IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 3252
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Looking for Quality in TCAD-Based PapersGhione, Giovanni et al. | 2019
- 3254
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Air Pollution Monitoring Using Near Room Temperature Resistive Gas Sensors: A ReviewGhosh, Ruma / Gardner, Julian W. / Guha, Prasanta Kumar et al. | 2019
- 3265
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HiSIM_IGBT2: Modeling of the Dynamically Varying Balance Between MOSFET and BJT Contributions During Switching OperationsTone, A. / Miyaoku, Y. / Miura-Mattausch, M. et al. | 2019
- 3273
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A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETsParihar, Narendra / Anandkrishnan, R / Chaudhary, Ankush et al. | 2019
- 3279
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Experimental Evaluation of Self-Heating and Analog/RF FOM in GAA-Nanowire FETsSingh, Ramendra / Aditya, Kritika / Veloso, Anabela et al. | 2019
- 3286
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A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETsLin, Yun-Hsuan / Lu, Ying-Hsin / Chang, Ting-Chang et al. | 2019
- 3290
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Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial LayerSun, Hui / Wang, Maojun / Yin, Ruiyuan et al. | 2019
- 3296
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Thermal Spreading Resistance in Ballistic-Diffusive Regime for GaN HEMTsHua, Yu-Chao / Li, Han-Ling / Cao, Bing-Yang et al. | 2019
- 3302
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Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTsZhang, Heng-Shuang / Ma, Xiao-Hua / Zhang, Meng et al. | 2019
- 3310
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A Performance Comparison Between $\beta$ -Ga2O3 and GaN HEMTsKumar, Sandeep / Soman, Rohith / Pratiyush, Anamika Singh et al. | 2019
- 3318
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Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical InvestigationAlfaro Robayo, Diego / Sassine, Gilbert / Rafhay, Quentin et al. | 2019
- 3326
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Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash MemoryKwon, Dae woong / Kim, Do-Bin / Lee, Junil et al. | 2019
- 3331
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Low-Power Crossbar Switch With Two-Varistor Selected Complementary Atom Switch (2V-1CAS; Via-Switch) for Nonvolatile FPGABanno, Naoki / Okamoto, Koichiro / Iguchi, Noriyuki et al. | 2019
- 3337
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Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM ArrayZhang, Xinlei / Ji, Hao / Jiang, Ran et al. | 2019
- 3342
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Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor With a Nitride Charge-Storage LayerKang, Hyungu / Cho, Jinsun / Kim, Yoonjoong et al. | 2019
- 3349
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Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin OxidesAguirre, Fernando Leonel / Rodriguez-Fernandez, Alberto / Pazos, Sebastian Matias et al. | 2019
- 3356
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Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate MemoryAli, T. / Polakowski, P. / Buttner, T. et al. | 2019
- 3365
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Impact of Intrinsic Capacitances on the Dynamic Performance of Printed Electrolyte-Gated Inorganic Field Effect TransistorsFeng, Xiaowei / Punckt, Christian / Marques, Gabriel Cadilha et al. | 2019
- 3371
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Doping Effects of Various Carrier Suppressing Elements on Solution-Processed SnOx-Based Thin-Film TransistorsWang, Zhaogui / Wu, Qian / Li, Minmin et al. | 2019
- 3376
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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETsLahr, Oliver / Zhang, Zhipeng / Grotjahn, Frank et al. | 2019
- 3382
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High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate DielectricYang, Jun / Zhang, Yongpeng / Wu, Qianqian et al. | 2019
- 3387
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High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion ProcessesMonti, Desiree / De Santi, Carlo / Da Ruos, Silvia et al. | 2019
- 3393
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Impedance Elements of Significant Junctions in InGaN Light-Emitting Diodes Studied by Electric Modulus SpectroscopyChien, Forest Shih-Sen / Khasanah, Riza Ariyani Nur / Lin, Pei-Te et al. | 2019
- 3399
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Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar CellSiddharth, Gaurav / Garg, Vivek / Sengar, Brajendra S. et al. | 2019
- 3405
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An Archimedean Copula Function-Based Prediction Method for High-Power White LED Considering Multi-PerformanceSun, Bo / Cao, Yitong / Feng, Qiang et al. | 2019
- 3411
