Journal of the Electrochemical Society
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 391
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Reactivity of Lithium Intercalated into Petroleum Coke with Carbonate ElectrolytesJean, M. et al. | 1996
- 391
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Reactivity of Lithium Intercalated into Petroleum Coke in Carbonate ElectrolytesJean, M. / Tranchant, A. / Messina, R. et al. | 1996
- 394
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Nanocrystalline TiO2 (Anatase) Electrodes: Surface Morphology, Adsorption, and Electrochemical PropertiesKavan, L. et al. | 1996
- 401
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Voltammetry and Conductivity of a Polyether-Pyridinium Room Temperature Molten Salt Electrolyte and of Its Polymer Electrolyte Solutions in PolydimethylsiloxanePyati, R. et al. | 1996
- 406
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Sodium-Phosphorus-Sulfur Cells. I. Cell PerformanceRidgway, P.L. et al. | 1996
- 412
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Sodium-Phosphorus-Sulfur Cells. II. Phase EquilibriaRidgway, P.L. et al. | 1996
- 418
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The Effect of Mechanical Processing Procedures on the Decomposition Rate of Silver Oxide Cathode MaterialTakeda, K. et al. | 1996
- 422
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The Reaction of Clean Li Surfaces with Small Molecules in Ultrahigh Vacuum. I. DioxygenWang, K. et al. | 1996
- 429
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Studies of Electrochemical Properties of Ti0.35Zr 0.65)NixV2 - x - yMny Alloys with C14 Laves Phase for Nickel-Metal Hydride BatteriesYang, H.W. et al. | 1996
- 435
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Application of Porous Electrode Theory on Metal Hydride Electrodes in Alkaline SolutionZheng, G. et al. | 1996
- 442
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Corrosion of Tin Oxide at Anodic PotentialsCachet, H. et al. | 1996
- 449
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The Detection and Analysis of Electrochemical Damage in Bismaleimide-Graphite Fiber CompositesTaylor, S.R. et al. | 1996
- 458
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Anodic Behavior of Copper in Iodide Solutions. Comparison with Chloride and Effect of Benzotriazole-Type InhibitorsTromans, D. et al. | 1996
- 466
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Kinetics of Particle Coarsening at Gold Electrode-Electrolyte Solution Interfaces Followed by In Situ Scanning Tunneling MicroscopyAndreasen, G. et al. | 1996
- 472
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Plasma Treatment Process for Palladium Chemisorption onto Polymers before Electroless DepositionCharbonnier, M. et al. | 1996
- 480
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Three-Dimensional Calculation of Current Distribution in Electrodeposition on Patterned Cathode with Auxiliary ElectrodeChoi, Y.-S. et al. | 1996
- 486
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Workpiece, Pattern, and Feature Scale Current DistributionsDeBecker, B. et al. | 1996
- 493
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Improved Selenization Procedure to Obtain CuInSe2 Thin Films from Sequentially Electrodeposited PrecursorsGuillén, C. et al. | 1996
- 498
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Effect of the Composition of Polypyrrole Substrate on the Electrodeposition of Copper and NickelHepel, M. et al. | 1996
- 505
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Mathematical Modeling of Electroless Nickel Deposition at Steady State Using Rotating Disk ElectrodeKim, Y.-S. et al. | 1996
- 510
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Kinetics and Mechanism of Electroless Deposition of CopperMishra, K.G. et al. | 1996
- 517
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Effects of Postdeposition Heat-Treatment on Morphology and Microstructure of CdTe Grown by ElectrodepositionKim, B.Qi D. et al. | 1996
- 517
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Effects of postdeposition heat-treatment on the morphology and microstructure of thin-film CdTe grown by electrodepositionBin Qi / Kim, Donghwan / Williamson, D.L. et al. | 1996
- 524
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Oxidation of n-InP and Indium in the Negative Potential Region at pH 5Quinlan, K.P. et al. | 1996
- 530
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Microstructure-Property Relations of Solid Oxide Fuel Cell Cathodes and Current Collectors. Cathodic Polarization and Ohmic ResistanceSasaki, K. et al. | 1996
