Superlattices and microstructures : a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 191
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PrefaceFreitas, Jaime et al. | 2006
- 195
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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspectiveMüller, St.G. / Brady, M.F. / Burk, A.A. et al. | 2006
- 201
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Improvement of cubic silicon carbide crystals grown from solutionEid, J. / Santailler, J.L. / Ferrand, B. et al. | 2006
- 205
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Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactorHemmingsson, C. / Paskov, P.P. / Pozina, G. et al. | 2006
- 214
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High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxyHiroki, M. / Yokoyama, H. / Watanabe, N. et al. | 2006
- 219
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Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion methodArokiaraj, J. / Soh, C.B. / Wang, X.C. et al. | 2006
- 225
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Epitaxial growth of 4H–SiC{0001} and reduction of deep levelsKimoto, T. / Wada, K. / Danno, K. et al. | 2006
- 233
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MOVPE growth study of BxGa(1−x)N on GaN template substrateGautier, S. / Sartel, C. / Ould Saad Hamady, S. et al. | 2006
- 239
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Plasma-assisted molecular beam epitaxy of wurtzite GaMnN displaying ferromagnetism assessed by means of X-ray magnetic circular dichroismSarigiannidou, E. / Monroy, E. / Bellet-Amalric, E. et al. | 2006
- 246
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Structural properties of 10 μm thick InN grown on sapphire (0001)Dimakis, E. / Domagala, J.Z. / Delimitis, A. et al. | 2006
- 253
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Optical properties of nonpolar -plane GaN layersPaskov, P.P. / Paskova, T. / Monemar, B. et al. | 2006
- 253
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Optical properties of nonpolar -plane GaN layersPaskov, P.P. et al. | 2006
- 253
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Optical properties of nonpolar Formula Not Shown -plane GaN layersPaskov, P. P. / Paskova, T. / Monemar, B. et al. | 2006
- 262
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GaN/AlN quantum dot photodetectors at 1.3–1.5 μmDoyennette, L. / Vardi, A. / Guillot, F. et al. | 2006
- 268
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DLTS study of n-type GaN grown by MOCVD on GaN substratesTokuda, Y. / Matsuoka, Y. / Ueda, H. et al. | 2006
- 274
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Time- and frequency-domain measurements of carrier lifetimes in GaN epilayersTamulaitis, G. / Mickevičius, J. / Vitta, P. et al. | 2006
- 279
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Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methodsWeyher, J.L. et al. | 2006
- 289
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Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxyLebedev, V. / Morales, F.M. / Cimalla, V. et al. | 2006
- 295
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AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxyJoblot, S. / Cordier, Y. / Semond, F. et al. | 2006
- 300
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The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layerGloux, F. / Ruterana, P. / Wojtowicz, T. et al. | 2006
- 306
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Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengthsGuillot, F. / Amstatt, B. / Bellet-Amalric, E. et al. | 2006
- 313
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Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaNIliopoulos, E. / Zervos, M. / Adikimenakis, A. et al. | 2006
- 320
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Defect reduction in sublimation grown SiC bulk crystalsSchmitt, Erwin / Straubinger, Thomas / Rasp, Michael et al. | 2006
- 328
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Titanium related luminescence in SiCHenry, A. / Janzén, E. et al. | 2006
- 332
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Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substratesNishikawa, Atsushi et al. | 2006
- 332
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Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on Formula Not Shown -SiC substratesNishikawa, A. / Kumakura, K. / Akasaka, T. et al. | 2006
- 332
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Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on -SiC substratesNishikawa, Atsushi / Kumakura, Kazuhide / Akasaka, Tetsuya et al. | 2006
- 338
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Thermal conductivity, dislocation density and GaN device designMion, C. / Muth, J.F. / Preble, Edward A. et al. | 2006
- 343
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Electrical characterization of Schottky diodes based on boron doped homoepitaxial diamond films by conducting probe atomic force microscopyAlvarez, J. / Houzé, F. / Kleider, J.P. et al. | 2006
