Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 531
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Localized thinning of GaAs-GaAlAs nanostructures by a combined scanning electron micrograph- focus ion beam system for high-quality cross-sectional transmission electron microscopy samplesAssayag, G.Ben et al. | 1993
- 536
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Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched featuresHobson, W.S. et al. | 1993
- 542
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Influence of substrate temperature on the growth of InGaAs layers on (111)B GaAsYoo, H.M. et al. | 1993
- 546
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Dry surface cleaning of plasma-etched high electron mobility transistorsPearton, S.J. et al. | 1993
- 551
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Dry etching of CdTe-GaAs epilayers using CH4-H2 gas mixturesNeswal, M. et al. | 1993
- 556
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Digital etching of III-V multilayered structures combined with laser ionization mass spectroscopy: Photon-assisted depth profilingBourne, Orson L. et al. | 1993
- 562
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Surface morphology and quality of strained InGaAs grown by molecular-beam epitaxy on GaAsYoon, Soon Fatt et al. | 1993
- 567
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Effect of substrate temperature on ultrahigh vacuum interfaces of indium oxide-GaAs(110)Golan, A. et al. | 1993
- 572
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Annealing behavior of Au(Te)-n-GaAs contactsPiotrowska, A. et al. | 1993
- 581
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Lateral straggle of Si and Be focused-ion beam implanted in GaAsVignaud, D. et al. | 1993
- 587
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Effect of crystalline defects on electrical properties of heavily Si-doped strain-relaxed In0.5Ga0.5As layers grown by molecular beam epitaxy on GaAsChang, James S.C. et al. | 1993
- 593
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Photoluminescence and Hall characterization of pseudomorphic GaAs-InGaAs-AlGaAs heterostructures grown by molecular-beam epitaxyMoreira, M.V.Baeta et al. | 1993
- 601
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Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs-GaAs superlattice channelsMoreira, M.V.Baeta et al. | 1993
- 610
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Electron-induced nitridation of GaAs(100) with ammoniaSun, Y.-M. et al. | 1993
- 614
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Determination of the mechanical stress in plasma enhanced chemical vapor deposited SiO2 and SiN layersAmbrée, P. et al. | 1993
- 618
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Selective reactive ion etching in SiCl4-SiF4 plasmas for gate recess in GaAs-AlGaAs modulation-doped field effect transistorsBallegeer, D.G. et al. | 1993
- 628
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Fabrication of nanostructures with multilevel architectureTaylor, R.P. et al. | 1993
- 634
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Integrated electrostatically resonant scan tip for an atomic force microscopeKong, L.C. et al. | 1993
- 642
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Fabrication and characterization of electron beam evaporated silicon field emitter arraysMyers, G.P. et al. | 1993
- 647
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Influences of gases on the field emissionItoh, S. et al. | 1993
- 651
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Local modification of HF-treated silicon (100) surface and its characterization by scanning tunneling microscopy and spectroscopyPérez-Murano, F. et al. | 1993
- 658
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Multiple-exposure interferometric lithographyZaidi, Saleem H. et al. | 1993
- 667
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Properties of electromagnetic fields in x-ray lithographic masks: Guided modes and beam propagation calculusKupka, R.K. et al. | 1993
- 681
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Modeling of positive-tone silylation processes for 193-nm lithographyHartney, Mark A. et al. | 1993
- 688
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Fluorescence behavior of diazonaphthoquinone-type photoresist materialsVleggaar, J.J.M. et al. | 1993
- 699
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Cleaning of silicon surfaces by argon microwave multipolar plasmas excited by distributed electron cyclotron resonanceRaynaud, P. et al. | 1993
- 709
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Electronic defects induced in p- and n-type silicon by SF6 plasma etchingBelkacem, A. et al. | 1993
