Microelectronic engineering
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 3
-
USLI CMOS - The Next Ten YearsChatterjee, P. et al. | 1992
- 9
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Recent Development in InP-based Optoelectronic DevicesSuematsu, Y. et al. | 1992
- 13
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Isolation Design Comparisons for 0.5 m CMOS Technology using SILO ProcessGuegan, G. / Deleonibus, S. / Lerme, M. et al. | 1992
- 17
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Investigations of the Resistivity of TiSi/p+ Contacts and their Optimisation in a 0.5 m CMOS TechnologyNeumueller, W. / Hoehnel, F. et al. | 1992
- 21
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Device Characterisation of a High-performance 0.25 m CMOS TechnologyWoerlee, P. H. / Juffermans, C. A. H. / Lifka, H. et al. | 1992
- 25
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Shallow P^+-Junction Technology for 0.25 m CMOSPomp, H. / Woerlee, P. H. / Walker, A. J. et al. | 1992
- 31
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Simulation of Compound Semiconductor DevicesSchoenmaker, W. / Vankemmel, R. et al. | 1992
- 39
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Numerical Analysis of InP-JFET by use of a Quasi 2D-ModelBrockerhoff, W. / Ellrodt, P. / Gueldner, W. et al. | 1992
- 43
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Two-dimensional Noise Calculations of Sub-micrometer MESFETsAbou-Elnour, A. / Schuenemann, K. et al. | 1992
- 49
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Fast and Sensitive Two-terminal Double-heterojunction Optical ThyristorsHeremans, P. L. / Kuijk, M. / Vounckx, R. et al. | 1992
- 53
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Experiments on Optoelectronic Bistability in Distributed AIAs/GaAs-Bragg ReflectorsKnigge, S. / Zumkley, S. / Wingen, G. et al. | 1992
- 57
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Surface Emitting Semiconductor Laserdiodes Based on Surface Mode EmissionKoeck, A. K. / Seeberg, A. / Rosenberger, M. et al. | 1992
- 61
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First Demonstration of Sub-nanosecond Photon Timing with a Germanium PhotodiodeLacaita, A. / Cova, S. / Zappa, F. et al. | 1992
- 67
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Total Quality Management (TQM) in Research and DevelopmentBeasley, K. et al. | 1992
- 75
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A GIGABIT Scalable SILO Field Isolation using Rapid Thermal Nitridation (RTN) of SiliconDeleonibus, S. et al. | 1992
- 79
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New Transient Characterization of Latchup Phenomenon in CMOS CellRoche, F. M. / Bocus, S. D. / Girard, P. et al. | 1992
- 83
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A Silicon Vertical JFET Compatible with Standard 0.7 m CMOS TechnologyGranier, A. / Mouis, M. / Degors, N. et al. | 1992
- 89
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Physics and Modeling of Polycrystalline Silicon Thin-Film TransistorsMigliorato, P. et al. | 1992
- 97
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Comparative Study of Low Temperature Polycrystalline Silicon Thin-Film Transistors Obtained by Various Crystallization Techniques for use in Active Matrix LCDsPattyn, H. / Poortmans, J. / Debenest, P. et al. | 1992
- 101
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Laser Crystallised Polycrystalline Silicon Thin-Film TransistorsBrotherton, S. D. / McCulloch, D. J. / Gowers, J. P. et al. | 1992
- 105
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Gate Bias Instability in Polycrystalline Silicon Thin-Film Transistors Formed using Various Gate DielectricsYoung, N. D. / Gill, A. et al. | 1992
- 109
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Hot Carriers Effects in Polycrystalline Silicon Thin-Film TransistorsMariucci, L. / Pecora, A. / Fortunato, G. et al. | 1992
- 115