- 350
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New results on diffusion lengths measurements in wide bandgap semiconductors, obtained from steady state photocarrier gratings (SSPG)Niehus, M. / Schwarz, R. et al. | 2006
- 359
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Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiCCordier, Y. / Chenot, S. / Laügt, M. et al. | 2006
- 363
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Technology aspects of GaN-based diodes for high-field operationMutamba, Kabula / Yilmazoglu, Oktay / Sydlo, Cezary et al. | 2006
- 369
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Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AlInN on an N-face GaN surfaceRizzi, F. / Edwards, P.R. / Watson, I.M. et al. | 2006
- 373
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Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111)Roccaforte, F. / Iucolano, F. / Alberti, A. et al. | 2006
- 380
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Commercial SiC device processing: Status and requirements with respect to SiC based power devicesTreu, M. / Rupp, R. / Blaschitz, P. et al. | 2006
- 388
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Deep SiC etching with RIELazar, M. / Vang, H. / Brosselard, P. et al. | 2006
- 393
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Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2 /Si and SiO2 /SiC interfacesTallarida, Massimo / Sohal, Rakesh / Schmeisser, Dieter et al. | 2006
- 399
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Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodesBluet, J.M. / Ziane, D. / Guillot, G. et al. | 2006
- 405
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High-temperature failure of GaN LEDs related with passivationMeneghini, Matteo / Trevisanello, Lorenzo / Meneghesso, Gaudenzio et al. | 2006
- 412
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New developments for nitride unipolar devices at 1.3–1.5 μm wavelengthsNevou, L. / Tchernycheva, M. / Doyennette, L. et al. | 2006
- 418
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MBE growth of nitride-based photovoltaic intersubband detectorsMonroy, E. / Guillot, F. / Leconte, S. et al. | 2006
- 426
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GaN micromachined FBAR structures for microwave applicationsMüller, A. / Neculoiu, D. / Vasilache, D. et al. | 2006
- 432
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Study of the structural and optical properties of GaN/AlN quantum dot superlatticesSkoulidis, N. / Vargiamidis, V. / Polatoglou, H.M. et al. | 2006
- 440
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UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layersPastor, D. / Hernández, S. / Cuscó, R. et al. | 2006
- 445
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Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xNRoqan, I.S. / Lorenz, K. / O’Donnell, K.P. et al. | 2006
- 452
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Optical studies on a coherent InGaN/GaN layerCorreia, M.R. / Pereira, S. / Alves, E. et al. | 2006
- 458
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Energetics of the 30∘ Shockley partial dislocation in wurtzite GaNBelabbas, I. / Dimitrakopulos, G. / Kioseoglou, J. et al. | 2006
- 464
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Stillinger–Weber parameters for In and N atomsLei, H.P. / Chen, J. / Petit, S. et al. | 2006
- 470
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Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layersYu, C.L. / Chang, S.J. / Chang, P.C. et al. | 2006
- 476
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Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogenSartel, C. / Gautier, S. / Ould Saad Hamady, S. et al. | 2006
- 483
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Morphological properties of AlN and GaN grown by MOVPE on porous Si(111) and Si(111) substratesChaaben, N. / Yahyaoui, J. / Christophersen, M. et al. | 2006
- 490
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Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growthHalidou, I. / Benzarti, Z. / Bougrioua, Z. et al. | 2006
- 496
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Thermodynamic analysis of Si doping in GaNHalidou, I. / Benzarti, Z. / Boufaden, T. et al. | 2006
- 501
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The role of a ZnO buffer layer in the growth of ZnO thin film on Al2O3 substrateKang, Hong Seong / Pang, Seong Sik / Kim, Jae Won et al. | 2006
- 507
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Vertical electron transport study in GaN/AlN/GaN heterostructuresLeconte, S. / Monroy, E. / Gérard, J.-M. et al. | 2006
- 513
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Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystalsPrinz, G.M. / Ladenburger, A. / Feneberg, M. et al. | 2006
- 519
