Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 877
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Review Article - Nanofabrication by scanning probe microscope lithography: A reviewTseng, Ampere A. et al. | 2005
- 895
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Effect of thermal annealing on 120-nm-T-shaped-Ti-Pt-Au-gate AlGaN-GaN high electron mobility transistorsYamashita, Yoshimi et al. | 2005
- 900
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Etching silicon-containing bilayer resists in ammonia-based plasmasPanda, Siddhartha et al. | 2005
- 908
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Thin-film transformations and volatile products in the formation of nanoporous low-k polymethylsilsesquioxane-based dielectricLazzeri, P. et al. | 2005
- 918
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Imaging patterns of intensity in topographically directed photolithographyPaul, Kateri E. et al. | 2005
- 926
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Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayerPark, D.S. et al. | 2005
- 930
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Nitrogen-incorporated multiwalled carbon nanotubes grown by direct current plasma-enhanced chemical vapor depositionYang, Ji Hoon et al. | 2005
- 934
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Fabrication of two- and three-dimensional photonic crystals of titania with submicrometer resolution by deep x-ray lithographyAwazu, Koichi et al. | 2005
- 940
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Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffractionToh, Suey Li et al. | 2005
- 947
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Direct deposition of aligned nanorod array onto cylindrical objectsFan, J.-G. et al. | 2005
- 954
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Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructuresNee, Tzer-En et al. | 2005
- 959
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Ion beam sputter deposition of soft x-ray Mo-Si multilayer mirrorsSchubert, E. et al. | 2005
- 966
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Cross sections for the investigation of the electroluminescence excitation of InGaN-GaN quantum wells in blue light-emitting diodes with multiquantum barriersNee, Tzer-En et al. | 2005
- 970
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Millisecond microwave annealing: Driving microelectronics nanoThompson, Keith et al. | 2005
- 979
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Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer depositionFuruya, Akira et al. | 2005
- 984
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Fabrication and characterization of slanted nanopillars arrayFu, Yongqi et al. | 2005
- 990
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Enhancement of He-induced cavities in silicon by hydrogen plasma treatmentLiu, C.L. et al. | 2005
- 995
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Micro-nanotribological study of perfluorosilane SAMs for antistiction and low wearKasai, Toshi et al. | 2005
- 1004
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Photoreflectance characterization of InP-GaAsSb double-heterojunction bipolar transistor epitaxial wafersSugiyama, Hiroki et al. | 2005
- 1010
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High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layerBalakrishnan, G. et al. | 2005
- 1013
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Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layerLee, Jeong-Soo et al. | 2005
- 1018
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Chemisorption of C60 on the Si(001)-2 X 1 surface at room temperatureCheng, C.-P. et al. | 2005
- 1024
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Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser depositionKao, C.J. et al. | 2005
- 1029
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Effect of cerium concentration on the structural and ferroelectric properties of Bi4-xCexTi3O12 thin films for ferroelectric random access memoriesOh, Young-Nam et al. | 2005
- 1032
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Integrated field effect transistors for microelectromechanical systems applications, modeling, and resultsYoung, Ralph W. et al. | 2005
- 1036
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Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W-WNx-poly-Si gate MOSFET for high density DRAM applicationsLim, Kwan-Yong et al. | 2005
- 1041
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Nanostructured carbon-metal composite filmsNarayan, Roger J. et al. | 2005
- 1047
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Growth and characterization of Si-doped self-assembled InAs quantum dotsNah, Jongbum et al. | 2005
- 1050
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Implementing multiple band gaps using inductively coupled argon plasma enhanced quantum well intermixingNie, D. et al. | 2005
- 1054
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Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxyWicaksono, S. et al. | 2005