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Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD SimulationsMarcelot, Olivier / Goiffon, Vincent / Magnan, Pierre et al. | 2019
- 3417
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Highly Efficient and Broadband Hybrid Photodetector Based on 2-D Layered Graphene/CTS Quantum DotsYadav, Sanjeev Mani / Pandey, Amritanshu et al. | 2019
- 3425
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Efficiency Enhancement in Thermally Activated Delayed Fluorescence Organic Light-Emitting Devices by Controlling the Doping Concentration in the Emissive LayerSoofi, H. / Jabbari, M. et al. | 2019
- 3433
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First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTsShankar, Bhawani / Soni, Ankit / Chandrasekar, Hareesh et al. | 2019
- 3441
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Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device ApplicationsWu, Chia-Hsun / Chen, Jian-You / Han, Ping-Cheng et al. | 2019
- 3447
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Device Design Consideration for Robust SiC VDMOSFET With Self-Aligned Channels Formed by Tilted ImplantationMorikawa, Takahiro / Ishigaki, Takashi / Shima, Akio et al. | 2019
- 3453
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Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTsHe, Jiabei / Wei, Jin / Yang, Song et al. | 2019
- 3459
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Copper–Cobalt Thermoelectric Generators: Power Improvement Through Optimized Thickness and Sandwiched Planar StructureSelvan, Krishna Veni / Rehman, Tariq / Saleh, Tanveer et al. | 2019
- 3466
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Communication at the Speed of Light (CaSoL): A New Paradigm for Designing Global WiresSarvari, Reza / Rassekh, Amin / Shahhosseini, Sina et al. | 2019
- 3473
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The Resistivity Size Effect in Epitaxial Nb(001) and Nb(011) LayersMilosevic, Erik / Kerdsongpanya, Sit / McGahay, Mary E. et al. | 2019
- 3479
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Solution-Processed DyOx for Aging Diffusion ZnSnO Transistors and Applications in Low-Voltage-Operating Logic CircuitsYang, Bing / He, Gang / Zhang, Yongchun et al. | 2019
- 3485
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Modeling of Thermal Conductivity for a CMOS-Compatible MEMS-ROIC Contact by TiN NanotubesMichel, Marvin / Vogt, Holger et al. | 2019
- 3492
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Plasma Charge Accumulative Model in Quantitative FinFET Plasma DamageTsai, Yi-Pei / Shih, Jiaw-Ren / King, Ya-Chin et al. | 2019
- 3498
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Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 KTriantopoulos, K. / Casse, M. / Barraud, S. et al. | 2019
- 3506
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Design and Investigation of a Novel Charge Plasma-Based Core-Shell Ring-TFET: Analog and Linearity AnalysisGupta, Ashok Kumar / Raman, Ashish / Kumar, Naveen et al. | 2019
- 3513
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Analytical Modeling and Simulation-Based Optimization of Broken Gate TFET Structure for Low Power ApplicationsDutta, Rounak / Sarkar, Subir Kumar et al. | 2019
- 3521
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A Compact Statistical Model for the Low-Frequency Noise in Halo-Implanted MOSFETs: Large RTN Induced by Halo ImplantsBanaszeski da Silva, Mauricio / Both, Thiago H. / Tuinhout, Hans P. et al. | 2019
- 3527
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Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric CapacitorsAlessandri, Cristobal / Pandey, Pratyush / Abusleme, Angel et al. | 2019
- 3535
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Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect TransistorsXu, Lin / Qiu, Chenguang / Zhao, Chenyi et al. | 2019
- 3541
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Experimental Extraction of Ballisticity in Germanium Nanowire nMOSFETsChung, Wonil / Wu, Heng / Wu, Wangran et al. | 2019
- 3549
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Efficient Temperature Sensor Based on SOI Gate-All-Around Electrostatically Formed Nanowire TransistorShimanovich, K. / Mutsafi, Z. / Shach-Caplan, M. et al. | 2019
- 3554
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Electrolyte-Gated Indium Oxide Thin Film Transistor Based Biosensor With Low Operation VoltageYang, Peng / Cai, Guangshuo / Wang, Xinzhong et al. | 2019
- 3560
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Ultrasensitive NH3 Gas Sensor Based on Au/ZnO/n-Si Heterojunction Schottky DiodePunetha, Deepak / Pandey, Saurabh Kumar et al. | 2019
- 3568
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Liquid Exfoliated NiO Nanosheets for Trace Level Detection of Acetone VaporsDey, Sayan / Santra, Sumita / Guha, Prasanta Kumar et al. | 2019
- 3573