- 717
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High-resolution reactive ion etching of SiGe alloysCouillard, J.G. et al. | 1993
- 720
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Two precursor model for low-pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicateIslamRaja, M.M. et al. | 1993
- 727
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Kinetics and mechanism for desorption of H2O from spin-on-glassTompkins, Harland G. et al. | 1993
- 734
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Silane reduced chemical vapor deposition tungsten as a nucleating step in blanket WMcInerney, E.J. et al. | 1993
- 744
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Evaluation of in situ formed W-Ti and MoSi2 as a diffusion barrier to Al for CoSi2 silicided contactYang, Fann-Mei et al. | 1993
- 752
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Epitaxial surface of NiSi2 (001) studied with low-energy electron diffraction and scanning tunneling microscopyBecker, R.S. et al. | 1993
- 756
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Thermal stability of Mo-Al Schottky metallizations on n-GaAsHuang, T.S. et al. | 1993
- 763
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Patterning of C60 filmsHamza, A.V. et al. | 1993
- 766
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Erratum: "Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive-ion etching" (J. Vac. Sci. Technol. B 10, 3112 (1992))Couillard, J.G. et al. | 1993
- 774
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Preface| 1993
- 775
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Scanning tunneling microscopy study of molecular-beam epitaxial growth of GaAs on GaAs(001)Sudijono, J. et al. | 1993
- 779
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Molecular-beam epitaxy on exact and vicinal GaAs(111) substratesYang, K. et al. | 1993
- 783
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Arsenic reflection from GaAs and AlGaAs surfaces during molecular-beam epitaxySpringThorpe, A.J. et al. | 1993
- 787
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New selective molecular-beam epitaxial growth method for direct formation of GaAs quantum dotsKoguchi, Nobuyuki et al. | 1993
- 791
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Molecular-beam epitaxial growth condition dependence of reflection high-energy electron diffraction dampening and quantum well photoluminescenceBlock, T.R. et al. | 1993
- 795
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Arsenic cluster engineering for excitonic electro-opticsMelloch, M.R. et al. | 1993
- 798
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Structural and electrical properties of low temperature GaInAsMetzger, R.A. et al. | 1993
- 802
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Improved optical properties of low temperature molecular-beam epitaxially grown AlGaAs by In incorporationTomioka, Takeshi et al. | 1993
- 805
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Effect of structural and chemical parameters on the optical properties of highly strained AlGaAs- InGaAs-AlGaAs quantum wellsKaviani, Kian et al. | 1993
- 809
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Multiple quantum wells consisting of InAs-GaAs short-period strained-layer superlattice wells for 1.3-1.55 mm photonic applicationsHasenberg, T.C. et al. | 1993
- 813
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Band offset determination in parabolic and triangular quantum wells of GaAs-AlGaAs and GaInAs-AlInAsKopf, R.F. et al. | 1993
- 817
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Growth and properties of AlInAs-GaInAs alloys and quantum wells on (110) InPBrown, A.S. et al. | 1993
- 820
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Migration-enhanced epitaxial growth of GaAs on Si using (GaAs)1-x(Si2)x-GaAs strained-layer superlattice buffer layersRao, T.Sudersena et al. | 1993
- 823
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Molecular-beam epitaxial growth of arsenide-phosphide heterostructures using valved, solid group V sourcesJohnson, F.G. et al. | 1993
- 826
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Optimization of interfaces in arsenide-phosphide compounds grown by gas source molecular-beam epitaxyMoy, A.M. et al. | 1993
- 830
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Growth of GaxIn1-xP-Ga0.5In0.5P multiple-quantum wires by strain induced lateral layer ordering processChen, A.C. et al. | 1993
- 833
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Measurement of indium desorption activation energy from InP layers by laser induced fluorescenceKuo, Chau-Hong et al. | 1993
- 836
