FrequencyCharnas, Adam / Anderson, Jackson / Zhang, Jie et al. | 2023
- 537
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High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized AlxOyLin, Xiaoyu / Xin, Qian / Kim, Jaekyun et al. | 2023
- 544
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Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film TransistorsXie, Na / Zhu, Hui / Zhang, Yiqun et al. | 2023
- 550
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Optimizing Photonic Annealing Technique for High-k Dielectric of Full-Solution-Processed Oxide Thin Film TransistorXu, Meng / Hu, Sunjie / Peng, Cong et al. | 2023
- 556
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Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors With SiAlOX DielectricZhao, Wanpeng / Zhang, Ning / Yao, Chong et al. | 2023
- 563
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Design and Simulation of a Highly Sensitive Charge Detector With Nondestructive Readout Mode for Fully Depleted Thick CCDsSofo-Haro, Miguel / Donlon, Kevan / Burke, Barry et al. | 2023
- 570
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Trap Behavior of the Optical Power Fluctuation in AlGaN-Based UV-C LEDs DegradationSu, Mengwei / Liu, Hongxia / Cai, Ming et al. | 2023
- 576
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High-Performance Carbon Nanodots/Graphene Heterojunction Solar-Blind Ultraviolet Photodetector via Vertical StructureChen, Taihao / Lin, Shipeng / Fang, Yong et al. | 2023
- 582
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Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection EfficiencyWu, Jau Yang / Liu, Chun-Hsien et al. | 2023
- 588
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Embedded Electrode Micro-LEDs With High Modulation Bandwidth for Visible Light CommunicationZhu, Zihe / Lei, Lei / Lin, Tingjun et al. | 2023
- 594
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FD-SOI-Based Pixel With Real-Time Frame Difference for Motion Extraction and Image PreprocessingLiu, Liqiao / Ren, Xu / Zhao, Kai et al. | 2023
- 600
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Effect of Different Ligands Coating on the Photovoltaic Performance of CdSe Quantum Dot-Sensitized Solar CellsChen, Yexin / Zou, Shibing / Zou, Wenhua et al. | 2023
- 605
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Boosted Ambient Contrast Ratio of Light-Emitting Diode Display Devices With High Light Output Using a Laminated Interlaced Microgroove Janus StructureLi, Zongtao / Zhang, Yunlong / Liang, Guanwei et al. | 2023
- 612
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Photoresponse Enhancement in Ge MSM Photodetector With Ge Micropillar ArrayZhang, Ningning / Shao, Jifang / Hao, Yuekai et al. | 2023
- 619
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Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer StructureLi, Yanjun / Yang, Shu / Liu, Kai et al. | 2023
- 627
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Performance of a Novel Rear-Triggered 4H-SiC Photoconductive Semiconductor SwitchFeng, Zhuoyun / Luan, Chongbiao / Xiao, Longfei et al. | 2023
- 633
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Chip Size Minimization for Wide and Ultrawide Bandgap Power DevicesWang, Boyan / Xiao, Ming / Zhang, Zichen et al. | 2023
- 640
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Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt ConditionLiu, Chao / Xing, Pengcheng / Zhang, Shuyi et al. | 2023
- 647
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Low On-State Voltage and EMI Noise 4H-SiC IGBT With Self-Biased Split-Gate pMOSWu, Lijuan / Liu, Mengjiao / Zhang, Mengyuan et al. | 2023
- 653
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A 3-D Thermal Network Model for Monitoring of IGBT ModulesHeng, Ke / Yang, Xin / Wu, Xinlong et al. | 2023
- 662
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Fast-Switching and Low-Loss SOI LIGBT With Recombination Electrode and Double U-Shaped P-RegionsWei, Jie / Dai, Kaiwei / Yang, Kemeng et al. | 2023
- 667
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High-Current and Short-Circuit Capability SOI-LIGBT With Double-Integrated Self-Adapted MOS-ResistorsYang, Kemeng / Su, Wei / Wang, Junnan et al. | 2023
- 675
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On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETsHuang, Linhua / Liu, Yong / Peng, Xin et al. | 2023
- 683
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Transient-Liquid-Phase Bonding of Granulated Cu–Sn Bumps With a 4-μm Fine PitchShi, Yunfan / Wang, Zilin / Zhang, Huawei et al. | 2023
- 689
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Multiscale Simulations of 2-D Material Ink-Based Printed Network DevicesDubey, Prabhat Kumar / Marian, Damiano / Fiori, Gianluca et al. | 2023
- 695
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Modeling and Characterization of Annealing-Induced Cu Protrusion of TSVs With Polyimide Liner Considering Diffusion Creep BehaviorYang, Baoyan / Ding, Yingtao / Cheng, Zhiqiang et al. | 2023
- 702
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Porosity Dependence of Thermal and Electrical Properties in Nano-Silver PasteLv, Weishan / Liu, Jiaxin / Lei, Xin et al. | 2023
- 708
