Microelectronic engineering : an international journal of semiconductor manufacturing technology
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1
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Preface to the Micro and Nano Engineering 1999 proceedings publication| 2000
- 5
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System-On-Chip: A Way Around Lithography LimitationsBaldi, L. et al. | 2000
- 13
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Image Formation in EUV Lithography: Multilayer and Resist PropertiesCerrina, F. et al. | 2000
- 21
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Photon confinement effects - from physics to applicationsForchel, A. et al. | 2000
- 29
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Advanced mesoscopic device concepts and technologyHasegawa, Hideki et al. | 2000
- 37
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Ion Projection Lithography: Progress of European MEDEA & International ProgramKaesmaier, Rainer et al. | 2000
- 47
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MEMS: Quo Vadis in Century XXI ?Muller, Richard S. et al. | 2000
- 55
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Prospects for Charged Particle Lithography as a Manufacturing TechnologyPease, R.Fabian et al. | 2000
- 61
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PREVAIL: Proof-of-Concept System and ResultsPfeiffer, Hans C. et al. | 2000
- 67
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Fabrication of Patterned Media for High Density Magnetic StorageRoss, C.A. et al. | 2000
- 69
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High-performance and Damage-free Plasma Etching Processes for Future ULSI PatterningSamukawa, Seiji et al. | 2000
- 77
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Soft x-rays for deep sub-100 nm lithography, with and without masksSmith, Henry I. et al. | 2000
- 87
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Probing the Limits of Optical Lithography: The Fabrication of Sub-100nm Devices with 193nm Wavelength LithographyCirelli, R.A. et al. | 2000
- 91
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CD Dispersion Across the Lens Field: Influence on Transistor CharacteristicsToublan, O. et al. | 2000
- 95
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Deep-Ultraviolet Contact PhotolithographyGoodberlet, James G. et al. | 2000
- 101
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A 2 million transistor digital signal processor with 120 nm gates fabricated by 248 nm wavelength phase shift technologyWatson, G.P. et al. | 2000
- 105
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Wide band gap fluoride dielectric crystals doped with trivalent rare earth ions as optical materials for 157 nm photolithographySarantopoulou, E. et al. | 2000
- 109
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Determining Mask Effects in Low K1 LithographyMccallum, Martin et al. | 2000
- 113
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248 nm Lithography for 180 nm contact holesRomeo, C. et al. | 2000
- 119
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Sub-wavelength printing using multiple overlapping masksPau, S. et al. | 2000
- 123
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Absorbance and outgasing of photoresist polymeric materials for UV lithography below 193 nm including 157 nm lithographyCefalas, A.C. et al. | 2000
- 129
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High order lens aberration monitorPreuninger, J. et al. | 2000
- 133
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AlSixNy as an Embedded Layer for Attenuated Phase-Shifting Mask in 193 nm and the Utilization of a Chemically Amplified Negative Resist NEB-22 for MaskmakingLoong, Wen-an et al. | 2000
- 137
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Influence of Wafer Chucking on Focus Margin for Resolving Fine Patterns in Optical LithographyUne, A. et al. | 2000
- 141
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A Novel Bottom Antireflective Coating Working for Both KrF and ArF Excimer Laser LithographyWang, L.A. et al. | 2000
- 145
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Maximising the Process Window in Sub-Half-Micron Optical LithographyArthur, G. et al. | 2000
- 149
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Excimer Lasers for 0.1 mm Lithography and BeyondVogler, K. / Stamm, U. / Patzel, R. et al. | 2000
- 149
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Excimer Lasers for 0.1 (micro)m Lithography and BeyondVogler, K. et al. | 2000
- 153
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Optical Proximity Correction by Grey Tone PhotolithographyCui, Zheng et al. | 2000
- 159
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Process development for 30 nm poly gate patterning on 1.2 nm oxideHeitzmann, M. et al. | 2000
- 163