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Compound Semiconductor Devices for Operation at Elevated TemperaturesHartnagel, H. L. et al. | 1992
- 123
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Modeling of Gain-guided Vertical-cavity Laser DiodesMichalzik, R. / Ebeling, K. J. et al. | 1992
- 127
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Tunneling and Ionization Phenomena in GaAs Pin DiodesLiebig, D. / Lugli, P. / Vogl, P. et al. | 1992
- 131
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The Permeable Junction Base Transistor with a New Gate of Extremely High Doped p^+^+GaAsGraeber, J. / Kamp, M. / Moersch, G. et al. | 1992
- 135
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Impact Ionization Phenomena in AlGaAs/GaAs HBTsDi Carlo, A. / Lugli, P. / Pavan, P. et al. | 1992
- 141
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Smart Power DevicesTihanyi, J. et al. | 1992
- 145
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Light Triggered Thyristor with a MOS Amplifying Gate: An Example of Functionally Integrated Vertical High Voltage Power DeviceSanchez, J.-L. / Berriane, R. / Rossel, F. et al. | 1992
- 149
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A Self-isolated and Efficient Power Device for HVIC's: RESURF LDMOS with SIPOS LayersCharitat, G. / Bouanane, M. A. / Rossel, P. et al. | 1992
- 153
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A Smart Power Process in "Direct-Bonded" Silicon on Insulator with 150 V VDMOS, CMOS and Bipolar TransistorsIfstroem, T. / Appel, U. / Graf, H.-G. et al. | 1992
- 157
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A Novel Technique for the Production of Thin DevicesWilson, R. / Gamble, H. S. / Hudson, A. S. et al. | 1992
- 161
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Floating Well Based Design Methodology Aimed to Improve Latch-up Immunity in a Smart Power TechnologyPuig Vidal, M. / Bafleur, M. / Buxo, J. et al. | 1992
- 165
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A Fully Integrated Silicon-based 40-V Thermal Ink Jet ICHawkins, W. G. / Burke, C. J. / Watrobski, T. E. et al. | 1992
- 171
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Amorphous Silicon Thin-Film Transistors and their ApplicationsMorin, F. et al. | 1992
- 179
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Current DLTS Measurements on Polycrystalline Silicon Thin Film TransistorsAyres, J. R. et al. | 1992
- 183
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Analysis of Short Channel Effects in Polycrystalline Silicon Thin Film Transistors: A New MethodReita, C. / Migliorato, P. / Pecora, A. et al. | 1992
- 187
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Thin Film Cadmium Selenide Technology in Large Area Active Matrix High Resolution DisplaysFarrell, J. / Westcott, M. / Van Calster, A. et al. | 1992
- 189
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Megarad- a New Alpha Radiation Detection System for Environmental SurveysStreil, T. / Erlebach, A. / Huebler, P. et al. | 1992
- 191
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CMOS Compatible Micromachining by Dry Silicon-etching TechniquesAdams, S. / Hilleringmann, U. / Goser, K. et al. | 1992
- 195
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Micromechanically Structurized Sensors on GaAs: An Integrated AnemometerFricke, K. / Hartnagel, H. L. / Ritter, S. et al. | 1992
- 199
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Surface Micromachined Scanning MirrorsMattsson, K. E. et al. | 1992
- 202
-
Low Temperature Growth of GaAs-on-SiBriones, F. et al. | 1992
- 205
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High Performance Hybrid Optoelectronic Terminal Components for Optical InterconnectMoseley, A. J. / Goodwin, M. J. / Goodfellow, R. C. et al. | 1992
- 207
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Heteroepitaxial or Epitaxial Lift-off Approach for Future Optoelectronic GaAs MESFET/InP Optical Switch Integration?Pollentier, I. / Buydens, L. / Van Daele, P. et al. | 1992