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Hydrogen-free CVD diamond synthesisHiraga, Shinji / Shimada, Shouhei / Takagi, Yoshiki et al. | 2006
- 526
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Diamond particles synthesized with graphite spark method in two secondsHirai, Takayuki / Kawai, Toru / Takagi, Yoshiki et al. | 2006
- 530
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Mn-doped GaN/AlN heterojunction for spintronic devicesDebernardi, Alberto et al. | 2006
- 533
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Optical properties of GaN nanocrystals embedded into silica matricesPodhorodecki, A. / Nyk, M. / Kudrawiec, R. et al. | 2006
- 537
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Optical and structural studies in Eu-implanted AlN filmsPeres, M. / Cruz, A. / Soares, M.J. et al. | 2006
- 545
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Surface confinement of the InN-rich phase in thick InGaN on GaNKim, Taek-Seung / Kim, Sang-Woo / Kim, Han-Ki et al. | 2006
- 551
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- applicationFissel, A. / Czernohorsky, M. / Osten, H.J. et al. | 2006
- 551
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- Formula Not Shown applicationFissel, A. / Czernohorsky, M. / Osten, H. J. et al. | 2006
- 551
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Growth and characterization of crystalline gadolinium oxide on silicon carbide for high- applicationFissel, A. et al. | 2006
- 557
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Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescencePauc, N. / Phillips, M.R. / Aimez, V. et al. | 2006
- 562
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Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMTHa, Min-Woo / Lee, Seung-Chul / Kim, Soo-Seong et al. | 2006
- 567
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New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructureHa, Min-Woo / Lee, Seung-Chul / Choi, Young-Hwan et al. | 2006
- 574
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Energetics of dopant atoms in subsurface positions of diamond semiconductorMiyazaki, Takehide / Kato, Hiromitsu / Ri, Sung-Gi et al. | 2006
- 580
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A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devicesBen Salah, Tarek / Garrab, Hatem / Ghedira, Sami et al. | 2006
- 588
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Semiempirical tight-binding modelling of III-N-based heterostructuresGürel, H. Hakan / Akinci, Özden / Ünlü, Hilmi et al. | 2006
- 598
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Hydrogenated amorphous silicon nitride deposited by DC magnetron sputteringMokeddem, K. / Aoucher, M. / Smail, T. et al. | 2006
- 603
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Modeling of trap-assisted tunneling in AlGaN/GaN heterostructure field effect transistors with different Al mole fractionsAsgari, A. / Karamad, M. / Kalafi, M. et al. | 2006
- 607
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Atomically flat GaMnN by diffusion of Mn into GaN()Dumont, J. / Kowalski, B.J. / Pietrzyk, M. et al. | 2006
- 607
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Atomically flat GaMnN by diffusion of Mn into GaN()Dumont, J. et al. | 2006
- 607
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Atomically flat GaMnN by diffusion of Mn into GaN( Formula Not Shown )Dumont, J. / Kowalski, B. J. / Pietrzyk, M. et al. | 2006
- 612
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Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometryPezoldt, J. / Zgheib, Ch. / Lebedev, V. et al. | 2006
- 619
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Bias sensitive spectral sensitivity in double -SiC:H pin structuresLouro, P. / Fernandes, M. / Fantoni, A. et al. | 2006
- 619
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Bias sensitive spectral sensitivity in double -SiC:H pin structuresLouro, P. et al. | 2006
- 619
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Bias sensitive spectral sensitivity in double Formula Not Shown -SiC:H pin structuresLouro, P. / Fernandes, M. / Fantoni, A. et al. | 2006
- 626
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Ni–Al ohmic contact to p-type 4H-SiCVang, H. / Lazar, M. / Brosselard, P. et al. | 2006
- 632
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Radiation source dependence of device performance degradation for 4H-SiC MESFETsOhyama, H. / Takakura, K. / Uemura, K. et al. | 2006
- 638
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5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substratesZgheib, Ch. / Nassar, E. / Hamad, M. et al. | 2006
- 644
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Al Schottky contact on p-GaSeHuang, Wen-Chang / Su, Shui-Hsiang / Hsu, Yu-Kuei et al. | 2006
- 651
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The influence of doping element on structural and luminescent characteristics of ZnS thin filmsKryshtab, T. / Khomchenko, V.S. / Andraca-Adame, J.A. et al. | 2006