IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
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Table of contents| 2009
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GUEST EDITORIAL - Special Issue on Vacuum Electron DevicesMenninger, W.L. et al. | 2009
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Special Issue on Vacuum Electron DevicesMenninger, William L. et al. | 2009
- 706
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Phase-Shifted Traveling-Wave-Tube Circuit for Ultrawideband High-Power Submillimeter-Wave GenerationYoung-Min Shin, / Barnett, L.R. / Luhmann, N.C. et al. | 2009
- 706
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SPECIAL ISSUE PAPERS - High Frequency-Microfabrication - Phase-Shifted Traveling-Wave-Tube Circuit for Ultrawideband High-Power Submillimeter-Wave GenerationShin, Y.-M. et al. | 2009
- 713
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Design of Overmoded Interaction Circuit for 1-kW 95-GHz TWTKory, C.L. / Read, M.E. / Ives, R.L. et al. | 2009
- 721
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Microfabricated Silicon High-Frequency Waveguide Couplers and AntennasMarconnet, A.M. / He, M.M. / Sengele, S. et al. | 2009
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Microfabrication and Characterization of a Selectively Metallized W-Band Meander-Line TWT CircuitSengele, S. / Hongrui Jiang, / Booske, J.H. et al. | 2009
- 738
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Characterization and CMRR Modeling of a Carbon-Nanotube Field-Emission Differential AmplifierYong Mui Wong, / Weng Poo Kang, / Davidson, J.L. et al. | 2009
- 744
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Intense Sheet Electron Beam Transport in a Uniform Solenoidal Magnetic FieldNguyen, K.T. / Pasour, J.A. / Antonsen, T.M. et al. | 2009
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Sheet Beams - Intense Sheet Electron Beam Transport in a Uniform Solenoidal Magnetic FieldNguyen, K.T. et al. | 2009
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Computational Design of Asymmetric Electron Beam DevicesIves, R.L. / Attarian, A. / Bui, T. et al. | 2009
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Development of High-Current Sheet Beam Cathodes for Terahertz SourcesLili Li, / Yiman Wang, / Wei Liu, et al. | 2009
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Three-Dimensional Simulations of Coherent Smith–Purcell Radiation Using a Particle-in-Cell CodeGardelle, J. / Donohue, J.T. et al. | 2009
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Cathodes - Correlation Between Emission Behavior and Surface Features of Scandate CathodesWang, Y. et al. | 2009
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Correlation Between Emission Behavior and Surface Features of Scandate CathodesYiman Wang, / Jinshu Wang, / Wei Liu, et al. | 2009
- 786
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Studies on W–Re Mixed-Matrix CathodesRaju, R.S. et al. | 2009
- 794
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In Situ Emission Microscopy of Scandium/Scandium-Oxide and Barium/Barium-Oxide Thin Films on TungstenVaughn, J.M. / Jamison, K.D. / Kordesch, M.E. et al. | 2009
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A Study of Scandia-Doped Pressed CathodesJinshu Wang, / Wei Liu, / Lili Li, et al. | 2009
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Effects of Substrate Bias on Microstructure of Osmium-Ruthenium Coatings for Porous Tungsten Dispenser CathodesWen-Chung Li, / Roberts, S. / Balk, T.J. et al. | 2009
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Review of LaB6, Re-W Dispenser, and BaHfO3-W Cathode DevelopmentTaran, A. et al. | 2009
- 812
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Review of $\hbox{LaB}_{6}$, Re-W Dispenser, and $\hbox{BaHfO}_{3}$-W Cathode DevelopmentTaran, A. / Voronovich, D. / Plankovskyy, S. et al. | 2009
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Demonstration of a 140-GHz 1-kW Confocal Gyro-Traveling-Wave AmplifierJoye, C.D. / Shapiro, M.A. / Sirigiri, J.R. et al. | 2009
- 818
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Gyro-Devices - Demonstration of a 140-GHz 1-kW Confocal Gyro-Traveling-Wave AmplifierJoye, C.D. et al. | 2009
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Highly Efficient Quasi-Optical Mode Converter for a Multifrequency High-Power GyrotronPrinz, O. / Arnold, A. / Gantenbein, G. et al. | 2009
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New Concepts for Quasi-Optical Structures for Use With Gyrotron SystemsPetelin, M. / Erckmann, V. / Hirshfield, J. et al. | 2009
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Modal Transition and Reduction in a Lossy Dielectric-Coated Waveguide for Gyrotron-Traveling-Wave Tube Amplifier ApplicationsChao-Hai Du, / Qian-Zhong Xue, / Pu-Kun Liu, et al. | 2009
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Experimental Study and Analysis of an S-Band Multiple-Beam Klystron With 6% BandwidthAbe, D.K. / Pershing, D.E. / Nguyen, K.T. et al. | 2009
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Klystrons-Multi-Beam Klystrons - Experimental Study and Analysis of an S-Band Multiple-Beam Klystron With 6% BandwidthAbe, D.K. et al. | 2009
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Impact of Nonlinear Memory Effects on Digital Communications in a KlystronCalame, J.P. / Levush, B. et al. | 2009