- 211
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Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on SiliconHilleringmann, U. / Goser, K. et al. | 1992
- 215
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6 x 700 Mbit/s Array Transmitter/Receiver Pair Realised in Opto-hybrid Silicon Motherboard TechnologyParker, J. W. / Harrison, P. M. / Ayliffe, P. J. et al. | 1992
- 219
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10 Gbit/s Operation of Integrated BRS Laser-MISFET on Indium PhosphidePost, G. / Kazmierski, C. / Delorme, F. et al. | 1992
- 223
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Resonant Wavelength Selective Photo-detectorsWipiejewski, T. / Panzlaff, K. / Ebeling, K. et al. | 1992
- 229
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Impact of New Chip Technologies on Consumer ProductsClaassen, T. A. C. M. et al. | 1992
- 235
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Impact of New Chip Technologies on TelecommunicationsRabaey, D. et al. | 1992
- 245
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Ferro-electrics for Non-volatile MemoriesCuppens, R. / Larsen, P. K. / Pierings, G. A. C. M. et al. | 1992
- 253
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A Novel Isolation Scheme for Implementation in Very High Density AMG EPROM and FLASH EEPROM ArraysWolstenholme, G. R. / Bergemont, A. et al. | 1992
- 257
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An Analytical Model for the Optimization of High Injection MOS Flash E^2PROM DevicesVan Houdt, J. / Groeseneken, G. / Maes, H. E. et al. | 1992
- 261
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Simulation of EPROM Device Programming using the Hydrodynamic ModelKeeney, S. / Mathewson, A. / Ravazzi, L. et al. | 1992
- 265
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Carrier Temperature Dependent Gate Current Modeling for EEPROM SimulationRollins, J. G. / Axelrad, V. / Motzny, S. J. et al. | 1992
- 269
-
Reliability Properties of Rapid Thermal Processed Nitrided Oxides after Fowler-Nordheim Electrical StressPapadas, C. / Ghibaudo, G. / Pananakakis, G. et al. | 1992
- 275
-
Monte Carlo Simulation of Charge Transport in Semiconductor DevicesLugli, P. et al. | 1992
- 283
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Ensemble Monte Carlo Simulation of a Pulse-doped GaAs MESFET with a Doped-layer of 100AYamada, Y. / Tomita, T. et al. | 1992
- 287
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Quantum Analysis of Zener-assisted Impact Ionization for Transient Regimes and Strong Electric FieldsQuade, W. / Rossi, F. / Jacoboni, C. et al. | 1992
- 291
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Hydrodynamic Simulation of an n-MOSFET at 77 KLeone, A. / Gnudi, A. / Baccarani, G. et al. | 1992
- 295
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Hydrodynamic Simulation of Hysteresis Phenomena in SOI MOSFET CharacteristicsBork, I. / Meinerzhagen, B. / Engl, W. L. et al. | 1992
- 299
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Non-local Avalanche Calculation for Deep Sub-micron Silicon DevicesStreutker, G. / Slotboom, J. W. et al. | 1992
- 305
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Current Status of Heterojunction Bipolar and High-electron Mobility Transistor TechnologiesPavlidis, D. et al. | 1992
- 313
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Experimental and Theoretical Investigation of Parameter Evolution of Ultra-short Gate Standard and Pseudomorphic HEMTsDe Lustrac, A. / Crozat, P. / Dollfus, P. et al. | 1992
- 317
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Metamorphic In~0~.~2~7Ga~0~.~7~3As/In~0.~2~5Al~0~.~7~5As HEMT on GaAs: MBE Growth and Device PerformanceWin, P. / Cordier, Y. / Druelle, Y. et al. | 1992
- 321
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Fabrication of 0.1-m Planar-doped Pseudomorphic HEMT's using a PECVD Silicon Nitride Assisted ProcessZou, G. / De Raedt, W. / Van Hove, M. et al. | 1992
