Microelectronic engineering : an international journal of semiconductor manufacturing technology
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 3
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40 years MOS technology - from empiricism to scienceBalk, P. et al. | 1999
- 7
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Outlook of MOS Devices Into Next CenturyIwai, H. et al. | 1999
- 17
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The initial growth steps of ultrathin gate oxidesHattori, T. / Nohira, H. / Takahashi, K. et al. | 1999
- 25
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Understanding the Limits of Ultrathin SiO2 and Si-O-N Gate Dielectrics for Sub-50 nm CMOSGreen, M. L. / Sorsch, T. W. / Timp, G. L. et al. | 1999
- 31
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The role of native traps on the tunneling characteristics of ultra-thin (1.5-3 nm) oxidesGhetti, A. / Sangiorgi, E. / Sorsch, T. W. et al. | 1999
- 35
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Novel mechanisms in nm-thick gate SiO2 growth at low temperatures utilizing activated oxygenFuyuki, T. / Futatsuyama, T. / Ueda, Y. et al. | 1999
- 39
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The Effects of Ge Content in Poly-Si1-xGex Gate Material on the Tunneling Barrier in PMOS DevicesShanware, A. / Massoud, H. Z. / Acker, A. et al. | 1999
- 43
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X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitridesHoussa, M. / De Gendt, S. / de Bokx, P. et al. | 1999
- 47
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Investigation of temperature acceleration of thin oxide time-to-breakdownKaczer, B. / Degraeve, R. / Pangon, N. et al. | 1999
- 51
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Reliability of Ultra Thin Oxide and Nitride Films in the 1 nm to 2 nm RangeYuwono, B. / Schloesser, T. / Gschwandtner, A. et al. | 1999
- 55
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Ultra Thin High Quality Stack Nitride/Oxide Gate Dielectrics Prepared by in-situ Rapid Thermal N2O Oxidation of NH3-nitrided SiSong, S. C. / Luan, H. F. / Lee, C. H. et al. | 1999
- 59
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Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted siliconBauer, A. J. / Beichele, M. / Herden, M. et al. | 1999
- 63
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Photoelectron Yield Spectroscopy of Electronic States at Ultrathin SiO2/Si InterfacesMiyazaki, S. / Maruyama, T. / Kohno, A. et al. | 1999
- 67
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Ultrathin nitrided gate dielectrics by plasma-assisted processingGusev, E. P. / Buchanan, D. A. / Jamison, P. et al. | 1999
- 71
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A Study of Atomically-Flat SiO2/Si Interface Formation Mechanism, Based on the Radical Oxidation KineticsItoh, H. / Nagamine, M. / Satake, H. et al. | 1999
- 75
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Effect of local surface structure on electronic properties of hydrogenated silicon surfacesDittrich, T. / Timoshenko, V. Y. / Schwartzkopff, M. et al. | 1999
- 79
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Al/SiO2(2.0-2.5 nm)/p-Si tunnel junction as a light emitterAsli, N. / Gastev, S. V. / Grekhov, I. V. et al. | 1999
- 83
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Characteristics of ultrathin [4-7 nm] gate oxides for SiGe quantum well MOS structuresKar, S. / Zaumseil, P. et al. | 1999
- 89
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Network transformation processes during oxidation of siliconPasquarello, A. et al. | 1999
- 95
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Polar Phonon Scattering at the Si-SiO2 InterfaceLu, J. Q. / Koch, F. et al. | 1999
- 101
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Simulation of the Drain-Current Characteristics of MOSFETs with Ultrathin Oxides in the Presence of Direct TunnelingShiely, J. P. / Massoud, H. Z. et al. | 1999
- 105
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The effect of polysilicon grain boundaries on MOS based devicesEccleston, W. et al. | 1999
- 109
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Quantum Mechanical Characterization of E'-Type Centers in a-SiOX FilmsKarna, S. P. / Kurtz, H. A. et al. | 1999
- 113
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Nature of the Pb1 interface defect in (100)Si/SiO2 as revealed by electron spin resonance 29Si hyperfine structureStesmans, A. / Afanas'ev, V. V. et al. | 1999
- 117
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Structure and electronic property of Si(100)/SiO2 interfaceKaneta, C. / Yamasaki, T. / Uchiyama, T. et al. | 1999
- 121
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A New Model for TDDB Lifetime Distribution of SiO2Matsukawa, N. / Kanebako, K. et al. | 1999
- 127
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Dependence of Gate Oxide Integrity on Grown-In Defect Density in Czochralski Grown SiliconLambert, U. / Huber, A. / Grabmeier, J. et al. | 1999
- 131
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Suppression of thermal degradation in standard Si/SiO2 by noble gasesStesmans, A. / Afans'ev, V. V. et al. | 1999
- 135
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Relation between hydrogen and the generation of interface state precursorsSii, H. K. / Zhang, J. F. / Degraeve, R. et al. | 1999
- 139
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Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose 15N ion beam irradiationMaser, K. / Mohr, U. / Leihkauf, R. et al. | 1999
- 143
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Relationship between hole trapping and oxide density in thermally grown SiO2Mrstik, B. J. / Afanas'ev, V. V. / Stesmans, A. et al. | 1999