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High-Power CW Klystron for Fusion ExperimentsBeunas, A. / Marchesin, R. / Bellemere, J.C. et al. | 2009
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Research Progress on X-Band Multibeam KlystronYaogen Ding, / Bin Shen, / Jing Cao, et al. | 2009
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Detailed Analysis of the Interception Current Predicted by the Large-Signal Code TESLA for an Experimental Multiple-Beam KlystronChernyavskiy, I.A. / Abe, D.K. / Levush, B. et al. | 2009
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Broadband High-Power 18-Beam S-Band Klystron Amplifier DesignNguyen, K.T. / Wright, E.L. / Pershing, D.E. et al. | 2009
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Development of an S-band 50-kW-Average-Power KlystronZhaochuan Zhang, / Yaogen Ding, / Junjie Fan, et al. | 2009
- 896
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TWT - 100 W Operation of a Cold Cathode TWTWhaley, D.R. et al. | 2009
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100 W Operation of a Cold Cathode TWTWhaley, D.R. / Duggal, R. / Armstrong, C.M. et al. | 2009
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High-Power C- and X-Band Radar Helix TWTsLaurent, A. / Lefevre, M. / Barsotti, T. et al. | 2009
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Development of High-Power Ka/Q Dual-Band and Communications/Radar Dual-Function Helix-TWTChong, C.K. / Layman, D. / Le Borgne, R.H. et al. | 2009
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Theory and Design of Microwave-Tube Simulator SuiteBin Li, / Zhong Hai Yang, / Jian Qing Li, et al. | 2009
- 928
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Nonstationary Nonlinear Discrete Model of a Coupled-Cavity Traveling-Wave-Tube AmplifierRyskin, N.M. / Titov, V.N. / Yakovlev, A.V. et al. | 2009
- 935
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Accurate Representation of Attenuation in Helix TWT Simulation CodesDialetis, D. / Chernin, D. / Antonsen, T.M. et al. | 2009
- 945
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Three-Dimensional Electromagnetic Analysis of Attenuator-Coated Helix Support Rods of a Traveling-Wave TubeNaidu, V.B. / Datta, S.K. / Rao, P. et al. | 2009
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Three-Dimensional Electromagnetic Analysis of Attenuator-Coated Helix Support Rods of a Traveling-Wave TubNaidu, V.B. / Datta, S.K. / Rao, P. et al. | 2009
- 951
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Accurate Characterization of TWTA Distortion in Multicarrier Operation by Means of a Correlation-Based MethodAloisio, M. / Angeletti, P. / Casini, E. et al. | 2009
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Accurate Characterization of TWTA Distortion in Multicarrier Operation by Means of a Correlation-Based MethoAloisio, M. / Angeletti, P. / Casini, E. et al. | 2009
- 959
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Wide/Multiband Linearization of TWTAs Using PredistortionKatz, A. / Gray, R. / Dorval, R. et al. | 2009
- 965
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Periodic Permanent-Magnet Quadrupole Focusing Lattices for Linear Electron-Beam Amplifier ApplicationsAbe, D.K. / Kishek, R.A. / Petillo, J.J. et al. | 2009
- 974
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An Improved Analysis of PPM Focusing Structures Including the Effect of Magnetic Saturation in the Iron Pole PiecesSantra, M. / Kumar, L. / Balakrishnan, J. et al. | 2009
- 981
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Measuring Return-Loss Resonances to Estimate RF Wall Loss in MM-Wave Coupled-Cavity CircuitsTheiss, A.J. et al. | 2009
- 986
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Effect of Plated Metal Film on the Performance of Helix TWT Slow-Wave StructureYong Han, / Yan-Wen Liu, / Yao-Gen Ding, et al. | 2009
- 992
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Compound Semiconductor Devices - Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current-Voltage Characteristics of 4H-SiC Junction Barrier Schottky DiodesMochizuki, K. et al. | 2009
- 992
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Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current–Voltage Characteristics of 4H-SiC Junction Barrier Schottky DiodesMochizuki, K. / Kameshiro, N. / Onose, H. et al. | 2009
- 992
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Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Currer Voltage Characteristics of 4H-SiC Junction Barrier Schottky DiodesMochizuki, K. / Kameshiro, N. / Onose, H. et al. | 2009
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Importance of the Gate-Dependent Polarization Charge on the Operation of GaN HEMTsAshok, A. / Vasileska, D. / Goodnick, S.M. et al. | 2009
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On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz SpeedYuan, J. / Cressler, J.D. / Krithivasan, R. et al. | 2009
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On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz SpeedsJiahui Yuan, / Cressler, J.D. / Krithivasan, R. et al. | 2009
- 1020
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Dynamic Behavioral Modeling of Nonlinear Microwave Devices Using Real-Time Recurrent Neural NetworkYazi Cao, / Xi Chen, / Gaofeng Wang, et al. | 2009
- 1027
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Molecular and Organic Devices - Printed Nonvolatile Memory for a Sheet-Type Communication SystemSekitani, T. et al. | 2009
