IEEE Transactions on Electron Devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1617
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Table of Contents| 2022
- 1622
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Foreword Special Issue on Spintronics-Devices and CircuitsKaushik, Brajesh Kumar / Aggarwal, Sanjeev / Bandyopadhyay, Supriyo et al. | 2022
- 1629
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Perpendicular Anisotropy Controlled by Seed and Capping Layers of Heusler-Alloy FilmsFrost, William / Samiepour, Marjan / Hirohata, Atsufumi et al. | 2022
- 1634
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Enhanced Electronic and Magnetic Properties of N2O Gas Adsorbed Mn-Doped MoSe2 MonolayerMishra, Neha / Pandey, Bramha P. / Kumar, Brijesh et al. | 2022
- 1642
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Optimal Spin Polarization for Spin–Orbit-Torque Memory and OscillatorFu, Zhenxiao / Shukla, Amit Kumar / Mu, Zhiqiang et al. | 2022
- 1650
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Design of Reconfigurable Spin-Wave Nanochannels Based on Strain-Mediated Multiferroic Heterostructures and Logic Device ApplicationsWang, Fan / Zhu, Mingmin / Qiu, Yang et al. | 2022
- 1658
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Voltage-Controlled Energy-Efficient Domain Wall Synapses With Stochastic Distribution of Quantized Weights in the Presence of Thermal Noise and Edge RoughnessMisba, Walid Al / Kaisar, Tahmid / Bhattacharya, Dhritiman et al. | 2022
- 1667
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Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-FlopsCho, Karam / Liu, Xiangkai / Chen, Zhihong et al. | 2022
- 1677
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Novel Nonvolatile Lookup Table Design Based on Voltage-Controlled Spin Orbit Torque MemoryLiu, Xiao / Deng, Erya / Zhang, He et al. | 2022
- 1683
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A Novel Auto-Write-Stopping Circuit for SHE + STT-MTJ/CMOS Hybrid ALUBarla, Prashanth / Joshi, Vinod Kumar / Bhat, Somashekara et al. | 2022
- 1691
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A 3-Bit Flash Spin-Orbit Torque (SOT)-Analog-to-Digital Converter (ADC)Ghanatian, Hamdam / Farkhani, Hooman / Rezaeiyan, Yasser et al. | 2022
- 1698
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A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS MemoryYang, Zhi / He, Kuiqing / Zhang, Zeqing et al. | 2022
- 1706
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Effects of Temperature and Structural Geometries on a Skyrmion Logic GateTang, Chunli / Alahmed, Laith / Xu, Jihao et al. | 2022
- 1713
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Ferrimagnetic Synapse Devices for Fast and Energy-Efficient On-Chip Learning on Crossbar-Array-Based Neural Networks (A Device-Circuit-System Costudy)Sahu, Upasana / Sisodia, Naven / Muduli, Pranaba Kishor et al. | 2022
- 1721
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Commodity Bit-Cell Sponsored MRAM Interaction Design for Binary Neural NetworkCai, Hao / Bian, Zhongjian / Fan, Zhonghua et al. | 2022
- 1727
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Spin-Orbit Torque Neuromorphic Fabrics for Low-Leakage Reconfigurable In-Memory ComputationLiu, Mingshuo / Borulkar, Payal / Hossain, Mousam et al. | 2022
- 1736
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Energy-Efficient Advanced Data Encryption System Using Spin-Based Computing-in-Memory ArchitectureNisar, Arshid / Dhull, Seema / Shreya, Sonal et al. | 2022
- 1743
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Long Short-Term Memory Implementation Exploiting Passive RRAM Crossbar ArrayNikam, Honey / Satyam, Siddharth / Sahay, Shubham et al. | 2022
- 1752
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Level Scaling and Pulse Regulating to Mitigate the Impact of the Cycle-to-Cycle Variation in Memristor-Based Edge AI SystemFu, Jingyan / Liao, Zhiheng / Wang, Jinhui et al. | 2022
- 1763
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Bipolar Static Induction Transistor With Insulated GateColalongo, Luigi / Richelli, Anna et al. | 2022
- 1769
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Strained Silicon-on-Insulator Platform for Co-Integration of Logic and RF—Part II: Comb-Like Device ArchitectureLiang, Jie / Sun, Chen / Xu, Haiwen et al. | 2022
- 1776
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Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL TreatmentLee, Meng-Chien / Chung, Nien-Ju / Lin, Hung-Ru et al. | 2022
- 1781
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Solution for Model Parameter Optimization and Prediction of Next-Generation Device DC CharacteristicsGil, Gwangnae / Park, Seyoung / Woo, Sola et al. | 2022