- 325
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Fabrication of Striped Channel Pseudomorphic HEMTsBollaert, S. / Legry, P. / Win, P. et al. | 1992
- 329
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Pseudomorphic Ga~xIn~1~-~xAs on InP for HEMT Structures Grown by MBEKuenzel, H. / Bach, H. G. / Boettcher, J. et al. | 1992
- 335
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SiC Growth and its Application to High-speed Silicon HBT'sSugii, T. / Yamazaki, T. / Arimoto, Y. et al. | 1992
- 343
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Polysilicon Emitter with a Nitrided InterfaceSavage, S. M. et al. | 1992
- 347
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Ultrashallow Emitter-base Profiles by Double DiffusionBiebl, M. / Bianco, M. / Ehinger, K. et al. | 1992
- 351
-
SiCGe Ternary Alloys - Extending Silicon-based HeterostructuresIyer, S. S. / Eberl, K. / Powell, A. R. et al. | 1992
- 357
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Avoiding Dislocations in Ion-implanted SiliconSaris, F. W. / Custer, J. S. / Schreutelkamp, R. J. et al. | 1992
- 363
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Electrical Behaviour of Junctions Obtained by Rapid Thermal Annealing of BF~2 Implanted LayersPolignano, M. L. / Losavio, A. et al. | 1992
- 367
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Anomalous Electrical Deactivation of Low Concentration Rapid Thermally Annealed Arsenic Implanted SiliconAltrip, J. L. / Evans, A. G. R. et al. | 1992
- 371
-
Process Integration for Barrier Layers and Al-Alloys Using a Sputtering Cluster ToolWendt, H. / Willer, J. / Emmer, D. et al. | 1992
- 375
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Properties of LPCVD TiN Barrier LayersHillman, J. T. / Studiner, D. W. / Rice, M. J. et al. | 1992
- 379
-
In-process Control of Co Silicide Formation by RTADilhac, J.-M. / Ganibal, C. / Nolhier, N. et al. | 1992
- 383
-
Measurement of Wafer Temperature by InterferenceBollmann, D. / Haberger, K. et al. | 1992
- 389
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Advanced III-V HEMT Technology for Microwave and Millimetere-wave ApplicationsLong, A. P. / Eddison, I. G. et al. | 1992
- 397
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Very non Linear Transconductance of Highly Delta-Doped Multichannel HEMT'sTheron, D. / Coupez, T. / Bonte, B. et al. | 1992
- 401
-
Analysis of Gate Leakage on MOVPE Grown InAlAs/InGaAs-HFETBuchali, F. / Heedt, C. / Prost, W. et al. | 1992
- 405
-
Hot-electron Induced Degradation in AlGaAs/GaAs HEMTsTedesco, C. / Canali, C. / Magistrali, F. et al. | 1992
- 409
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Normally-off GaAs BMFET with Heterojunction EmitterSchweeger, G. / Hartnagel, H. L. et al. | 1992
- 413
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A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-implantationPrasad, S. J. / Vetanen, B. / Haynes, C. et al. | 1992
- 417
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Linear and Nonlinear Analysis of Submicron n^+ nn^+ Diodes for Microwave GeneratorsGruzhinskis, V. / Starikov, E. / Shiktorov, P. et al. | 1992
- 421
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Coplanar Microwave Phase Shifter for InP-based MMICsDragoman, M. / Block, M. / Kremer, R. et al. | 1992
- 427
-
Heterojunction Bipolar Transistors with Si~1~-~xGe~x BasePruijmboom, A. / Timmering, C. E. / Van Rooij-Mulder, J. M. L. et al. | 1992
- 435
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The Influence of MBE-layer Design on the High Frequency Performance of Si/SiGe HBTsGruhle, A. / Kibbel, H. / Kasper, E. et al. | 1992
- 439
-
Band Offsets in Heaviliy Doped p Type GeSi/Si(100) Strained Layers: Applications to Design of Long Wave length Infrared (LWIR) detectorsJain, S. C. / Poortmans, J. / Nijs, J. et al. | 1992
- 443