- 1027
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Printed Nonvolatile Memory for a Sheet-Type Communication SystemSekitani, T. / Zaitsu, K. / Noguchi, Y. et al. | 2009
- 1036
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Organic Thin-Film Transistor Memory With Nanoparticle Floating GateWei Wang, / Jiawei Shi, / Dongge Ma, et al. | 2009
- 1040
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Study of Multilevel Programming in Programmable Metallization Cell (PMC) MemoryRusso, U. / Kamalanathan, D. / Ielmini, D. et al. | 2009
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Nanoelectronics - Study of Multilevel Programming in Programmable Metallization Cell (PMC) MemoryRusso, U. et al. | 2009
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Single-Electron-Based Flexible Multivalued Exclusive-or Logic GateSang-Jin Kim, / Chang-Keun Lee, / Rae-Sik Chung, et al. | 2009
- 1048
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Quantum Devices and Phenomena - Single-Electron-Based Flexible Multivalued Exclusive-OR Logic GateKim, S.-J. et al. | 2009
- 1056
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Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETsGrasser, T. / Kaczer, B. et al. | 2009
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Reliability - Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETsGrasser, T. et al. | 2009
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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETsMaji, D. / Crupi, F. / Amat, E. et al. | 2009
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Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental StudyIelmini, D. / Sharma, D. / Lavizzari, S. et al. | 2009
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Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part II: Physics-Based ModelingLavizzari, S. / Ielmini, D. / Sharma, D. et al. | 2009
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An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different TechniquesZhigang Ji, / Jian Fu Zhang, / Mo Huai Chang, et al. | 2009
- 1094
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Silicon Devices - Choice of Generation Volume Models for Electron Beam Induced Current ComputationKurniawan, O. et al. | 2009
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Choice of Generation Volume Models for Electron Beam Induced Current ComputationKurniawan, O. / Ong, V.K.S. et al. | 2009
- 1100
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A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/DrainGuojun Zhu, / Xing Zhou, / Teck Seng Lee, et al. | 2009
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On the Limitations of Silicon for I-MOS IntegrationSavio, A. / Monfray, S. / Charbuillet, C. et al. | 2009
- 1118
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Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical SimulationsChao-Ching Cheng, / Chao-Hsin Chien, / Guang-Li Luo, et al. | 2009
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Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurement and Theoretical SimulationsCheng, C.-C. / Chien, C.-H. / Luo, G.-L. et al. | 2009
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Contact Resistance Reduction Technology Using Selenium Segregation for N-MOSFETs With Silicon–Carbon Source/DrainHoong-Shing Wong, / Kah-Wee Ang, / Lap Chan, et al. | 2009
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Vacuum Electron Devices - Design of Helix Pitch Profile for Broadband Traveling-Wave TubesGhosh, T.K. et al. | 2009
- 1135
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Design of Helix Pitch Profile for Broadband Traveling-Wave TubesGhosh, T.K. / Challis, A.J. / Jacob, A. et al. | 2009
- 1141
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High-Frequency Circuit Simulator: An Advanced Three-Dimensional Finite-Element Electromagnetic-Simulation Tool for Microwave TubesLi Xu, / Zhong Hai Yang, / Bin Li, et al. | 2009
- 1152
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Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETsYi Zhao, / Takenaka, M. / Takagi, S. et al. | 2009
- 1152
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BRIEFS - Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETsZhao, Y. et al. | 2009
- 1157
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Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TOAD SimulationsZhao, H. et al. | 2009
- 1157
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Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCAD SimulationsHui Zhao, / Rustagi, S.C. / Ma, F.-J. et al. | 2009
- 1157
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Charge-Based Capacitance Measurement Technique for Nanoscale Devices: Accuracy Assessment Based on TCA SimulationsZhao, H. / Rustagi, S.C. / Ma, F.-J. et al. | 2009
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Effect of Parasitic Resistance and Capacitance on Performance of InGaAs HEMT Digital Logic CircuitsOh, S. / Wong, H.-S.P. et al. | 2009
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[Front cover]| 2009
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IEEE Transactions on Electron Devices publication information| 2009
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IEEE Transactions on Electron Devices information for authors| 2009