- 544
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Effect of Mask Wall Angle on Shape Evolution during Through-Mask Electrochemical MicromachiningShenoy, R.V. et al. | 1996
- 550
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Electroreduction of C~6~0 in Aprotic Solvents. III. Voltammetric Study, at Microelectrode, of C^n^-~6~0 (n = 0 to 4) Solvation in the Absence of Supporting ElectrolyteSoucaze-Guillous, B. / Kutner, W. / Jones, M. T. et al. | 1996
- 550
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Electroreduction of C60 in Aprotic Solvents. III. Voltammetric Study, at Microelectrode, of C60n-(nSoucaze-Guillous, B. et al. | 1996
- 556
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The Anodic Behavior of Azide Ions at Carbon Electrodes in Neutral ElectrolyteDalmia, A. et al. | 1996
- 561
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Electrochemical Behavior of the Manganese-Substituted Nickel HydroxidesGuerlou-Demourgues, L. et al. | 1996
- 567
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Nonstoichiometry of Sintered Oxide Ca~0~.~9La~0~.~1MnO~3~.~ and Its Cathodic Properties in Alkaline SolutionsMorimoto, H. / Kamata, M. / Esaka, T. et al. | 1996
- 567
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Nonstoichiometry of Sintered Oxide Ca0.9La0.1MnO3 - d) and Its Cathodic Properties in Alkaline SolutionsMorimoto, H. et al. | 1996
- 570
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A Temperature Study of the Ionic Conductivity of a Hybrid Polymer ElectrolyteOlsen, I.I. et al. | 1996
- 574
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In Situ X-Ray Absorption Near-Edge Spectroscopic Study of the Cathodic Reduction of Artificial Iron Oxide Passive FilmsSchmuki, P. et al. | 1996
- 582
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Pulsed Electroreduction of CO2 on Silver ElectrodesShiratsuchi, R. et al. | 1996
- 587
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Characterization of Polymer Electrolyte Fuel Cells Using AC Impedance SpectroscopySpringer, T.E. et al. | 1996
- 600
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Modeling Lithium Intercalation of Single-Fiber Carbon MicroelectrodesVerbrugge, M.W. et al. | 1996
- 609
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Construction and Working Mechanism of Sulfur Dioxide Sensor Utilizing Stabilized Zirconia and Metal SulfateYan, Y. et al. | 1996
- 614
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An X-Ray Absorption Near-Edge Spectroscopic Study of the Structure of Passive Films on Amorphous Al-Fe-Ce AlloysMansour, A.N. et al. | 1996
- 619
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Kinetics and Modeling of Wet Etching of Aluminum Oxide by Warm Phosphoric AcidZhou, B. et al. | 1996
- 624
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Growth and Resistivity Behavior of Copper Film by Chemical Vapor DepositionChoi, E.S. et al. | 1996
- 628
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Repair of Plasma Etch Related Gate Perimeter Damage Using Low Temperature OxidationGuldi, R.L. et al. | 1996
- 634
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On the Mechanism of Boron Incorporation during Silicon Epitaxy by Means of Chemical Vapor DepositionKühne, H. et al. | 1996
- 639
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Nano-Trenched Local Oxidation of Silicon Isolation Using Island Polysilicon GrainsKwon, S.-K. et al. | 1996
- 643
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Wettability of Polished Silicon Oxide SurfacesThomas, R.R. et al. | 1996
- 649
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Silicon Nucleation and Film Evolution on Silicon Dioxide Using Disilane. Rapid Thermal Chemical Vapor Deposition of Very Smooth Silicon at High Deposition RatesViolette, K.E. et al. | 1996
- 657
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Self-Developing Characteristics of Si Containing Polymers and Their Application to X-Ray LithographyYamaguchi, A. et al. | 1996
- 666
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Microcrystal Growth on Borophosphosilicate Glass Film during High-Temperature AnnealingYoshimaru, M. et al. | 1996
- 672
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Etching Profiles and Neutral Shadowing in Long TrenchesAbraham-Shrauner, B. et al. | 1996
- 677
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Effect of Transport Phenomena on Boron Concentration Profiles in Silicon Epitaxial WafersHabuka, H. et al. | 1996
- 683
