Microelectronic engineering
Die Inhaltsverzeichnisse werden automatisch erzeugt und basieren auf den im Index des TIB-Portals verfügbaren Einzelnachweisen der enthaltenen Beiträge. Die Anzeige der Inhaltsverzeichnisse kann daher unvollständig oder lückenhaft sein.
Inhaltsverzeichnis
- 1937
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Proceedings of the Twelfth European Workshop on Materials for Advanced Metallization 2008Schulz, Stefan E. / Körner, Heinrich / Zschech, Ehrenfried et al. | 2008
- 1940
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Integration of high-performance RF passive modules (MIM capacitors and inductors) in advanced BEOLFarcy, A. / Carpentier, J.-F. / Thomas, M. et al. | 2008
- 1947
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Barrier and seed layer coverage in 3D structures with different aspect ratios using sputtering and ALD processesLühn, O. / Van Hoof, C. / Ruythooren, W. et al. | 2008
- 1952
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High aspect ratio copper through-silicon-vias for 3D integrationSong, Chongshen / Wang, Zheyao / Chen, Qianwen et al. | 2008
- 1957
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High aspect ratio via metallization for 3D integration using CVD TiN barrier and electrografted Cu seedDruais, G. / Dilliway, G. / Fischer, P. et al. | 2008
- 1962
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Impact of dummy metal filling strategy dedicated to inductors integrated in advanced thick copper RF BEOLPastore, C. / Gianesello, F. / Gloria, D. et al. | 2008
- 1967
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Mechanical reliability evaluation of Sn-37Pb solder joint using high speed lap-shear testJeon, Seong-jae / Hyun, Seungmin / Lee, Hak-Joo et al. | 2008
- 1971
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Toward the integration of a single carbon nanofibre as via interconnectCoiffic, J.C. / Poche, H. Le / Mariolle, D. et al. | 2008
- 1975
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Self-assembled metallic nanocrystal structures for advanced non-volatile memory applicationsHofmann, Ralf / Krishna, Nety et al. | 2008
- 1979
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Controlling the formation of nanoparticles for definite growth of carbon nanotubes for interconnect applicationsHermann, Sascha / Ecke, Ramona / Schulz, Stefan et al. | 2008
- 1984
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Fabrication of CNTs/Cu composite thin films for interconnects applicationLiu, Ping / Xu, Dong / Li, Zijiong et al. | 2008
- 1988
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Characterization of copper grain growth limitations inside narrow wires depending of overburden thicknessDubreuil, O. / Cordeau, M. / Mourier, Th. et al. | 2008
- 1992
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Electronic transport properties in copper nanowireMohammadzadeh, Saeideh / Pouladsaz, Davoud / Streiter, Reinhard et al. | 2008
- 1995
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Atom probe tomography of Ni silicides: First stages of reaction and redistribution of PtMangelinck, D. / Hoummada, K. / Cojocaru-Mirédin, O. et al. | 2008
- 2000
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Improvement of thermal stability of Ni silicide on N+–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interfaceTsutsui, Kazuo / Shiozawa, Takashi / Nagahiro, Koji et al. | 2008
- 2005
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Nitrogen impurity effects on nickel silicide formation at low temperatures – New “nitrogen co-plasma” approachImbert, B. / Gregoire, M. / Zoll, S. et al. | 2008
- 2009
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A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrierZhao, C. / Ahn, J.Y. / Horiguchi, N. et al. | 2008
- 2013
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Study of Ni/Si(100) solid-state reaction with Y additionHuang, Yi-Fei / Jiang, Yu-Long / Ru, Guo-Ping et al. | 2008
- 2016
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Sputtering of Ni/Ti/SiC ohmic contactsMachac, Petr / Barda, Bohumil / Hubickova, Marie et al. | 2008
- 2019
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Gentle FUSI NiSi metal gate process for high-k dielectric screeningGottlob, H.D.B. / Lemme, M.C. / Schmidt, M. et al. | 2008
- 2022
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Ti and Ti/Sb ohmic contacts on n-type 6H–SiCBarda, Bohumil / Macháč, Petr / Hubičková, Marie et al. | 2008
- 2025
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The integration of alternative contact cleaning techniques for future DRAM technology nodesStavrev, Momtchil / Fitz, Clemens / Thuemmel, Ines et al. | 2008
- 2028
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Cu contact on NiSi substrate with a Ta/TaN barrier stackZhou, Mi / Zhao, Ying / Huang, Wei et al. | 2008
- 2032
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Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectricWang, Bao-Min / Ru, Guo-Ping / Jiang, Yu-Long et al. | 2008
- 2037
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Interface optimization for poly silicon/tungsten gatesSchmidbauer, Sven / Hahn, Jens / Buerke, Axel et al. | 2008
- 2042
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Extensive investigations of temperature influence on barrier integrity during reliability testingAubel, O. / Meyer, M.A. / Feustel, F. et al. | 2008
- 2047
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Screening self-assembled monolayers as Cu diffusion barriersMaestre Caro, A. / Maes, G. / Borghs, G. et al. | 2008
- 2051
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Physical investigation of the impact of electrolessly deposited self-aligned caps on insulation of copper interconnectsOlivier, S. / Decorps, T. / Bernard, M. et al. | 2008
- 2055
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TEM investigation of Ti and Ti/Al bilayer as alternative diffusion barriers for Cu metallization for SAW device applicationsSpindler, M. / Menzel, S.B. / Eggs, C. et al. | 2008
- 2059
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Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasmaXie, Qi / Musschoot, Jan / Detavernier, Christophe et al. | 2008
- 2064
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Effect of wet chemical substrate pretreatment on the growth behavior of Ta(N) films deposited by thermal ALDStrehle, S. / Schumacher, H. / Schmidt, D. et al. | 2008
- 2068
