Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1817
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Regular Articles - Effects of surface oxides on field emission from siliconShaw, Jonathan et al. | 2000
- 1825
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Regular Articles - Studies on the interaction between thin film materials and Mo field emitter arraysChalamala, Babu R. et al. | 2000
- 1833
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Regular Articles - Emission sensitivity to tip position of Spindt-type field emittersXie, Chenggang et al. | 2000
- 1840
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Regular Articles - Electron field emission from amorphous carbon nitride synthesized by electron cyclotron resonance plasmaLiu, X.W. et al. | 2000
- 1847
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Regular Articles - Self-assembled gold silicide wires on bromine-passivated Si(110) surfacesRout, B. et al. | 2000
- 1853
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Regular Articles - Mechanism of laser-induced nanomodification on hydrogen-passivated Si(100) surfaces underneath the tip of a scanning tunneling microscopeMai, Z.H. et al. | 2000
- 1858
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Regular Articles - Enhancement of resolution of DNA on silylated mica using atomic force microscopyTang, Jing et al. | 2000
- 1861
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Regular Articles - New polymer materials for nanoimprintingSchulz, H. et al. | 2000
- 1866
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Regular Articles - Bilayer, nanoimprint lithographyFaircloth, Brian et al. | 2000
- 1874
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Regular Articles - Determination of coupled acid catalysis-diffusion processes in a positive-tone chemically amplified photoresistHoule, F.A. et al. | 2000
- 1886
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Regular Articles - Statistical considerations of the overlay error in laser driven point source x-ray lithographyTiszauer, Detlev H. et al. | 2000
- 1890
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Regular Articles - Comparison of Cl2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma sourceTian, W.-C. et al. | 2000
- 1897
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Regular Articles - Control of surface reactions in high-performance SiO2 etchingTatsumi, T. et al. | 2000
- 1903
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Regular Articles - Electron cyclotron resonance plasma etching of InP through-wafer connections at >4 mm-min using Cl2-ArChen, Y.W. et al. | 2000
- 1906
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Regular Articles - Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etchingJonsson, L.B. et al. | 2000
- 1911
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Regular Articles - Anisotropic etching of RuO2 and Ru with high aspect ratio for gigabit dynamic random access memoryYunogami, Takashi et al. | 2000
- 1915
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Regular Articles - Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffersIls, A. et al. | 2000
- 1919
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Regular Articles - Stability and chemical composition of thermally grown iridium-oxide thin filmsChalamala, Babu R. et al. | 2000
- 1923
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Regular Articles - Effects of (Ba, Sr)TiO3 film thickness on electrical properties of (Ba, Sr)TiO3-(Ba, Sr)RuO3 capacitorOh, Se Hoon et al. | 2000
- 1929
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Regular Articles - Effects of composition and N2 plasma treatment on the barrier effectiveness of chemically vapor deposited WSix filmsWang, M.T. et al. | 2000
- 1937
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Regular Articles - Study of forming a p+ poly-Si gate by inductively coupled nitrogen plasma nitridation of the stacked poly-Si layersJuang, M.H. et al. | 2000
- 1942
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Regular Articles - Ion-bombardment effects on PtSi-n-Si Schottky contacts studied by ballistic electron emission microscopyRu, Guo-Ping et al. | 2000
- 1949
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Regular Articles - Effect of ramp rate on the C49 to C54 titanium disilicide phase transformation from Ti and Ti(Ta)Smith, Paul Martin et al. | 2000
- 1953
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Regular Articles - Mosaic structure of various oriented grains in CoSi2-Si(001)Kang, Tae Soo et al. | 2000
- 1957
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Regular Articles - Effect of the first antimony layer on AuZn ohmic contacts to p-type InPYamaguchi, Akira et al. | 2000
- 1962
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Regular Articles - Design and Implementation of optoelectronic interfaces for high-speed burst-mode transmissionsBendé, André Boyoguéno et al. | 2000
- 1967
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Regular Articles - Electroreflectance and photoreflectance studies of surface Fermi level and surface state densities of InP SIN+ structuresHwang, W.C. et al. | 2000
- 1973
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Regular Articles - Passivation of the Ge-InP(110) interface by As interlayers: Interface reactions and band offsetsPreobrajenski, A.B. et al. | 2000
- 1980
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Regular Articles - Polarized laser light scattering applied to surface morphology characterization of epitaxial III-V semiconductor layersGonzález, M.U. et al. | 2000