- 1786
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Low-Field Mobility and High-Field Velocity of Charge Carriers in InGaAs/InP High-Electron-Mobility TransistorsHarrysson Rodrigues, Isabel / Vorobiev, Andrei et al. | 2022
- 1792
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Enhanced Performance of GaN Schottky Barrier Diodes by Oxygen Plasma TreatmentLi, Xiaobo / Lin, Feng / Wu, Junye et al. | 2022
- 1798
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Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN StructuresNela, Luca / Erine, Catherine / Zadeh, Amirmohammad Miran et al. | 2022
- 1805
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Ferroelectricity of Hf0.5Zr0.5O₂ Thin Films Free From the Influence of Electrodes by Using Al₂O₃ Capping LayersWan, Jiaxian / Chen, Xue / Ji, Liwei et al. | 2022
- 1811
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A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)Huang, Wei-Chen / Chen, Po-Hsun / Chang, Ting-Chang et al. | 2022
- 1816
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Improving Machine Learning Attack Resiliency via Conductance Balancing in Memristive Strong PUFsLarimian, S. / Mahmoodi, M. R. / Strukov, D. B. et al. | 2022
- 1823
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Simulation-Based Study of Low Minimum Operating Voltage SRAM With Inserted-Oxide FinFETs and Gate-All-Around TransistorsWu, Yi-Ting / Ding, Fei / Chiang, Meng-Hsueh et al. | 2022
- 1830
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Implementation of Neuronal Intrinsic Plasticity by Oscillatory Device in Spiking Neural NetworkWu, Lindong / Wang, Zongwei / Bao, Lin et al. | 2022
- 1835
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RRAM Compact Modeling Using Physics and Machine Learning HybridizationLin, Albert S. / Liu, Po-Ning / Pratik, Sparsh et al. | 2022
- 1842
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Impact of Stack Engineering on HfOₓ/Al:HfOₓ-Based Flexible Resistive Memory Devices and Its Synaptic CharacteristicsPaul, A. D. / Biswas, S. / Dalal, A. et al. | 2022
- 1849
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Boolean Logic Function Realized by Phase-Change Blade Type Random Access MemoryLian, Xiaojuan / Wang, Lei et al. | 2022
- 1858
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High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser AnnealingXu, Meng / Hu, Sunjie / Peng, Cong et al. | 2022
- 1864
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Gate Driver Circuit Based on Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Capacitive Coupling EffectLee, Jungwoo / Hong, Yong-Hoo / Jung, Eun Kyo et al. | 2022
- 1870
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A Differential Ring Oscillator With Tail Current Source Control Scheme Using N-Type Oxide TFTsLi, Hui / Deng, Sunbin / Xu, Yuming et al. | 2022
- 1876
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Robust Mobility Enhancement and Comprehensive Reliability Evaluation for Amorphous InGaZnO TFT by Double Layers With Quantum Well StructuresXue, Gaomin / Zou, Zhixiang / Lin, Liang et al. | 2022
- 1883
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Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load InvertersLee, Jae-Yun / Tarsoly, Gergely / Shan, Fei et al. | 2022
- 1889
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An Efficient White-Light Photodetector Based on 2D-SnS2 NanosheetsYadav, Sanjeev Mani / Pandey, Amritanshu et al. | 2022
- 1894
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Ultrasensitive Self-Powered Deep-Ultraviolet Photodetector Based on In Situ Epitaxial Ga₂O₃/Bi₂Se₃ HeterojunctionZhao, Bowen / Li, Kuangkuang / Liu, Qing et al. | 2022
- 1900
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Bulk Electron Accumulation LDMOS With Extended Superjunction GateChen, Weizhong / Qin, Haifeng / Zhang, Hongsheng et al. | 2022
- 1906
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The Root Cause Behind a Peculiar Dual-Mode ON-State Breakdown in High Voltage LDMOSMishra, Aakanksha / Shrivastava, Mayank / Gupta, Ankur et al. | 2022
- 1912
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High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n DiodesSadek, Mansura / Han, Sang-Woo / Song, Jianan et al. | 2022
- 1918
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3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal StructureGuo, Hui / Bai, Haineng / Zhang, Zi-Hui et al. | 2022
- 1924
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Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical RealizationBaker, G. W. C. / Gammon, P. M. / Renz, A. B. et al. | 2022
- 1931