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Fabrication of high density nanostructures gratings (>500Gbit-in2) used as molds for nanoimprint lithographyCarcenac, F. et al. | 2000
- 167
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Fabrication of Single Electron Devices by hybrid (E-Beam-DUV) lithographyPalun, L. et al. | 2000
- 171
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Nanoreplication in polymers using hot embossing and injection moldingSchift, H. et al. | 2000
- 175
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Tri-layer systems for nanoimprint lithography with an improved process latitudeLebib, A. et al. | 2000
- 179
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Fabrication and characterization of vacuum nanoelectronic devicesDriskill-Smith, A.A.G. et al. | 2000
- 183
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Multifunctional AFM-SNOM Cantilever Probes: Fabrication and MeasurementsStopka, M. et al. | 2000
- 187
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Direct Electron Beam Writing of Nanostructures Using Passivated Gold ClustersBedson, T.R. et al. | 2000
- 191
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High resolution magnetic patterning using focused ion beam irradiationVieu, C. et al. | 2000
- 195
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Capacitively- and resistively-coupled single-electron transistorWakaya, F. et al. | 2000
- 199
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Coulomb Blockade in a Silicon-on-Sapphire NanowireDovinos, D. et al. | 2000
- 205
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Inverted modulation-doped n-type Si-Si0.77Ge0.23 heterostructuresDunford, R.B. et al. | 2000
- 209
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Si-Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS processDunford, R.B. et al. | 2000
- 213
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1-f-Noise of Sub-100 nm-MOS-Transistors Fabricated by a Special Deposition and Etchback TechniqueHorstmann, J.T. et al. | 2000
- 217
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Nanofabrication of quantum wires on (100) Si and SiGe by shifted-resist pattern and anisotropic wet etchingGiovine, E. et al. | 2000
- 221
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Combination of Nanoimprint and Scanning Force Lithography for local tailoring of sidewalls of nanometer devicesSchulz, H. et al. | 2000
- 225
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Fabrication of Metallic Multilayer Single Electron Tunneling Devices using Low-energy E-beam LithographyWeimann, Th et al. | 2000
- 229
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Parallel Frequency Readout of an Array of Mass-Sensitive Transducers for Sensor ApplicationsKim, B.H. et al. | 2000
- 233
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Fabrication of Nanostructures using a UV-based imprint techniqueBender, M. et al. | 2000
- 237
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70 nm Features on 140 nm Period Using Evanescent Near Field Optical LithographyAlkaisi, M.M. et al. | 2000
- 241
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Temporal Cross-Section for Carrier Capture by Self-Assembled Quantum DotsRaymond, S. et al. | 2000
- 245
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Self-organized quantum dot formation by ion sputteringFacsko, S. et al. | 2000
- 249
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A sub-micron photoluminescence system for nanostructure characterizationDe Vittorio, M. et al. | 2000
- 253
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Microcontact printing and pattern transfer with a tri-layer processingChen, Y. et al. | 2000
- 257
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Imaging of Si nano-patterns embedded in SiO2 using scanning electron microscopyNagase, M. et al. | 2000
- 261
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Electron beam induced deposition of metallic tips and wires for microelectronics applicationsUtke, I. et al. | 2000
- 265
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Fabrication of MOS-integrated metallic single electron memoriesPépin, A. et al. | 2000
- 271
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Experimental evaluation of arrayed microcolumn lithographyMuray, L.P. et al. | 2000
- 279
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An experimental setup to test the MAPPER electron lithography conceptKampherbeek, B.J. et al. | 2000
- 283
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PREVAIL - Evolution and Properties of Large Area Reduction Projection Electron OpticsStickel, W. et al. | 2000
- 287
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A study of multiple scattering effect with 10 kV e-beam systemJeon, Chan-Uk et al. | 2000
- 291
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Experimental and numerical investigations of photomask substrate heating due to electron beam patterningShamoun, B. et al. | 2000
- 295