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Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide Bandgap, and High-Voltage ApplicationsStanojevic, Zlatan / Gonzalez-Medina, Jose Maria / Schanovsky, Franz et al. | 2023
- 714
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Coexistence of Space Charge Limited and Variable Range Hopping Conduction Mechanism in Sputter-Deposited Au/SiC Metal–Semiconductor–Metal DeviceArora, Alisha / Mourya, Satyendra / Singh, Neetika et al. | 2023
- 720
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Thermal Sensing Characteristics of Low-Voltage n-Channel Organic Field-Effect Transistors With Triple Layers of Naphthalenediimide-Containing Conjugated Polymer and Gate-Insulating PolymersLee, Chulyeon / Lee, Woongki / Song, Myeonghun et al. | 2023
- 726
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Random Number Generation With a Hybrid Conjugated Polymer MemristorFoulger, Stephen H. / Bandera, Yuriy / Grant, Benjamin et al. | 2023
- 732
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Self-Powered Paper-Based Pressure Sensor Driven by Triboelectric Nanogenerator for Detecting Dynamic and Static ForcesXia, Sheng-Yuan / Guo, Liang-Yan / Tao, Lu-Qi et al. | 2023
- 739
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A Washable, Permeable, and Ultrasensitive Sn-Based Textile Pressure Sensor for Health MonitoringLi, Meiying / Wang, Yuting / Wen, Xiaolong et al. | 2023
- 746
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Identification of the Current Transport Mechanism in a Vertical Zr/LaB6/p-Diamond Schottky Barrier Diode for Low-Power Highly Sensitive Temperature SensorShao, Guoqing / Wang, Juan / Wang, Yanfeng et al. | 2023
- 752
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Demonstration of an Ultracompact, High-Isolation Power Coupler for W-Band Sheet Beam Traveling Wave TubesWan, Yixin / Wang, Jianxun / Li, Xinjie et al. | 2023
- 759
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Efficiency Enhancement of a Dual-Band Magnetically Insulated Line Oscillator Using a Modulation CavitySingh, Mohit Kumar / Mahto, Manpuran / Jain, Pradip Kumar et al. | 2023
- 765
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Study on Pseudospark Switch Triggered by 532-nm Focused LaserSun, Guoxiang / Wang, Xia / Ding, Weidong et al. | 2023
- 771
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Electrical Characterization of Plasma-Assisted Electron Beam Source With Sub-mm Sheet ApertureAbhishek, Anand / Kumar, Niraj / Vishant et al. | 2023
- 776
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Ion Intercalation Enabled Tunable Frequency Response in Lithium Niobite MemristorsGhosh, Aheli / Weidenbach, Alex S. / Zivasatienraj, Bill et al. | 2023
- 782
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Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3Xia, Yuqin / Liu, Lu / Tao, Xinge et al. | 2023
- 789
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A Drift-Diffusion Based Modeling and Optimization Framework for Nanoscale Spin-Orbit Torque DevicesKumar, Piyush / Liao, Yu-Ching / Ralph, Daniel C. et al. | 2023
- 796
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Improved Subthreshold Swing of MoS₂ Negative-Capacitance Transistor by Using HfZrAlO as Ferroelectric Layer of Gate-StackTao, Xinge / Liu, Lu / Xu, Jingping et al. | 2023
- 801
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Design Insights Into Switching Performance of Germanium Source L-Shaped Gate Dopingless TFET Based on Cladding Layer ConceptCherik, Iman Chahardah / Mohammadi, Saeed et al. | 2023
- 806
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Physical Insights Into the Performances of Negative Capacitance Field Effect Transistors Using Single-Domain Versus Multidomain ModelsLi, Ming-Hao / He, Guan-You / Li, Qiang et al. | 2023
- 812
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New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) SelectorsHu, Zeyu / Zhang, Weidong / Degraeve, Robin et al. | 2023
- 819
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Low-Power Dynamic Circuit Design With Steep-Switching Hybrid Phase Transition FETs (Hyper-FETs)Islam, Md Mazharul / Hernandez Rivero, Maria / Rose, Garrett et al. | 2023
- 826
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Novel High Power Pulsed Mode Operation of Commercial Continuous-Wave MagnetronChernousov, Yuri et al. | 2023
- 830
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Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWTTian, Yanyan / Shu, Guoxiang / Gong, Yubin et al. | 2023
- 835
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Corrections to “Experimental Study of Adversarial Magnetic Field Exposure Attacks on Toggle MRAM Chips”Chakraborty, Supriya / Suri, Manan et al. | 2023
- 836
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Semiconductor Device Modeling for Circuit and System Design| 2023
- 838
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Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications| 2023
- 840
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TechRxiv: Share Your Preprint Research with the World!| 2023
- C1
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Table of Contents| 2023
- C2
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IEEE ELECTRON DEVICES SOCIETY| 2023
- C3
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IEEE Transactions on Electron Devices information for authors| 2023