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Evidence of the Influence of Heavy-doping Induced Bandgap Narrowing on the Collector Current of Strained SiGe-base Heterojunction Bipolar TransistorsPoortmans, J. / Jain, S. C. / Caymax, M. et al. | 1992
- 447
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Characterisation of Heterojunction Bipolar Transistors Incorporating Si/Si~1~-~xGe~x Epitaxial Double Layers with n+ Emitter ImplantsRobbins, D. J. / Leong, W. Y. / Glasper, J. L. et al. | 1992
- 453
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Dynamic Effects in Hot-carrier Degradation Relevant for CMOS OperationWeber, W. / Brox, M. et al. | 1992
- 461
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Aging Study of Optimized Submicron n-MOSFET's (DC, AC, and Alternating Stress Conditions): Correlation between Charge Pumping and Classical ParametersRevil, N. / Cristoloveanu, S. / Mortini, P. et al. | 1992
- 465
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On the Different Time Dependence of Interface Trap Generation and Charge Trapping During Hot Carrier Degradation in CMOSBellens, R. / Groeseneken, G. / Heremans, P. et al. | 1992
- 469
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A Simple Charge-pumping Method to Measure the Logarithmic-time Dependence of Trapped Oxide Charge in P-MOSFET'sBravaix, A. / Vuillaume, D. et al. | 1992
- 473
-
Hot Carrier-induced Degradation Mechanisms in Short-channel SIMOX P-MOSFET'sOuisse, T. / Auberton-Herve, A. J. / Giffard, B. et al. | 1992
- 477
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Hole Trapping and Hot-hole Induced Interface Trap Generation in MOSFET's at Different TemperaturesVan den Bosch, G. / Groeseneken, G. / Heremans, P. et al. | 1992
- 481
-
Dumping of Electron Heating Effects in Thermal Oxides on Ge-doped SiliconAfanas'ev, V. V. / Akulov, A. P. / Gorid, E. M. et al. | 1992
- 487
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The Role of Electrically Active and Inactive Donators in the Oxidation Rate Enhancement of SiliconLinke, P. H. / Mueller, B. / Berger, H. H. et al. | 1992
- 491
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Pseudo-analytical Modelling of Stress Dependent Silicon OxidationCollard, D. / Baccus, B. / Senez, V. et al. | 1992
- 493
-
The Segregation of Main Dopant Species at the SiO2-Si Interface Calculated by First Order ThermodynamicsHaberger, K. / Neumayer, G. / Buchner, R. et al. | 1992
- 495
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Simulation of High Energy Implantation Profiles in Crystalline SiliconGong, L. / Bogen, S. / Frey, L. et al. | 1992
- 499
-
Aluminum Thinning onto Blanket and Etched Back Tungsten Plugs: Simulation of Geometrical EffectsMarangon, M. S. / De Santi, G. / Marmiroli, A. et al. | 1992
- 503
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A Dual Sticking-coefficient Chemical Vapor Deposition ModelWille, H. / Burte, E. P. et al. | 1992
- 507
-
Process Technology Optimization using an Integrated Process and Device Simulation Sequencing SystemCartuyvels, R. / Booth, R. / Dupas, L. et al. | 1992
- 511
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Process Analysis using RSM and SimulationCecchetti, M. / Lissoni, M. / Lombardi, C. et al. | 1992
- 517
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The Future for Multichip ModulesSage, M. et al. | 1992
- 519
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SiGe Heterojunctions: Devices and ApplicationsArienzo, M. / Comfort, J. H. / Crabbe, E. F. et al. | 1992
- 531
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Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization TechniqueBurghartz, J. N. / Warnock, J. / Cressler, J. D. et al. | 1992
- 535
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Near-future Perspectives for Si and Si~1~-~yGe~y Bipolar TransistorsMarksteiner, S. / Felder, A. / Meister, T. F. et al. | 1992
- 539
-
High-speed, High-quality WEB NPN Transistors with Phosphorous EmittersNanver, L. K. / Goudena, E. J. G. / Van Zeijl, H. W. et al. | 1992