- 147
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Evidence for Spatial Distribution of Traps in MOS Systems after Fowler Nordheim StressKerber, M. / Schwalke, U. / Innertsberger, G. et al. | 1999
- 151
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Separation of Electron and Hole Traps by Transient Current AnalysisSpinelli, A. S. / Lacaita, A. L. / Rigamonti, M. et al. | 1999
- 155
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Validation of the Voltage Step Technique for Determination of Slow State Density in MOS Gate OxidesSpillane, M. P. / Taylor, S. / Uren, M. J. et al. | 1999
- 159
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Two types of traps at the Si/SiO2 interface characterized by their cross sectionsAlbohn, J. / Fussel, W. / Sinh, N. D. et al. | 1999
- 163
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Turn-around effects during dynamic operation in 0.25mm CMOS technology from low to high temperatureBravaix, A. / Goguenheim, D. / Revil, N. et al. | 1999
- 167
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A study of proton generation in Si/SiO2/Si structuresGirault, V. / Devine, R. A. / Warren, W. L. et al. | 1999
- 171
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A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conductionMiranda, E. / Sune, J. / Rodriguez, R. et al. | 1999
- 175
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Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectricMorokov, Y. N. / Novikov, Y. N. / Gritsenko, V. A. et al. | 1999
- 181
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Characterization of Conductive Oxides on Silicon Using Non-Contact Surface Charge ProfilingRoman, P. / Lee, D. O. / Brubaker, M. et al. | 1999
- 185
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RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditionsLukyanchikova, N. B. / Petrichuk, M. V. / Garbar, N. P. et al. | 1999
- 189
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On the origin of flicker noise in MOSFET'sManeglia, Y. / Bauza, D. et al. | 1999
- 193
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A study of 100 nm channel length asymmetric channel MOSFET by using charge pumpingMahapatra, S. / Rao, V. R. / Parikh, C. D. et al. | 1999
- 199
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Advanced cleaning for the growth of ultrathin gate oxideMertens, P. W. / Bearda, T. / Houssa, M. et al. | 1999
- 207
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Thermal dry oxidation of Si1-x-yGexCy strained layers grown on siliconGarrido, B. / Cuadras, A. / Bonafos, C. et al. | 1999
- 211
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Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor DepositionMasson, P. / Morfouli, P. / Autran, J. L. et al. | 1999
- 215
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The effects of radiation-induced defects on H+ transport in SiO2Stahlbush, R. E. et al. | 1999
- 219
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Surface Potential Influence on Defect Passivation Kinetics Probed by Chromium Gated Metal - Oxide - Silicon DevicesRagnarsson, L. A. / Lundgren, P. et al. | 1999
- 223
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Low Temperature-High Pressure Grown Thin Gate Dielectrics for MOS ApplicationsRao, V. R. / Hansch, W. / Mahapatra, S. et al. | 1999
- 227
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SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisationRiley, L. S. / Hall, S. / Harris, J. et al. | 1999
- 231
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Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 filmsvon Borany, J. / Heinig, K. H. / Grotzschel, R. et al. | 1999
- 235
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Characteristics of Novel Polysilicon Oxide by Anodic OxidationYeh, C. F. / Liu, J. S. / Chiang, M. C. et al. | 1999
- 241
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Electronic properties of SiO2/SiC interfacesAfanas'ev, V. V. et al. | 1999
- 249
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Effect of Post Oxidation Processing on Dry Oxides on N-Type 4H-SiCAnthony, C. J. / Uren, M. J. et al. | 1999
- 253
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Reliability of Metal-Oxide-Semiconductor Capacitors on 6H-Silicon CarbideTreu, M. / Schorner, R. / Friedrichs, P. et al. | 1999
- 257
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Degradation of 6H-SiC MOS Capacitors Operated at High TemperaturesBassler, M. / Afanas'ev, V. V. / Pensl, G. et al. | 1999
- 261
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Oxidation of 6H-SiC(0001)Simon, L. / Kubler, L. / Ermolieff, A. et al. | 1999
- 265
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Electrical characterization of the amorphous SiC-pSi structureLysenko, V. S. / Tyagulski, I. P. / Gomeniuk, Y. V. et al. | 1999
- 269
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Dangling Bond Defects in SiC: the Dependence on Oxidation TimeMacfarlane, P. J. / Zvanut, M. E. et al. | 1999
- 273
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A simple method for the evaluation of the recombination parameters in SiC MOS structuresRudenko, T. / Sveinbjrnsson, E. / Sadeghi, M. et al. | 1999
- 277
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Defect Studies in Epitaxial SiC-6H Layers on Insulator (SiCOI)Hugonnard-Bruyere, E. / Cantin, J. L. / von Bardeleben, H. J. et al. | 1999
- 283
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Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source.Mooney, M. B. / Hurley, P. K. / O'Sullivan, B. J. et al. | 1999
- 287