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Electron-beam lithography of V-groove quantum wire devicesDwir, B. et al. | 2000
- 299
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Global Space Charge Effect in SCALPELMkrtchyan, M. et al. | 2000
- 305
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Determination of proximity effect parameters and the shape bias parameter in electron beam lithographySeo, Eunsung et al. | 2000
- 309
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Marks for SCALPEL Tool Optics OptimizationFarrow, R.C. et al. | 2000
- 313
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Study of Resist Surface Roughness in EB LithographyYoshida, A. et al. | 2000
- 317
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Application of Neural Network to Enhancing Accuracy of E-Beam Proximity Effect CorrectionLee, S.-Y. et al. | 2000
- 321
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Analysis of a SCALPELTM Multi-Pass Writing StrategyZhu, X. et al. | 2000
- 325
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Fabrication of Semi-Continuous Profile Diffractive Optical Elements for Beam Shaping by Electron Beam LithographyNottola, A. et al. | 2000
- 329
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Performance of New E-Beam Lithography System JBX-9300FSTakemura, H. et al. | 2000
- 333
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A Simple New Method for the Investigation of Process Latitude in E-beam Lithography with Positive Resists.Kudryashov, V.A. et al. | 2000
- 337
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Optimum energy for high resolution low voltage electron beam lithography - Monte Carlo simulations and experimentsPeuker, M. et al. | 2000
- 341
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Resist heating with different writing strategies for high-throughput maskmakingBabin, Sergey et al. | 2000
- 345
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Comparison of PEC approaches for SCALPELStanton, Stuart et al. | 2000
- 349
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A study of electron forward scattering effects on the footwidth of T-gates fabricated using a bilayer of PMMA and UVIIIChen, Y. et al. | 2000
- 353
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Influence of electron acceleration voltage in the cell-projection lithography systemKotera, M. et al. | 2000
- 357
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Thermal Distortion Predictions of a Silicon Wafer during Exposure in a Scalpel ToolGianoulakis, S. et al. | 2000
- 361
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Improved Pattern-Placement Accuracy in E-Beam Lithography via Sparse-Sample Spatial-Phase LockingHastings, J.T. et al. | 2000
- 367
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Etch characteristics of giant magnetoresistive materialsResnick, D.J. et al. | 2000
- 371
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Quantum electron beam probe of sidewall dry-etch damageRahman, M. et al. | 2000
- 375
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SiO2-Si Selectivity in High Density CHF3-CH4 Plasmas: Role of the Fluorocarbon LayerRolland, L. et al. | 2000
- 381
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Resist Removal Process in Dual Damascene Structure Integrating Cu and SiLK(R) for 0.18 (micro)m TechnologyLouis, D. et al. | 2000
- 381
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Resist Removal Process in Dual Damascene Structure Integrating Cu and SiLK for 0.18 mm TechnologyLouis, D. / Arvet, C. / Lajoinie, E. et al. | 2000
- 385
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Synthesis of Silicide Structures by High Energy Ion ProjectionWeidenmüller, U. et al. | 2000
- 391
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Nanopatterning of organic and inorganic materials by holographic lithography and plasma etchingVisconti, P. et al. | 2000
- 395
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SiO2 and Si Etching in Fluorocarbon Plasmas: Coupling of a Surface Model with a Profile Evolution SimulatorKokkoris, G. et al. | 2000
- 399
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Fabrication of Sub-10nm Si-tip Array Coated with Si3N4 Thin Film For Potential NSOM and Liquid Metal Ion Source ApplicationsJung, M.Y. et al. | 2000
- 403
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Resistless patterning of sub-micron structures by evaporation through nanostencilsBrugger, J. et al. | 2000
- 407
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Low temperature electron cyclotron resonance plasma technique for low loss integrated opticsPernas, P.L. et al. | 2000
- 411
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Novel Linear and Crosslinking Polymers for Nanoimprinting with High Etch ResistancePfeiffer, K. et al. | 2000
- 415
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Beam-assisted-etching technique for fabrication of single crystal diamond field emitter tipTaniguchi, J. et al. | 2000