- 1991
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Regular Articles - Reduction of indium segregation in InGaAs-GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substratesMartini, S. et al. | 2000
- 1997
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Regular Articles - Structural and electrical properties of chemical vapor deposited diamond films doped by B+ implantationWang, S.B. et al. | 2000
- 2001
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Regular Articles - Preparation of C60-doped silica aerogels and the study of photoluminescence propertiesZhou, Bin et al. | 2000
- 2005
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Brief Reports and Comments - Chlorination of Si surfaces under strain conditionsHalicioglu, Timur et al. | 2000
- 2008
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Stability of boron and phosphorus implanted tungsten silicide structures at high temperaturesBashir, R. et al. | 2000
- 2011
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Rapid Communications - Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applicationsEisenbraun, Eric et al. | 2000
- 2016
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Rapid Communications - Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriersRossnagel, S.M. et al. | 2000
- 2021
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Rapid Communications - Observation of fine structures of nanodomains in donor-modified Pb(Zr,Ti)O3 ferroelectricsTan, Qi et al. | 2000
- 2024
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Shop Notes - Sheet resistance nonuniformity for ionized titanium depositionRoss, Keith A. et al. | 2000
- 2027
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Shop Notes - Time-stability measurement and compensation of a scanning probe microscope instrumentHuang, Wenhao et al. | 2000
- 2030
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Errata - Erratum: "Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering" (J. Vac. Sci. Technol. B 18, 144 (2000))Tanzer, T.A. et al. | 2000
- 2033
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Preface| 2000
- 2034
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Spin Dependent Effects and Novel Interface Phenomena - Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistorsKleiman, R.N. et al. | 2000
- 2039
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Spin Dependent Effects and Novel Interface Phenomena - Ferromagnetic III-V heterostructuresOhno, H. et al. | 2000
- 2044
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Spin Dependent Effects and Novel Interface Phenomena - Nickel layers on indium arsenideHill, C.J. et al. | 2000
- 2047
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Spin Dependent Effects and Novel Interface Phenomena - Interfacial scattering of hot electrons in ultrathin Au-Co filmsLu, R.P. et al. | 2000
- 2052
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Spin Dependent Effects and Novel Interface Phenomena - Ferromagnetic MnAs grown on GaAs(001): In situ investigationsKästner, M. et al. | 2000
- 2057
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Spin Dependent Effects and Novel Interface Phenomena - Epitaxial ferromagnetic metal-GaAs(100) heterostructuresChen, L.C. et al. | 2000
- 2063
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Spin Dependent Effects and Novel Interface Phenomena - Enhanced magneto-optical effect in a GaAs:MnAs nanoscale hybrid structure combined with GaAs-AlAs distributed Bragg reflectorsShimizu, H. et al. | 2000
- 2066
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Strain relaxation of InGaAs by lateral oxidation of AlAsMathis, S.K. et al. | 2000
- 2072
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Scanning tunneling microscopy study of organometallic molecules adsorbed on a GaAs(001)-2x4 surfaceKuramochi, Hiromi et al. | 2000
- 2077
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Reflectance anisotropy spectroscopy of the growth of perylene-3,4,9,10-tetracarboxylic dianhydride on chalcogen passivated GaAs(001) surfacesKampen, T.U. et al. | 2000
- 2082
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Schottky barrier height and electron affinity of titanium on AlNWard, B.L. et al. | 2000
- 2088
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfacesShaw, M.J. et al. | 2000
- 2096
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Interface control and band offset at the Ga0.52In0.48P on GaAs heterojunctionCai, C. et al. | 2000
- 2100
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxyHasegawa, Hideki et al. | 2000
- 2109
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Strain Effects and Atomic Level Characterization - Spin-dependent resonant tunneling in double-barrier magnetic heterostructuresPetukhov, A.G. et al. | 2000
- 2114
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Band Alignment Tuning in Contacts and Heterostructures - Schottky barrier tuning with heterovalent interlayers: Al-Ge-GaAs versus Al-Si-GaAsBerthod, C. et al. | 2000
- 2119
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Band Alignment Tuning in Contacts and Heterostructures - Tunable Schottky barrier contacts to InxGa1-xAsMarinelli, C. et al. | 2000
- 2128
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Band Alignment Tuning in Contacts and Heterostructures - Photoemission results on intralayer insertion at III-V-III-V junctions: A critical appraisal of the different interpretationsMoreno, M. et al. | 2000