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Nature and origin of residual impurities in high-purity GaAs and InP grown by chemical beam epitaxyRoth, A.P. et al. | 1993
- 840
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Growth of high-purity InP by chemical beam epitaxyRao, T.Sudersena et al. | 1993
- 843
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Interface and relaxation properties of chemical beam epitaxy grown GaP-GaAs structuresFreundlich, A. et al. | 1993
- 847
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Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethaneChin, Albert et al. | 1993
- 851
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Chemical beam epitaxy of InxAs1-xP-InP strained single and multiquantum well structuresBensaoula, A. et al. | 1993
- 854
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Characterization of GaAs-GaAsP strained multiple quantum wells grown by gas-source molecular beam epitaxyHou, H.Q. et al. | 1993
- 857
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Gas-source molecular-beam epitaxy of InGaP and GaAs on strained-relaxed GexSi1-x-SiKuo, J.M. et al. | 1993
- 861
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Optimum growth temperature determination for GaInSb-InAs strained layer superlatticesDavis, J.L. et al. | 1993
- 864
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Molecular-beam epitaxial growth of high-mobility n-GaSbTurner, G.W. et al. | 1993
- 868
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On the interface structure in InAs-AlSb quantum wells grown by molecular-beam epitaxyBolognesi, C.R. et al. | 1993
- 872
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Molecular-beam epitaxial growth of InSb on GaAs and Si for infrared detector applicationsLi, L.K. et al. | 1993
- 875
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Ultraviolet quantum well structures based on ZnS-ZnS1-xSex and ZnS-Zn1-xCdxS multilayers grown by molecular-beam epitaxyVaudo, R.P. et al. | 1993
- 878
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Low-temperature epitaxial growth of Zn chalcogenides on GaAs(001) by postheated molecular beamsYoneta, Minoru et al. | 1993
- 881
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Molecular-beam epitaxy investigation of interface disorder effects in magnetic II-VI quantum wellsHagston, W.E. et al. | 1993
- 885
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Enhancement of Hall mobility in coupled d-doped layers grown by molecular-beam epitaxyCarns, T.K. et al. | 1993
- 889
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On the breakdown of layer-by-layer growth and the spontaneous nucleation of misfit dislocations in molecular-beam epitaxially grown GeSi-SiPerovic, D.D. et al. | 1993
- 892
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Deep level transient spectroscopy and admittance spectroscopy of Si1-xGex-Si grown by gas-source molecular-beam epitaxyLi, S.H. et al. | 1993
- 895
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Luminescence from Si1-xGex-Si quantum wells grown by Si molecular-beam epitaxyFukatsu, S. et al. | 1993
- 899
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Photoluminescence properties of strained molecular-beam epitaxy Si1-xGex-Si multiquantum wellsNoe͏̈l, J.-P. et al. | 1993
- 902
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Molecular-beam epitaxial growth of boron-doped GaAs filmsHoke, W.E. et al. | 1993
- 905
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Effects of As flux on Si d-doped GaAsShih, Y.C.Albert et al. | 1993
- 908
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Cross-sectional imaging of doped layers in epitaxial gallium arsenide films by scanning tunneling microscopyPinnington, T. et al. | 1993
- 912
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Amphoteric doping of Si in InAlAs-InGaAs-InP(311)A heterostructures grown by molecular-beam epitaxyLi, X. et al. | 1993
- 915
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Growth of high-quality p-type GaAs epitaxial layers using carbon tetrabromide by gas source molecular-beam epitaxy and molecular-beam epitaxyHoung, Yu-Min et al. | 1993
- 919
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Growth and characterization of novel multilayer heterostructures for the monolithic integration of resonant-cavity photodiodes and heterojunction bipolar transistorsDodabalapur, A. et al. | 1993
- 922
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Electron intersubband normal incidence absorption in InGaAs-GaAs quantum wellsLi, H.S. et al. | 1993
- 926
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Low growth temperature AlGaAs current blocking layers for use in surface normal optoelectronic devicesRogers, T.J. et al. | 1993
- 929