- 419
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Fabrication of Nanostructures in GaNRong, B. et al. | 2000
- 425
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A Triphenylene Derivative as a Novel Negative-positive Tone Resist of 10 Nanometer ResolutionTada, T. et al. | 2000
- 429
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Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake ConditionsPuchner, H. et al. | 2000
- 433
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Monte Carlo study of High performance resists for SCALPEL nanolithographyOcola, L.E. et al. | 2000
- 437
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Overview of the STORM Program Application to 193nm Singe Layer ResistsCroffie, E. et al. | 2000
- 443
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Optimization of an Advanced Positive Tone DUV Photoresist Towards 150 nm and BeyondErcken, M. et al. | 2000
- 449
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Three-Dimensional Resist Development Simulation - Benchmarks and Integration with LithographyPyka, W. et al. | 2000
- 453
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Aqueous base developable epoxy resist for high sensitivity electron beam lithographyArgitis, P. et al. | 2000
- 457
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Bias Printing of APSM Resists for 180 nm Contact HolesTeng, G. et al. | 2000
- 461
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Comparison of negative tone resists NEB22 and UVN30 in e-beam lithographyvan Dodewaard, A.J. et al. | 2000
- 465
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157nm photodissociation of polyamidesCefalas, A.C. et al. | 2000
- 471
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Characterisation of the Ultrasonic Development Process in UVIII ResistYasin, Shazia et al. | 2000
- 475
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Highly Sensitive Positive Surface Modification ResistsShirai, M. et al. | 2000
- 479
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Acid Diffusion Analysis in the Chemically Amplified CARL ResistRichter, E. et al. | 2000
- 485
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High sensitive negative silylation process for 193nm lithographyEndo, M. et al. | 2000
- 489
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Development mechanism study by dissolution monitoring of positive methacrylate photoresistsRaptis, I. et al. | 2000
- 493
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Use of SU-8 photoresist for very high aspect ratio x-ray lithographyBogdanov, A.L. et al. | 2000
- 497
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Application of calixarene for nanometer magnetic particle fabricationJedrasik, P. et al. | 2000
- 501
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High Density Fluorocarbon Plasma Etching of New Resists Suitable for Nano-Imprint LithographyGaboriau, F. et al. | 2000
- 509
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Fabrication of a Micromachined Magnetic X-Y-Z Scanner for Parallel Scanning Probe ApplicationsRothuizen, H. et al. | 2000
- 513
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Micro-Technology for Anti- CounterfeitingLee, R.A. et al. | 2000
- 517
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Fabrication of NMR - Microsensors for Nanoliter Sample VolumesDechow, J. et al. | 2000
- 521
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Nanoimprint- and UV-lithography: Mix&Match process for fabrication of interdigitated nanobiosensorsMontelius, L. et al. | 2000
- 525
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A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs Above 10 kVMankowski, V. et al. | 2000
- 531
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Coding Gray-tone Mask for Refractive Microlens FabricationYao, Jun et al. | 2000
- 535
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A new lithography technique using super-resolution near-field structureKuwahara, M. et al. | 2000
- 539
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Three-Dimensional Microstructure Elements Fabricated By Electron Beam Lithography and Dry Etching TechniqueSteingrüber, R. et al. | 2000
- 543
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Micromachined silicon grisms: high resolution spectroscopy in the near infraredCianci, E. et al. | 2000
- 547
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Microstructures etched in doped TMAH solutionsBrida, S. et al. | 2000
- 553
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Submicron semiconductor structure for microwave detectionAsmontas, S. et al. | 2000
- 557
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Replication of 3D-micro- and nanostructures using different UV-curable polymersRudschuck, St et al. | 2000
- 561
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A micromachined bistable 1x2 switch for optical fibersPieri, F. et al. | 2000