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Design and Test of Broadband Rectangular Waveguide TE10 to Circular Waveguide TE21 and TE01 Mode ConvertersXu, Yong / Peng, Tinghui / Sun, Miao et al. | 2019
- 3580
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Simulation Investigations and Optimization of a Millimeter-Wave Gyrotron for Its Tunability Using Magnetic and Thermal Tuning SchemesSingh, Rajanish Kumar / Thottappan, M. et al. | 2019
- 3587
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Construction of Multipactor Susceptibility Diagrams From Map-Based TheorySiddiqi, Moiz / Kishek, Rami et al. | 2019
- 3592
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Preparation, Performance, and Work Function Model of Impregnated Tungstate CathodesHu, Mingwei / Wang, Xiaoxia / Qi, Shikai et al. | 2019
- 3599
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Beam Transport and Beam-Current Loss in Emittance-Dominated High-Frequency TubesZuboraj, Muhammed / Carlsten, Bruce E. et al. | 2019
- 3608
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Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP, and WS2-Based n-MOSFETs for Future Technology Nodes—Part I: Device-Level ComparisonAgarwal, Tarun Kumar / Rau, Martin / Radu, Iuliana et al. | 2019
- 3614
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Performance Comparison of s-Si, In0.53Ga0.47As, Monolayer BP- and WS2-Based n-MOSFETs for Future Technology Nodes—Part II: Circuit-Level ComparisonAgarwal, Tarun Kumar / Rau, Martin / Radu, Iuliana et al. | 2019
- 3620
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Spin-Hall-Effect-Based Stochastic Number Generator for Parallel Stochastic ComputingHu, Jiaxi / Li, Bingzhe / Ma, Cong et al. | 2019
- 3628
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Next-Generation 3D Printed Microfluidic Membraneless Enzymatic Biofuel Cell: Cost-Effective and Rapid ApproachRewatkar, Prakash / Goel, Sanket et al. | 2019
- 3636
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Enhanced Reliability of Ferroelectric HfZrOx on Semiconductor by Using Epitaxial SiGe as SubstrateChen, Kuen-Yi / Huang, Yan-Hua / Kao, Ruei-Wen et al. | 2019
- 3640
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A Physics-Based Threshold Voltage Model for Junction-Less Double Gate FETs Having Vertical Structural and Doping AsymmetryKumar, A. / Roy, J. N. et al. | 2019
- 3646
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An Analytical Drain Current Model for the Cylindrical Channel Gate-All-Around Heterojunction Tunnel FETsKeighobadi, Danial / Mohammadi, Saeed / Fathipour, Morteza et al. | 2019
- 3652
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Analytical Drain Current Model of Double-Gate Monolayer Transition Metal Dichalcogenide TFETZhang, Yefei / Li, Zunchao / Guan, Yunhe et al. | 2019
- 3659
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Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT $\langle$ p++-n-n−-n++ $\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz DomainChatterjee, Sulagna / Mukherjee, Moumita et al. | 2019
- 3668
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Modeling of Ballistic Monolayer Black Phosphorus MOSFETsPrentki, Raphael J. / Liu, Fei / Guo, Hong et al. | 2019
- 3675
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Design and AC Modeling of a Bipolar GNR-h-BN RTD With Enhanced Tunneling Properties and High Robustness to Edge DefectsKhoshbaten, Mahdi / Hosseini, Seyed Ebrahim et al. | 2019
- 3683
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A Novel Multiple-Frequency RF-MEMS Resonator Based on the Whispering Gallery ModesKan, Xiao / Chen, Zeji / Yuan, Quan et al. | 2019
- 3686
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An Euler–Lagrange Equation Oriented Solution for Write Energy Minimization of STT-MRAMChen, Bing / Gao, Shifan / Qu, Yiming et al. | 2019
- 3690
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The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off LossChen, Weizhen / Cheng, Junji / Huang, Haimeng et al. | 2019
- 3694
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Errata for “An Intermediate Frequency Amplifier for High-Temperature Applications”Hussain, Muhammad Waqar / Elahipanah, Hossein / Schroder, Stephan et al. | 2019
- 3695
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Call for Papers - T-ED special issue on Memory Devices and Technologies for the Next Decade| 2019
- 3697
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Ultra Wide Band Gap Semiconductors for Power Control and Conversion| 2019
- 3699
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Introducing IEEE Collabratec| 2019
- 3700
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Together, we are advancing technology| 2019
- C1
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Table of contents| 2019
- C2
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IEEE Transactions on Electron Devices publication information| 2019
- C3
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IEEE Transactions on Electron Devices information for authors| 2019