- 2139
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - Epitaxial oxide thin films on Si(001)Yu, Z. et al. | 2000
- 2146
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - Epitaxial thin films of MgO on Si using metalorganic molecular beam epitaxyNiu, F. et al. | 2000
- 2153
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - Hot carrier transport effects in Al2O3-based metal-oxide-semiconductor structuresLudeke, R. et al. | 2000
- 2160
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - Mechanism of dopant segregation to SiO2-Si(001) interfacesDabrowski, J. et al. | 2000
- 2165
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - Roughening of the Si-SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopyGotoh, M. et al. | 2000
- 2169
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - E' centers and leakage currents in the gate oxides of metal oxide silicon devicesLenahan, P.M. et al. | 2000
- 2174
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - Photoemission spectroscopy of platinum overlayers on silicon dioxide filmsKeister, J.W. et al. | 2000
- 2179
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Insulators: Epitaxial Films and Alternative Dielectrics - Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectricsLucovsky, G. et al. | 2000
- 2187
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Quantum Dots and Self-Assembled Interface Structures - Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlatticesStangl, J. et al. | 2000
- 2193
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Quantum Dots and Self-Assembled Interface Structures - Controlled ordering and positioning of InAs self-assembled quantum dotsLee, H. et al. | 2000
- 2197
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Quantum Dots and Self-Assembled Interface Structures - Growth and microstructure of self-assembled ErAs islands in GaAsKadow, C. et al. | 2000
- 2204
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Quantum Dots and Self-Assembled Interface Structures - Evolution of Si-on-GaAs (001) surface morphology towards self-organized ordered Si structuresWang, Z.M. et al. | 2000
- 2210
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Quantum Dots and Self-Assembled Interface Structures - Atomic structure and composition of the (2X4) reconstruction of InGaP(001)Vogt, P. et al. | 2000
- 2215
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Optical Properties - Understanding reflectance anisotropy: Surface-state signatures and bulk-related featuresSchmidt, W.G. et al. | 2000
- 2224
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Optical Properties - In situ reflectance-difference spectroscopy of doped CdTe and ZnTe grown by molecular beam epitaxyBalderas-Navarro, R.E. et al. | 2000
- 2229
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Optical Properties - Surface-induced optical anisotropy of Si and GeRossow, U. et al. | 2000
- 2232
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Optical Properties - In-plane optical anisotropy of quantum well structures: From fundamental considerations to interface characterization and optoelectronic engineeringCortez, S. et al. | 2000
- 2242
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Optical Properties - Optical properties of bulk and thin-film SrTiO3 on Si and PtZollner, Stefan et al. | 2000
- 2255
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Interface Optical Properties - Method for atomic-layer-resolved measurement of polarization fields by nuclear magnetic resonanceKempf, James G. et al. | 2000
- 2263
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - ZnSe-CdTe-ZnSe heterostructuresRubini, S. et al. | 2000
- 2271
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substratesYang, Z. et al. | 2000
- 2274
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - GaInAsP grown on GaAs substrate by solid source molecular beam epitaxy with a valve phosphorous cracker cellZhang, D.H. et al. | 2000
- 2279
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Interface tuning of the InAs-AlSb heterostructure-based quantum wellsIchizli, V.M. et al. | 2000
- 2284
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxyChen, Huajie et al. | 2000
- 2290
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxyPloog, K.H. et al. | 2000
- 2295
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Point defect modification in wide band gap semiconductors through interaction with high-energy electrons: Is reflection high-energy electron diffraction truly benign?Myers, T.H. et al. | 2000
- 2300
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - X-ray studies of group III-nitride quantum wells with high quality interfacesFewster, P.F. et al. | 2000
- 2304
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Charging effects in AlGaN-GaN heterostructures probed using scanning capacitance microscopySmith, K.V. et al. | 2000
- 2309
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Depth-resolved spectroscopy of interface defects in AlGaN-GaN heterostructure field effect transistors device structuresYoung, A.P. et al. | 2000
- 2313
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - ZnO-GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN-Al2O3Hong, S.K. et al. | 2000
- 2322
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Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - Heteroepitaxy and III-Nitride Materials - Polarization effects and transport in AlGaN-GaN systemZhang, Yifei et al. | 2000
- 2328
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CUMULATIVE AUTHOR INDEX| 2000