- 543
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Improvement of Device Characteristics by Multiple Step Implants or Introducing a C Gettering LayerWijburg, R. C. M. / Liefting, J. R. / Custer, J. S. et al. | 1992
- 547
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Performance of a CMOS Compatible Polysilicon Bipolar Transistor with High Energy Ion Implanted CollectorMarty, A. / Degors, N. / Kirtsch, J. et al. | 1992
- 551
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A 0.8 m BiCMOS Technology for Mixed Analog-digital Applications with Complementary Bipolar TransistorsArndt, J. / Conze, P. et al. | 1992
- 555
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A Modular BiCMOS Technology Including 85V DMOS Devices for Analogue/Digital ASIC ApplicationsWitters, J. S. et al. | 1992
- 561
-
Limitations of Electrical Interconnections in Electronic SystemsNoll, T. G. et al. | 1992
- 563
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Interconnect Technologies for Multi-chip Modules: High Frequency Characterization and Loss AnalysisPeeters, J. / Beyne, E. / Braendli, G. et al. | 1992
- 567
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Short Links Modelling in Multi-level PackageHassaine, N. / Mezui-Mintsa, R. / Boudiaf, A. et al. | 1992
- 571
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Thermodynamic analysis of Copper CVD using CuCl as PrecursorMadar, R. / Bernard, C. / Palleau, J. et al. | 1992
- 575
-
Ta/Polyimide Adhesion DurabilityCallegari, A. / Furman, B. / Graham, T. et al. | 1992
- 579
-
The Influence of Current Stress on the Ageing of Au-Al1%Si (1%Cu) Ball-bond Contacts Studied by SEM and EDXD'Olieslaeger, M. / De Schepper, L. / De Ceuninck, W. et al. | 1992
- 585
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Measurement of Two-dimensional Doping ProfilesSubrahmanyan, R. et al. | 1992
- 593
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Lateral Spread of High Energy P and B Ions Implanted in Silicon along the [100] Axis and in Random DirectionPrivitera, V. / Raineri, V. / Rimini, E. et al. | 1992
- 597
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Charge Trapping in Wafer Bonded MOS StructuresJauhiainen, A. / Bengtsson, S. / Engstroem, O. et al. | 1992
- 601
-
Temperature and Field Effects on the Conduction Mechanisms in Semi-insulating Polycrystalline SiliconLombardo, S. / Campisano, S. U. / Baroetto, F. et al. | 1992
- 605
-
Random Telegraph Signal Noise: A Probe for Hot-carrier Degradation Effects in Submicrometer MOSFET's?Simoen, E. / Dierickx, B. / Claeys, C. et al. | 1992
- 609
-
Characterization of the Ionizing Radiation Sensitivity of a CCD TechnologySimone, A. / Debusschere, I. / Alaerts, A. et al. | 1992
- 615
-
Technology and Applications of High-density SensorsKoshla, R. P. et al. | 1992
- 619
-
A 2 Million Pixel FIT CCD Image Sensor for HDTV Camera SystemYamagishi, M. / Oda, T. / Harada, K. et al. | 1992
- 623
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A CCD Delay Line to Determine Low Concentrations of Bulk Traps in SiliconToren, W. J. / Bisschop, J. et al. | 1992
- 627
-
A Defect-limited Noise Model for a Charge-coupled Device PixelMcGrath, R. D. / Clark, S. F. / Duane, P. K. et al. | 1992
- 631
-
Pixel Structure with Logarithmic Response for Intelligent and Flexible Imager ArchitecturesRicquier, N. / Dierickx, B. et al. | 1992
- 635
-
A 3X3 Infrared Matrix Sensor Using PVDF on SiliconHammes, P. C. A. / Regtien, P. P. L. et al. | 1992
- 639
-
Smart Imager for Fast and Inexpensive Mass-spectrometer Back-endsDierickx, B. / Geeraert, D. / Nevejans, D. et al. | 1992
- 643
-
Novel Contribution in Branch of Ultra-fast Condensed Matter Spectroscopic Photon Counting SystemProchazka, I. / Hamal, K. / Sopko, B. et al. | 1992
- 649
-
Shallow Junctions, Silicide Requirements and Process Technology for sub 0.5 m CMOSDavari, B. et al. | 1992
- 657
-
Electrical Properties of Thin SiO~2 Films Nitrided in N~2 O by Rapid Thermal ProcessingSeveri, M. / Mattei, G. / Dori, L. et al. | 1992
