IEEE transactions on electron devices
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 2841
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Changes in the Editorial BoardFay, Patrick et al. | 2024
- 2844
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Analysis of Nanosheet Field-Effect Transistor With Local Bottom IsolationYou, Jiwon / Kim, Hyunwoo / Kwon, Daewoong et al. | 2024
- 2849
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TCAD Simulations of Reconfigurable Field-Effect Transistor With Embedded-Fin-Contact to Improve On-CurrentWang, Chao / Hu, Junfeng / Liu, Ziyu et al. | 2024
- 2856
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Comprehensive Analysis of Sheet Thickness Scaling on the Performance of Nanosheet nFETsKaur, Ramandeep / Mohapatra, Nihar R. et al. | 2024
- 2863
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Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around TransistorsChang, Wen-Teng / Yang, Chia-Chang / Ho, Yueh-Ting et al. | 2024
- 2869
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An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection TechniqueChen, Jing / Guo, Bin / Li, Huiyuan et al. | 2024
- 2876
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The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂Zhang, Fan / Zhang, Zhaohao / Yao, Jiaxin et al. | 2024
- 2881
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MOBO-Driven Advanced Sub-3-nm Device Optimization for Enhanced PDP PerformanceJeong, HyunJoon / Choi, JinYoung / Cho, HyungMin et al. | 2024
- 2888
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Reverse Recovery Enhanced and Single-Event Effects Hardened Power Schottky Source MOSFET With Integrated Retrograde p-Well Schottky Contact Super Barrier RectifierYu, Qisheng / Chen, Wensuo / Zhang, Aohang et al. | 2024
- 2894
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Parasitic Capacitance in Nanosheet FETs: Extraction of Different Components and Their Analytical ModelingSingh, Aishwarya / Maheshwari, Om / Mohapatra, Nihar R. et al. | 2024
- 2901
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Study on Enhancing Electrostatic Discharge Stress Robustness of Flexible Thin-Film Transistors via Interface ModificationShen, Yuxuan / Yan, Yan / Zhang, Meng et al. | 2024
- 2907
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Strain Evolution in SiGe Nanosheet Transistor Process FlowChou, Hung-Chun / Chou, Tao / Chueh, Shee-Jier et al. | 2024
- 2914
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Dynamic RON Degradation in AlGaN/GaNMIS-HEMTs With Si3N4 or Si3N4/ZrO2Passivation LayerLiang, Ye / Zhang, Yuanlei / He, Xiuyuan et al. | 2024
- 2920
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High On/Off Current Ratio and High Vth/Ron Stability GaN MIS-HEMTs With GaN/AlN Superlattices BarrierLi, Shanjie / Zeng, Fanyi / Xing, Zhiheng et al. | 2024
- 2925
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GaN Schottky Barrier Diode (SBD) Modeling and Parameter Extraction for Multicathode ApplicationZhang, Ao / Hao, Xiaolin / Gao, Jianjun et al. | 2024
- 2931
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Analysis of Effects of Defects on Degradation Mechanism of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes Induced by High-Reserve Bias StressLi, Jinlan / Ding, Tao / Zhou, Liming et al. | 2024
- 2936
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Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection LayerAndo, Yuji / Oishi, Kensuke / Takahashi, Hidemasa et al. | 2024
- 2943
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Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of MeritLiu, Xiaoyi / Chen, Jingxiong / Jiang, Yuanxi et al. | 2024
- 2950
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Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFETNirala, Rohit Kumar / Semwal, Sandeep / Gupta, Manish et al. | 2024
- 2957
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Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing ApplicationsMeihar, Paritosh / Srinu, Rowtu / Lashkare, Sandip et al. | 2024
- 2963
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Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep LearningManna, Bibhas / Saha, Arnob / Jiang, Zhouhang et al. | 2024
- 2970
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Noise Robust Reservoir Computing Based on Flexible Doped Hafnium Oxide MemcapacitorsXing, Qianye / Pei, Mengjiao / Qiao, Lesheng et al. | 2024
- 2976
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Passing Word Line-Induced Subthreshold Leakage Reduction Using a Partial Insulator in a Buried Channel Array TransistorKim, Suyeon / Kim, Dong Young / Park, Je Won et al. | 2024
- 2983