- 565
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A micromachined Xenon flow regulator for space applicationsDiligenti, A. et al. | 2000
- 569
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A Structure Definition Technique for 25 nm Lines of Silicon and Related MaterialsHilleringmann, U. et al. | 2000
- 573
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A silicon microfabricated electrostatic transducer: 1 MHz transmission in air and in waterCaliano, G. et al. | 2000
- 577
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Flexible, Reliable and Simple Fabrication of Integrated Spot Size Converters with Shifting Mask TechniqueSteingrüber, R. et al. | 2000
- 581
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High-value MOS capacitor arrays in ultradeep trenches in siliconRoozeboom, F. et al. | 2000
- 587
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Overlay Performance of SR Lithography in 64M DRAM LayersSumitani, H. et al. | 2000
- 591
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Using X-ray Lithography to make sub 100 nm MMICsSelzer, Robert Bob et al. | 2000
- 595
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Fine pattern fabrication of a-type Ta on a membrane for X-ray mask absorber using ECR ion stream etchingTsuchizawa, T. et al. | 2000
- 599
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3D Microstructures Fabricated By Partially Opaque X-Ray Lithography MasksCabrini, S. et al. | 2000
- 605
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Ion Projection Lithography for Resistless Patterning of Thin Magnetic FilmsBruenger, W.H. et al. | 2000
- 609
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Dry Etch Improvements in the SOI Wafer Flow Process for IPL Stencil Mask FabricationLetzkus, F. et al. | 2000
- 613
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Temperature and energy spread investigations of alloy LMISBischoff, L. et al. | 2000
- 617
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Comparison of experimental and Monte Carlo results of stochastic Coulomb interaction in projection beam lithographyde Jager, P.W.H. et al. | 2000
- 623
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Modeling Pattern Transfer in Ion-Beam Lithography MasksFrisque, G. et al. | 2000
- 627
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The Birefringence and Polarization Effects of Amorphous Ge and Si Gratings by Focused-Ion-BeamShin, Kyung et al. | 2000
- 631
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Electroabsorption in a GaAs n-i-p-i Structure with Selective Contacts Fabricated by Focused Ion Molecular Beam EpitaxyVijendran, S. et al. | 2000
- 637
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Application of Scanning Probe Microscopy for the determination of the structural accuracy of high aspect ratio microstructuresAchenbach, S. et al. | 2000
- 641
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Multilayer integrated-circuit imaging with contrast enhancement in a large-area, high-resolution electron-beam systemWeaver, D.J. et al. | 2000
- 645
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X-ray nano-diffraction: 100 nm resolution obtained in a novel imaging technique for strain measurement at buried interfacesLagomarsino, S. et al. | 2000
- 649
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Development of a secondary-electron detection system for high-speed high-sensitivity inspection SEM imagingTakafuji, A. et al. | 2000
- 653
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High Resolution and High Sensitivity Near-Field Optical MicroscopeFreyland, J.M. et al. | 2000
- 659
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Mitigation of surface contamination from resist outgassing in EUV lithographyMertens, B.M. et al. | 2000
- 663
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A proposal of high power EUV lithography illumination system using synchrotron radiationGomei, Y. et al. | 2000
- 667
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A Liquid-Xenon-Jet Laser-Plasma X-Ray and EUV SourceHansson, B.A.M. et al. | 2000
- 671
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Theoretical Estimation of Absorption Coefficients of Various Polymers at 13 n mMatsuzawa, Nobuyuki N. et al. | 2000
- 677
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Fabrication of stair-case profiles with high aspect ratios for blazed diffractive optical elementsDavid, C. et al. | 2000
- 681
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Comparison of Extreme Ultraviolet Sources for Lithography ApplicationsBanine, V.Y. et al. | 2000
- 685
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Nanostructuring of Zone Plates for Helium Atom Beam FocusingRehbein, S. et al. | 2000
- 689
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Prediction of Resolution using wet-develop type single layer and dry-development process for EUV lithographyMori, Shigeyasu et al. | 2000