- 661
-
Implementation of a TiN Cap Layer into Conventional Self-aligned RTP Titanium Disilicide MOS ProcessKaplan, W. / Zhang, S.-L. / Norstroem, H. et al. | 1992
- 665
-
Thermal Stability of CoSi~2 on Submicron Polycrystalline Silicon LinesSchreutelkamp, R. J. / Deweerdt, B. / Verbeeck, R. et al. | 1992
- 669
-
Comparison of Self-aligned Silicide Technologies for Shallow CoSi~2 -Contacts in VLSI DevicesSchaeffer, C. / Depta, D. / Niewoehner, L. et al. | 1992
- 673
-
Shallow Junction Formation using MoSi~2 as Diffusion SourceAngelucci, R. / Impronta, M. / Pizocchero, G. et al. | 1992
- 679
-
On-wafer High-frequency Device CharacterizationKoolen, M. C. A. M. et al. | 1992
- 687
-
Transient Two-dimensional Numerical Analysis of the Charge-pumping ExperimentHabas, P. / Heinreichsberger, O. / Selberherr, S. et al. | 1992
- 691
-
Accurate Determination of Bandgap Narrowing in Heavily-doped Epitaxial P-type SiliconGhannam, M. Y. / Mertens, R. P. et al. | 1992
- 695
-
Emitter-base Breakdown: Measurement and SimulationBergner, W. / Packan, P. / Seidl, B. et al. | 1992
- 699
-
Explanation of Current Crowding Phenomena Induced by Impact Ionization in Advanced Si Bipolar Transistors by Means of Electrical Measurements and Light Emission MicroscopyPavan, P. / Vendrame, L. / Bigliardi, S. et al. | 1992
- 703
-
Measuring the Drain Voltage Dependent Series Resistance in Submicron LDD MOSFETsOtten, J. A. M. / Klaassen, F. M. et al. | 1992
- 707
-
Small Geometry Effects on the Maximum Cutoff Frequency of Bipolar TransistorsDecoutere, S. / Deferm, L. et al. | 1992
- 711
-
Low-frequency Noise in BJTs And HBTs: Influence of Internal Series ResistancesKleinpenning, T. G. M. / Holden, A. J. et al. | 1992
- 717
-
A Silicon Technology for Active High Frequency CircuitsStrohm, K. M. / Buechler, J. / Luy, J.-F. et al. | 1992
- 721
-
Polyoxide Edge Tunnelling Current Reduction by Top Corner RoundingHaspeslagh, L. / Vanhorebeek, G. / Deferm, L. et al. | 1992
- 725
-
Thin High-dielectric TiO~2 Films Prepared by Low Pressure MOCVDRausch, N. / Burte, E. P. et al. | 1992
- 729
-
Laser Direct Writing of Aluminum Multilevel Interconnects for VLSI ApplicationsTreiger, L. M. / Popov, A. A. et al. | 1992
- 733
-
Integration of Vertical/Quasivertical, DMOS, CMOS and Bipolar Transistors in a 50V SIMOX ProcessWeyers, J. / Vogt, H. / Berger, M. et al. | 1992
- 737
-
Fabrication of Submicron Microwave Bipolar Transistors by Direct Write Electron Beam LithographyWebster, M. N. / Verbruggen, A. H. / Romijn, J. et al. | 1992
- 743
-
A Systematic Investigation of N-Channel Delta-doped MOSFETs Grown by M.B.E.O'Neill, A. G. / Wood, A. C. G. / Phillips, P. et al. | 1992
- 747
-
Photon Emission from Sub-micron p-Channel MOSFETs Biased at High FieldsSelmi, L. / Lanzoni, M. / Bigliardi, S. et al. | 1992
- 751
-
Effect of Electron Heating on RTS in Deep Submicron n-MOSFET'sShi, Z. M. / Mieville, J.-P. / Dutoit, M. et al. | 1992
- 755
-
Identification and Characterization of the 1/f Low-frequency Noise in GaAs MESFETs Grown on InP SubstratesChertouk, M. / Chovet, A. / Clei, A. et al. | 1992
- 759
-
White Noise Study of JFET's on a New Mixed Rad-hard TechnologyDelevoye, E. / Chovet, A. et al. | 1992
- 763
-
Microwave Characterization of High T~c Superconducting YBaCuO Thin Films and Preliminary Device RealizationCarru, J. C. / Mehri, F. / Chauvel, D. et al. | 1992
- 769
-
Accurate Modeling of Electro-thermal Effects in Silicon DevicesPierantoni, A. / Ciampolini, P. / Baccarani, G. et al. | 1992
- 773
-
Analysis of Transient Behaviour of Floating Gate EEPROMsConcannon, A. / Keeney, S. / Mathewson, A. et al. | 1992
- 777
-
Accurate Analysis of Emitter Ballasting in HBT Power TransistorsMezui-Mintsa, R. / Hassaine, N. / Riet, M. et al. | 1992
- 781
-
Influence of Short Channel Effects on Microwave Performances of AlGaAs/InGaAs HEMTs Using Monte Carlo SimulationDollfus, P. / Bru, C. / Galdin, S. et al. | 1992
- 785
-