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Comprehensive Investigation of Shelf Life and Performance of Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 BilayerSaini, Shalu / Lodhi, Anil / Dwivedi, Anurag et al. | 2024
- 2990
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High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset RegionYang, Guangan / Song, Weijia / Yu, Zuoxu et al. | 2024
- 2995
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Hydrogen-Related Instability of IGZO Field-Effect TransistorsLiu, Gan / Kong, Qiwen / Zhang, Dong et al. | 2024
- 3002
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The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process OptimizationLin, Zhiyu / Kang, Lu / Zhao, Jinxiu et al. | 2024
- 3009
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Ultrafast (50 ns) ID–VG Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate InsulatorJung, Taeseung / Nam, Sooji / Jeon, Sanghun et al. | 2024
- 3015
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Improved Environmental Stability of InSnO Thin-Film Transistor by Interface EngineeringZhang, Xinnan / Xu, Lei / Liang, Ruyu et al. | 2024
- 3020
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Dual-Gate Operation and Configurable Logic From Solution Pattern-Based Zinc Tin Oxide Thin-Film TransistorsSeo, Juhyung / Kim, Chang-Hyun / Yoo, Hocheon et al. | 2024
- 3026
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Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of ChannelLuo, Binbin / Wu, Xiaohan / Meng, Wei et al. | 2024
- 3032
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Rational Design of Different Ga Content Bilayer InGaZnO Thin-Film Transistors With Al₂O₃/HfO₂ Passivation LayerNurmamat, Patigul / Abliz, Ablat et al. | 2024
- 3039
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Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon DetectionBlain, Tarick / Shulyak, Vladimir / Han, Im Sik et al. | 2024
- 3045
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High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO₂/β-Ga₂O₃ p-n HeterojunctionLin, Jialong / Hong, Zifan / Long, Mingtao et al. | 2024
- 3050
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RTS Noise Reduction in CMOS Image Sensors Using Correlated Extrema CancellationBhattacharya, Abhinav / Tanya, Tusha / Sarkar, Mukul et al. | 2024
- 3056
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UV Photonic Integrated Chip Based on Epitaxial III-N on Si for Short-Range On-Chip Data TransmissionYan, Jiabin / Sun, Zhihang / Fang, Li et al. | 2024
- 3062
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Edge Breakdown Suppression in Avalanche Photodiodes Using an Attached Step Guard RingChen, Chi-En / Prechatavanich, Natchanon / Liu, Te-Hua et al. | 2024
- 3069
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High Wall-Plug Efficiency AlGaN Deep Ultraviolet Micro-LEDs Enabled by an Etched Reflective Array Design for High Data TransmissionYang, Yiming / Hou, Yuqi / Wu, Feng et al. | 2024
- 3077
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Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier LayerQi, Ying / Tian, Wentao / Liu, Mengran et al. | 2024
- 3084
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Hydrothermally Synthesized WS₂-QDs/Si (0-D/3-D) Vertical Heterojunction for an Efficient Wide Spectral (UV–Vis–NIR) PhotodetectionGoswami, Yashwant Puri / Gupta, Prashant Kumar / Pandey, Amritanshu et al. | 2024
- 3090
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Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light CommunicationZhu, Zihe / Wang, Wenliang / Liu, Peixin et al. | 2024
- 3096
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Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase EpitaxyTanaka, Daiki / Iso, Kenji / Makisako, Ryutaro et al. | 2024
- 3102
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Investigation of Prepulse of SiC Drift Step Recovery Diode in Fast Interruption ProcessYan, Xiaoxue / Liang, Lin / Yang, Zewei et al. | 2024
- 3109
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Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region DesignSun, Botao / Lei, Guangyin / Zhang, Jon et al. | 2024
- 3116
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An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and ImplementationMohammed Cherif, O. / Nadji, B. / Tadjer, S. A. et al. | 2024
- 3123
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Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device ArchitectureLeurquin, C. / Vandendaele, W. / Jaud, M.-A. et al. | 2024
- 3130
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Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf₀.₅Zr₀.₅O₂Han, Changhyeon / Kwon, Ki Ryun / Yim, Jiyong et al. | 2024
- 3135