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Structural Properties of Thin Films of High Dielectric Constant Materials on SiliconLu, H. C. / Yasuda, N. / Garfunkel, E. et al. | 1999
- 291
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The Effects of Chemical Bonding and Band Offset Constraints at Si-Dielectric Interfaces on the Integration of Alternative High-K Dielectrics into Aggressively-Scaled CMOS Si DevicesLucovsky, G. / Phillips, J. C. et al. | 1999
- 295
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Modeling the Trends in Valence-Band Electron Tunneling in NMOSFETs with Ultrathin SiO2 and SiO2/Ta2O5 Dielectrics with Oxide ScalingShanware, A. / Massoud, H. Z. / Vogel, E. et al. | 1999
- 299
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A Novel Low-Temperature (Ba,Sr)TiO3(BST) Process with Ti/TiN Barrier for Gbit DRAM ApplicationsBeitel, G. / Wendt, H. / Fritsch, E. et al. | 1999
- 303
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Charge Redistribution at GaN-Ga2O3 Interfaces: A Microscopic Mechanism for Low Defect Density Interfaces in Remote Plasma Processed MOS Devices Prepared on Polar GaN FacesTherrien, R. / Niimi, H. / Gehrke, T. et al. | 1999
- 307
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The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectricsYang, H. / Niimi, H. / Wu, Y. et al. | 1999
- 313
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Recent Advances in Wafer Bonding of Silicon and Alternative MaterialsBlackstone, S. et al. | 1999
- 319
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Physics and characterization of transient effects in SOI transistorsLacaita, A. L. / Perron, L. M. et al. | 1999
- 327
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CMOS/SOI Technologies for Low-Power and Low-Voltage CircuitsPelloie, J. L. / Raynaud, C. / Faynot, O. et al. | 1999
- 335
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Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditionsRebohle, L. / Revesz, A. G. / Skorupa, W. et al. | 1999
- 339
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Investigation of SOI MOSFETs with Ultimate ThicknessErnst, T. / Munteanu, D. / Cristoloveanu, S. et al. | 1999
- 343
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High-Amplitude and High-Frequency Oscillations of Temperature and Current in SOI StructureDobrovolsky, V. N. / Ischuk, L. V. / Ninidze, G. K. et al. | 1999
- 347
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The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide filmsZvanut, M. E. / Chun, W. / Stahlbush, R. E. et al. | 1999
- 351
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Designing MOS/SOI Transistors for High Frequency and Low Voltage ApplicationsFerlet-Cavrois, V. / Bracale, A. / Marcandella, C. et al. | 1999
- 355
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Model for the Extraction of the Recombination Lifetime in Partially Depleted SOI MOSFETsMunteanu, D. / Cristoloveanu, S. et al. | 1999
- 359
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Hydrogen Thermal Stability in Buried Oxides of SOI StructuresBallutaud, D. / Boutry-Forveille, A. / Nazarov, A. et al. | 1999
- 363
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Reactions and diffusion during annealing-induced H+ generation in SOI buried oxidesVanheusden, K. / Fleetwood, D. M. / Devine, R. A. et al. | 1999
- 367
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Direct Sub-mm Lateral Patterning of SOI by Focused Laser Beam Induced OxidationDeutschmann, R. A. / Huber, M. / Neumann, R. et al. | 1999
- 371
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Sub-band-gap impact ionization events in transient regimes of floating body SOI devicesIonescu, A. M. / Chovet, A. et al. | 1999
- 375
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Theory of the MOS/SOI Tunnel DiodeBadri, M. / Majkusiak, B. et al. | 1999
- 379
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Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxideNazarov, A. N. / Barchuk, I. P. / Lysenko, V. S. et al. | 1999
- 383
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Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technologyAntonova, I. V. / Popov, V. P. / Stas, V. F. et al. | 1999
- 389
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Low voltage flash memory by use of a substrate biasMastrapasqua, M. et al. | 1999
- 395
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Oxide Scaling Limit for Future Logic and Memory TechnologyStathis, J. H. / DiMaria, D. J. et al. | 1999
- 403
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Reliability of thin dielectric for non-volatile applicationsModelli, A. et al. | 1999
- 411
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Charge Trapping in ONO Interpoly Dielectric of FLOTOX EEPROM CellsBrucklmeier, E. / Kux, A. / Kakoschke, R. et al. | 1999
- 415
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SILC in MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate MaterialHoutsma, V. E. / Holleman, J. / Salm, C. et al. | 1999
- 419
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The impact of SILC to data retention in sub-half-micron Embedded EEPROMsTao, G. / Cop, R. / Dijkstra, J. et al. | 1999
- 423
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Off-Stochiometric Silicon Oxides for Applications in Low-Voltage Flash MemoriesIrrera, F. / Russo, F. et al. | 1999
- 427
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Degradation and Breakdown of SiO2-Layers due to Hot and Ballistic Electron TransportFitting, H. J. / Schreiber, E. / Barfels, T. et al. | 1999
- 431
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Growth of Si nuclei on SiO2 for quantum dot memory applicationsVizoso, J. / Martin, F. / Martinez, X. et al. | 1999