- 1060
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Self-terminated oxide polish technique for the waveguide ridge laser diode fabricationPeng, Te-Chin et al. | 2005
- 1064
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Improved high temperature growth of GaInNAsSb by molecular beam epitaxyMaranowski, K.D. et al. | 2005
- 1068
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Lateral templating of self-organized ripple morphologies during focused ion beam milling of GeIchim, Stefan et al. | 2005
- 1072
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Low resistance ohmic contact to p-type GaN using Pd-Ir-Au multilayer schemeBae, J.W. et al. | 2005
- 1076
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Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor depositionTakagi, S. et al. | 2005
- 1084
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Electron emission from boron nitride films deposited on patterned GaAs substratesShima, Hidekazu et al. | 2005
- 1088
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Technology of polycrystalline diamond thin films for microsystems applicationsTang, Yuxing et al. | 2005
- 1096
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Effect of a surface inhibition layer on line edge roughnessMa, Yuansheng et al. | 2005
- 1102
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Brief Reports and Comments - Effect of imprinting pressure -on residual layer thickness in ultraviolet nanoimprint lithographyLee, Heon et al. | 2005
- 1107
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Shop Notes - Technique for site-specific plan-view transmission electron microscopy of nanostructural electronic devicesBassim, N.D. et al. | 2005
- 1118
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Preface| 2005
- 1119
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Molecular beam epitaxy growth and characterization of mid-IR type-II "W" diode lasersCanedy, C.L. et al. | 2005
- 1125
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Growth of high optical quality InAs quantum dots in InAlGaAs-InP double heterostructuresZhang, Z.H. et al. | 2005
- 1129
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - High-performance 30-period quantum-dot infrared photodetectorChou, Shu-Ting et al. | 2005
- 1132
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Uniformly doped InAs-GaAs quantum-dot infrared photodetector structuresPal, D. et al. | 2005
- 1136
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - IR Devices - Midinfrared InAs-InGaSb "W" diode lasers with digitally grown tensile-strained AlGaAsSb barriersLi, W. et al. | 2005
- 1140
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Regrown-emitter InP heterojunction bisucpolar transistorsKadow, C. et al. | 2005
- 1144
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Molecular beam epitaxy growth of high quantum efficiency InAs-GaSb superlattice detectorsSullivan, G.J. et al. | 2005
- 1149
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Optical properties of (GaSb)3n(AlSb)n (1<=n<=5) superlatticesChoi, S.G. et al. | 2005
- 1154
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As-In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxyKatoh, S. et al. | 2005
- 1158
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Much improved flat interfaces of InGaAs-AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxyImura, M. et al. | 2005
- 1162
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Phosphides, Arsenides and Antimonides - Molecular beam epitaxial growth of AlGaAs-InGaAs-GaAs planar superlattice structures on vicinal (111)B GaAs and their transport propertiesAkiyama, Y. et al. | 2005
- 1166
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Mismatched Epitaxy - Enhanced strain relaxation rate of InGaAs by adatom-assisted dislocation kink nucleationLynch, C. et al. | 2005
- 1171
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Mismatched Epitaxy - Effect of micro-twin defects on InSb quantum wellsMishima, T.D. et al. | 2005
- 1174
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Recent developments in surface studies of GaN and AlNFeenstra, R.M. et al. | 2005
- 1181
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Impact of unintentional and intentional nitridation of the 6H-SiC(0001)Si substrate on GaN epitaxyKim, Tong-Ho et al. | 2005
- 1186
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitridesWicks, G.W. et al. | 2005
- 1190
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN-GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substratesStorm, D.F. et al. | 2005
- 1194
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Influence of AlN nucleation layer on the epitaxy of GaN-AlGaN high electron mobility transistor structure and wafer curvatureTorabi, A. et al. | 2005
- 1199
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistorsHaffouz, S. et al. | 2005
- 1204
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Nitride Growth - Molecular beam epitaxy of InAlN-GaN heterostructures for high electron mobility transistorsKatzer, D.S. et al. | 2005
- 1209