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Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold SlopeRaju, Parameswari / Xu, Herwen / Zhu, Hao et al. | 2024
- 3142
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A Consistent Model for Gradual, Abrupt, and Abnormal Reset Phenomena in Bipolar/Unipolar Metal Oxide RRAMsJia, Yueyang / Shen, Sheng / Xie, Maosong et al. | 2024
- 3150
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Analytical Release Voltage Model of Monolithic 3-D Integrated Nanoelectromechanical Memory SwitchesLee, Jin Wook / Park, Geun Tae / Choi, Woo Young et al. | 2024
- 3156
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Study of Ethanol Gas Sensing Characteristics of An Al-Doped SnO₂ Thin Film Decorated With Gold NanoparticlesChiu, Chao-Chun / Zhu, Bo-Xun / Kuo, Chi-Kang et al. | 2024
- 3162
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A Sc0.096Al0.904N-Based Bimorph Piezoelectric MEMS Microphone Using 3 × 3 Circular DiaphragmsHu, Bohao / Liu, Wenjuan / Liu, Yan et al. | 2024
- 3169
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High-Performance 3-D Silicon-Embedded Coupled Solenoid Inductors With Inserted Magnetic CorePan, Pichao / Chen, Changnan / Gu, Jiebin et al. | 2024
- 3175
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect SensorShetty, Satish / Eisner, Savannah R. / Hassan, Ayesha et al. | 2024
- 3183
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Enhancing Long-Pulse Operation of Ku-Band TTO Microwave Source for GW-Level ApplicationsXu, Weili / Ling, Junpu / Song, Lili et al. | 2024
- 3189
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A Sheet Beam Electron Gun Based on Carbon Nanotube Cold CathodeRen, Junbo / Zhang, Yu / Jiang, Jun et al. | 2024
- 3194
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Design and Simulation Investigations of an X-Band Klystron-Like Relativistic Backward Wave Oscillator With Dual Modulation CavitiesVerma, Pratibha / Thottappan, M. et al. | 2024
- 3201
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A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil BeamGuo, Zugen / Lan, Feng / Lai, Han et al. | 2024
- 3209
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Threshold Prediction of Spurious Oscillations in Klystrons Due to Backstreaming Electrons From CollectorSu, Z. X. / Cai, J. C. / Yin, P. C. et al. | 2024
- 3216
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A Vacuum Transistor Based on Electron Emission From SiOₓ Tunneling DiodesHe, Yidan / Zang, Hanyang / Yao, Jun et al. | 2024
- 3221
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Design and High-Frequency Characterization of a Wafer-Scale Vertical Bridge Structure Nanoscale Vacuum Electronic DeviceHuang, Ruihan / Chen, Feiliang / Yang, Junxiang et al. | 2024
- 3228
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Demonstration of a Low-Voltage High-Efficiency Continuous-Wave Millimeter-Wave GyrotronLu, Dun / Fu, Wenjie / Glyavin, Mikhail et al. | 2024
- 3232
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Broadening Bandwidth of Extended Interaction Klystron Through Nonperiodic PerturbationsGuo, Naining / Qu, Zhaowei / Xue, Qianzhong et al. | 2024
- 3240
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Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental StudyPorzani, M. / Ricci, S. / Farronato, M. et al. | 2024
- 3246
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Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based ModelingPorzani, M. / Carletti, F. / Ricci, S. et al. | 2024
- 3252
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CuTi as Potential Liner- and Barrier-Free Interconnect ConductorZhang, Minghua / Gall, Daniel et al. | 2024
- 3258
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Electrospinning-Driven Dual-Channel-Based Field-Effect Transistors by Heterojunction ArchitectureHu, Qingqing / He, Gang / He, Bo et al. | 2024
- 3265
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Modeling the Impacts of Material Properties on Oscillatory Neuron BehaviorSchneble, Olivia D. / Zimmerman, Jeramy D. / Tellekamp, M. Brooks et al. | 2024
- 3271
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Honeycomb-Inspired Interconnects for Large-Area Flexible Circuits: Simulation and ModelingBhattacharjee, Ananya / Baruah, Ratul K. et al. | 2024
- 3279
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Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral VoltagesYang, An / Jiang, Yanfeng et al. | 2024
- 3285
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Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium OxideJhang, Wun-Ciang / Hsieh, Tsung-Chun / Zhang, Xuan-Zhi et al. | 2024
- 3293
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Energy-Efficient Brain Floating Point Convolutional Neural Network Using MemristorsTong, Shao-Qin / Bao, Han / Li, Jian-Cong et al. | 2024