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Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination ExtensionsYates, Luke / Gunning, Brendan P. / Crawford, Mary H. et al. | 2022
- 1938
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1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge TerminationLiu, Xinke / Lin, Feng / Li, Jian et al. | 2022
- 1945
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Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200 °CWang, Yibo / Han, Genquan / Xu, Wenhui et al. | 2022
- 1950
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Interfacial Permittivity Characterization of Heterogeneous Dielectric Bi-LayersMousavi Karimi, Zeinab / Davis, Jeffrey A. et al. | 2022
- 1956
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Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and SolutionHemanjaneyulu, Kuruva / Meersha, Adil / Kumar, Jeevesh et al. | 2022
- 1964
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Experimental Investigation of Ultrathin Al₂O₃ Ex-Situ Interfacial Doping Strategy on Laminated HKMG Stacks via ALDXu, Renren / Yao, Jiaxin / Xu, Gaobo et al. | 2022
- 1972
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An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling OxideLin, Kuan-Wun / Chen, Kung-Chu / Hwu, Jenn-Gwo et al. | 2022
- 1979
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A Wide Temperature Range Unified Undoped Bulk Silicon Electron and Hole Mobility ModelDhillon, Prabjot / Wong, Hiu Yung et al. | 2022
- 1984
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Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film TransistorsYang, Yuyang / Zhang, Meng / Lu, Lei et al. | 2022
- 1989
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Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating SubstratesTakahashi, Katsuya / Tanaka, Hajime / Kaneko, Mitsuaki et al. | 2022
- 1995
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Calculation of Minority Carriers’ Lifetime in HgCdTe Structures by Using the Method Based on Mutual Correlation Between the Concentration of Electrical ParticlesJozwikowski, K. / Jozwikowska, A. / Markowska, O. et al. | 2022
- 2002
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High Performance Flexible Transistors With Polyelectrolyte/Polymer Bilayer DielectricRahi, Sachin / Raghuwanshi, Vivek / Saxena, Pulkit et al. | 2022
- 2009
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Development of Laser-Micromachined 4H-SiC MEMS Piezoresistive Pressure Sensors for Corrosive EnvironmentsWang, Lukang / Zhao, You / Yang, Yu et al. | 2022
- 2015
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Development of Microfluidic System Enabling High-Throughput Characterization of Multiple Biophysical Parameters of Single CellsWang, Ke / Liu, Yan / Chen, Deyong et al. | 2022
- 2023
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A Resonant Differential Pressure Microsensor With Stress Isolation and Au-Au Bonding in PackagingCheng, Chao / Yao, Jiahui / Lu, Yulan et al. | 2022
- 2030
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Multilayer Microstructured High-Sensitive Ultrawide-Range Flexible Pressure Sensor With Modulus GradientLu, Xiaozhou / Meng, Xiangyu / Shi, Yaoguang et al. | 2022
- 2038
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Influence of Source/Drain Catalytic Metal and Fabrication Method on OTFT-Based Hydrogen SensorLi, Bochang / Lai, P. T. / Tang, W. M. et al. | 2022
- 2043
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Output-Power Enhancement of Vircator Based on Second Virtual Cathode Formed by Wall Charge on a Dielectric ReflectorMumtaz, Sohail / Uhm, Hansup / Lim, Jun Sup et al. | 2022
- 2051
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Analysis of the Dual Side-Coupled RF Cavities for the HPM Devices—An Equivalent Circuit ApproachDubey, Garima / Rao, V. Sivavenkateswara / Mahto, Manpuran et al. | 2022
- 2058
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Design of a 330-GHz Frequency-Tunable Gyrotron With a Prebunched CircuitGao, Zi-Chao / Du, Chao-Hai / Li, Fan-Hong et al. | 2022
- 2066
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Carbon Vacancy Assisted Contact Resistance Engineering in Graphene FETsKumar, Jeevesh / Meersha, Adil / Variar, Harsha B. et al. | 2022
- 2074
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Role of Nitrogen in Ferroelectricity of HfxZr1-xO2-Based Capacitors With Metal-Ferroelectric-Insulator-Metal StructureHsieh, Dong-Ru / Lee, Chia-Chin / Chao, Tien-Sheng et al. | 2022
- 2080
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An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping ModeKuk, Song-Hyeon / Han, Seung-Min / Kim, Bong Ho et al. | 2022