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Deposition of Tin Oxide into Porous Silicon by Atomic Layer EpitaxyDüscô, C. et al. | 1996
- 687
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Phase Transformation and Lattice Strain of Alpha-AgI Stabilized in Superionic GlassSaito, T. et al. | 1996
- 691
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Selective Electroless Nickel Deposition on Patterned Phosphonate and Carboxylate Polymer FilmsShilling, M.L. et al. | 1996
- 695
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Confinement Phenomena in Buried Oxides of SIMOX Structures as Affected by ProcessingAfanas'ev, V.V. et al. | 1996
- 701
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Plasma Assisted Dry Etching of Cobalt Silicide for Microelectronics ApplicationsFracassi, F. et al. | 1996
- 707
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Characteristics of SiOF Films Formed Using Tetraethylorthosilicate and Fluorotriethoxysilane at Room Temperature by Chemical Vapor DepositionHomma, T. et al. | 1996
- 712
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Control of Surface Concentration of Boron or Phosphorus Employing Ion Shower DopingKasamatsu, A. et al. | 1996
- 716
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Modeling of the Wear Mechanism during Chemical-Mechanical PolishingLiu, C.-W. et al. | 1996
- 722
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Asymmetric Distribution of Oxygen Concentration in the Si Melt of a Czochralski SystemYi, K.-W. et al. | 1996
- 725
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Microstructural Properties of Helium Implanted Void Layers in Silicon as Related to Front-Side GetteringMedernach, J.W. et al. | 1996
- 736
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Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Tetrakis (diethylamido) Titanium and AmmoniaMusher, J.N. et al. | 1996
- 744
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A 0.25 mm MOSFET Technology Using In Situ Rapid Thermal Gate DielectricsZhang, K.X. et al. | 1996
- 744
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A 0.25 mu m MOSFET technology using in situ rapid thermal gate dielectricsZhang, K.X. / Osburn, C.M. / Hames, G. et al. | 1996
- 744
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A 0.25 m MOSFET Technology Using In Situ Rapid Thermal Gate DielectricsZhang, K. X. / Osburn, C. M. / Hames, G. et al. | 1996
- 749
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Dissolution Windows for Wet Chemical Processing of Silicon and Silicon Dioxide: Potential-pH Diagrams for the Si-F-H2O SystemOsseo-Asare, K. et al. | 1996
- 752
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Comparison of Dry Etching Techniques for III-V Semiconductors in CH4-H2-Ar PlasmasPearton, S.J. et al. | 1996
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In Situ FTIR-Diffuse Reflection Spectroscopy of the Anode Surface in a Direct Methanol-Oxygen Fuel CellFan, Q. et al. | 1996
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Promoting Effect of Sodium Dodecyl Sulfate on the Redox Reaction of HemoglobinLi, G.-X. et al. | 1996
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Effects of the Organic Solvent on the Electrochemical Lithium Intercalation Behavior of Graphite ElectrodeMorita, M. et al. | 1996
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A New Type of a Rocking-Chair Battery Family Based on a Graphite Anode and a Polymer CathodePanero, S. et al. | 1996
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The Role of Microcracking in ZrCrNi Hydride ElectrodesMcCormack, M. et al. | 1996
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Mixed Potential Type NOx Sensor Based on Stabilized Zirconia and Oxide ElectrodeMiura, N. et al. | 1996
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Selective CO Detection by Using Indium Oxide-Based Semiconductor Gas SensorYamaura, H. et al. | 1996
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Control of Selective Tungsten Chemical Vapor Deposition by Monolayer Nitridation of Silicon SurfaceTakami, S. et al. | 1996
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Bevel Etching of Tin-Doped Indium OxideMeerakker, J.E.A.M.van den et al. | 1996
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Fabrication of a Porous Silicon Diode Possessing Distinct Red and Orange Electroluminescent RegionsZhang, L. et al. | 1996
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A Novel Electrochemical Method for Measuring Salt Diffusion Coefficients and Ion Transference NumbersXu, J. et al. | 1996