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Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5-mm wavelength regionChang, T.Y. et al. | 1993
- 932
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Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 mm Fabry-Pérot optical modulatorsHammons, B.E. et al. | 1993
- 935
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Growth of AlGaAs and AlGaAs-GaAs heterostructures on misoriented (110)GaAs and a normal incidence type-II AlAs-AlGaAs quantum well infrared photodetectorHo, Pin et al. | 1993
- 938
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High-speed l= 1.3 mm metal-semiconductor-metal photodetectors on GaAsSacks, R.N. et al. | 1993
- 941
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Quantum well GaAs-AlGaAs shallow-donor far-infrared photoconductors grown by molecular-beam epitaxyGoodhue, W.D. et al. | 1993
- 945
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Strained layer single quantum well double-heterostructure optoelectronic switching laserDocter, D.P. et al. | 1993
- 948
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Molecular-beam epitaxy growth of semiconductor heterostructure optical converter lasers using the InGaAs-AlGaAs materials systemGoodhue, W.D. et al. | 1993
- 952
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Characteristics of modulation-doped quantum well lasers grown by molecular-beam epitaxyShank, S.M. et al. | 1993
- 955
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Blue-green light emitting diodes and laser diodes based on II-VI heterostructures grown on predeposited GaAs buffer layersRen, J. et al. | 1993
- 958
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Effect of Si d doping and growth temperature on the I(V) characteristics of molecular-beam epitaxially grown GaAs-(AlGa)As resonant tunneling devicesHenini, M. et al. | 1993
- 962
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Molecular-beam epitaxial growth and characterization of inverted, pulse-doped AlGaAs-InGaAs-GaAs transistor structuresHoke, W.E. et al. | 1993
- 965
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Reproducible growth and application of AlAs-GaAs double barrier resonant tunneling diodesMars, D.E. et al. | 1993
- 969
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Comparison of pnp and npn InGaAlAs-InGaAs heterojunction bipolar transistorsDodabalapur, A. et al. | 1993
- 972
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High performance heterojunction bipolar transistors grown by molecular-beam epitaxy using novel growth methodChin, Albert et al. | 1993
- 976
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Cryogenic and high temperature operation of Al0.52In0.48P-In0.2Ga0.8As high electron mobility transistorsKuo, J.M. et al. | 1993
- 979
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Molecular-beam epitaxially grown InP-InGaAsP heterostructure for inversion-channel devicesKovacic, S.J. et al. | 1993
- 982
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Transport properties of a two-dimensional electron gas closely separated from an underlying n+ GaAs layer: The fabrication of independent ohmic contacts using molecular beam epitaxial regrowth and in situ focused ion beamsLinfield, E.H. et al. | 1993
- 985
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Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxyHofstra, P.G. et al. | 1993
- 989
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Dry etching of GaAs and AlGaAs by Cl2 in molecular beam epitaxy systemLee, H.G. et al. | 1993
- 992
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Low temperature nitridation of silicon by direct ammonia nitridation in a molecular-beam epitaxy reactorHigman, T.K. et al. | 1993
- 994
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Variations in substrate temperature induced by molecular-beam epitaxial growth on radiatively heated substratesShanabrook, B.V. et al. | 1993
- 998
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Wafer-scale temperature mapping for molecular beam epitaxy and chemical beam epitaxyMiner, C.J. et al. | 1993
- 1003
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Comparison of optical pyrometry and infrared transmission measurements on indium-free mounted substrates during molecular-beam epitaxial growthKatzer, D.S. et al. | 1993
- 1007
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Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxyJohnson, S.R. et al. | 1993
- 1011
-
In situ laser light scattering for monitoring III-V semiconductor film growth by molecular-beam epitaxyYang, K. et al. | 1993
- 1014
-
Laser light scattering detection of InGaAs strained layer relaxation during molecular-beam epitaxial growthCelii, F.G. et al. | 1993
- 1018
-
