Microelectronic engineering : an international journal of semiconductor manufacturing technology
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
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Committees| 2001
- 3
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Acknowledgements| 2001
- 5
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Prefacede Santi, Giorgi et al. | 2001
- 7
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IntroductionPaletto, Ing Raimondo et al. | 2001
- 11
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Design solutions for the interconnection parasitic effects in deep sub-micron technologiesBaldi, L. et al. | 2001
- 19
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Buffer design and insertion for global interconnections in 0.1 (micro)m technologyPersson, S. et al. | 2001
- 19
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Buffer design and insertion for global interconnections in 0.1 mm technologyPersson, S. / Zhou, D. / Zhang, S. L. et al. | 2001
- 29
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Simulations and measurements of capacitance in dielectric stacks and consequences for integrationDe Roest, D. et al. | 2001
- 37
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Fast and accurate analysis of the multiconductor interconnectsYmeri, H. et al. | 2001
- 45
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Influence of barrier and cap layer deposition on the properties of capped and non-capped porous silicon oxideSchulz, S.E. et al. | 2001
- 53
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Simulation of the dielectric constant of aerogels and estimation of their water contentXiao, X. et al. | 2001
- 59
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Electronic recombinations and ionic transport in BPSG layersVedda, A. et al. | 2001
- 65
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EPR and UV-Raman study of BPSG thin films: structure and defectsFanciulli, M. et al. | 2001
- 73
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Properties of posttreated low k flowfill films and their stability after etch, resist and polymer strip processesBeekmann, K. / Wilby, A. / Giles, K. et al. | 2001
- 73
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Properties of posttreated low k flowfill???trade films and their stability after etch, resist and polymer strip processesBeekmann, K. et al. | 2001
- 83
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Silicon diffusion in competitive TiSi2 phases by molecular dynamics simulationsMiglio, Leo et al. | 2001
- 93
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AFM measurement of the grain size in polycrystalline titanium silicidesCazzaniga, F. et al. | 2001
- 101
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Ti-silicide formation during isochronal annealing followed by in situ ellipsometryStark, T. et al. | 2001
- 109
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Kinetics of the C49-C54 transformation by micro-Raman imagingPrivitera, S. et al. | 2001
- 115
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Structural investigations of the C49-C54 transformation in TiSi2 thin filmsChenevier, B. et al. | 2001
- 123
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Effect of a thin Ta layer on the C49-C54 transitionLa Via, F. et al. | 2001
- 129
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Brillouin scattering of TiSi2: elastic constants and related thermodynamic parametersPastorelli, R. et al. | 2001
- 137
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Advanced salicided 4 Mbit flash memory array with borderless contactsPeschiaroli, D. et al. | 2001
- 145
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Orientation-dependent stress build-up during the formation of epitaxial CoSi2Steegen, An et al. | 2001
- 151
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The effect of the reaction temperature on the thermal stability of polycrystalline CoSi2 layers on Si(001)Alberti, A. et al. | 2001
- 157
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Optimized thermal processing for Ti-capped CoSi2 for 0.13 mm technologyLindsay, R. / Lauwers, A. / de Potter, M. et al. | 2001
- 157
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Optimized thermal processing for Ti-capped CoSi2 for 0.13 (micro)m technologyLindsay, R. et al. | 2001
- 163
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Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate and their thermal stabilityAlberti, A. et al. | 2001
- 171
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Epitaxial CoSi2 by solid phase reaction of Co-Ti and Co-Hf bilayers on Si(001)Falke, M. et al. | 2001
- 177
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Nanometer patterning of thin CoSi2-films by application of local stressKluth, P. et al. | 2001
- 183
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Thermal stability of amorphous Ti3Si1O8 thin filmsGiauque, P.H. et al. | 2001
- 189
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Growth and properties of LPCVD W-Si-N barrier layersBystrova, S. et al. | 2001
- 197
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Interface characteristics between tungsten silicide electrodes and thin dielectricsSell, B. et al. | 2001
- 205
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Impact of plasma treatment time on MOCVD-TiN properties and on the electrical performance of deep contactsSabbadini, A. et al. | 2001
- 213
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Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusionRiedel, S. et al. | 2001
- 219
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Modification of b-FeSi2 precipitate layers in silicon by hydrogen implantationSchuller, B. et al. | 2001
- 227
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Preparation and properties of MnSi1.7 on Si(001)Teichert, S. et al. | 2001
- 233
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Structural and optical properties of Fe1-xMxSi2 thin films (M=Co, Mn; 0<=x<=0.20)Fanciulli, M. et al. | 2001
- 245
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Key reliability issues for copper integration in damascene architectureGonella, R. et al. | 2001
- 257
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Comparison of copper damascene and aluminum RIE metallization in BICMOS technologyHelneder, H. et al. | 2001
- 269
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CVD and PVD copper integration for dual damascene metallization in a 0.18 mm processProust, M. / Judong, F. / Gilet, J. M. et al. | 2001
- 269
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CVD and PVD copper integration for dual damascene metallization in a 0.18 (micro)m processProust, M. et al. | 2001
- 277
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Integration of Cu and low-k dielectrics: effect of hard mask and dry etch on electrical performance of damascene structuresDonaton, R.A. et al. | 2001
- 285
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Fabrication of fine copper lines by selective chemical vapor deposition on silicon substratesVidal, S. et al. | 2001
- 291
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Damascene test structures for the evaluation of barrier layer performance against copper diffusionMotte, P. et al. | 2001
- 297
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Evaluation of electroless deposited Co(W,P) thin films as diffusion barriers for copper metallizationKohn, A. et al. | 2001
- 305
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Copper chemical mechanical polishing using a slurry-free techniqueNguyen, V.H. et al. | 2001
- 313
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The electrical and material properties of MOS capacitors with electrolessly deposited integrated copper gateShacham-Diamand, Yosi et al. | 2001
- 323
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Copper passivation of boron in Si1-xGex alloys and boron reactivation kineticsBarthula, M. et al. | 2001
- 329
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A comparative study of copper drift diffusion in plasma deposited a-SiC:H and silicon nitrideLanckmans, F. et al. | 2001
- 337
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An additional effect of texture on the electromigration behavior of aluminumDorgelo, A.M. et al. | 2001
- 341
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Comparative study of Cu and CuAl0.3 wt.% filmsSchwalbe, G. et al. | 2001
- 349
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A percolative simulation of electromigration phenomenaPennetta, C. et al. | 2001
- 357
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Highly metastable amorphous or near-amorphous ternary films (mictamict alloys)Nicolet, M.-A. et al. | 2001
- 369
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Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiCDefives, D. et al. | 2001
- 375
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Structural characterisation of titanium silicon carbide reactionMakhtari, A. et al. | 2001
- 383
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Advanced silver-based metallization patterning for ULSI applicationsAlford, T.L. et al. | 2001
- 389
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Self-encapsulation effects on the electromigration resistance of silver linesAlford, T.L. et al. | 2001
- 397
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Advanced long throw PVD for contact to silicon and via applicationsUrbansky, N. et al. | 2001
- 403
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Stability of conducting amorphous Ru-Si-O thin films under oxygen annealingCherry, H.B. et al. | 2001
- 409
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Author Index| 2001