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XPS studies of the ALD-growth of TaN diffusion barriers: Impact of the dielectric surface chemistry on the growth mechanismVolpi, F. / Cadix, L. / Berthomé, G. et al. | 2008
- 2071
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Air gap formation by UV-assisted decomposition of CVD materialPantouvaki, M. / Humbert, A. / VanBesien, E. et al. | 2008
- 2075
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Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localizationVilmay, M. / Roy, D. / Volpi, F. et al. | 2008
- 2079
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Cracking energy estimation of ultra low-k package using novel prediction approach combined with global–local modeling techniqueLee, Chang-Chun / Chou, Tsung-Lin / Chiu, Chien-Chia et al. | 2008
- 2085
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Phosphorous doped SOG as a pre-metal-dielectric for sub-50nm technology nodesDas, Arabinda / Stavrev, Momtchil / Prenz, Heike et al. | 2008
- 2089
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Study of solvent penetration inside a porous low k material by neutron reflectometry – Influence of material surface modifications and of solvent propertiesRébiscoul, D. / Broussous, L. / Puyrenier, W. et al. | 2008
- 2094
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Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengthsPrager, L. / Marsik, P. / Wennrich, L. et al. | 2008
- 2098
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Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyondChapelon, L.L. / Chaabouni, H. / Imbert, G. et al. | 2008
- 2102
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Porosity generation using hydrogen plasma assisted thermal curing for ultra low k materialZenasni, A. / Jousseaume, V. / Gourhant, O. et al. | 2008
- 2105
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Weight-scale, XRR and corona charge method on back-end dielectrics for 65 and 45nm technology nodesFossati, D. / Duru, R. / Desmercières, S. et al. | 2008
- 2107
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Evaluation of plasma damage in ultra-low-k materials with cap film using “extracted k-value” methodTakahashi, Hyoh / Takimoto, Yoshio / Masuda, Makoto et al. | 2008
- 2111
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Optical, electrical and structural properties of spin-on MSQ low-k dielectrics over a wide temperature rangeAhner, N. / Schulz, S.E. / Blaschta, F. et al. | 2008
- 2114
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Influence of NH3 plasma treatment on chemical bonding and water adsorption of low-k SiCOH filmGuo, Hao-Wen / Zhu, Lian / Zhang, Lei et al. | 2008
- 2118
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Structure analysis and property improvements of the computer-simulated fullerene-based ultralow-k dielectricsZagorodniy, K. / Hermann, H. / Taut, M. et al. | 2008
- 2123
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How to improve intrinsic and extrinsic reliability of vias by process optimizationPenka, Sabine / Schulte, Susanne / Czekalla, Markus et al. | 2008
- 2128
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Overview of dual damascene integration schemes in Cu BEOL integrationKriz, J. / Angelkort, C. / Czekalla, M. et al. | 2008
- 2133
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Cu grain growth in interconnects trenches – Experimental characterization of the overburden effectCarreau, V. / Maitrejean, S. / Brechet, Y. et al. | 2008
- 2137
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Impact of Al in Cu alloy interconnects on electro and stress migration reliabilitiesMaekawa, Kazuyoshi / Mori, Kenichi / Suzumura, Naohito et al. | 2008
- 2142
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Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiCKuchuk, A.V. / Guziewicz, M. / Ratajczak, R. et al. | 2008
- 2146
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Post electrochemical Cu deposition anneal impact on stress-voiding in individual viasGregoire, M. / Juhel, M. / Vannier, P. et al. | 2008
- 2150
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Analysis of Cu/Low-k structure under back end of line processChiu, C.C. / Lee, C.C. / Chou, T.L. et al. | 2008
- 2155
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Nanotwin formation and its physical properties and effect on reliability of copper interconnectsXu, Di / Sriram, Vinay / Ozolins, Vidvuds et al. | 2008
- 2159
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New precursors for CVD copper metallizationNorman, John A.T. / Perez, Melanie / Schulz, Stefan E. et al. | 2008
- 2164
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Oxygen chemiluminescence in He plasma as a method for plasma damage evaluationUrbanowicz, A.M. / Shamiryan, D. / Baklanov, M.R. et al. | 2008
- 2169
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Chemical bonds in damaged and pristine low-κ materials: A comparative EELS studyStegmann, Heiko / Özdöl, V. Burak / Koch, Christoph et al. | 2008
- 2169
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Chemical bonds in damaged and pristine low-k materials: A comparative EELS studyStegmann, H. / Ozdol, V. B. / Koch, C. et al. | 2008
- 2172
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Study of nano-mechanical properties for thin porous films through instrumented indentation: SiO2 low dielectric constant films as an exampleHerrmann, M. / Richter, F. / Schulz, S.E. et al. | 2008
- 2175
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Texture and strain in narrow copper damascene interconnect lines: An X-ray diffraction analysisKaouache, B. / Labat, S. / Thomas, O. et al. | 2008
- 2179
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Diffusional creep induced stress relaxation in thin Cu films on siliconChocyk, D. / Proszynski, A. / Gladyszewski, G. et al. | 2008
- 2183
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A compact wide band filter based on the left handed material theoryHuang, C. / Chen, D. / Wei, W.J. et al. | 2008
- 2187
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The possibility of polarization recovery in fatigued ferroelectric vinylidene fluoride and trifluoroethylene copolymer filmsZeng, ZhiGang / Zhu, GuoDong / Liu, Ran et al. | 2008
- IFC
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Inside Front Cover - Editorial Board| 2008
- v
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Table of Contents| 2008