Superlattices and microstructures : a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 329
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Editorial: Special issue on silicon nanoelectronicsFerry, David K. et al. | 2000
- 331
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A monolithically integrated Si interband tunneling diode (IBTD)-MOSFET memory for ultra low voltage operation below 0.5 VSorada, H. et al. | 2000
- 331
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A monolitically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 VSorada, H. / Morita, K. / Morimoto, K. et al. | 2000
- 339
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Investigation of charging-discharging phenomena in nano-crystal memoriesDe Salvo, B. et al. | 2000
- 345
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Single-electron transistor analyticI-Vmodel for SPICE simulationsWang, Xiaohui et al. | 2000
- 351
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MOSFET scaling into the 10 nm regimeChang, Leland et al. | 2000
- 357
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Threshold voltage fluctuations induced by statistical 'position' and 'number' impurity fluctuations in bulk MOSFETsYasuda, Yuri et al. | 2000
- 363
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Material requirements and design considerations for Si-SiGe heterojunction CMOSBadcock, S. et al. | 2000
- 369
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Quantum wires in strained silicon quantum wells on tilted substratesRack, M.J. et al. | 2000
- 377
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Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinementKirk, Wiley P. et al. | 2000
- 377
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Development of epitaxial silicon-matched insulators: silicon heterostructures for quantum confinementKirk, W.P. / Clark, K. / Maldonado, E. et al. | 2000
- 387
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Dynamics of tunneling into charge-tunable Si quantum dotsShi, Y. et al. | 2000
- 393
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Process and device characteristics of self-assembled metal nano-crystal EEPROMLiu, Zengtao et al. | 2000
- 401
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A direct tunneling memory using ultra-thin oxide and deca-nano floating gate structureUsuki, Tatsuya et al. | 2000
- 407
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Influence of off-set energy on the electrical characteristics of Si resonant tunneling MOST (STRMOST)Matsuo, N. / Kitagawa, Y. / Takami, Y. et al. | 2000
- 407
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Influence of off-set energy on the electrical characteristics of Si resonant tunneling MOST (SRTMOST)Matsuo, Naoto et al. | 2000
- 413
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Formation of unintentional dots in small Si nanostructuresRokhinson, L.P. et al. | 2000
- 419
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Effective potentials and the onset of quantization in ultrasmall MOSFETsFerry, David K. et al. | 2000
- 425
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Semi-empirical and practical model for low-electric field direct tunneling current estimation in nanometer-thick SiO2filmsNakatsuji, Hiroshi et al. | 2000
- 429
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Towards quantum cellular automata operation in silicon: transport properties of silicon multiple dot structuresSingle, C. et al. | 2000
- 435
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Ultimate sub-25 nm gate length NMOSFETs transport at 293 and 77 KBertrand, G. et al. | 2000
- 445
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A 20 nm gate-length ultra-thin body p-MOSFET with silicide source-drainKedzierski, Jakub et al. | 2000
- 453
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Properties of Si nanowire devices fabricated by using an inorganic EB resist processTsutsumi, Toshiyuki et al. | 2000
- 461
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3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effectsMilicic, S.N. et al. | 2000
- 469
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Nanolithography by electron beam resist-trimming techniqueMaeda, Tatsuro et al. | 2000
- 477
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Metal-oxide-semiconductor field effect transistor using 'oxidized my-c-Si/ultrathin oxide' gate structureBaik, S.J. / Choi, J.H. / Lee, J.Y. et al. | 2000
- 477
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Metal-oxide-semiconductor field effect transistor using 'oxidized(micro)c-Si-ultrathin oxide' gate structureJae Baik, Seung et al. | 2000
- 485
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Analysis of the design space available for high-kgate dielectrics in nanoscale MOSFETsFrank, David J. et al. | 2000
- 493
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Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC-Vand capacitance transient techniques(dagger)Busseret, C. et al. | 2000
- 493
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Discharge mechanisms modeling in LPCVD silicon nanocrystals using C-V and capacitance transient techniquesBusseret, C. / Souifi, A. / Baron, T. et al. | 2000
- 501
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Subthreshold and scaling of PtSi Schottky barrier MOSFETsCalvet, L.E. et al. | 2000
- 507
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Oxide thickness variation induced threshold voltage fluctuations in decanano MOSFETs: a 3D density gradient simulation studyAsenov, A. et al. | 2000
- 517
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Influence of defects on elastic gate tunneling currents through ultrathin SiO2gate oxides: predictions from microscopic modelsStädele, M. et al. | 2000
- 525
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Extraordinarily high drive currents in asymmetrical double-gate MOSFETsFossum, Jerry G. et al. | 2000
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Index to Volumes 27 & 28| 2000