- 2088
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Investigation of Device Performance for Fin Angle Optimization in FinFET and Gate-All-Around FETs for 3 nm-Node and BeyondKim, Soyoun / Lee, Kitae / Kim, Sihyun et al. | 2022
- 2094
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BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight UpdateAabrar, Khandker Akif / Kirtania, Sharadindu Gopal / Liang, Fu-Xiang et al. | 2022
- 2101
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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF ApplicationsChang, Shu-Wei / Lu, Tsung-Han / Yang, Cong-Yi et al. | 2022
- 2108
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High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM ArraysFrancois, T. / Coignus, J. / Makosiej, A. et al. | 2022
- 2115
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Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness ScatteringSumita, Kei / Chen, Chia-Tsong / Toprasertpong, Kasidit et al. | 2022
- 2122
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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THzArabhavi, Akshay M. / Ciabattini, Filippo / Hamzeloui, Sara et al. | 2022
- 2130
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Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry EtchingHuang, Bo-Wei / Tsai, Chung-En / Liu, Yi-Chun et al. | 2022
- 2137
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A Neuromorphic Brain Interface Based on RRAM Crossbar Arrays for High Throughput Real-Time Spike SortingShi, Yuhan / Ananthakrishnan, Akshay / Oh, Sangheon et al. | 2022
- 2145
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Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric MemoryXu, Yannan / Yang, Yang / Zhao, Shengjie et al. | 2022
- 2151
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TiOx/Ti/TiOx Tri-Layer Film-Based Waveguide Bolometric Detector for On-Chip Si Photonic SensorShim, Joonsup / Lim, Jinha / Geum, Dae-Myeong et al. | 2022
- 2159
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Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate OperationCapua, Luca / Sprunger, Yann / Elettro, H. et al. | 2022
- 2166
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Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si SubstratesWang, Haibo / Chen, Yue / Zhang, Gong et al. | 2022
- 2173
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Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device PerformanceSang, Pengpeng / Wang, Qianwen / Wei, Wei et al. | 2022
- 2180
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ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTsWu, Wei-Min / Ker, Ming-Dou / Chen, Shih-Hung et al. | 2022
- 2188
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Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm DiameterShao, Yanjie / Pala, Marco / Esseni, David et al. | 2022
- 2196
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Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic StackingDuan, Xinlv / Huang, Kailiang / Feng, Junxiao et al. | 2022
- 2203
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Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETsWang, Yibo / Gong, Hehe / Jia, Xiaole et al. | 2022
- 2210
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A New Charge-Based Analytical Model for the Gate Current in GaN HEMTsYadav, Rohit / Dutta, Aloke K. et al. | 2022
- 2214
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Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical StressLee, Kookjin / Kaczer, Ben / Kruv, Anastasiia et al. | 2022
- 2218
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Improved Synaptic Characteristics of Oxide-Based Electrochemical Random Access Memory at Elevated Temperatures Using Integrated Micro-HeaterLee, Jongwon / Nikam, Revannath Dnyandeo / Kwak, Myonghoon et al. | 2022
- 2222
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Dielectrics for 2D electronics| 2022
- 2224
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From Mega to nano: Beyond one Century of Vacuum Electronics| 2022
- 2226
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TechRxiv: Share Your Preprint Research with the World!| 2022
- 2227
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IEEE Open Access Publishing| 2022
- 2228
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Introducing IEEE Collabratec| 2022
- C1
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Front Cover| 2022
- C2
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IEEE ELECTRON DEVICES SOCIETY| 2022
- C3
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IEEE Transactions on Electron Devices information for authors| 2022