Correlation between Mobility Degradation and Threshold Voltage Behavior of Subhalf-micron MOSFETsWildau, H.-J. / Bernt, H. / Friedrich, D. et al. | 1992
- 789
-
The Efficient Simulation of Point-defect Diffusion by an Adaptive Multigrid MethodPantic, D. / Mijalkovic, S. / Stojadinovic, N. et al. | 1992
- 795
-
Trends in Silicon-on-Insulator TechnologyColinge, J.-P. et al. | 1992
- 803
-
Physics and Performances of Accumulation-mode SOI p-MOSFET's from Low (77K) to High (150-320C) TemperaturesFlandre, D. / Terao, A. / Loo, T. et al. | 1992
- 807
-
Investigation of the Influence of the Film Thickness in Accumulation-mode Fully-depleted SIMOX MOSFET'sFaynot, O. / Auberton-Herve, A.-J. / Cristoloveanu, S. et al. | 1992
- 811
-
Analysis of the Latch Phenomenon in Thin Film SOI MOSFET's as a Function of TemperatureBalestra, F. et al. | 1992
- 815
-
Characteristics of nMOS/GAA (Gate-All-Around) Transistors near ThresholdFrancis, P. / Terao, A. / Flandre, D. et al. | 1992
- 819
-
Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI DeviceHeinreichsberger, O. / Habas, P. / Selberherr, S. et al. | 1992
- 823
-
Correlation between Spectroscopic Reflectrometry and Electrical Measurements of SIMOX SOI Film ThicknessSmeys, P. / Magnusson, U. / Colinge, J. P. et al. | 1992
- 827
-
SOI Material Properties Determined by Electrical CharacterizationRai-Choudhury, P. / Hillard, R. J. / Heddleson, J. M. et al. | 1992
- 833
-
A Survey of MOS Device Physics for low Temperature ElectronicsGhibaudo, G. / Balestra, F. / Emrani, A. et al. | 1992
- 841
-
SiGe-Base Bipolar Transistors for Cryogenic BiCMOS ApplicationsCressler, J. D. et al. | 1992
- 849
-
Base Profile Tail Effects on the Low Temperature Operation of Silicon Bipolar TransistorsDegors, N. / Chantre, A. / Nouailhat, A. et al. | 1992
- 853
-
Electron Heating and Quantum Transport in Deep Submicrometer n-MOSFET at Low Temperature and High Magnetic FieldMieville, J. P. / Ouisse, T. / Cristoloveanu, S. et al. | 1992
- 857
-
Low Temperature Behaviour of Submicron Accumulation Mode p-Channel SOI MOSFETsRotondaro, A. L. P. / Magnusson, U. / Simoen, E. et al. | 1992
- 861
-
Cryogenic Behaviour of Ultrashort Gate AlGaAs/GaAs and Pseudomorphic AlGaAs/InGaAs/GaAs HEMTsCrozat, P. / Bouchon, D. / De Lustrac, A. et al. | 1992
- 865
-
Experimental Determination of Selfheating in Silicon Resistors Operated at Cryogenic TemperaturesGutierrez-D., E. A. / Deferm, L. / Decoutere, S. et al. | 1992
- 871
-
New Developments in Quantum HeterostructuresWeisbuch, C. et al. | 1992
- 879
-
Improved Triple Resonant Tunneling Diodes using In~xGa~1~-~xAs/GaAs/AlAs Strained LayersLippens, D. / Nagle, J. / Grimbert, B. et al. | 1992
- 883
-
Sequential Analysis of Resonant Tunneling DiodesGenoe, J. / Van Hoof, C. / Borghs, G. et al. | 1992
- 887
-
Generation of Four Negative Differential Resistance Regions Using Two Resonant Tunneling DiodesFobelets, K. / Genoe, J. / Vounckx, R. et al. | 1992
- 891
-
Interface Properties of Strained InGaAs/InP Quantum Wells Grown by LP-MOVPESchwedler, R. / Gallman, B. / Wolter, K. et al. | 1992
- 895
-
Electro-optic Characterization of InGaAs/InP MQW p-i-n Modulator StructuresSchwedler, R. / Mikkelsen, H. / Kersting, R. et al. | 1992
- 899
-
Self-consistent Modelling of Charge Storage Effects in Resonant Tunnel DiodesRedhammer, R. / Allsopp, D. W. E. et al. | 1992
- 903
-
High-speed Integrated Quantum Well Self-electrooptic Effect DeviceTolstikhin, V. I. et al. | 1992
- 909
-
Quantum electron and Optoelectronic DevicesCapasso, F. et al. | 1992
- 917
-
Two-dimensional MOSFET Simulation by means of a Multi-dimensional Spherical Harmonics Expansion of the Boltzmann Transport EquationGnudi, A. / Ventura, D. / Baccarani, G. et al. | 1992
- 925
-
Author index| 1992
- ii
-
Editorial Board| 1992
- ix
-
Committees| 1992
- xiii
-
Sponsors| 1992
- xv
-
Contents| 1992
-
Proceedings of the 22nd European Solid State Device Research Conference Leuven, 14-17 September 1992Maes, H.E. et al. | 1993