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - UV-Visible Optoelectronics - Optical characterization and evaluation of the conduction band offset for ZnCdSe-ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxySohel, Mohammad et al. | 2005
- 1212
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Effect of beryllium concentration on the size of self-assembled CdSe quantum dots grown on Zn1-xBexSe by molecular-beam epitaxyZhou, X. et al. | 2005
- 1217
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Self-assembled quantum-dot molecules by molecular-beam epitaxySuraprapapich, S. et al. | 2005
- 1221
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAsYakimov, Michael et al. | 2005
- 1226
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - GaAs buffer layer morphology and lateral distributions of InGaAs quantum dotsRoshko, A. et al. | 2005
- 1232
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Site-controlled InAs quantum dots on GaAs patterned using self-organized nano-channel alumina templateMeneou, K. et al. | 2005
- 1236
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible and white light emittersPerez-Paz, M.Noemi et al. | 2005
- 1240
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - Molecular beam epitaxy growth of novel double-layer InAs quantum dot structures and their optical propertiesOhmori, M. et al. | 2005
- 1243
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Quantum Dots - 1.3 mm InAs quantum dots grown with an As2 source using molecular-beam epitaxySugaya, Takeyoshi et al. | 2005
- 1247
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Growth related interference effects in band edge thermometry of semiconductorsSacks, R.N. et al. | 2005
- 1252
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Specular reflectance spectroscopy for substrate temperature determination in radio frequency-plasma molecular beam epitaxy of nitride semiconductorsKatzer, D.S. et al. | 2005
- 1257
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Inert gas maintenance for molecular-beam epitaxy systemsOye, Michael M. et al. | 2005
- 1262
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growthFastenau, J.M. et al. | 2005
- 1267
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Molecular Beam Epitaxy Techniques - Storage conditions for high-accuracy composition standards of AlGaAsBertness, K.A. et al. | 2005
- 1272
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there?Doolittle, W.Alan et al. | 2005
- 1277
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Electronic properties of ZnO epilayers grown on c-plane sapphire by plasma-assisted molecular beam epitaxyMurphy, T.E. et al. | 2005
- 1281
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxyOh, D.C. et al. | 2005
- 1286
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Selective growth of Zn- and 0-polar ZnO layers by plasma-assisted molecular beam epitaxyMinegishi, Tsutomu et al. | 2005
- 1291
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Oxides - Depth profiling the electronic structures at HfO2-Si interface grown by molecular beam epitaxyLay, T.S. et al. | 2005
- 1294
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Mn doping and p-type conductivity in zinc-blende GaMnN layers grown by molecular beam epitaxyNovikov, S.V. et al. | 2005
- 1299
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Molecular beam epitaxial growth of Fe(Si1-xGex)2 epilayersCottier, R.J. et al. | 2005
- 1304
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Molecular-beam epitaxial growth and characterization of (In0.5Al0.5)1-xMnxAs-(In0.5 Ga0.5)1-xMnxAs: Thin films and superiatticesMaksimov, O. et al. | 2005
- 1308
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Structure and magnetic properties of Cr-doped GaNKim, J.J. et al. | 2005
- 1313
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Magnetic Materials - Dielectric functions of molecular-beam-epitaxy-grown Ga1-xMnxAs thin filmsWeber, Z.J. et al. | 2005
- 1317
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Gas-source molecular-beam epitaxial growth of Ga(in)NP on GaP(100) substrates for yellow-amber light-emitting devicesOdnoblyudov, V.A. et al. | 2005
- 1320
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAsBank, S.R. et al. | 2005
- 1324
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Protecting wafer surface during plasma ignition using an arsenic capWistey, M.A. et al. | 2005
- 1328
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GainNAs grown by molecular beam epitaxyYuen, Homan B. et al. | 2005
- 1333
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III-V dilute nitridesFotkatzikis, A. et al. | 2005
- 1337
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 mmBank, Seth R. et al. | 2005
- 1341
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Papers from the 22nd North American Conference on Molecular Beam Epitaxy - Dilute Nitrides - GaNAs(001) surface phases under growing conditionMori, Takahiro et al. | 2005
- 1345
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AUTHOR INDEX| 2005
- 1346
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CUMULATIVE AUTHOR INDEX| 2005