- 3301
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Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport SimulationsLizzit, Daniel / Pala, Marco / Driussi, Francesco et al. | 2024
- 3307
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A Novel Physics Aware ANN-Based Framework for BSIM-CMG Model Parameter ExtractionSinghal, Anant / Pahwa, Girish / Agarwal, Harshit et al. | 2024
- 3315
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Implementing Remote Doping and Suppressed Scattering in MoS₂ Field-Effect Transistor Using CMOS-Compatible ProcessMa, Weiming / Zhang, Tianjiao / Hu, Jiayang et al. | 2024
- 3322
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Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing SystemZhang, Shuaidi / Sun, Xiaofan / Tang, Weiye et al. | 2024
- 3329
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Design Guidelines for Oxide Semiconductor Gain Cell Memory on a Logic PlatformLiu, Shuhan / Jana, Koustav / Toprasertpong, Kasidit et al. | 2024
- 3336
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Monolithic 3-D Integration of Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM and Analog RRAM-Based Computing-In-MemorySu, Yanbo / Shi, Mingcheng / Tang, Jianshi et al. | 2024
- 3343
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Fully Integrated 3-D Stackable CNTFET/RRAM 1T1R Array as BEOL Buffer Macro for Monolithic 3-D Integration With Analog RRAM-Based Computing-in-MemoryZhang, Yibei / Li, Yijun / Tang, Jianshi et al. | 2024
- 3351
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Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch DeviceLee, Jangseop / Seo, Yoori / Ban, Sanghyun et al. | 2024
- 3358
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Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAMFu, Zhiyuan / Cao, Shengjie / Zheng, Hao et al. | 2024
- 3365
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Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical ModelingCho, Chen-Yi / Chao, Tzu-Yi / Lin, Tzu-Yao et al. | 2024
- 3371
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Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%), and Self-Tracking Circuit DesignWu, Cheng-Hung / Liu, Jay / Zheng, Xun-Ting et al. | 2024
- 3377
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New Insights Into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET TechnologyRen, Pengpeng / Wu, Junjie / Zhang, Chenyang et al. | 2024
- 3383
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Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual ChannelsHsieh, Wan-Hsuan / Tu, Chien-Te / Chen, Yu-Rui et al. | 2024
- 3390
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Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 KJeong, Jaeyong / Kim, Jongmin / Lee, Jisung et al. | 2024
- 3396
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Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization DopingKumabe, Takeru / Yoshikawa, Akira / Kawasaki, Seiya et al. | 2024
- 3403
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Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In2O3 Thin-Film TransistorsNiu, Chang / Lin, Zehao / Askarpour, Vahid et al. | 2024
- 3411
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Strain-Induced Performance Variation in Stretchable Carbon-Nanotube Thin-Film Transistors and the Solution Through a Circular Channel DesignWu, Can / Zhong, Donglai / Wang, Weichen et al. | 2024
- 3417
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Monolithic Integration of 80-GHz Ge Photodetectors and 100-GHz Ge Electro-Absorption Modulators in a Photonic BiCMOS TechnologySteckler, Daniel / Lischke, Stefan / Peczek, Anna et al. | 2024
- 3424
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Latchup Risk in a 4H-SiC ProcessKe, Chao-Yang / Ker, Ming-Dou et al. | 2024
- 3429
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Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFETKuk, Song-Hyeon / Choi, Seongjun / Kim, Hyeong Yun et al. | 2024
- 3433
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Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaNChen, Yi-Fan / Wang, Chen-Hsin / Shih, Hung-Yuan et al. | 2024
- 3439
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Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability| 2024
- 3440
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TechRxiv: Share Your Preprint Research with the World!| 2024
- C1
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Table of Contents| 2024
- C2
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IEEE ELECTRON DEVICES SOCIETY| 2024
- C3
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IEEE Transactions on Electron Devices Information for Authors| 2024