Molecular-beam epitaxy flux transient monitoring and correction using in Situ reflection mass spectrometryCelii, F.G. et al. | 1993
- 1023
-
Detection and reduction of indium segregation during molecular-beam epitaxial growth of InGaAs-GaAs using in Situ reflection mass spectrometryKao, Y.C. et al. | 1993
- 1027
-
Process control system for improved run-to-run control of molecular-beam epitaxial growth of GaAs-AlxGa1-xAs heterostructuresRobertson Jr, A. et al. | 1993
- 1032
-
Reactions between molten aluminum and pyrolytic boron nitride cruciblesSpringThorpe, A.J. et al. | 1993
- 1036
-
Interface contamination by suboxide transportWood, Colin E.C. et al. | 1993
- 1041
-
Equilibrium gas-phase composition of cracked AsH3 and PH3Robertson Jr, A. et al. | 1993
- 1045
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Generation of fast-switching As2 and P2 beams from ASH3 and PH3 for gas-source molecular-beam epitaxial growth of InGaAs-InP multiple quantum well and superlattice structuresJackson, S.L. et al. | 1993
- 1050
-
Real-time flux monitoring and feedback control of a valved arsenic sourceMattord, T.J. et al. | 1993
- 1053
-
PROCEEDINGS AUTHOR INDEX| 1993
- 1056
-
Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layersWegscheider, Werner et al. | 1993
- 1064
-
Stability of strained Si1-yCy random alloy layersPowell, A.R. et al. | 1993
- 1069
-
Raman scattering of a-Sn-Ge superlattices on Ge (001)Schorer, R. et al. | 1993
- 1073
-
Surface studies during growth of Si1-xGex-Si from gaseous Si and Ge hydridesMokler, S.M. et al. | 1993
- 1077
-
Low-temperature cleaning processes for Si molecular beam epitaxyThompson, P.E. et al. | 1993
- 1083
-
Very narrow SiGe-Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor depositionGrützmacher, D.A. et al. | 1993
- 1089
-
Photoluminescence study of Si1-xGex-Si heterostructures grown by molecular beam epitaxy and ultrahigh vacuum chemical vapor depositionTerashima, Koichi et al. | 1993
- 1097
-
Luminescence studies of confined excitons in pseudomorphic Si-SiGe quantum wells grown by solid source molecular beam epitaxyBrunner, J. et al. | 1993
- 1101
-
On free-exciton behavior in molecular-beam epitaxially grown Si1-xGex quantum wellsRowell, N.L. et al. | 1993
- 1106
-
Characterization of undoped multiple quantum well structuresMisra, R. et al. | 1993
- 1110
-
Electro- and photoluminescence studies from ultrathin SimGen superlatticesPresting, H. et al. | 1993
- 1115
-
Sb surface segregation during heavy doping of Si(100) grown at low temperature by molecular beam epitaxyHobart, K.D. et al. | 1993
- 1120
-
Ge segregation during the growth of a SiGe buried layer by molecular beam epitaxyGodbey, D.J. et al. | 1993
- 1124
-
Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor depositionSedgwick, T.O. et al. | 1993
- 1129
-
Effects of doping on growth in the dichlorosilane-germane systemCampbell, S.A. et al. | 1993
- 1134
-
Epitaxy and doping of Si and Si1-xGex at low temperature by rapid thermal chemical vapor depositionDutartre, D. et al. | 1993
- 1140
-
Angle-resolved magneto-tunneling spectroscopy to probe valence band anisotropy in Si-Si1-xGex quantum wellsKesan, V.P. et al. | 1993
- 1145
-
Evidence of phonon-absorption-assisted electron resonant tunneling in Si-Si1-xGex diodesMatutinovic-Krstelj, Z. et al. | 1993
- 1149
-
Scanning tunneling microscopy and spectroscopy of Si-based heterostructuresYu, E.T. et al. | 1993
- 1154
-
Optically detected magnetic resonance of sharp luminescence from Si-Si1-xGex superlatticesKennedy, T.A. et al. | 1993
- 1159
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SiGe-Si electronics and optoelectronicsWang, Kang L. et al. | 1993
- 1168
-
Modeling of parasitic barrier effects in silicide-Si1-xGex Schottky-barrier infrared detectors fabricated with a silicon sacrificial layerXiao, X. et al. | 1993
- 1172
-
Fabrication of a lateral p-i-n photodiode in a Si-(Si0.8Ge0.2-Si) superlattice-Si-sapphire structureHanafusa, H. et al. | 1993
- 1176
-
High mobility electron gases and modulation-doped field effect transistors fabricated in Si-Si1-xGex by rapid thermal chemical vapor depositionVenkataraman, V. et al. | 1993
- 1179
-
Modeling and characteristics of bistable optoelectronic switches and heterojunction field effect transistors in molecular-beam epitaxially grown SiGe-SiKovacic, S.J. et al. | 1993
- 1186
-
High-performance Si-SiGe heterojunction bipolar transistors grown by molecular-beam epitaxyGruhle, A. et al. | 1993
- 1190
-
Effect of heavy doping on band gap in SiGe base regionsManning, B.M. et al. | 1993
- 1193
-
Electrical characteristics of double-base Si-Si1-xGex-Si heterojunction bipolar transistorsPrinz, Erwin J. et al. | 1993
- 1199
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CUMULATIVE AUTHOR INDEX| 1993